Image not available
Illustrative purposes only
BAT5402LRHE6327XTSA1
Small Signal Schottky Diode, Single, 30 V, 200 mA, 800 mV, 600 mA, 150 °C
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type:
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: BAT54 Series
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: TSLP-2-7
- Diode Configuration: Single
- Forward Voltage Max: 800mV
- Forward Surge Current: 600mA
- Reverse Recovery Time: 5ns
- Average Forward Current: 200mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 30V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.066 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **BAT24-02LS**
## **Single silicon RF Schottky diode**
Order now © enn ><) Simulation et) Support
## **Product description**
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02LS a suitable choice for mixer and detector functions in applications which frequencies are as high as 24 GHz.
## **Feature list**
- Low inductance _L_ S = 0.2 nH (typical)
- Low capacitance _C_ = 0.2 pF (typical) at voltage _V_ R = 0 V and frequency _f_ = 1 MHz
- TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 foot print
- Pb-free, RoHS compliant and halogen free
## **Product validation**
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
## **Potential applications**
For mixers and detectors in:
- Radar systems and modules
## **Device information**
|**Table 1**<br>**Part information**|||||
|---|---|---|---|---|
|**Product name / Ordering code**|**Package**|**Pin configuration**|**Marking**|**Pieces / Reel**|
|BAT24-02LS / BAT2402LSE6327XTSA1|TSSLP-2-1|Single, leadless|S|15 k|
_**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions!**_
Please read the Important Notice and Warnings at the end of this document
Datasheet **www.infineon.com**
v2.0 2018-06-28
**BAT24-02LS Single silicon RF Schottky diode**
**==> picture [105 x 47] intentionally omitted <==**
## **Table of contents**
## **Table of contents**
||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Feature list**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2|
|**2**|**Electrical performance in test fixture**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|2.1|Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|2.2|Characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3|
|**3**|**Package information TSSLP-2-1**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**4**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8|
|**5**|**References**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
## **1 Absolute maximum ratings**
**Table 2 Absolute maximum ratings at TA= 25°C, unless otherwise specified**
|**Parameter**|**Symbol**|**Values**|**Values**|**Unit**|**Note or test condition**|
|---|---|---|---|---|---|
|||**Min.**|**Max.**|||
|Diode reverse voltage|_V_R|–|4|V||
|Forward current|_I_F|–|110|mA||
|Total power dissipation|_P_TOT|–|100|mW|_T_S≤ 82°C**_1)_**|
|Junction temperature|_T_J|–|150|°C||
|Operating temperature|_T_OP|–|150|||
|Storage temperature|_T_STG|–|150|||
_**Attention** :_ _**Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component.**_
> 1 _T_ S is the soldering point temperature.
Datasheet
2
v2.0 2018-06-28
**BAT24-02LS Single silicon RF Schottky diode**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical performance in test fixture**
## **2 Electrical performance in test fixture**
## **2.1 Electrical characteristics**
## **Table 3 Electrical characteristics at** _**T**_ **A = 25°C, unless otherwise specified**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note or test condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Breakdown voltage|_V_BR|4|–|–|V|_I_R= 10 μA|
|Reverse current|_I_R|–|–|5|μA|_V_R= 1 V|
|Forward voltage|_V_R|0.16|0.25|0.32|V|_I_F= 1 mA|
|||0.25|0.35|0.41||_I_F= 10 mA|
|Diferential forward resistance|_R_F|–|8|10|Ω|_I_F= 10 mA / 50 mA**_1)_**|
|Capacitance|_C_|–|0.2|0.23|pF|_V_R= 0 V,_f_= 1 MHz|
|Inductance|_L_S|0.15|0.2|0.25|nH|**_2)_**|
## **2.2 Characteristic curves**
At _T_ A = 25 °C, unless otherwise specified
**==> picture [357 x 278] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.24<br>0.22<br>0.2<br>0.18<br>0.16<br>0.14<br>0.12<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>V [V]<br>R<br>C [pF]<br>**----- End of picture text -----**<br>
**Figure 1 Capacitance** _**C**_ **vs. reverse voltage** _**V**_ **R at frequency** _**f**_ **= 1 MHz**
> 1 _VF_ 50 mA − _VF_ 10 mA _R_ = _F_ 50 mA −10 mA
> 2 Parameter is not subject to production test, min/max values are specified by design.
Datasheet
3
v2.0 2018-06-28
**BAT24-02LS Single silicon RF Schottky diode**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical performance in test fixture**
**==> picture [357 x 278] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.24<br>0.22<br>0.2<br>0.18<br>0.16<br>0.14<br>0.12<br>-50 -25 0 25 50 75 100<br>TA [°C]<br>C [pF]<br>**----- End of picture text -----**<br>
**Figure 2 Capacitance** _**C**_ **vs. ambient temperature** _**T**_ **A at frequency** _**f**_ **= 1 MHz and reverse voltage** _**V**_ **R = 0 V**
**==> picture [357 x 278] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [3]<br>10 [2]<br>10 [1]<br>10 [0]<br>10 [-1]<br>10 [-2]<br>10 [-3]<br>0 0.2 0.4 0.6 0.8 1 1.2<br>VF [V]<br> [mA]<br>IF<br>**----- End of picture text -----**<br>
**Figure 3**
**Forward current** _**I**_ **F vs. forward voltage** _**V**_ **F**
Datasheet
v2.0 2018-06-28
4
**BAT24-02LS Single silicon RF Schottky diode**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical performance in test fixture**
**==> picture [357 x 278] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.45<br>0.4<br>10 mA<br>0.35<br>0.3<br>1 mA<br>0.25<br>0.2<br>100 µA<br>0.15<br>0.1<br>-50 -25 0 25 50 75 100<br>TA [°C]<br> [V]<br>F<br>V<br>**----- End of picture text -----**<br>
**Figure 4 Forward voltage** _**V**_ **F vs. ambient temperature** _**T**_ **A at different forward currents**
**==> picture [357 x 278] intentionally omitted <==**
**Figure 5 Differential forward resistance** _**R**_ **F vs. ambient temperature** _**T**_ **A between forward currents** _**I**_ **F = 10 mA and 50 mA**
Datasheet
v2.0 2018-06-28
5
**BAT24-02LS Single silicon RF Schottky diode**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical performance in test fixture**
**==> picture [357 x 278] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [1]<br>10 [0]<br>10 [-1]<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>V [V]<br>R<br> [µA]<br>R<br> I<br>**----- End of picture text -----**<br>
**Figure 6 Reverse current** _**I**_ **R vs. reverse voltage** _**V**_ **R**
**==> picture [357 x 278] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2]<br>10 [1]<br>10 [0]<br>10 [-1]<br>10 [-2]<br>10 [-3]<br>-50 -25 0 25 50 75 100<br>TA [°C]<br> [µA]<br>IR<br>**----- End of picture text -----**<br>
**Figure 7**
**Reverse current** _**I**_ **R vs. ambient temperature** _**T**_ **A at reverse voltage** _**V**_ **R = 1 V**
_Note: The curves shown in this chapter have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves._
Datasheet
6
v2.0 2018-06-28
**BAT24-02LS Single silicon RF Schottky diode**
## **Package information TSSLP-2-1**
## **3 Package information TSSLP-2-1**
**Figure 8 Package outline**
## **Figure 9 Foot print**
**Figure 10 Marking layout example**
## **Figure 11**
**==> picture [239 x 141] intentionally omitted <==**
**----- Start of picture text -----**<br>
4<br>PIN 1 2 0.35<br>INDEX MARKING<br>\ {<br>4-8 lin —<br>0.43<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ a e ]<br>Tape information<br>8<br>0.73<br>**----- End of picture text -----**<br>
_Note: See our_ _**Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages** ._
_The marking layout is an example. For the real marking code refer to the device information on the first page. The number of characters shown in the layout example is not necessarily the real one. The marking layout can consist of less characters._
Datasheet
v2.0 2018-06-28
7
**BAT24-02LS Single silicon RF Schottky diode**
**==> picture [105 x 47] intentionally omitted <==**
## **Thermal characteristics**
## **4 Thermal characteristics**
**==> picture [184 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
Table 4 Thermal resistance<br>**----- End of picture text -----**<br>
**==> picture [512 x 364] intentionally omitted <==**
**----- Start of picture text -----**<br>
Parameter Sym Values Unit Note or test condition<br>bol<br>Min. Typ. Max.<br>Thermal resistance R thJS – 675 – K/W T S = 82 °C [1)]<br>(junction - soldering point)<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160<br>T [°C]<br>S<br> [mA]<br>F<br>I<br>**----- End of picture text -----**<br>
**Figure 12 Permissible forward current** _**I**_ **F in DC operation**
1
For _R_ thJS in other conditions refer to the curves in this chapter.
Datasheet
8
v2.0 2018-06-28
**BAT24-02LS Single silicon RF Schottky diode**
**==> picture [105 x 47] intentionally omitted <==**
## **Thermal characteristics**
**==> picture [357 x 278] intentionally omitted <==**
**Figure 13 Thermal resistance** _**R**_ **thJS in pulse operation**
**==> picture [357 x 278] intentionally omitted <==**
**Figure 14 Permissible forward current ratio** _**I**_ **Fmax/** _**I**_ **DC in pulse operation**
Datasheet
9
v2.0 2018-06-28
**BAT24-02LS Single silicon RF Schottky diode**
**==> picture [105 x 47] intentionally omitted <==**
## **References**
## **5 References**
|[1]|Infineon AG -**_Recommendations for Printed Circuit Board Assembly of Infineon TSLP/TSSLP/TSNP_**<br>**_Packages_**|
|---|---|
## **Revision history**
|**Document**<br>**version**|**Date of**<br>**release**|**Description of changes**|
|---|---|---|
|2.0|2018-09-07|•<br>New layout of datasheet<br>•<br>Typical values and curves updated to the values of the production<br>(No product or process change behind)|
Datasheet
10
v2.0 2018-06-28
## **Trademarks**
All referenced product or service names and trademarks are the property of their respective owners.
**Edition 2018-06-28 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the **© 2018 Infineon Technologies AG** application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of **All Rights Reserved.** any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
**Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-obw1529670163684** Infineon Technologies in customer’s applications.
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 540,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →