BC51-16PASX
Bipolar (BJT) Single Transistor, PNP, 45 V, 1 A, 420 mW, DFN2020D, Surface Mount
- Manufacturer: NEXPERIA
- Product type:
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:145MHz; Power Dissipation Pd:420mW; DC Collector Current:-1A; DC Current Gain hFE:100hFE
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: BC51
- Qualification: AEC-Q101
- Power Dissipation: 420mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transition Frequency: 145MHz
- Transistor Case Style: DFN2020D
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 1A
- Collector Emitter Voltage Max: 45V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.131 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **Important notice**
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com**
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved
Should be replaced with:
- **© Nexperia B.V. (year). All rights reserved** .
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding,
Kind regards,
Team Nexperia
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## **BC51PAS; BC52PAS; BC53PAS**
## **45 V/60 V/80 V, 1 A PNP medium power transistors**
**Rev. 1 — 19 June 2015 Product data sheet**
## **1. Product profile**
## **1.1 General description**
PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.
## **Table 1. Product overview**
|**Type numbe**~~**r**~~**[1]**|**Package**|**Package**|**NPN complement**|
|---|---|---|---|
|BC51PAS|DFN2020D-3|SOT1061D|BC54PAS|
|BC52PAS|||BC55PAS|
|BC53PAS|||BC56PAS|
[1] Valid for all available selection groups.
## **1.2 Features and benefits**
- High collector current capability Three current gain selections IC and ICM
- Reduced Printed-Circuit Board (PCB) Leadless very small SMD plastic area requirements package with medium power capability
- Exposed heat sink for excellent thermal Suitable for Automatic Optical and electrical conductivity Inspection (AOI) of solder joint
- AEC-Q101 qualified
## **1.3 Applications**
- Linear voltage regulators High-side switches
- Battery driven devices Power management
- MOSFET drivers
- Amplifiers
## **1.4 Quick reference data**
## **Table 2. Quick reference data**
_Tamb = 25_ _C unless otherwise specified_
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|VCEO|collector-emitter voltage|open base|||||
||BC51PAS series||-|-|45|V|
||BC52PAS series||-|-|60|V|
||BC53PAS series||-|-|80|V|
**==> picture [172 x 101] intentionally omitted <==**
**BC51PAS BC52PAS BC53PAS ; ;**
**NXP Semiconductors**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
**Table 2. Quick reference data** _…continued Tamb = 25_ _C unless otherwise specified_
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|IC|collector current||-|-|1|A|
|ICM|peak collector current|single pulse; tp1 ms|-|-|2|A|
|hFE|DC current gain|VCE=2 V; IC=150 mA<br>[1]|63|-|250||
||hFEselection -10|VCE=2 V; IC=150 mA<br>[1]|63|-|160||
||hFEselection -16|VCE=2 V; IC=150 mA<br>[1]|100|-|250||
[1] Pulse test: tp 300 ms; 0.02.
## **2. Pinning information**
## **Table 3. Pinning**
**==> picture [396 x 125] intentionally omitted <==**
**----- Start of picture text -----**<br>
Pin Description Simplified outline Graphic symbol<br>1 base<br>� �<br>2 emitter<br>3 collector �<br>�<br>� � ������<br>��������������������<br>**----- End of picture text -----**<br>
## **3. Ordering information**
## **Table 4. Ordering information**
|**Type numbe**~~**r**~~**[1]**|**Package**|**Package**|**Package**|
|---|---|---|---|
||**Name**|**Description**|**Version**|
|BC51PAS series|DFN2020D-3|plastic thermal enhanced ultra thin small<br>outline package; no leads; 3 terminals;<br>body 220.65 mm.|SOT1061D|
|BC52PAS series||||
|BC53PAS series||||
[1] Valid for all available selection groups.
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER **Product data sheet**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 19 June 2015**
**2 of 15**
**NXP Semiconductors**
## **BC51PAS BC52PAS BC53PAS ; ;**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
## **4. Marking**
**Table 5. Marking codes**
|**Type number**|**Marking code**|
|---|---|
|BC51PAS|C4|
|BC51-10PAS|C5|
|BC51-16PAS|C6|
|BC52PAS|C7|
|BC52-10PAS|C8|
|BC52-16PAS|C9|
|BC53PAS|CA|
|BC53-10PAS|CB|
|BC53-16PAS|CC|
## **5. Limiting values**
**Table 6. Limiting values**
_In accordance with the Absolute Maximum Rating System (IEC 60134)._
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**|
|---|---|---|---|---|---|
|VCBO|collector-base voltage|open emitter||||
||BC51PAS series||-|45|V|
||BC52PAS series||-|60|V|
||BC53PAS series||-|100|V|
|VCEO|collector-emitter voltage|open base||||
||BC51PAS series||-|45|V|
||BC52PAS series||-|60|V|
||BC53PAS series||-|80|V|
|VEBO|emitter-base voltage|open collector|-|5|V|
|IC|collector current||-|1|A|
|ICM|peak collector current|single pulse; tp1 ms|-|2|A|
|IB|base current||-|0.3|A|
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER **Product data sheet**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 19 June 2015**
**3 of 15**
**BC51PAS BC52PAS BC53PAS ; ;**
**NXP Semiconductors**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
**Table 6. Limiting values** _…continued_
_In accordance with the Absolute Maximum Rating System (IEC 60134)._
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|Ptot|total power dissipation|Tamb 25C|[1]|-|0.42|W|
||||[2]|-|0.81|W|
||||[3]|-|0.83|W|
||||[4]|-|1.10|W|
||||[5]|-|1.65|W|
|Tj|junction temperature|||-|150|C|
|Tamb|ambient temperature|||55|150|C|
|Tstg|storage temperature|||65|150|C|
- [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
- [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
- [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm[2] .
- [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm[2] .
- [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm[2] .
**==> picture [233 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
���������<br>���<br>����<br>��� ���<br>���<br>���<br>���<br>���<br>���<br>��� ���<br>���<br>��� ��� �� �� ��� ���<br>���������<br>**----- End of picture text -----**<br>
- (1) FR4 PCB, 4-layer copper, 1 cm[2]
- (2) FR4 PCB, single-sided copper, 6 cm[2]
- (3) FR4 PCB, single-sided copper, 1 cm[2]
- (4) FR4 PCB, 4-layer copper, standard footprint
- (5) FR4 PCB, single-sided copper, standard footprint
**Fig 1. Power derating curves**
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
**Product data sheet**
**Rev. 1 — 19 June 2015**
**4 of 15**
**BC51PAS BC52PAS BC53PAS ; ;**
**NXP Semiconductors**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
## **6. Thermal characteristics**
## **Table 7. Thermal characteristics**
|**Symbol**|**Parameter**<br>|**Conditions**||**Max**|**Unit**|
|---|---|---|---|---|---|
|Rth(j-a)|thermal resistance from junction to ambient<br>|in free air|[1]|298|K/W|
||||[2]|154|K/W|
||||[3]|151|K/W|
||||[4]|114|K/W|
||||[5]|76|K/W|
|Rth(j-sp)|thermal resistance from junction to solder point<br>|in free air||20|K/W|
- [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
- [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
- [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm[2] .
- [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm[2] .
- [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm[2]
**==> picture [481 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
���������<br>�� [�]<br>�������� ��������������<br>�����<br>����<br>���<br>�� [�] ����<br>����<br>���<br>���<br>����<br>��<br>����<br>����<br>� �<br>�� [��]<br>�� [��] �� [��] �� [��] �� [��] �� [��] � �� �� [�] �� [�]<br>������<br>**----- End of picture text -----**<br>
FR4 PCB, single-sided copper, tin-plated and standard footprint
**Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values**
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
**Product data sheet**
**Rev. 1 — 19 June 2015**
**5 of 15**
**BC51PAS BC52PAS BC53PAS ; ;**
**NXP Semiconductors**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
FR4 PCB, 4-layer copper, tin-plated and standard footprint.
**Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values**
FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm[2]
**Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values**
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER **Product data sheet**
All information provided in this document is subject to legal disclaimers.
**Rev. 1 — 19 June 2015**
**6 of 15**
**BC51PAS BC52PAS BC53PAS ; ;**
**NXP Semiconductors**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm[2]
**Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values**
FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm[2] **Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values**
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER **Product data sheet**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 19 June 2015**
**7 of 15**
**BC51PAS BC52PAS BC53PAS ; ;**
**NXP Semiconductors**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
## **7. Characteristics**
**Table 8. Characteristics** _Tamb = 25_ _C unless otherwise specified_
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|ICBO|collector-base cut-off current|VCB=30 V; IE= 0 A|-|-|100|nA|
|||VCB=30 V; IE= 0 A; Tj= 150C|-|-|10|A|
|IEBO|emitter-base cut-off current|VEB=5 V; IC= 0 A|-|-|100|nA|
|hFE|DC current gain|VCE=2 V; IC=5 mA|63|-|-||
|||VCE=2 V; IC=150 mA<br>[1]|63|-|250||
|||VCE=2 V; IC=500 mA<br>[1]|40|-|-||
||hFEselection -10|VCE=2 V; IC=150 mA<br>[1]|63|-|160||
||hFEselection -16|VCE=2 V; IC=150 mA<br>[1]|100|-|250||
|VCEsat|collector-emitter saturation<br>voltage|IC=500 mA; IB=50 mA<br>[1]|-|-|500|mV|
|VBE|base-emitter voltage|VCE=2 V; IC=500 mA<br>[1]|-|-|1|V|
|Cc|collector capacitance|VCB=10 V; IE= ie= 0 A; f = 1 MHz|-|15|-|pF|
|fT|transition frequency|VCE=5 V; IC=50 mA; f = 100 MHz|-|145|-|MHz|
[1] Pulse test: tp 300 ms; 0.02.
**==> picture [215 x 74] intentionally omitted <==**
**----- Start of picture text -----**<br>
VCE = 2 V<br>(1) Tamb = 100 C<br>(2) Tamb = 25 C<br>(3) Tamb = 55 C<br>Fig 7. DC current gain as a function of collector<br>current; typical values<br>**----- End of picture text -----**<br>
**==> picture [206 x 267] intentionally omitted <==**
**----- Start of picture text -----**<br>
ee SS<br>(A) \ Db<br>SLE<br>== eee<br>{-—---<br>oa AoC<br>| Zaennenee<br>|<br>CE<br>Tamb = 25 C<br>Fig 8. Collector current as a function of<br>collector-emitter voltage; typical values<br>**----- End of picture text -----**<br>
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER **Product data sheet**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 19 June 2015**
**8 of 15**
**NXP Semiconductors**
## **BC51PAS BC52PAS BC53PAS ; ;**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
**==> picture [468 x 74] intentionally omitted <==**
**----- Start of picture text -----**<br>
VCE = 2 V IC/IB = 10<br>(1) Tamb = 55 C (1) Tamb = 100 C<br>(2) Tamb = 25 C (2) Tamb = 25 C<br>(3) Tamb = 100 C (3) Tamb = 55 C<br>Fig 9. Base-emitter voltage as a function of collector Fig 10. Collector-emitter saturation voltage as a<br>current; typical values function of collector current; typical values<br>**----- End of picture text -----**<br>
## **8. Test information**
## **8.1 Quality information**
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard _Q101 - Stress test qualification for discrete semiconductors_ , and is suitable for use in automotive applications.
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER **Product data sheet**
All information provided in this document is subject to legal disclaimers. **Rev. 1 — 19 June 2015**
**9 of 15**
**NXP Semiconductors**
## **BC51PAS BC52PAS BC53PAS ; ;**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
## **9. Package outline**
**==> picture [233 x 163] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.65<br>1.3<br>0.45 max<br>0.35 0.04<br>0.35<br>0.25 max<br>1 2<br>2.1<br>1.1 1.9<br>0.9<br>0.3<br>0.2 3<br>1.6<br>1.4<br>2.1<br>1.9<br>Dimensions in mm 14-03-18<br>**----- End of picture text -----**<br>
**Fig 11. Package outline DFN2020D-3 (SOT1061D)**
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
**Product data sheet**
**Rev. 1 — 19 June 2015**
**10 of 15**
**NXP Semiconductors**
## **BC51PAS BC52PAS BC53PAS ; ;**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
## **10. Soldering**
**==> picture [497 x 639] intentionally omitted <==**
**----- Start of picture text -----**<br>
Footprint information for reflow soldering of DFN2020D-3 package SOT1061D<br>2.1<br>1.7<br>1.3<br>0.4 (2x)<br>0.3 (2x) 0.5 (2x)<br>0.5 (2x) 0.6 (2x) 0.7 (2x)<br>0.25<br>1.1<br>0.35 0.3 0.25<br>2.5 2.3<br>0.25<br>1 1.1 1.2<br>0.35<br>0.35<br>0.35<br>0.3<br>0.4<br>0.5<br>1.5<br>1.6<br>1.7<br>occupied area solder resist<br>solder lands solder paste<br>Dimensions in mm<br>14-03-05<br>Issue date sot1061d_fr<br>14-03-12<br>Fig 12. Reflow soldering footprint DFN2020D-3 (SOT1061D)<br>BC51_52_53PAS_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.<br>Product data sheet Rev. 1 — 19 June 2015 11 of 15<br>**----- End of picture text -----**<br>
**NXP Semiconductors**
## **BC51PAS BC52PAS BC53PAS ; ;**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
## **11. Revision history**
|**Table 9.**<br>**Revision history**|**Table 9.**<br>**Revision history**|**Table 9.**<br>**Revision history**|**Table 9.**<br>**Revision history**|**Table 9.**<br>**Revision history**|
|---|---|---|---|---|
|**Document ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**|
|BC51_52_53PAS_SER v.1|20150619|Product data sheet|-|-|
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
**Product data sheet**
**Rev. 1 — 19 June 2015**
**12 of 15**
**BC51PAS BC52PAS BC53PAS ; ;**
**NXP Semiconductors**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
## **12. Legal information**
## **12.1 Data sheet status**
|**Document status[1]**<br>**[2]**|**Product statu**~~**s**~~**[3]**|**Definition**|
|---|---|---|
|Objective [short] data sheet|Development|This document contains data from the objective specification for product development.|
|Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.|
|Product [short] data sheet|Production|This document contains the product specification.|
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
## **12.2 Definitions**
**Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
**Product specification —** The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
## **12.3 Disclaimers**
**Limited warranty and liability —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors.
**Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
**Suitability for use in automotive applications —** This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
**Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.
**Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
**Terms and conditions of commercial sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
BC51_52_53PAS_SER
© NXP Semiconductors N.V. 2015. All rights reserved.
All information provided in this document is subject to legal disclaimers.
**Product data sheet**
**Rev. 1 — 19 June 2015**
**13 of 15**
## **NXP Semiconductors**
## **BC51PAS BC52PAS BC53PAS ; ;**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
**No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
**Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
**Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
**Translations —** A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
## **12.4 Trademarks**
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
## **13. Contact information**
For more information, please visit: **http://www.nxp.com**
For sales office addresses, please send an email to: **salesaddresses@nxp.com**
© NXP Semiconductors N.V. 2015. All rights reserved.
BC51_52_53PAS_SER
All information provided in this document is subject to legal disclaimers.
**Product data sheet**
**Rev. 1 — 19 June 2015**
**14 of 15**
**BC51PAS BC52PAS BC53PAS ; ;**
**NXP Semiconductors**
**45 V/60 V/80 V, 1 A PNP medium power transistors**
## **14. Contents**
|**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**|
|---|---|
|1.1|General description . . . . . . . . . . . . . . . . . . . . . 1|
|1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . 1|
|1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**|
|**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**|
|**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 5**|
|**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|8.1|Quality information . . . . . . . . . . . . . . . . . . . . . . 9|
|**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**10**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12**|
|**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 13**|
|12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13|
|12.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|**13**|**Contact information. . . . . . . . . . . . . . . . . . . . . 14**|
|**14**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15**|
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
**© NXP Semiconductors N.V. 2015.**
**All rights reserved.**
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
**Date of release: 19 June 2015 Document identifier: BC51_52_53PAS_SER**
Updated at June 1, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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