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BC547BRL1G
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 1.5 W, TO-92, Through Hole
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 1.5W
- DC Current Gain hFE: 200hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 300MHz
- Transistor Case Style: TO-92
- DC Current Gain hFE Min: 200hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 45V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.044 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## BC546B, BC547A, B, C, BC548B, C ## Amplifier Transistors ## **NPN Silicon** ## **Features** ## **http://onsemi.com** - Pb−Free Packages are Available* COLLECTOR 1 **MAXIMUM RATINGS** 2 **Rating Symbol Value Unit** BASE Collector - Emitter Voltage VCEO Vdc ~~&~~ BC546 65 3 BC547 45 EMITTER BC548 30 Collector - Base Voltage VCBO Vdc BC546 80 BC547 50 BC548 30 **TO−92** Emitter - Base Voltage VEBO 6.0 Vdc **CASE 29** Collector Current − Continuous IC 100 mAdc **STYLE 17** Total Device Dissipation @ TDerate above 25 ° C A = 25 ° C PD 6255.0 mW/mW ° C 1 23 1 2 3 Total Device Dissipation @ TC = 25 ° C PD 1.5 W STRAIGHT LEAD BENT LEAD Derate above 25 ° C 12 mW/ ° C TAPE & REEL Operating and Storage Junction TJ, Tstg −55 to +150 ° C Temperature Range ~~os~~ **THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit** Thermal Resistance, Junction−to−Ambient R JA 200 ° C/W BC ° 54xy Thermal Resistance, Junction−to−Case R JC 83.3 C/W **==> picture [99 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> BC<br>54xy<br>AYWW<br>x = 6, 7, or 8<br>y = A, B or C<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br> Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **BC546/D** **1** © Semiconductor Components Industries, LLC, 2012 **June, 2012 − Rev. 7** ## **BC546B, BC547A, B, C, BC548B, C** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS **(TA= 25°C unless otherwise noted)|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector − Emitter Breakdown Voltage<br>(IC= 1.0 mA, IB= 0)<br>BC546<br>BC547<br>BC548|V(BR)CEO|65<br>45<br>30|−<br>−<br>−|−<br>−<br>−|V| |Collector − Base Breakdown Voltage<br>(IC= 100�Adc)<br>BC546<br>BC547<br>BC548|V(BR)CBO|80<br>50<br>30|−<br>−<br>−|−<br>−<br>−|V| |Emitter − Base Breakdown Voltage<br>(IE= 10�A, IC= 0)<br>BC546<br>BC547<br>BC548|V(BR)EBO|6.0<br>6.0<br>6.0|−<br>−<br>−|−<br>−<br>−|V| |Collector Cutoff Current<br>(VCE= 70 V, VBE= 0)<br>BC546<br>(VCE= 50 V, VBE= 0)<br>BC547<br>(VCE= 35 V, VBE= 0)<br>BC548<br>(VCE= 30 V, TA= 125°C)<br>BC546/547/548|ICES|−<br>−<br>−<br>−|0.2<br>0.2<br>0.2<br>−|15<br>15<br>15<br>4.0|nA<br>�A| |**ON CHARACTERISTICS**|||||| |DC Current Gain<br>(IC= 10�A, VCE= 5.0 V)<br>BC547A<br>BC546B/547B/548B<br>BC548C<br>(IC= 2.0 mA, VCE= 5.0 V)<br>BC546<br>BC547<br>BC548<br>BC547A<br>BC546B/547B/548B<br>BC547C/BC548C<br>(IC= 100 mA, VCE= 5.0 V)<br>BC547A/548A<br>BC546B/547B/548B<br>BC548C|hFE|−<br>−<br>−<br>110<br>110<br>110<br>110<br>200<br>420<br>−<br>−<br>−|90<br>150<br>270<br>−<br>−<br>−<br>180<br>290<br>520<br>120<br>180<br>300|−<br>−<br>−<br>450<br>800<br>800<br>220<br>450<br>800<br>−<br>−<br>−|−| |Collector − Emitter Saturation Voltage<br>(IC= 10 mA, IB= 0.5 mA)<br>(IC= 100 mA, IB= 5.0 mA)<br>(IC= 10 mA, IB= See Note 1)|VCE(sat)|−<br>−<br>−|0.09<br>0.2<br>0.3|0.25<br>0.6<br>0.6|V| |Base − Emitter Saturation Voltage<br>(IC= 10 mA, IB= 0.5 mA)|VBE(sat)|−|0.7|−|V| |Base − Emitter On Voltage<br>(IC= 2.0 mA, VCE= 5.0 V)<br>(IC= 10 mA, VCE= 5.0 V)|VBE(on)|0.55<br>−|−<br>−|0.7<br>0.77|V| |**SMALL−SIGNAL CHARACTERISTICS**|||||| |Current − Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 V, f = 100 MHz)<br>BC546<br>BC547<br>BC548|fT|150<br>150<br>150|300<br>300<br>300|−<br>−<br>−|MHz| |Output Capacitance<br>(VCB= 10 V, IC= 0, f = 1.0 MHz)|Cobo|−|1.7|4.5|pF| |Input Capacitance<br>(VEB= 0.5 V, IC= 0, f = 1.0 MHz)|Cibo|−|10|−|pF| |Small − Signal Current Gain<br>(IC= 2.0 mA, VCE= 5.0 V, f = 1.0 kHz)<br>BC546<br>BC547/548<br>BC547A<br>BC546B/547B/548B<br>BC547C/548C|hfe|125<br>125<br>125<br>240<br>450|−<br>−<br>220<br>330<br>600|500<br>900<br>260<br>500<br>900|−| |Noise Figure (IC= 0.2 mA, VCE= 5.0 V, RS= 2 k�, f = 1.0 kHz,�f = 200 Hz)<br>BC546<br>BC547<br>BC548|NF|−<br>−<br>−|2.0<br>2.0<br>2.0|10<br>10<br>10|dB| 1. IB is value for which IC = 11 mA at VCE = 1.0 V. **http://onsemi.com** **2** **BC546B, BC547A, B, C, BC548B, C** ## **BC547/BC548** **==> picture [490 x 586] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 1.0<br>1.5 VTACE = 25 = 10 V°C 0.90.8 TA = 25°C<br>VBE(sat) @ IC/IB = 10<br>1.0 0.7<br>0.8 0.6 VBE(on) @ VCE = 10 V<br>0.5<br>0.6<br>0.4<br>0.4 0.3<br>0.3 0.2<br>0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages<br>2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient<br>10 400<br>300<br>7.0 T A = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 5. Capacitances** **Figure 6. Current−Gain − Bandwidth Product** **http://onsemi.com** **3** **BC546B, BC547A, B, C, BC548B, C** ## **BC546** **==> picture [488 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>TA = 25°C<br>V CE = 5 V<br>T A = 25°C 0.8<br>VBE(sat) @ IC/IB = 10<br>2.0<br>0.6<br>1.0 VBE @ VCE = 5.0 V<br>0.4<br>0.5<br>0.2<br>0.2<br>VCE(sat) @ IC/IB = 10<br>0<br>0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 7. DC Current Gain Figure 8. “On” Voltage<br>2.0 -1.0<br>TA = 25°C<br>1.6 -1.4<br>20 mA 50 mA 100 mA 200 mA<br>1.2 -1.8<br>�VB for VBE<br>0.8 IC = -2.2 -55°C to 125°C<br>10 mA<br>0.4 -2.6<br>0 -3.0<br>0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient<br>40<br>TA = 25°C VCE = 5 V<br>500 TA = 25°C<br>20<br>Cib<br>200<br>10<br>100<br>6.0<br>50<br>4.0 Cob<br>20<br>2.0<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN (NORMALIZED)<br>C)°<br>VB, TEMPERATURE COEFFICIENT (mV/<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θ<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCTT<br>**----- End of picture text -----**<br> **Figure 11. Capacitance** **Figure 12. Current−Gain − Bandwidth Product** **http://onsemi.com** **4** **BC546B, BC547A, B, C, BC548B, C** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |BC546B|TO−92|5000 Units / Bulk| |BC546BG|TO−92<br>(Pb−Free)|5000 Units / Bulk| |BC546BRL1|TO−92|2000 / Tape & Reel| |BC546BRL1G|TO−92<br>(Pb−Free)|2000 / Tape & Reel| |BC546BZL1G|TO−92<br>(Pb−Free)|2000 / Ammo Box| |BC547ARL|TO−92|2000 / Tape & Reel| |BC547ARLG|TO−92<br>(Pb−Free)|2000 / Tape & Reel| |BC547AZL1G|TO−92<br>(Pb−Free)|2000 / Ammo Box| |BC547BG|TO−92<br>(Pb−Free)|5000 Units / Bulk| |BC547BRL1G|TO−92<br>(Pb−Free)|2000 / Tape & Reel| |BC547BZL1G|TO−92<br>(Pb−Free)|2000 / Ammo Box| |BC547CG|TO−92<br>(Pb−Free)|5000 Units / Bulk| |BC547CZL1G|TO−92<br>(Pb−Free)|2000 / Ammo Box| |BC548BG|TO−92<br>(Pb−Free)|5000 Units / Bulk| |BC548BRL1G|TO−92<br>(Pb−Free)|2000 / Tape & Reel| |BC548BZL1G|TO−92<br>(Pb−Free)|2000 / Ammo Box| |BC548CG|TO−92<br>(Pb−Free)|5000 Units / Bulk| |BC548CZL1G|TO−92<br>(Pb−Free)|2000 / Ammo Box| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **5** **BC546B, BC547A, B, C, BC548B, C** ## **PACKAGE DIMENSIONS** **TO−92 (TO−226)** CASE 29−11 ISSUE AM NOTES: **==> picture [376 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |A| |B|STRAIGHT LEAD|1.|DIMENSIONING AND TOLERANCING PER ANSI| |Y14.5M, 1982.| |2.|CONTROLLING DIMENSION: INCH.| |R|3.|CONTOUR OF PACKAGE BEYOND DIMENSION R| |mite|IS UNCONTROLLED.| |4.|LEAD DIMENSION IS UNCONTROLLED IN P AND| |P|BEYOND DIMENSION K MINIMUM.| |L| |SEATING|INCHES|MILLIMETERS| |PLANE|K|DIM|MIN|MAX|MIN|MAX| |Vi|A|0.175|0.205|4.45|5.20| |B|0.170|0.210|4.32|5.33| |C|0.125|0.165|3.18|4.19| |D|0.016|0.021|0.407|0.533| |X|=|X|D|SS5=—|G|0.045|0.055|1.15|1.39| |G|H|0.095|0.105|2.42|2.66| |J|0.015|0.020|0.39|0.50| |ye|H|J|———|K|0.500|---|12.70|---| |L|0.250|---|6.35|---| |V|C|N|0.080|0.105|2.04|2.66| |P|---|0.100|---|2.54| |SECTION X−X|R|0.115|---|2.93|---| |1|N|V|0.135|---|3.43|---| |N| |ome|a| **----- End of picture text -----**<br> **==> picture [367 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> R A B BENT LEAD NOTES:1. DIMENSIONING AND TOLERANCING PER<br>TAPE & REEL ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. CONTOUR OF PACKAGE BEYOND<br>DIMENSION R IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P<br>P AND BEYOND DIMENSION K MINIMUM.<br>T<br>SEATINGPLANE K DIM MILLIMETERSMIN MAX<br>A 4.45 5.20<br>B 4.32 5.33<br>C 3.18 4.19<br>a X X D GD 0.402.40 0.542.80<br>G J 0.39 0.50<br>J K 12.70 ---<br>i “ N 2.04 2.66<br>He V C 4 RP 1.502.93 4.00---<br>| | SECTION X−X = V 3.43 ---<br>1 N<br>STYLE 17:<br>PIN 1.<br>on 2.<br>**----- End of picture text -----**<br> 2. CONTROLLING DIMENSION: MILLIMETERS. 4. LEAD DIMENSION IS UNCONTROLLED IN P **==> picture [57 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 17:<br>PIN 1. COLLECTOR<br>2. BASE<br>3. EMITTER<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **ON Semiconductor Website** : **www.onsemi.com** **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com** **BC546/D** **6**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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