BAT46

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## **BAT46** 

## SMALL SIGNAL SCHOTTKY DIODE 

## **DESCRIPTION** 

General purpose, metalto silicon diode featuring high breakdown voltage low turn-on voltage. 

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DO-35<br>**----- End of picture text -----**<br>


## **ABSOLUTE RATINGS** (limiting values) 

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Symbol Parameter Value Unit<br>VRRM Repetitive Peak Reverse Voltage 100 V<br>IF Forward Continuous Current* Ta = 25°C 150 mA<br>IFRM Repetitive Peak Forward Current* tp ≤ 1s 350 mA<br>δ ≤ 0.5<br>IFSM Surge non Repetitive Forward Current* tp = 10ms 750 mA<br>Ptot Power Dissipation* TI = 80°C 150 mW<br>Tstg Storage and Junction Temperature Range - 65 to + 150 °C<br>Tj - 65 to + 125<br>TL Maximum Temperature for Soldering during 10s at 4mm fromCase 230 °C<br>**----- End of picture text -----**<br>


## **THERMAL RESISTANCE** 

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Symbol Test Conditions Value Unit<br>Rth(j-a) Junction-ambient* 300 °C/W<br>**----- End of picture text -----**<br>


* On infinite heatsink with 4mm lead length. 

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October  2001 - Ed: 2B 

**BAT46** 

## **ELECTRICAL CHARACTERISTICS** 

## **STATIC CHARACTERISTICS** 

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Symbol Test Conditions Min. Typ. Max. Unit<br>VBR Tj = 25°C IR = 100µA 100 V<br>VF * Tj = 25°C IF = 0.1mA 0.25 V<br>Tj = 25°C IF = 10mA 0.45<br>Tj = 25°C IF = 250mA 1<br>IR * Tj = 25°C VR = 1.5V 0.5 µA<br>Tj = 60°C 5<br>Tj = 25°C VR = 10V 0.8<br>Tj = 60°C 7.5<br>Tj = 25°C VR = 50V 2<br>Tj = 60°C 15<br>Tj = 25°C VR = 75V 5<br>Tj = 60°C 20<br>**----- End of picture text -----**<br>


## **DYNAMIC CHARACTERISTICS** 

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Symbol Test Conditions Min. Typ. Max. Unit<br>C Tj = 25°C             VR = 0V f = 1Mhz 10 pF<br>Tj = 25°C             VR = 1V 6<br>**----- End of picture text -----**<br>


* Pulse test:  tp ≤ 300µs δ < 2% **.** 

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**BAT46** 

**Fig. 1-1:** Forward voltage drop versus forward current (low level, typical values) 

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IFM(mA)<br>20<br>18<br>16<br>14<br>Tj=125°C<br>12 Tj=25°C<br>10<br>8<br>6<br>4<br>2 VFM(V)<br>0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6<br>**----- End of picture text -----**<br>


**Fig. 2:** Leakage current versus reverse voltage applied (typical values) 

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IR(µA)<br>1E+3<br>Tj=125°C<br>Tj=100°C<br>1E+2<br>Tj=75°C<br>1E+1<br>Tj=50°C<br>1E+0 Tj=25°C<br>VR(V)<br>1E-1<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br>


**Fig. 1-2:** Forward voltage drop versus forward current (high level, typical values) 

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IFM(A)<br>5E-1<br>Tj=125°C<br>Tj=25°C<br>1E-1<br>VFM(V)<br>1E-2<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>**----- End of picture text -----**<br>


**Fig. 3:** Leakage current versus junction temperature (typical values) 

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IR(µA)<br>1E+3<br>VR=75V<br>1E+2<br>1E+1<br>1E+0<br>Tj(°C)<br>1E-1<br>0 25 50 75 100 125<br>**----- End of picture text -----**<br>


**Fig. 4:** Junction capacitance versus reverse voltage applied (typical values) 

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C(pF)<br>10<br>F=1MHz<br>Tj=25°C<br>5<br>2<br>VR(V)<br>1<br>1 10 100<br>**----- End of picture text -----**<br>


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**BAT46** 

## **PACKAGE MECHANICAL DATA** 

DO-35 

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REF. DIMENSIONS<br>C A C O/ B Millimeters Inches<br>Min. Max. Min. Max.<br>A 3.05 4.50 0.120 0.177<br>B 1.53 2.00 0.060 0.079<br>O/  D O/  D<br>C 28.00 1.102<br>D 0.458 0.558 0.018 0.022<br>**----- End of picture text -----**<br>


- I Cooling method: by convection and conduction 

- I Marking: clear, ring at cathode end 

- I Weight: 0.15g 

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© 2001 STMicroelectronics - Printed in Italy - All rights reserved. 

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