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BAV74,215
Small Signal Diode, Dual Common Cathode, 60 V, 125 mA, 1 V, 4 ns, 4 A
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- Manufacturer: NEXPERIA
- Product type: Small Signal Diodes
- Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):125mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:4ns; Forw
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: BAV74
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: TO-236AB
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 1V
- Forward Surge Current: 4A
- Reverse Recovery Time: 4ns
- Average Forward Current: 125mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 60V
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.02 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## _**DISCRETE SEMICONDUCTORS**_ **==> picture [359 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> DATA SHEET<br>**----- End of picture text -----**<br> **==> picture [208 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> book, halfpage<br>M3D088<br>**----- End of picture text -----**<br> ## **BAV74** High-speed double diode Product data sheet 2004 Jan 14 Supersedes data of 1999 May 11 **==> picture [249 x 119] intentionally omitted <==** **NXP Semiconductors** **Product data sheet** ## **High-speed double diode** ## **BAV74** ## **FEATURES** - Small plastic SMD package - High switching speed: max. 4 ns - Continuous reverse voltage: max. 50 V - Repetitive peak reverse voltage: max. 60 V - Repetitive peak forward current: max. 450 mA. ## **APPLICATIONS** - High-speed switching in thick and thin-film circuits. ## **DESCRIPTION** The BAV74 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package. ## **MARKING** |**MARKING**|| |---|---| |**TYPE NUMBER**|**MARKING CODE**(1)| |BAV74|JA*| ## **PINNING** |**PINNING**|| |---|---| |**PIN**|**DESCRIPTION**| |1|anode(a1)| |2|anode(a2)| |3|cathode| **==> picture [245 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> umns 2 1<br>2 1<br>3<br>3<br>Top view MAM108<br>Fig.1 Simplified outline (SOT23) and symbol.<br>**----- End of picture text -----**<br> ## **Note** 1. * = p : Made in Hong Kong. - = t : Made in Malaysia. - = W: Made in China. ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 60134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |**Per diode**|||||| |VRRM|repetitive peak reverse<br>voltage||−|60|V| |VR|continuous reverse voltage||−|50|V| |IF|continuous forward current|single diode loaded; note 1; see Fig.2|−|215|mA| |||double diode loaded; note 1; see Fig.2|−|125|mA| |IFRM|repetitivepeak forward current||−|450|mA| |IFSM|non-repetitive peak forward<br>current|square wave; Tj= 25°C prior to surge; see Fig.4<br>t = 1µs<br>t = 1 ms<br>t = 1 s|−<br>−<br>−|4<br>1<br>0.5|A<br>A<br>A| |Ptot|totalpower dissipation|Tamb= 25°C; note 1|−|250|mW| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||−|150|°C| ## **Note** 1. Device mounted on an FR4 printed-circuit board. 2004 Jan 14 2 NXP Semiconductors Product data sheet ## High-speed double diode ## BAV74 ## **ORDERING INFORMATION** |**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**| |---|---|---|---| ||**NAME**|**DESCRIPTION**|**VERSION**| |BAV74|−|plastic surface mountedpackage; 3 leads|SOT23| ## **ELECTRICAL CHARACTERISTICS** ## Tj = 25 °C unless otherwise specified. |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MAX.**|**UNIT**| |---|---|---|---|---| |**Per diode**||||| |VF|forward voltage|see Fig.3<br>IF= 1 mA<br>IF= 10 mA<br>IF= 100 mA|715<br>855<br>1.0|mV<br>mV<br>V| |IR|reverse current|see Fig.5<br>VR= 25 V<br>VR= 50 V<br>VR= 25 V; Tj= 150°C<br>VR= 50 V; Tj= 150°C|30<br>0.1<br>30<br>100|nA<br>µA<br>µA<br>µA| |Cd|diode capacitance|f = 1 MHz; VR= 0; see Fig.6|1.5|pF| |trr|reverse recovery time|when switched from IF= 10 mA to<br>IR= 10 mA; RL= 100Ω; measured<br>at IR= 1 mA; see Fig.7|4|ns| |Vfr|forward recovery voltage|when switched from IF= 10 mA;<br>tr= 20 ns; see Fig.8|1.75|V| ## **THERMAL CHARACTERISTICS** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**| |---|---|---|---|---| |Rth(j-tp)|thermal resistance fromjunction to tie-point||360|K/W| |Rth(j-a)|thermal resistance fromjunction to ambient|note 1|500|K/W| ## **Note** 1. Device mounted on an FR4 printed-circuit board. 2004 Jan 14 3 NXP Semiconductors Product data sheet ## High-speed double diode ## BAV74 ## **GRAPHICAL DATA** **==> picture [242 x 290] intentionally omitted <==** **----- Start of picture text -----**<br> MBD033<br>300<br>I F<br>(mA)<br>200<br>single diode loaded<br>double diode loaded<br>100<br>0<br>0 100 T ( C)ambamb o 200<br>Device mounted on an FR4 printed-circuit board.<br>Fig.2 Maximum permissible continuous forward<br>current as a function of ambient<br>temperature.<br>**----- End of picture text -----**<br> **==> picture [242 x 290] intentionally omitted <==** **----- Start of picture text -----**<br> MBD033<br>300<br>I F<br>(mA)<br>200<br>single diode loaded<br>double diode loaded<br>100<br>0<br>0 100 T ( C)ambamb o 200<br>Device mounted on an FR4 printed-circuit board.<br>Fig.2 Maximum permissible continuous forward<br>current as a function of ambient<br>temperature.<br>**----- End of picture text -----**<br> **==> picture [242 x 290] intentionally omitted <==** **----- Start of picture text -----**<br> MBG383<br>300<br>handbook, halfpage<br>IF<br>(mA)<br>(1) (2) (3)<br>200<br>100<br>0<br>0 1 VF (V) 2<br>(1) Tj = 150 °C; typical values.<br>(2) Tj = 25 °C; typical values.<br>(3) Tj = 25 °C; maximum values.<br>Fig.3 Forward current as a function of forward<br>voltage.<br>**----- End of picture text -----**<br> **==> picture [497 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MBG704<br>10 [2]<br>handbook, full pagewidth<br>IFSM<br>(A)<br>10<br>1<br>10 [−] [1]<br>1 10 10 [2] 10 [3] 10 [4]<br>tp ( µ s)<br>Based on square wave currents.<br>Tj = 25 °C prior to surge.<br>Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.<br>**----- End of picture text -----**<br> 2004 Jan 14 4 NXP Semiconductors Product data sheet ## High-speed double diode **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MBG376<br>10 [5]<br>handbook, halfpage<br>IR<br>(nA)<br>10 [4]<br>(1) (2) (3)<br>10 [3]<br>10 [2]<br>10<br>0 100 Tj ( [o] C) 200<br>(1) VR = 50 V; maximum values.<br>(2) VR = 50 V; typical values.<br>(3) VR = 25 V; typical values.<br>Fig.5 Reverse current as a function of junction<br>temperature.<br>**----- End of picture text -----**<br> ## BAV74 **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MBG446<br>0.8<br>handbook, halfpage<br>Cd<br>(pF)<br>0.6<br>0.4<br>0.2<br>0<br>0 4 8 12 16<br>VR (V)<br>f = 1 MHz; Tj = 25 °C.<br>Fig.6 Diode capacitance as a function of reverse<br>voltage; typical values.<br>**----- End of picture text -----**<br> 2004 Jan 14 5 NXP Semiconductors Product data sheet ## High-speed double diode ## BAV74 **==> picture [497 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, full pagewidth<br>tr t p<br>t<br>D.U.T. 10%<br>R = 50SS Ω IF SAMPLING IF t rr t<br>OSCILLOSCOPE<br>V = V I x RRR F S R = 50ii Ω<br>90% (1)<br>VR<br>MGA881<br>input signal output signal<br>(1) IR = 1 mA.R = 1 mA. = 1 mA.<br>Fig.7 Reverse recovery voltage test circuit and waveforms.<br>**----- End of picture text -----**<br> **==> picture [497 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, full pagewidth<br>tr t p<br>t<br>D.U.T. 10%<br>R = 50SS Ω IF SAMPLING IF t rr t<br>OSCILLOSCOPE<br>V = V I x RRR F S R = 50ii Ω<br>90% (1)<br>VR<br>MGA881<br>input signal output signal<br>(1) IR = 1 mA.R = 1 mA. = 1 mA.<br>Fig.7 Reverse recovery voltage test circuit and waveforms.<br>**----- End of picture text -----**<br> **==> picture [497 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> I 1 k Ω 450 Ω<br>I V<br>90%<br>R = 50 Ω<br>S D.U.T. OSCILLOSCOPE Vfr<br>R = 50i Ω<br>10%<br>MGA882 t t<br>tr t p<br>input output<br>signal signal<br>Fig.8 Forward recovery voltage test circuit and waveforms.<br>**----- End of picture text -----**<br> 2004 Jan 14 6 NXP Semiconductors Product data sheet ## High-speed double diode ## BAV74 ## **PACKAGE OUTLINE** **==> picture [481 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic surface-mounted package; 3 leads SOT23<br>D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E e e1 HE Lp Q v w<br>1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm 0.1 1.9 0.95 0.2 0.1<br>0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-11-04<br> SOT23 TO-236AB<br>06-03-16<br>**----- End of picture text -----**<br> 2004 Jan 14 7 NXP Semiconductors Product data sheet ## High-speed double diode ## BAV74 ## **DATA SHEET STATUS** |**DATA SHEET STATUS**||| |---|---|---| |**DOCUMENT**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITION**| |Objective data sheet|Development|This document contains data from the objective specification for product<br>development.| |Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.| |Product data sheet|Production|This document contains theproduct specification.| ## **Notes** 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **DISCLAIMERS** **General** ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes** ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use** ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. ⎯ **Applications** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale** ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license** ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. ⎯ **Export control** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Quick reference data** ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ⎯ **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Jan 14 8 ## _**NXP Semiconductors**_ ## **Customer notification** This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ## **Contact information** For additional information please visit: **http://www.nxp.com** For sales offices addresses send e-mail to: **salesaddresses@nxp.com** ## © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands **==> picture [178 x 143] intentionally omitted <==** Date of release: 2004 Jan 14 R76/04/pp9 Document order number: 9397 750 12392
Updated at April 28, 2026
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