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BC559CTA
Bipolar (BJT) Single Transistor, PNP, 30 V, 100 mA, 500 mW, TO-92, Through Hole
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 500mW
- DC Current Gain hFE: 420hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- DC Collector Current: 100mA
- Power Dissipation Pd: 500mW
- Transition Frequency: 150MHz
- Transistor Case Style: TO-92
- DC Current Gain hFE Min: 420hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 30V
- Collector Emitter Voltage V(br)ceo: 30V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.076 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
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April 2014<br>**----- End of picture text -----**<br>
## **BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor**
## **Features**
- Switching and Amplifier
- High-Voltage: BC556, VCEO = -65 V
- Low-Noise: BC559, BC560
- Complement to BC546, BC547, BC548, BC549, and BC550
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**----- Start of picture text -----**<br>
1 TO-92<br>1. Collector 2. Base 3. Emitter<br>**----- End of picture text -----**<br>
## **Ordering Information**
~~LLee~~ **Part Number Marking Package Packing Method** ~~sO~~ BC556ABU BC556A TO-92 3L ~~GO~~ Bulk ~~eC~~ BC556ATA BC556A TO-92 3L ~~CO~~ Ammo ~~pf~~ BC556BTA BC556B TO-92 3L Ammo ~~GG~~ BC556BTF BC556B TO-92 3L Tape and Reel BC556BTFR BC556B TO-92 3L Tape and Reel ~~EEE EC se~~ BC557ATA BC557A ~~GC~~ TO-92 3L Ammo ~~GO~~ BC557BTA BC557B TO-92 3L ~~GO~~ Ammo ~~po~~ BC557BTF BC557B TO-92 3L Tape and Reel ~~hl~~ BC558BTA BC558B TO-92 3L Ammo ~~pf~~ BC559BTA BC559B TO-92 3L Ammo ~~>~~ BC559CTA BC559C ~~~~~ TO-92 3L ~~@QmQOny~~ Ammo ~~~~ | Oe.~~ BC560CTA BC560C ~~|~~ TO-92 3L ~~ay~~ Ammo ~~§= |~~
© 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
www.fairchildsemi.com
1
## **Absolute Maximum Ratings**
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
|**Electrical Characteristics**<br>Values are at TA= 25°C unless otherwise noted.<br>**Symbol**<br>**Parameter**<br>VCBO<br>Collector-Base Voltage<br>BC556<br>BC557 / BC560<br>BC558 / BC559<br>VCEO<br>Collector-Emitter Voltage<br>BC556<br>BC557 / BC560<br>BC558 / BC559<br>VEBO<br>Emitter-Base Voltage<br>IC<br>Collector Current (DC)<br>PC<br>Collector Power Dissipation<br>TJ<br>Junction Temperature<br>TSTG<br>Storage Temperature Range<br>**Symbol**<br>**Parameter**<br>**Conditions**<br>ICBO<br>Collector Cut-Off Current<br>VCB= -30 V, IE= 0<br>hFE<br>DC Current Gain<br>VCE= -5 V, IC= -2 mA<br>VCE(sat)<br>Collector-Emitter Saturation<br>Voltage<br>IC= -10 mA, IB= -0.5 mA<br>IC= -100 mA, IB= -5 mA<br>VBE(sat)<br>Collector-Base Saturation Voltage<br>IC= -10 mA, IB= -0.5 mA<br>IC= -100 mA, IB= -5 mA|**Electrical Characteristics**<br>Values are at TA= 25°C unless otherwise noted.<br>**Symbol**<br>**Parameter**<br>VCBO<br>Collector-Base Voltage<br>BC556<br>BC557 / BC560<br>BC558 / BC559<br>VCEO<br>Collector-Emitter Voltage<br>BC556<br>BC557 / BC560<br>BC558 / BC559<br>VEBO<br>Emitter-Base Voltage<br>IC<br>Collector Current (DC)<br>PC<br>Collector Power Dissipation<br>TJ<br>Junction Temperature<br>TSTG<br>Storage Temperature Range<br>**Symbol**<br>**Parameter**<br>**Conditions**<br>ICBO<br>Collector Cut-Off Current<br>VCB= -30 V, IE= 0<br>hFE<br>DC Current Gain<br>VCE= -5 V, IC= -2 mA<br>VCE(sat)<br>Collector-Emitter Saturation<br>Voltage<br>IC= -10 mA, IB= -0.5 mA<br>IC= -100 mA, IB= -5 mA<br>VBE(sat)<br>Collector-Base Saturation Voltage<br>IC= -10 mA, IB= -0.5 mA<br>IC= -100 mA, IB= -5 mA|**Electrical Characteristics**<br>Values are at TA= 25°C unless otherwise noted.<br>**Symbol**<br>**Parameter**<br>VCBO<br>Collector-Base Voltage<br>BC556<br>BC557 / BC560<br>BC558 / BC559<br>VCEO<br>Collector-Emitter Voltage<br>BC556<br>BC557 / BC560<br>BC558 / BC559<br>VEBO<br>Emitter-Base Voltage<br>IC<br>Collector Current (DC)<br>PC<br>Collector Power Dissipation<br>TJ<br>Junction Temperature<br>TSTG<br>Storage Temperature Range<br>**Symbol**<br>**Parameter**<br>**Conditions**<br>ICBO<br>Collector Cut-Off Current<br>VCB= -30 V, IE= 0<br>hFE<br>DC Current Gain<br>VCE= -5 V, IC= -2 mA<br>VCE(sat)<br>Collector-Emitter Saturation<br>Voltage<br>IC= -10 mA, IB= -0.5 mA<br>IC= -100 mA, IB= -5 mA<br>VBE(sat)<br>Collector-Base Saturation Voltage<br>IC= -10 mA, IB= -0.5 mA<br>IC= -100 mA, IB= -5 mA|**Min.**<br>110|**Value**<br>-80<br>-50<br>-30<br>-65<br>-45<br>-30<br>-5<br>-100<br>500<br>150<br>-65 to +150<br>**Typ.**<br>**Max.**<br>-15<br>800<br>-90<br>-300<br>-250<br>-650<br>-700<br>-900|**Value**<br>-80<br>-50<br>-30<br>-65<br>-45<br>-30<br>-5<br>-100<br>500<br>150<br>-65 to +150<br>**Typ.**<br>**Max.**<br>-15<br>800<br>-90<br>-300<br>-250<br>-650<br>-700<br>-900|**Value**<br>-80<br>-50<br>-30<br>-65<br>-45<br>-30<br>-5<br>-100<br>500<br>150<br>-65 to +150<br>**Typ.**<br>**Max.**<br>-15<br>800<br>-90<br>-300<br>-250<br>-650<br>-700<br>-900|**Unit**<br>V<br>V<br>V<br>mA<br>mW<br>°C<br>°C<br>**Unit**<br>nA<br>mV<br>mV|
|---|---|---|---|---|---|---|---|
|VBE(on)<br>Base-Emitter On Voltage|VCE= -5 V, I<br>VCE= -5 V, I|= -5 V, IC= -2 mA<br>= -5 V, IC= -10 mA|-600||-660|-750<br>-800|mV|
|fT<br>Current Gain Bandwidth Product|VCE= -5 V, IC= -10 mA,<br>f = 10 MHz||||150||MHz|
|Cob<br>Output Capacitance|VCB= -10 V, I|= -10 V, IE= 0, f = 1 MHz||||6|pF|
|BC556 / BC557 / BC558|VCE= -5 V, I|= -5 V, IC= -200μA,|||2|10||
|NF<br>Noise<br>Figure<br>BC559 / BC560<br>BC559|f = 1 kHz, RG= 2 kΩ<br>VCE= -5 V, IC= -200μA,||||1<br>1.2|4<br>4.0|dB|
|BC560|RG= 2 kΩ,f = 30 to 15000 MHz||||1.2|2.0||
## **Electrical Characteristics**
Values are at TA = 25°C unless otherwise noted.
## **hFE Classification**
|**hFE ClassificationFE ClassificationClassification**||||
|---|---|---|---|
|Classification|A|B|C|
|hFE|110 ~ 220|200 ~ 450|420 ~ 800|
© 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
www.fairchildsemi.com
2
## **Typical Performance Characteristics**
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**----- Start of picture text -----**<br>
-50 1000<br>-45 Pit TT I B = -400 μ A EaGane VCE = -5V<br>-40 Pore I B = -350 μ A OE<br>-35 Vee I B = -300 μ A 100<br>-30 | (— I B = -250 μ A aa<br>-25 Peer I B = -200 μ A<br>-20 I B = -150 μ A<br>10<br>-15-10 |faeea eae I B = -100 μ A<br>-5 IB = -50 μ A<br>-0 GaaaGGuGanPit -2 -4 PEP -6 -8 -10 TE -12 -14 -16 -18 -20 1-0.1 -1 -10 -100<br>VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT<br>Figure 1. Static Characteristic Figure 2. DC Current Gain<br>-10 -100<br>I C = -10 I B V CE = -5V<br>-1 VBE(sat) -10<br>Se<br>-0.1 -1<br>V CE (sat)<br>-0.01 -0.1<br>-0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2<br>IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE<br>Figure 3. Base-Emitter Saturation Voltage and Figure 4. Base-Emitter On Voltage<br>Collector-Emitter Saturation Voltage<br>1000<br>f=1MHz V CE = -5V<br>10 IE = 0<br>100<br>1 10<br>-1 -10 -100 -1 -10<br>VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT<br>Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product<br>, DC CURRENT GAIN<br>[mA], COLLECTOR CURRENTIC hFE<br>(sat)[V], SATURATION VOLTAGE<br>CE<br>[mA], COLLECTOR CURRENTIC<br>(sat), V<br>BE<br>V<br>(pF), CAPACITANCE<br>ob<br>C<br>[MHz], CURRENT GAIN-BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br>
© 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
www.fairchildsemi.com
3
## **Physical Dimensions**
## TO-92 (Bulk)
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D<br>**----- End of picture text -----**<br>
**Figure 7. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)**
_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor_ ~~_r_~~ _eprese_ ~~_n_~~ _tative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._
_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf ._
_For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf._
© 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
www.fairchildsemi.com
4
## **Physical Dimensions** (Continued)
## TO-92 (Ammo, Tape and Reel)
## **Figure 8. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)**
_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._
_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf ._
_For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf_ .
© 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
www.fairchildsemi.com
5
## **TRADEMARKS**
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
|AccuPower <br>AX-CAP®*<br>F-PFS <br>FRFET®<br>®<br>®*<br>™<br>™<br>S SYSTEM<br>GENERAL||
|---|---|
|BitSiC <br>Build it Now <br>Global Power Resource<br>SM<br>GreenBridge <br>PowerTrench®<br>PowerXS™<br>TinyBoost®<br>TinyBuck®<br>™™™||
|CorePLUS <br>CorePOWER <br>Green FPS <br>Green FPS e-Series <br>Programmable Active Droop <br>QFET®<br>TinyCalc <br>TinyLogic®<br>™<br>™<br>™<br>™<br>™<br>™<br>™||
|_CROSSVOLT_ <br>G_max_ <br>QS <br>TINYOPTO <br>™<br>™<br>™<br>™||
|CTL <br>GTO <br>Quiet Series <br>TinyPower <br>™<br>™<br>™<br>™||
|Current Transfer Logic <br>DEUXPEED®<br>DualCool™<br>EcoSPARK®<br>EfficientMax <br>ESBC <br>Fairchild®<br>Fairchild Semiconductor®<br>FACT Quiet Series <br>FACT®<br>FAST®<br>FastvCore <br>FETBench <br>FPS <br>IntelliMAX <br>ISOPLANAR <br>Making Small Speakers Sound Louder<br>and Better™<br>MegaBuck <br>MICROCOUPLER <br>MicroFET <br>MicroPak <br>MicroPak2 <br>MillerDrive <br>MotionMax <br>mWSaver®<br>OptoHiT <br>OPTOLOGIC®<br>OPTOPLANAR®<br>RapidConfigure <br>Saving our world, 1mW/W/kWat a time™<br>SignalWise <br>SmartMax <br>SMART START <br>Solutions for Your Success <br>SPM®<br>STEALTH <br>SuperFET®<br>SuperSOT<br>3<br>SuperSOT -6<br>SuperSOT -8<br>SupreMOS®<br>SyncFET <br>Sync-Lock™<br>TinyPWM <br>TinyWire <br>TranSiC <br>TriFault Detect <br>TRUECURRENT®*<br>SerDes <br>UHC®<br>Ultra FRFET <br>UniFET <br>VCX <br>VisualMax<br>VoltagePlus <br>XS™<br>™<br>®<br>™<br>™<br>™<br>™<br>™<br>™M<br>™<br>2)<br>™<br>™<br>™<br>™<br>™<br>™<br>™<br>™<br>ey<br>™<br>~~F~~<br>‘i<br>"<br>Z<br>™<br>™<br>Des<br>™<br>™<br>™<br>™<br>™<br>™™<br>™<br>™<br>™<br>™<br>™<br>™<br>™<br>™<br>™<br>™<br>™<br>4**=**5|™<br>™<br>™<br>™<br>™|
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
## **DISCLAIMER**
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
## **LIFE SUPPORT POLICY**
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user.
## **ANTI-COUNTERFEITING POLICY**
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
## **PRODUCT STATUS DEFINITIONS**
## **Definition of Terms**
|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change<br>in anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make<br>changes at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|
Rev. I68
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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