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BAV19WS-HG3-08
Small Signal Diode, Single, 100 V, 200 mA, 1.25 V, 50 ns, 1 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Small Signal Diodes
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-323
- Diode Configuration: Single
- Forward Voltage Max: 1.25V
- Forward Surge Current: 1A
- Reverse Recovery Time: 50ns
- Average Forward Current: 200mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.043 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
~~—~~ www.vishay.com ## **BAV19WS-G, BAV20WS-G, BAV21WS-G** ## Vishay Semiconductors ## **Small Signal Switching Diodes, High Voltage** ## **FEATURES** - Silicon epitaxial planar diodes - For general purpose - AEC-Q101 qualified - Base P/N-G3 - green, commercial grade - Base P/N-HG3 - green, AEC-Q101 qualified (part number available on request) ## **DESIGN SUPPORT TOOLS** click logo to get started Models Available - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **MECHANICAL DATA** **Case:** SOD-323 **Weight:** approx. 4 mg ## **Packaging codes / options:** 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box |**PARTS TABLE**|**PARTS TABLE**|**PARTS TABLE**|**PARTS TABLE**|**PARTS TABLE**|**PARTS TABLE**| |---|---|---|---|---|---| |**PART**|**TYPE**<br>**DIFFERENTIATION**|**ORDERING CODE**|**TYPE**<br>**MARKING**|**CIRCUIT**<br>**CONFIGURATION**|**REMARKS**| |BAV19WS-G|VR= 100 V|BAV19WS-G3-08 or BAV19WS-G3-18|AS|Single|Tape and reel| |BAV20WS-G|VR= 150 V|BAV20WS-G3-08 or BAV20WS-G3-18|AT|Single|Tape and reel| |BAV21WS-G|VR= 200 V|BAV21WS-G3-08 or BAV21WS-G3-18|AU|Single|Tape and reel| |**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)<br>~~pn~~|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)<br>~~pn~~|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)<br>~~pn~~|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)<br>~~pn~~|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)<br>~~pn~~|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)<br>~~pn~~| |---|---|---|---|---|---| |**PARAMETER**<br>~~a~~|**TEST CONDITION**<br>~~ee~~|**SYMBOL**<br>~~ee~~|**SYMBOL**<br>~~ee~~<br>|**VALUE**<br>|**UNIT**| |Continuous reverse voltage<br>~~a~~|~~es~~<br>~~ee~~<br>~~po~~|BAV19WS-G<br>~~es~~<br>~~ee~~|VR<br>~~es~~<br>~~ee~~<br>|100<br>~~es~~<br>|V<br>~~es~~| |||BAV20WS-G<br>~~ee~~<br>~~po~~|VR<br>~~ee~~<br>~~ee~~|150<br>~~ee~~|V| |||BAV21WS-G<br>~~ee ~~<br>~~po~~|VR<br>~~ee~~<br> ~~ee~~<br>~~ee~~|200<br>~~ee~~|V| |Repetitive peak reverse voltage<br>~~a~~|~~po~~<br>~~es~~<br>~~ee~~<br>~~ee~~|BAV19WS-G<br> <br>~~po~~<br>~~es~~|VRRM<br> ~~ee~~<br>~~es~~<br>~~ee~~|120<br>~~ee~~<br>~~es~~|V<br>~~es~~| |||BAV20WS-G<br>~~es~~<br>~~ee~~|VRRM<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|200<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~| |||BAV21WS-G<br>~~ee~~|VRRM<br>~~ee~~<br>~~ee~~<br>~~CO~~|250<br>~~ee~~|V<br>~~ee~~| |Forward continuous current(1)<br>~~a~~<br>~~GG~~|~~GG~~|~~GG~~|IF<br>~~ee~~<br>~~GG~~<br>~~CO~~|250<br>~~GG~~|mA<br>~~GG~~| |Rectified current (average) half wave<br>rectification with resistive load(1)|||IF(AV)<br>~~CO~~|200|mA| |Repetitivepeak forward current(1)<br>~~a~~|f≥50 Hz,θ= 180°||IFRM|625|mA| |Surge forward current<br>~~a~~<br>~~a~~|t < 1 s, TJ= 25 °C||IFSM<br>~~F~~|1|A| |Power dissipation<br>~~a~~<br>~~GG~~|~~GG~~|~~GG~~|Ptot<br>~~GG~~<br>~~F~~|200<br>~~GG~~|mW<br>~~GG~~| **Note** > (1) Valid provided that leads are kept at ambient temperature |**THERMAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**THERMAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**THERMAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**THERMAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**THERMAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)| |---|---|---|---|---| |**PARAMETER**|**TEST CONDITION**|**SYMBOL**|**VALUE**|**UNIT**| |Thermal resistancejunction to ambient air||RthJA|625|K/W| |Thermal resistancejunction to lead||RthJL|450|K/W| |Junction temperature||Tj|150|°C| |Storage temperature range||Tstg|-65 to +150|°C| |Operatingtemperature range||Top|-55 to +150|°C| Rev. 1.7, 12-Jul-17 Document Number: 83423 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **BAV19WS-G, BAV20WS-G, BAV21WS-G** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors |**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**TEST CONDITION**|**PART**|**SYMBOL**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |Forward voltage|IF= 100 mA||VF|||1|V| ||IF= 200 mA||VF|||1.25|V| |Reverse leakage current|VR= 100 V|BAV19WS-G|IR|||100|nA| ||VR= 100 V, Tj= 100 °C|BAV19WS-G|IR|||15|μA| ||VR= 150 V|BAV20WS-G|IR|||100|nA| ||VR= 150 V, Tj= 100 °C|BAV20WS-G|IR|||15|μA| ||VR= 200 V|BAV21WS-G|IR|||100|nA| ||VR= 200 V, Tj= 100 °C|BAV21WS-G|IR|||15|μA| |Dynamic Forward resistance|IF= 10 mA||rf||5||Ω| |Diode capacitance|VR= 0 V, f = 1 MHz||CD|||1.5|pF| |Reverse recovery time|IF= 30 mA, IR= 30 mA,<br>iR= 3 mA, RL= 100Ω||trr|||50|ns| ## **TYPICAL CHARACTERISTICS** (Tamb = 25 °C, unless otherwise specified) **==> picture [170 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100 Tj = 100 °C<br>10 25 °C<br>1<br>0.1<br>0.01<br>0 0.2 0.4 0.6 0.8 1<br>18858 VF - Forward Voltage (V)<br>- Forward Current (mA)<br>IF<br>**----- End of picture text -----**<br> **==> picture [179 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>200<br>150<br>100<br>50<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>18864 Tamb - Ambient Temperature (°C)<br>- Admissible Power Dissipation (mW)<br>tot<br>P<br>**----- End of picture text -----**<br> Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature **==> picture [171 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> 0.3<br>0.2<br>DC current IF<br>Current (rectif.) IO<br>0.1<br>0<br>0 30 60 90 120 150<br>18859 Tamb - Ambient Temperature (°C)<br>- Admissible Forward Current (A)<br>F<br>, I<br>IO<br>**----- End of picture text -----**<br> **==> picture [172 x 145] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>1 10 100<br>18861 IF - Forward Current (mA)<br>(Ω)<br>- Dynamic Forward Resistance<br>rf<br>**----- End of picture text -----**<br> Fig. 2 - Admissible Forward Current vs. Ambient Temperature Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 1.7, 12-Jul-17 Document Number: 83423 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **BAV19WS-G, BAV20WS-G, BAV21WS-G** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [444 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 2.01.8 Tj = 25 ° C<br>1.6<br>100<br>1.4<br>1.2<br>10 1.0<br>0.8<br>Reverse Voltage 0.6<br>1 BAV19WS-G VR = 100 V 0.4<br>BAV20WS-G VR = 150 V<br>BAV21WS-G VR = 200 V 0.2<br>0.1 0<br>0 40 80 120 160 200 0.1 1 10 100<br>18862_2 Tj - Junction Temperature (°C) 18863 VR - Reverse Voltage (V)<br>(25 °C) - Leakage Current)/IR j - Diode Capacitance (pF)CD<br>(T<br>IR<br>**----- End of picture text -----**<br> Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Capacitance vs. Reverse Voltage ## **PACKAGE DIMENSIONS** in millimeters (inches): **SOD-323** **==> picture [415 x 376] intentionally omitted <==** **----- Start of picture text -----**<br> 0.40 [0.016]<br>0.25 [0.010]<br>1.95 [0.077]<br>1.60 [0.063]<br>Cathode bar<br>2.85 [0.112]<br>2.50 [0.098]<br>Footprint recommendation:<br>0.8 [0.031] 0.8 [0.031]<br>1.6 [0.063]<br>Document no.: S8-V-3910.02-001 (4)<br>Created - Date: 24.August.2004<br>Rev. 6 - Date: 23.Sept.2016<br>17443<br>0° - 8°<br>1.15 [0.045] 0.8 [0.031] 0.2 [0.008]<br>0.15 [0.006] 0.10 [0.004] 0.1 [0.004] max.<br>0.40 [0.016] 0.20 [0.008]<br>1.5 [0.059] 1.1 [0.043]<br>0.6 [0.024]<br>**----- End of picture text -----**<br> Rev. 1.7, 12-Jul-17 Document Number: 83423 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 08-Feb-17 Document Number: 91000 **1**
Updated at April 28, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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