BC557BTF

**DATA SHEET www.onsemi.com** 

## PNP Epitaxial Silicon Transistor 

## BC556, BC557, BC558, BC559, BC560 

## **Features** 

- Switching and Amplifier 

- High−Voltage: BC556, VCEO = −65 V 

- Low−Noise: BC559, BC560 

- Complement to BC546, BC547, BC548, BC549, and BC550 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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TO−92−3<br>CASE 135AN<br>Straight Lead<br>1 23 Bulk Packing<br>TO−92−3<br>CASE 135AR<br>1<br>2 Bent Lead<br>3 Tape & Reel<br>Fan−Fold<br>1. Collector<br>2. Base<br>3. Emitter<br>**----- End of picture text -----**<br>


**ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 

|**ABSOLUTE MAXIMUM RATINGS**(TA|= 25°C unl|ess otherwise|noted)|
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Collector - Base Voltage<br>BC556<br>BC557 / BC560<br>BC558 / BC559|VCBO|−80<br>−50<br>−30|V|
|Collector - Emitter Voltage<br>BC556<br>BC557 / BC560<br>BC558 / BC559|VCEO|−65<br>−45<br>−30|V|
|Emitter - Base Voltage|VEBO|−5|V|
|Collector Current (DC)|IC|−100|mA|
|Peak Collector Current (Pulse)|ICP|−200|mA|
|Peak Base Current (Pulse)|IBP|−200|mA|
|Junction Temperature|TJ|150|°C|
|Storage Temperature Range|TSTG|−65 to +150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **MARKING DIAGRAM** 

ABC 5xxx YWW A = Assembly Location BC5xxx= Specific Device Code xxx = 56A, 56B, 57A, 57B, 58B, 59B, 59C, 60C Y = Year WW = Work Week 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

## **THERMAL CHARACTERISTICS** (Note 1) 

(TA = 25 ° C unless otherwise noted) 

|**THERMAL CHARACTERISTICS**(Note<br>(TA= 25°C unless otherwise noted)|1)|||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max.**|**Unit**|
|Total Device Dissipation<br>Derate above 25°C|PD|500<br>4.0|mW<br>mW/°C|
|Thermal Resistance, Junction−to−Ambient|R�JA|250|°C/W|
|1. PCB size: FR−4, 76 mm x 114 mm x 1.57<br>with minimum land pattern size.|mm (3.0 inch x 4.5 inch x 0.062 inch)|||



Publication Order Number: **BC556BTA/D** 

**1** 

© Semiconductor Components Industries, LLC, 2002 **December, 2021 − Rev. 2** 

**BC556, BC557, BC558, BC559, BC560** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICA**|**L CHARACTERISTICS**(TA= 25°C unle|**L CHARACTERISTICS**(TA= 25°C unle|ss otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ICBO|Collector Cut−Off Current||VCB= −30 V, IE= 0|||−15|nA|
|hFE|DC Current Gain||VCE= −5 V, IC= −2 mA|110||800||
|VCE(sat)|Collector−Emitter Saturation Voltage||IC= −10 mA, IB= −0.5 mA||−90|−300|mV|
||||IC= −100 mA, IB= −5 mA||−250|−650||
|VBE(sat)|Collector−Base Saturation Voltage||IC= −10 mA, IB= −0.5 mA||−700||mV|
||||IC= −100 mA, IB= −5 mA||−900|||
|VBE(on)|Base−Emitter On Voltage||VCE= −5 V, IC= −2 mA|−600|−660|−750|mV|
||||VCE= −5 V, IC= −10 mA|||−800||
|fT|Current Gain Bandwidth Product||VCE= −5 V, IC= −10 mA, f = 10 MHz||150||MHz|
|Cob|Output Capacitance||VCB= −10 V, IE= 0, f = 1 MHz|||6|pF|
|NF|Noise Figure|BC556 / BC557 / BC558|VCE= −5 V, IC= −200�A, f = 1 kHz,<br>RG= 2 k�||2|10|dB|
|||BC559 / BC560|||1|4||
|||BC559|VCE= −5 V, IC= −200�A, RG= 2 k�,<br>f = 30 to 15000 MHz||1.2|4.0||
|||BC560|||1.2|2.0||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **hFE CLASSIFICATION** 

|**hFE CLASSIFICATION**||||
|---|---|---|---|
|**Classification**|**A**|**B**|**C**|
|hFE2|110 ~ 220|200 ~ 450|420 ~ 800|



## **ORDERING INFORMATION** 

|**Part Number**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|BC556ABU|BC556A|TO−92−3, case 135AN (Pb−Free)|10,000 Units/ Bulk Box|
|BC556ATA|BC556A|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Fan−Fold|
|BC556BTA|BC556B|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Fan−Fold|
|BC556BTF|BC556B|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Tape & Reel|
|BC556BTFR|BC556B|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Tape & Reel|
|BC557ATA|BC557A|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Fan−Fold|
|BC557BTA|BC557B|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Fan−Fold|
|BC557BTF|BC557B|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Tape & Reel|
|BC558BTA|BC558B|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Fan−Fold|
|BC559BTA|BC559B|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Fan−Fold|
|BC559CTA|BC559C|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Fan−Fold|
|BC560CTA|BC560C|TO−92−3, case 135AR (Pb−Free)|2,000 Units/ Fan−Fold|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

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**2** 

**BC556, BC557, BC558, BC559, BC560** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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−50<br>−45 I B  = −400 � A<br>−40 I B  = −350 � A<br>−35 I B  = −300 � A<br>−30 I B = −250 � A<br>−25 I B  = −200 � A<br>−20 I B  = −150 � A<br>−15 IB = −100 � A<br>−10<br>−5 IB = −50 � A<br>−0<br>−2 −4 −6 −8 −10 −12 −14 −16 −18 −20<br>VCE, COLLECTOR−EMITTER VOLTAGE [V]<br>Figure 1. Static Characteristic<br>−10<br>I C  = 20 I B<br>−1<br>TA = 150 o C T A  = 25 oC<br>−0.1<br>T A  = −55 o C<br>−0.01<br>−1 −10 −100 −1000<br>IC, COLLECTOR CURRENT [mA]<br>, COLLECTOR CURRENT [mA]<br>IC<br>VOLTAGE [V]<br>, COLLECTOR−EMITTER SATURATION<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


**Figure 3. Collector−Emitter Saturation Voltage** 

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1000<br>T A  = 150 o C V CE  = −5 V<br>TA = 25 oC<br>TA = −55oC<br>100<br>10<br>−1 −10 −100 −1000<br>IC, COLLECTOR CURRENT [mA]<br>Figure 2. DC Current Gain<br>−1000<br>I C  = 20 I B<br>−100<br>−10<br>T A  = 150 oC T A  = 25 oC T A  = −55oC<br>−1<br>−0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2<br>VBE(sat), BASE−EMITTER SATURATION VOLTAGE [V]<br>, DC CURRENT GAIN<br>FE<br>h<br>, COLLECTOR CURRENT [mA]<br>IC<br>**----- End of picture text -----**<br>


**Figure 4. Base−Emitter Saturation Voltage** 

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−1000<br>VCE = −5 V<br>−100<br>−10<br>TA = 150 o C TA = 25 o C TA = −55 o C<br>0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2<br>VBE(on), BASE−EMITTER ON VOLTAGE [V]<br>, COLLECTOR CURRENT [mA]<br>IC<br>**----- End of picture text -----**<br>


**Figure 5. Base−Emitter On Voltage** 

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f=1MHz<br>10 I E = 0<br>1<br>−1 −10 −100<br>VCB, COLLECTOR−BASE VOLTAGE [V]<br>, CAPACITANCE [pF]<br>ob<br>C<br>**----- End of picture text -----**<br>


**Figure 6. Collector Output Capacitance** 

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**3** 

**BC556, BC557, BC558, BC559, BC560** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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1000<br>V  CE  = −5 V<br>100<br>10<br>−1 −10<br>IC, COLLECTOR CURRENT [mA]<br>PRODUCT [MHz]<br>, CURRENT GAIN BANDWIDTHfT<br>**----- End of picture text -----**<br>


**Figure 7. Current Gain Bandwidth Product** 

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1000<br>100<br>10<br>1<br>0 50 100 150<br>TA, AMBIENT TEMPERATURE [ ° C]<br>, POWER DISSIPATION [mW]<br>D<br>P<br>**----- End of picture text -----**<br>


**Figure 8. Power Deration** 

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1000<br>100 50%<br>30%<br>10%<br>10<br>5% Rthja(t)=r(t)*Rthja<br>2% Rthja=250 oC/W<br>D=1%<br>1<br>0.1 Single Pulse<br>0.01<br>1E−5 1E−4 1E−3 0.01 0.1 1 10 100 1000<br>t1, TIME [s]<br>RESISTANCE<br>r(t), NORMALIZED TRANSIENT THERMAL<br>**----- End of picture text -----**<br>


**Figure 9. Normalized Transient Thermal Resistance** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.825x4.76** CASE 135AN ISSUE O 

DATE 31 JUL 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13880G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.825X4.76 PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.83x4.76 LEADFORMED** CASE 135AR ISSUE O 

DATE 30 SEP 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13879G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

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