BAT43
Small Signal Schottky Diode, Single, 30 V, 200 mA, 1 V, 4 A, 125 °C
- Manufacturer: STMICROELECTRONICS
- Product type:
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Forward Surge Current; Available until stocks are exhausted
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: BAT43 Series
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: DO-204AH
- Diode Configuration: Single
- Forward Voltage Max: 1V
- Forward Surge Current: 4A
- Reverse Recovery Time: 5ns
- Average Forward Current: 200mA
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 30V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.019 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**==> picture [6 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> ## **BAT42 BAT43** ## SMALL SIGNAL SCHOTTKY DIODES ## **DESCRIPTION** General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic dis- **==> picture [221 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> DO-35<br>**----- End of picture text -----**<br> ## **ABSOLUTE RATINGS** (limiting values) **==> picture [461 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter Value Unit<br>VRRM Repetitive Peak Reverse Voltage 30 V<br>IF Forward Continuous Current Ta = 25°C 200 mA<br>IFRM Repetitive Peak Fordware Current tp ≤ 1s 500 mA<br>δ ≤ 0.5<br>IFSM Surge non Repetitive Forward Current* tp = 10ms 4 A<br>Ptot Power Dissipation* Tl = 65 °C 200 mW<br>Tstg Storage and Junction Temperature Range - 65 to +150 °C<br>Tj - 65 to +125 °C<br>TL Maximum Temperature for Soldering during 10s at 4mm fromCase 230 °C<br>THERMAL RESISTANCE<br>Symbol Test Conditions Value Unit<br>Rth(j-a) Junction-ambient* 300 °C/W<br>**----- End of picture text -----**<br> * On infinite heatsink with 4mm lead length October 2001 - Ed: 1C 1/4 **BAT42 / BAT43** ## **ELECTRICAL CHARACTERISTICS** ## **STATIC CHARACTERISTICS** |**Symbol**<br>ee|**Test Conditions**<br>rs|**Test Conditions**<br>rs|**Min.**<br>rs<br>tensGs<br>er|**Typ.**<br>rs<br>GsGe<br>tsGR|**Max.**<br>rs<br>Ge<br>GR|**Unit**<br>rs| |---|---|---|---|---|---|---| |VBR<br>ee<br>rt|Tj = 25°C<br>IR= 100µA<br>rs<br>rt<br>**e**s||30<br>rs<br>tensGs<br>rt<br>er<br>Ge|rs<br>GsGe<br>rt<br>tsGR<br>Gs|rs<br>Ge<br>rt<br>GR|V<br>rs<br>rt| |VF*<br>Po|Tj= 25°C<br>IF= 200mA<br>All Types<br>en<br>**e**s||er <br>en<br>Ge|tsGR<br>en<br>Gs|1<br>GR<br>en|V| ||Tj= 25°C<br>IF= 10mA<br>**e**s<br>e<br>a|BAT 42<br>s<br>ee|Ge<br>ee|Gs<br>ee<br>ee|0.4<br>ee<br>eee|| ||Tj= 25°C<br>IF= 50mA<br>**e**s<br>e<br>a||Ge<br>ee|Gs<br>ee<br>ee|0.65<br>ee<br>eee|| ||Tj= 25°C<br>IF= 2mA<br>**e**s<br>e<br>a<br>Po|BAT 43<br>s<br>ee<br>ee|0.26<br>Ge <br>ee<br>ee|Gs<br>ee<br>ee <br>ee<br>ee|0.33<br>ee<br> eee<br>ee<br>eee|| ||Tj= 25°C<br>IF= 15mA<br>Po||ee|ee<br>ee|0.45<br>ee<br>eee|| |IR*<br>Po<br>Po|Tj= 25°C<br>Po<br>Po|VR= 25V<br>ee<br>a|ee<br>a|ee<br>ee <br>eee|0.5<br>ee<br> eee<br>eee|µA| ||Tj= 100°ÉC<br>Po||a|eee|100<br>eee|| ## **DYNAMIC CHARACTERISTICS** |**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---| |C|Tj= 25°C VR= 1V<br>f = 1MHz||7||pF| |trr|Tj = 25°C IF= 10mA<br>IR= 10mA<br>irr= 1mA<br>RL= 100Ω|||5|ns| |h|Tj= 25°C RL= 15KΩ<br>CL= 300pF f = 45MHz Vi= 2V|80|||%| * Pulse test: tp ≤ 300µs δ < 2% **.** **Fig. 1:** Forward current versus forward voltage at different temperatures (typical values). **Fig. 2:** Forward current versus forward voltage (typical values). 2/4 ® ~~7]~~ **BAT42 / BAT43** **Fig. 3:** Reverse current versus junction temperature (typical values). **Fig. 4:** Reverse current versus continuous reverse voltage. **Fig. 5:** Capacitance C versus reverse applied voltage VR (typical values). **==> picture [24 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> ky ®<br>**----- End of picture text -----**<br> 3/4 **BAT42 / BAT43** ## **PACKAGE MECHANICAL DATA** DO-35 **==> picture [462 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> REF. DIMENSIONS<br>C A C O/ B Millimeters Inches<br>Min. Max. Min. Max.<br>A 3.05 4.50 0.120 0.177<br>O/ D O/ D B 1.53 2.00 0.060 0.079<br>C 28.00 1.102<br>D 0.458 0.558 0.018 0.022<br>**----- End of picture text -----**<br> Cooling method: by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. ## STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. **==> picture [24 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> **http://www.st.com** 4/4
Updated at April 29, 2026
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