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BAW56W,115
Small Signal Diode, Dual Common Anode, 90 V, 130 mA, 1.25 V, 4 ns, 4 A
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- Manufacturer: NEXPERIA
- Product type: Small Signal Diodes
- Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:90V; Forward Current If(AV):130mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:4ns; Forward S
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: BAW56
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOT-323
- Diode Configuration: Dual Common Anode
- Forward Voltage Max: 1.25V
- Forward Surge Current: 4A
- Reverse Recovery Time: 4ns
- Average Forward Current: 130mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 90V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.032 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## **Important notice** Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - **© Nexperia B.V. (year). All rights reserved** . If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, Kind regards, Team Nexperia **BAV756S; BAW56 series High-speed switching diodes** **Product data sheet** **Rev. 6 — 18 March 2015** ## **1. Product profile** ## **1.1 General description** High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. ## **Table 1. Product overview** |**Type number**|**Package**|**Package**|**Package**|**Package**<br>**configuration**|**Configuration**| |---|---|---|---|---|---| ||**NXP**|**JEITA**|**JEDEC**||| |BAV756S|SOT363|SC-88|-|very small|quadruple common<br>anode/common cathode| |BAW56|SOT23|-|TO-236AB|small|dual common anode| |BAW56M|SOT883|SC-101|-|leadless ultra<br>small|dual common anode| |BAW56S|SOT363|SC-88|-|very small|quadruple common<br>anode/common anode| |BAW56T|SOT416|SC-75|-|ultra small|dual common anode| |BAW56W|SOT323|SC-70|-|very small|dual common anode| ## **1.2 Features and benefits** - High switching speed: trr 4 ns - Low leakage current - Small SMD plastic packages - Low capacitance: Cd 2 pF - Reverse voltage: VR 90 V - AEC-Q101 qualified ## **1.3 Applications** - High-speed switching - General-purpose switching ## **1.4 Quick reference data** **Table 2. Quick reference data** |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**Per diode**||||||| |IR|reverse current|VR= 80 V|-|-|0.5|A| |VR|reverse voltage||-|-|90|V| |trr|reverse recovery time|[1]|-|-|4|ns| - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. **==> picture [172 x 101] intentionally omitted <==** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** ## **2. Pinning information** |**Table 3.**<br>**Pinning**|**Table 3.**<br>**Pinning**|**Table 3.**<br>**Pinning**|**Table 3.**<br>**Pinning**|**Table 3.**<br>**Pinning**| |---|---|---|---|---| |**Pin**|**Description**|**Simplified outline**||**Symbol**| |**BAV756S**||||| |1|anode (diode 1)||1<br>3<br>2<br>4<br>5<br>6|_006aab103_<br>1<br>3<br>6<br>2<br>5<br>4| |2|cathode (diode 2)|||| |3|common anode (diode 2 and<br>diode 3)|||| |4|cathode (diode 3)|||| |5|anode (diode 4)|||| |6|common cathode (diode 1<br>and diode 4)|||| |**BAW56; BAW56T; BAW56W**||||| |1|cathode (diode 1)||_006aaa144_<br>1<br>2<br>3|_006aab099_<br>1<br>2<br>3| |2|cathode (diode 2)|||| |3|common anode|||| |**BAW56M**||||| |1|cathode (diode 1)|1<br>2|3<br>Transparent<br>top view|_006aab099_<br>1<br>2<br>3| |2|cathode (diode 2)|||| |3|common anode|||| |**BAW56S**||||| |1|cathode (diode 1)||1<br>3<br>2<br>4<br>5<br>6|_006aab102_<br>1<br>3<br>6<br>2<br>5<br>4| |2|cathode (diode 2)|||| |3|common anode (diode 3 and<br>diode 4)|||| |4|cathode (diode 3)|||| |5|cathode (diode 4)|||| |6|common anode (diode 1 and<br>diode 2)|||| © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 6 — 18 March 2015** **2 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** ## **3. Ordering information** ## **Table 4. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |BAV756S|SC-88|plastic surface-mounted package; 6 leads|SOT363| |BAW56|-|plastic surface-mounted package; 3 leads|SOT23| |BAW56M|SC-101|leadless ultra small plastic package; 3 solder lands;<br>body 1.00.60.5 mm|SOT883| |BAW56S|SC-88|plastic surface-mounted package; 6 leads|SOT363| |BAW56T|SC-75|plastic surface-mounted package; 3 leads|SOT416| |BAW56W|SC-70|plastic surface-mounted package; 3 leads|SOT323| ## **4. Marking** ## **Table 5. Marking codes** |**Type number**|**Marking cod**~~**e**~~**[1]**| |---|---| |BAV756S|A7*| |BAW56|A1*| |BAW56M|S5| |BAW56S|A1*| |BAW56T|A1| |BAW56W|A1*| - [1] * = -: made in Hong Kong - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China ## **5. Limiting values** ## **Table 6. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**| |---|---|---|---|---|---| |**Per diode**|||||| |VRRM|repetitive peak reverse<br>voltage||-|90|V| |VR|reverse voltage||-|90|V| |IF|forward current||||| ||BAV756S|Ts= 60C|-|250|mA| ||BAW56|Tamb 25C|-|215|mA| ||BAW56M|Tamb 25C|-|150|mA| ||BAW56S|Ts= 60C|-|250|mA| ||BAW56T|Ts= 90C|-|150|mA| ||BAW56W|Tamb 25C|-|150|mA| All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** **Rev. 6 — 18 March 2015** **3 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** **Table 6. Limiting values** _…continued_ _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**| |---|---|---|---|---|---| |IFRM|repetitive peak forward<br>current||-|500|mA| |IFSM|non-repetitive peak forward<br>current|square wave<br>[1]|||| |||tp= 1s|-|4|A| |||tp= 1 ms|-|1|A| |||tp= 1 s|-|0.5|A| |Ptot|total power dissipation|[2]|||| ||BAV756S|Ts= 60C|-|350|mW| ||BAW56|Tamb 25C|-|250|mW| ||BAW56M|Tamb 25C<br>[3]|-|250|mW| ||BAW56S|Ts= 60C|-|350|mW| ||BAW56T|Ts= 90C<br>[4]|-|170|mW| ||BAW56W|Tamb 25C|-|200|mW| |**Per device**|||||| |IF|forward current||||| ||BAV756S|Ts= 60C|-|100|mA| ||BAW56|Tamb 25C|-|125|mA| ||BAW56M|Tamb 25C|-|75|mA| ||BAW56S|Ts= 60C|-|100|mA| ||BAW56T|Ts= 90C|-|75|mA| ||BAW56W|Tamb 25C|-|130|mA| |Tj|junction temperature||-|150|C| |Tamb|ambient temperature||65|+150|C| |Tstg|storage temperature||65|+150|C| [1] Tj = 25 C prior to surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Reflow soldering is the only recommended soldering method. [4] Single diode loaded. ## **6. Thermal characteristics** |**Table 7.**<br>**Thermal characteristics**|**Table 7.**<br>**Thermal characteristics**|**Table 7.**<br>**Thermal characteristics**|**Table 7.**<br>**Thermal characteristics**|**Table 7.**<br>**Thermal characteristics**|**Table 7.**<br>**Thermal characteristics**|**Table 7.**<br>**Thermal characteristics**| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |**Per diode**||||||| |Rth(j-a)|thermal resistance from<br>junction to ambient|in free air<br>[1]||||| ||BAW56||-|-|500|K/W| ||BAW56M|[2]|-|-|500|K/W| ||BAW56W||-|-|625|K/W| © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 18 March 2015** **4 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** **Table 7. Thermal characteristics** _…continued_ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |Rth(j-sp)|thermal resistance from<br>junction to solder point|||||| ||BAV756S||-|-|255|K/W| ||BAW56||-|-|360|K/W| ||BAW56S||-|-|255|K/W| ||BAW56T||-|-|350|K/W| ||BAW56W||-|-|300|K/W| - [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. ## **7. Characteristics** ## **Table 8. Characteristics** _Tamb = 25_ _C unless otherwise specified._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**Per diode**||||||| |VF|forward voltage|[1]||||| |||IF= 1 mA|-|-|715|mV| |||IF= 10 mA|-|-|855|mV| |||IF= 50 mA|-|-|1|V| |||IF= 150 mA|-|-|1.25|V| |IR|reverse current|VR= 25 V|-|-|30|nA| |||VR= 80 V|-|-|0.5|A| |||VR= 25 V; Tj= 150C|-|-|30|A| |||VR= 80 V; Tj= 150C|-|-|150|A| |Cd|diode capacitance|VR= 0 V; f = 1 MHz|-|-|2|pF| |trr|reverse recovery time|[2]|-|-|4|ns| |VFR|forward recovery voltage|[3]|-|-|1.75|V| - [1] Pulse test: tp 300 s; 0.02. - [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. - [3] When switched from IF = 10 mA; tr = 20 ns. © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. **Rev. 6 — 18 March 2015** **Product data sheet** **5 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** ## **High-speed switching diodes** **==> picture [233 x 248] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab109<br>10 [3]<br>IF<br>(mA)<br>10 [2]<br>10<br>(1) (2) (3) (4)<br>1<br>10 [−] [1]<br>0.2 0.6 1.0 1.4<br>VF (V)<br>(1) Tamb = 150 C<br>(2) Tamb = 85 C<br>(3) Tamb = 25 C<br>(4) Tamb = 40 C<br>**----- End of picture text -----**<br> - **Fig 1. Forward current as a function of forward voltage; typical values** **==> picture [234 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab110<br>10 [2]<br>IR<br>( μ A) (1)<br>10<br>1 (2)<br>10 [−] [1]<br>(3)<br>10 [−] [2]<br>10 [−] [3]<br>10 [−] [4]<br>(4)<br>10 [−] [5]<br>0 20 40 60 80 100<br>VR (V)<br>(1) Tamb = 150 C<br>(2) Tamb = 85 C<br>(3) Tamb = 25 C<br>(4) Tamb = 40 C<br>Fig 3. Reverse current as a function of reverse<br>voltage; typical values<br>**----- End of picture text -----**<br> **==> picture [233 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] mbg704<br>IFSM<br>(A)<br>10<br>1<br>10 [−] [1]<br>1 10 10 [2] 10 [3] 10 [4]<br>tp ( μ s)<br>Based on square wave currents.<br>Tj = 25 C; prior to surge<br>**----- End of picture text -----**<br> **Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values** **==> picture [233 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> mbh191<br>2.5<br>Cd<br>(pF)<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>0 5 10 15 20 25<br>VR (V)<br>f = 1 MHz; Tamb = 25 C<br>**----- End of picture text -----**<br> **Fig 4. Diode capacitance as a function of reverse voltage; typical values** © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 18 March 2015** **6 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** ## **8. Test information** **==> picture [497 x 296] intentionally omitted <==** **----- Start of picture text -----**<br> tr tp<br>t<br>D.U.T.<br>10 %<br>RS = 50 Ω IF SAMPLING + IF trr t<br>OSCILLOSCOPE<br>V = VR + IF × RS Ri = 50 Ω<br>90 % (1)<br>VR<br>mga881<br>input signal output signal<br>(1) IR = 1 mA<br>Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05<br>Oscilloscope: rise time tr = 0.35 ns<br>Fig 5. Reverse recovery time test circuit and waveforms<br>I 1 k Ω 450 Ω<br>I V<br>90 %<br>RS = 50 Ω D.U.T. OSCILLOSCOPE VFR<br>Ri = 50 Ω<br>10 %<br>t t<br>tr tp<br>input signal output signal<br>mga882<br>**----- End of picture text -----**<br> Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle 0.005 **Fig 6. Forward recovery voltage test circuit and waveforms** ## **8.1 Quality information** This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard _Q101 - Stress test qualification for discrete semiconductors_ , and is suitable for use in automotive applications. © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 18 March 2015** **7 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** ## **9. Package outline** **==> picture [484 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 0.62<br>3.0 1.1<br>0.55<br>2.8 0.9<br>0.55 0.50<br>0.47 0.46<br>3<br>0.30 3<br>0.45 0.22<br>0.15<br>2.5 1.4<br>2.1 1.2 0.65 1.02<br>0.95<br>0.30<br>0.22 2 1<br>1 2<br>0.48 0.15<br>0.38 0.09 0.20<br>1.9 0.12<br>0.35<br>Dimensions in mm 04-11-04 Dimensions in mm 03-04-03<br>**----- End of picture text -----**<br> **Fig 7. Package outline BAW56 (SOT23/TO-236AB)** **Fig 8. Package outline BAW56M (SOT883/SC-101)** **==> picture [483 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2 1.1 1.8 0.95<br>1.8 0.8 1.4 0.60<br>6 5 4 0.45 3 0.45<br>0.15 0.15<br>2.2 1.35 1.75 0.9<br>2.0 1.15 pin 1 1.45 0.7<br>index<br>1 2<br>1 2 3<br>0.3 0.25 0.30 0.25<br>0.65 0.15 0.10<br>1.3 0.2 0.10 1<br>Dimensions in mm 14-10-03 Dimensions in mm 04-11-04<br>**----- End of picture text -----**<br> **Fig 9. Package outline BAV756S and BAW56S (SOT363/SC-88)** **Fig 10. Package outline BAW56T (SOT416/SC-75)** **==> picture [237 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2 1.1<br>1.8 0.8<br>3 0.45<br>0.15<br>2.2 1.35<br>2.0 1.15<br>1 2<br>0.4 0.25<br>0.3 0.10<br>1.3<br>Dimensions in mm 04-11-04<br>**----- End of picture text -----**<br> **Fig 11. Package outline BAW56W (SOT323/SC-70)** All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** **Rev. 6 — 18 March 2015** **8 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** ## **10. Packing information** **Table 9. Packing methods** _The indicated -xxx are the last three digits of the 12NC ordering code.[[][1][]]_ |**Type number**|**Package**|**Description**|**Packing quantity**|**Packing quantity**| |---|---|---|---|---| ||||**3 000**|**10 000**| |BAV756S|SOT363|4 mm pitch, 8 mm tape and reel; T1<br>[2]|-115|-135| |||4 mm pitch, 8 mm tape and reel; T2<br>[3]|-125|-165| |BAW56|SOT23|4 mm pitch, 8 mm tape and reel|-215|-235| |BAW56M|SOT883|2 mm pitch, 8 mm tape and reel|-|-315| |BAW56S|SOT363|4 mm pitch, 8 mm tape and reel; T1<br>[2]|-115|-135| |||4 mm pitch, 8 mm tape and reel; T2<br>[3]|-125|-165| |BAW56T|SOT416|4 mm pitch, 8 mm tape and reel|-115|-135| |BAW56W|SOT323|4 mm pitch, 8 mm tape and reel|-115|-135| [1] For further information and the availability of packing methods, see Section 14. - [2] T1: normal taping - [3] T2: reverse taping ## **11. Soldering** **==> picture [372 x 238] intentionally omitted <==** **----- Start of picture text -----**<br> 3.3<br>2.9<br>1.9<br>solder lands<br>solder resist<br>3 1.7 2<br>solder paste<br>0.7 0.6 occupied area<br>(3 × ) (3 × )<br>Dimensions in mm<br>0.5<br>(3 × )<br>0.6<br>(3 × )<br>1 sot023_fr<br>**----- End of picture text -----**<br> **Fig 12. Reflow soldering footprint BAW56 (SOT23/TO-236AB)** © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 18 March 2015** **9 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** **==> picture [377 x 250] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2<br>1.2<br>(2 × )<br>1.4<br>(2 × )<br>solder lands<br>4.6 2.6 solder resist<br>occupied area<br>Dimensions in mm<br>1.4<br>preferred transport direction during soldering<br>2.8<br>4.5 sot023_fw<br>**----- End of picture text -----**<br> **Fig 13. Wave soldering footprint BAW56 (SOT23/TO-236AB)** **==> picture [352 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1.3<br>0.7 R0.05 (12 × )<br>solder lands<br>solder resist<br>0.9 0.6 0.7<br>0.25 solder paste<br>(2 × )<br>occupied area<br>0.3<br>(2 × ) 0.3 Dimensions in mm<br>0.4<br>0.4<br>(2 × )<br>sot883_fr<br>**----- End of picture text -----**<br> **==> picture [217 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Reflow soldering is the only recommended soldering method.<br>**----- End of picture text -----**<br> **Fig 14. Reflow soldering footprint BAW56M (SOT883/SC-101)** © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 18 March 2015** **10 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** **==> picture [396 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 2.65<br>solder lands<br>2.35 1.5 0.6 0.5 0.4 (2 × )<br>(4 × ) (4 × ) solder resist<br>solder paste<br>0.5 0.6<br>occupied area<br>(4 × ) (2 × )<br>0.6<br>Dimensions in mm<br>(4 × )<br>1.8 sot363_fr<br>Fig 15. Reflow soldering footprint BAV756S and BAW56S (SOT363/SC-88)<br>1.5<br>solder lands<br>4.5 0.3 2.5<br>solder resist<br>occupied area<br>1.5<br>Dimensions in mm<br>preferred transport<br>1.3 1.3 direction during soldering<br>2.45<br>5.3 sot363_fw<br>**----- End of picture text -----**<br> **Fig 16. Wave soldering footprint BAV756S and BAW56S (SOT363/SC-88)** © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 18 March 2015** **11 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** **==> picture [221 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2<br>0.6 1.1<br>0.7<br>2<br>3<br>2.0 0.85 1.5<br>0.5<br>1 (3x)<br>0.6<br>(3x) msa438<br>1.9<br>Dimensions in mm solder lands solder paste<br>solder resist occupied area<br>**----- End of picture text -----**<br> **Fig 17. Reflow soldering footprint BAW56T (SOT416/SC-75)** **==> picture [272 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> 2.65<br>0.75 1.325<br>1.30<br>solder lands<br>2<br>solder paste<br>0.60 3 0.50<br>2.35 0.85 (3 × ) (3 × ) 1.90 solder resist<br>1 occupied area<br>Dimensions in mm<br>0.55<br>(3 × ) 2.40 msa429<br>**----- End of picture text -----**<br> **Fig 18. Reflow soldering footprint BAW56W (SOT323/SC-70)** **==> picture [312 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 4.60<br>4.00<br>1.15<br>2<br>3<br>3.65 2.10 2.70<br>solder lands<br>1 0.90 solder resist<br>(2 × )<br>occupied area<br>Dimensions in mm<br>msa419<br>preferred transport direction during soldering<br>**----- End of picture text -----**<br> **Fig 19. Wave soldering footprint BAW56W (SOT323/SC-70)** All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** **Rev. 6 — 18 March 2015** **12 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** ## **12. Revision history** **Table 10. Revision history** |**Document ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |---|---|---|---|---| |BAV756S_BAW56_SER<br>v.6|20150318|Product data sheet|-|BAV756S_BAW56_SER_<br>5| |Modifications:|**•** The format of this data sheet has been redesigned to comply with the new identity<br>guidelines of NXP Semiconductors.<br>**•** Legal texts have been adapted to the new company name where appropriate.|||| |BAV756S_BAW56_SER_5|20071126|Product data sheet|-|BAV756S_2<br>BAW56_4<br>BAW56S_2<br>BAW56T_2<br>BAW56W_4| |BAV756S_2|19971021|Product specification|-|BAV756S_1| |BAW56_4|20030325|Product specification|-|BAW56_3| |BAW56S_2|19971021|Product specification|-|BAW56S_1| |BAW56T_2|19971219|Product specification|-|-| |BAW56W_4|19990511|Product specification|-|BAW56W_3| © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 18 March 2015** **13 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** ## **13. Legal information** ## **13.1 Data sheet status** |**Document status[1]**<br>**[2]**|**Product statu**~~**s**~~**[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **13.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Product specification —** The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ## **13.3 Disclaimers** **Limited warranty and liability —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use in automotive applications —** This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. **Terms and conditions of commercial sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 18 March 2015** **14 of 16** ## **NXP Semiconductors** ## **BAV756S BAW56 series ;** ## **High-speed switching diodes** **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. **Translations —** A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. ## **13.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **14. Contact information** For more information, please visit: **http://www.nxp.com** For sales office addresses, please send an email to: **salesaddresses@nxp.com** © NXP Semiconductors N.V. 2015. All rights reserved. BAV756S_BAW56_SER All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 6 — 18 March 2015** **15 of 16** **BAV756S BAW56 series ;** **NXP Semiconductors** **High-speed switching diodes** ## **15. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 3**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 4**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5**| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7**| |8.1|Quality information . . . . . . . . . . . . . . . . . . . . . . 7| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**10**|**Packing information . . . . . . . . . . . . . . . . . . . . . 9**| |**11**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**12**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13**| |**13**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 14**| |13.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14| |13.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| |13.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| |13.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15| |**14**|**Contact information. . . . . . . . . . . . . . . . . . . . . 15**| |**15**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP Semiconductors N.V. 2015.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 18 March 2015 Document identifier: BAV756S_BAW56_SER**
Updated at April 28, 2026
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