BC639-16ZL1G.

Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 800 mW, TO-92, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:200MHz; Power Dissipation Pd:800mW; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transis
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 800mW
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 200MHz
Transistor Case Style: TO-92
DC Current Gain hFE Min: 100hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 1A
Collector Emitter Voltage Max: 80V

Delivery and price
Units per pack	6000
Price	0.048 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026