BAW101S,115

## **DISCRETE SEMICONDUCTORS** 

## **DATA SHEET** 

**==> picture [208 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
book, halfpage<br>MBD128<br>**----- End of picture text -----**<br>


**BAW101S** High voltage double diode 

2003 May 13 

**Philips Semiconductors** 

**BAW101S** 

## **High voltage double diode** 

## **FEATURES** 

- Small plastic SMD package 

- High switching speed: max. 50 ns 

- High continuous reverse voltage: 300 V 

- Electrically insulated diodes. 

## **APPLICATIONS** 

- High voltage switching 

## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|anode 1|
|2|n.c.|
|3|cathode 2|
|4|anode 2|
|5|n.c.|
|6|cathode 1|



- Automotive 

- Communication. 

## **DESCRIPTION** 

The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. 

## **MARKING** 

|**TYPE NUMBER**|**MARKING CODE**(1)|
|---|---|
|BAW101S|K2∗|



**==> picture [241 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
handbook, halfpage 6 5 4<br>6 5 4<br>1 2 3<br>1 2 3<br>Top view MBL892<br>**----- End of picture text -----**<br>


## **Note** 

1. ∗ = p: Made in Hong Kong. 

   - ∗ = t: Made in Malaysia. 

Fig.1 Simplified outline (SOT363) and symbol. 

- ∗ = W: Made in China. 

2003 May 13 

2 

Philips Semiconductors 

## High voltage double diode 

## BAW101S 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|**Per diode**||||||
|VR|continuous reverse voltage||−|300|V|
|||series connection|−|600|V|
|VRRM|repetitive peak reverse voltage||−|300|V|
|||series connection|−|600|V|
|IF|continuous forward current|single diode loaded; note 1; see Fig.2|−|250|mA|
|||double diode loaded; note 1; see Fig.2|−|140|mA|
|IFRM|repetitive peak forward current||−|625|mA|
|IFSM|non-repetitive peak forward current|square wave; Tj= 25°C prior to surge;<br>t = 1µs|−|4.5|A|
|Ptot|total power dissipation|Tamb= 25°C; note 1|−|350|mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|operating ambient temperature||−65|+150|°C|



## **Note** 

1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm[2] . 

## **ELECTRICAL CHARACTERISTICS** 

Tj = 25 ° 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|**Per diode**||||||
|VBR(R)|reverse breakdown voltage|IR= 100µA|300|−|V|
|VF|forward voltage|IF= 100 mA; note 1|−|1.1|V|
|IR|reverse current|VR= 250 V|−|150|nA|
|||VR= 250 V; Tamb= 150°C|−|50|µA|
|trr|reverse recovery time|when switched from IF= 30 mA to IR= 30 mA;<br>RL= 100Ω; measured at IR= 3 mA|−|50|ns|
|Cd|diode capacitance|VR= 0 V; f = 1 MHz|−|2|pF|



## **Note** 

1. Pulse test: pulse width = 300 µs; δ = 0.02. 

2003 May 13 

3 

Philips Semiconductors 

## High voltage double diode 

## BAW101S 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth j-s|thermal resistance from junction to soldering point|note 1|255|K/W|
|Rth j-a|thermal resistance from junction to ambient|note 2|357|K/W|



## **Notes** 

1. One or more diodes loaded. 

2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm[2] . 

## **GRAPHICAL DATA** 

**==> picture [241 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
MLE057<br>300<br>handbook, halfpage<br>IF<br>(mA)<br>200<br>(1)<br>(2)<br>100<br>0<br>0 50 100 150 200<br>Tamb (°C)<br>**----- End of picture text -----**<br>


**==> picture [242 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
MBG384<br>600<br>handbook, halfpage<br>IF<br>(mA)<br>(1) (2) (3)<br>400<br>200<br>0<br>0 1 VF (V) 2<br>**----- End of picture text -----**<br>


(1) Single diode loaded. (2) Double diode loaded. Device mounted on an FR4 printed-circuit board. Cathode-lead mounting pad = 1 cm[2] . 

Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. 

- (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. 

Fig.3 Forward current as a function of forward voltage. 

2003 May 13 

4 

Philips Semiconductors 

## High voltage double diode 

## BAW101S 

**==> picture [497 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
MBG703<br>10 [2]<br>handbook, full  pagewidth<br>IFSM<br>(A)<br>10<br>1<br>10 [−][1]<br>1 10 10 [2] 10 [3] 10 [4]<br>tp (µs)<br>Based on square wave currents.<br>Tj = 25 °C prior to surge.<br>**----- End of picture text -----**<br>


Fig.4  Maximum permissible non-repetitive peak forward current as a function of pulse duration. 

**==> picture [242 x 241] intentionally omitted <==**

**----- Start of picture text -----**<br>
MLE058<br>10 [2]<br>handbook, halfpage<br>IR<br>(µA)<br>10<br>(1) (2)<br>1<br>10 [−][1]<br>10 [−][2]<br>0 50 100 150 200<br>Tj (°C)<br>(1) VR = VRMAX: maximum values.<br>(2) VR = VRMAX: typical values.<br>**----- End of picture text -----**<br>


**==> picture [213 x 34] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.5 Reverse current as a function of junction<br>temperature.<br>**----- End of picture text -----**<br>


**==> picture [242 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
MLE059<br>0.6<br>handbook, halfpage<br>Cd<br>(pF)<br>0.5<br>0.4<br>0.3<br>0.2<br>0 2 4 6 8 10<br>VR (V)<br>**----- End of picture text -----**<br>


**==> picture [164 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
f = 1 MHz; Tj = 25 °C.<br>**----- End of picture text -----**<br>


**==> picture [214 x 34] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.6 Diode capacitance as a function of reverse<br>voltage; typical values.<br>**----- End of picture text -----**<br>


2003 May 13 

5 

Philips Semiconductors 

## High voltage double diode 

## BAW101S 

**==> picture [242 x 306] intentionally omitted <==**

**----- Start of picture text -----**<br>
MLE060<br>400<br>handbook, halfpage<br>VR<br>(V)<br>300<br>200<br>100<br>0<br>0 50 100 150 200<br>Tamb (°C)<br>Fig.7 Maximum permissible continuous reverse<br>voltage as a function of ambient<br>temperature.<br>**----- End of picture text -----**<br>


2003 May 13 

6 

Philips Semiconductors 

## High voltage double diode 

## BAW101S 

## **PACKAGE OUTLINE** 

## **Plastic surface mounted package; 6 leads** 

## **SOT363** 

**==> picture [495 x 590] intentionally omitted <==**

**----- Start of picture text -----**<br>
D B E A X<br>y HE v M A<br>6 5 4<br>Q<br>pin 1<br>index A<br>A1<br>1 2 3 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>A1<br>UNIT A max bp c D E e e1 HE Lp Q v w y<br>1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25<br>mm 0.1 1.3 0.65 0.2 0.2 0.1<br>0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  EIAJ PROJECTION<br> SOT363 SC-88 97-02-28<br>**----- End of picture text -----**<br>


2003 May 13 

7 

Philips Semiconductors 

## High voltage double diode 

## BAW101S 

## **DATA SHEET STATUS** 

|**LEVEL**|**DATA SHEET**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)(3)|**DEFINITION**|
|---|---|---|---|
|I|Objective data|Development|This data sheet contains data from the objective specifcation for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.|
|II|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specifcation.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.|
|III|Product data|Production|This data sheet contains data from the product specifcation. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Relevant changes will<br>be communicated via a Customer Product/Process Change Notifcation<br>(CPCN).|



## **Notes** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

2003 May 13 

8 

Philips Semiconductors 

High voltage double diode 

BAW101S 

## **NOTES** 

2003 May 13 

9 

Philips Semiconductors 

High voltage double diode 

BAW101S 

## **NOTES** 

2003 May 13 

10 

Philips Semiconductors 

High voltage double diode 

BAW101S 

## **NOTES** 

2003 May 13 

11 

## **Philips Semiconductors – a worldwide company** 

## **Contact information** 

For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . 

© Koninklijke Philips Electronics N.V. 2003 

SCA75 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

**==> picture [214 x 95] intentionally omitted <==**

Printed in The Netherlands 

613514/01/pp12 Date of release: 2003 May 13 Document order number: 9397 750 11148