BAT54 RFG

**BAT54 / A / C / S** Taiwan Semiconductor 

SEMICONDUCTOR(pgp 

## **200mA, 30V Schottky Barrier Diode** 

## FEATURES 

- Fast switching speed 

- Surface mound device type 

- Moisture sensitivity level: level 1, per J-STD-020 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- Adapters 

- For switching power supply 

- Inverter 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|200|mA|
|VRRM|30|V|
|IFSM|600|mA|
|VFat IF= 100mA|1|V|
|TJ MAX|125|°C|
|Package|SOT-23||



(Pb)[ROHS] A, 

## MECHANICAL DATA 

- Case: SOT-23 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Matte tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 1A whisker test 

- Weight: 8.00mg (approximately) 

/ re Y YW **SOT-23** 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|---|
|PARAMETER|SYMBOL|BAT54 BAT54A BAT54C BAT54S|BAT54 BAT54A BAT54C BAT54S|BAT54 BAT54A BAT54C BAT54S|BAT54 BAT54A BAT54C BAT54S|UNIT|
|Marking code on the device||KL1|KL2|KL3|KL4||
|Power dissipation|PD|200||||mW|
|Repetitive peak reverse voltage|VRRM|30||||V|
|Repetitive peak forward current<br>(tp≤1s;δ≤0.5)|IFRM|300||||mA|
|Forward current|IF|200||||mA|
|Non-Repetitive peak forward surge current<br>@ t<1.0s|IFSM|600||||mA|
|Junction temperature range|TJ|-55 to +125||||°C|
|Storage temperature range|TSTG|-55 to +125||||°C|



1 Version: G2007 

**BAT54 / A / C / S** Taiwan Semiconductor 

THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 500 °C/W ELECTRICAL SPECIFICATIONS ~~_=—T_=i_______|~~ (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN MAX UNIT ~~eses~~ IF = 0.1mA, TJ = 25°C - 0.24 V ~~po |~~ IF = 1mA, TJ = 25°C - 0.32 V ~~po | |~~ Forward voltage per diode[(1)] IF = 10mA, TJ = 25°C VF - 0.40 V ~~po — | | |~~ IF = 30mA, TJ = 25°C - 0.50 V ~~po — | | |~~ IF = 100mA, TJ = 25°C - 1.00 V ~~po~~ ~~**—** ||~~ ~~**| |** Ge~~ Reverse voltage IR = 100 μA, TJ = 25°C VR 30 - V ~~a~~ Reverse current @ rated VR per diode[(2)] VR = 25 V, TJ = 25°C IR - 2 μA Junction capacitance f = 1MHz, VR = 1V CJ - 10 pF IF = IR = 10mA, Reverse recovery time RL = 100Ω, Irr = 1mA trr - 5 ns **Notes:** ~~po~~ 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

|ORDERING CODE(1)(2)|PACKAGE|PACKING|
|---|---|---|
|BAT5x RF|SOT-23|3K / 7" Reel|
|BAT5x RFG|SOT-23|3K / 7" Reel|



## **Notes:** 

1.  "x"  defines part no. from "4" to "4S" 

2.  "G" means green compound (halogen-free) 

2 Version: G2007 

**BAT54 / A / C / S** Taiwan Semiconductor 

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BAT54 / A / C / S<br>ay [__—_$_$_$_$_$_$_$____] Taiwan Semiconductor<br>**----- End of picture text -----**<br>


## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Typical Forward Characteristics** 

## **Fig.2 Typical Reverse Characteristics** 

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**----- Start of picture text -----**<br>
1000<br>100<br>10<br>125 [o] C<br>25 [o] C<br>ff -40 [o] C<br>1<br>fff<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>INSTANTANEOUS FORWARD VOLTAGE (V)<br>INSTANTANEOUS FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


## **Fig.3 Admissible Power Dissipation Curve** 

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**----- Start of picture text -----**<br>
250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125<br>AMBIENT TEMPERATURE ( ° C)<br>POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br>


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1000<br>125°C<br>100<br>75 [o] C<br>10<br>1 aa 25 [o] C<br>0.1 ee<br>0.01<br>0 5 10 15 20 25 30<br>REVERSE VOLTAGE (V)<br>            Fig.4 Typical Junction Capacitance<br>14<br>12 P| | | | hr] dt<br>10 ee ee<br>8 A | | | | | ct<br>6 Vi | | | | lt<br>4 AN<br>2 | eee [AY] |<br>0 pt | | tT dt rt<br>0 4 8 12 16 20 24 28<br>REVERSE VOLTAGE (V)<br>REVERSE CURRENT (µA)<br>JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


3 Version: G2007 

**BAT54 / A / C / S** TT Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSION 

**SOT-23** 

## SUGGESTED PAD LAYOUT 

## PIN CONFIGURATION 

4 Version: G2007 

**BAT54 / A / C / S** Taiwan Semiconductor 

## SEMICONDUCTOR(i 

## **Notice** 

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. 

Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 

5 Version: G2007