BC32725BU

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## **BC327 PNP Epitaxial Silicon Transistor** 

## **Features** 

- Switching and Amplifier Applications 

- Suitable for AF-Driver Stages and Low-Power Output Stages 

- Complement to BC337 / BC338 

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October 2014<br>a4<br>4<br>1 TO-92<br>1. Collector   2. Base   3. Emitter<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|BC327BU|BC327|TO-92 3L|Bulk|
|BC32716BU|BC32716|TO-92 3L|Bulk|
|BC32716TA|BC32716|TO-92 3L|Ammo|
|BC32725BU|BC32725|TO-92 3L|Bulk|
|BC32725TA|BC32725|TO-92 3L|Ammo|
|BC32740BU|BC32740|TO-92 3L|Bulk|
|BC32740TA|BC32740|TO-92 3L|Ammo|



## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-Emitter Voltage|-50|V|
|VCEO|Collector-Emitter Voltage|-45|V|
|VEBO|Emitter-Base Voltage|-5|V|
|IC|Collector Current (DC)|-800|mA|
|TJ|Junction Temperature|150|°C|
|TSTG|Storage Temperature|-55 to 150|°C|



© 2002 Fairchild Semiconductor Corporation BC327 Rev. 1.1.0 

www.fairchildsemi.com 

## **Thermal Characteristics**[(1)] 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**<br>~~—_—S—s~~|**Parameter**<br>~~—_—S—s~~|**Value**<br>~~—_—S—s~~|**Unit**<br>~~—_—S—s~~|
|---|---|---|---|
|PD<br>~~—_—S—s~~|Power Dissipation<br>~~—_—S—s~~|625<br>~~—_—S—s~~|mW<br>~~—_—S—s~~|
||Derate Above 25°C<br>~~—_—S—s~~|5.0<br>~~—_—S—s~~|mW/°C<br>~~—_—S—s~~|
|RθJA<br>~~—_—S—s~~|Thermal Resistance, Junction-to-Ambient<br>~~—_—S—s~~|200<br>~~—_—S—s~~|°C/W<br>~~—_—S—s~~|



## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|BVCEO|Collector-Emitter Breakdown Voltage|IC= -10 mA, IB= 0|-45|||V|
|BVCES|Collector-Emitter Breakdown Voltage|IC= -0.1 mA, VBE= 0|-50|||V|
|BVEBO|Emitter-Base Breakdown Voltage|IE= -10μA, IC= 0|-5|||V|
|ICES|Collector Cut-Off Current|VCE= -45 V, IB= 0||-2|-100|nA|
|hFE1|DC Current Gain|VCE= -1 V, IC= -100 mA|100||630||
|hFE2||VCE= -1 V, IC= -300 mA|60||||
|VCE(sat)|Collector-Emitter Saturation Voltage|IC= -500 mA, IB= -50 mA|||-0.7|V|
|VBE(on)|Base-Emitter On Voltage|VCE= -1 V, IC= -300 mA|||-1.2|V|
|fT|Current Gain Bandwidth Product|VCE= -5 V, IC= -10 mA,<br>f = 20 MHz||100||MHz|
|Cob|Output Capacitance|VCB= -10 V, IE= 0,<br>f = 1 MHz||12||pF|



**hFE Classification Classification 16 25 40** hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60 ~ 100 ~ 170 ~ ~~—————~~ 

© 2002 Fairchild Semiconductor Corporation BC327 Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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-500-400 Tle -20-16<br>ae<br>-300 -12<br>-200 -8<br>IB = - 1.0mA<br>-100 IB = - 0.5mA -4<br>-0 OE IB = 0 I B = 0<br>-1 -2 -3 -4 -5 -10 -20 -30 -40 -50<br>VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE<br>Figure 1. Static Characteristic Figure 2. Static Characteristic<br>1000 -10<br>PULSE<br>IC = 10 IB<br>PULSE<br>VCE = - 2.0V<br>100 al -1 VCE(sat)<br>- 1.0V<br>10 ee -0.1<br>VBE(sat)<br>1 -0.01<br>-0.1 = -1 RE -10 SE -100 -1000 -0.1 -1 -10 -100 -1000<br>IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT<br>Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage<br>Collector-Emitter Saturation Voltage<br>-1000 1000<br>V CE = -1V VCE = -5.0V<br>PULSE<br>-100<br>-10 100<br>-1<br>-0.1 10<br>-0.4 BAe -0.5 -0.6 -0.7 -0.8 -0.9 -1 eiiiisti -10 -100<br>VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT<br>IB = - 10 μ A<br>IB = - 20 μ A<br>PT = 600mW<br>IB = - 1.5mA IB = - 30 μ A<br>IB = - 5.0mA<br>IB = - 4.5mA<br>IB = - 4.0mA<br>IB = - 3.5mA<br>IB = - 3.0mA<br>IB = - 2.5mA<br>IB = - 2.0mA<br>μ A<br>IB = - 80IB = - 70IB μ  = - 60A μ A<br>IB = - 50 μ A<br>IB = - 40 μ A<br>PT = 600mW<br>[mA], COLLECTOR CURRENTIC [mA], COLLECTOR CURRENTIC<br>, DC CURRENT GAINFE (sat)[V], SATURATION VOLTAGECE<br>h (sat), V<br>BE<br>V<br>[mA], COLLECTOR CURRENTIC<br>[MHz], GAIN-BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br>


**Figure 5. Base-Emitter On Voltage** 

**Figure 6. Gain Bandwidth Product** 

© 2002 Fairchild Semiconductor Corporation BC327 Rev. 1.1.0 

www.fairchildsemi.com 

3 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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