BAS716,115

## _**DISCRETE SEMICONDUCTORS**_ 

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DATA SHEET<br>**----- End of picture text -----**<br>


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**BAS716** Low-leakage diode 

Product data sheet 

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2003 Nov 07 

**NXP Semiconductors** 

**Product data sheet** 

**BAS716** 

## **Low-leakage diode** 

## **FEATURES** 

- Plastic SMD package 

- Low leakage current: typ. 0.2 nA 

- Switching time: typ. 0.6 µs 

- Continuous reverse voltage: max. 75 V 

- Repetitive peak reverse voltage: max. 85 V 

- Repetitive peak forward current: max. 500 mA. 

## **APPLICATION** 

- Low leakage current applications in surface mounted circuits. 

## **DESCRIPTION** 

Epitaxial medium-speed switching diode with a low leakage current in an ultra small SOD523 (SC-79) SMD plastic package. 

## **PINNING** 

|**PINNING**|**PINNING**|**PINNING**|**PINNING**|**PINNING**|||
|---|---|---|---|---|---|---|
|**PIN**|||||**DESCRIPTION**||
|1|||||cathode||
|2|||||anode||
||||||||
||||||||
|_handbook, halfpage_**1**<br>||||**2**|||
||||||||
|Top view<br>_MAM408_|||||||
|Fig.1<br>Simplified outline (SOD523; SC-79) and<br>symbol.<br>**Marking code:**S1.<br>The marking bar indicates the cathode.|||||||



## **ORDERING INFORMATION** 

|**TYPE NUMBER**|**PACKAGE**|**PACKAGE**|**PACKAGE**|
|---|---|---|---|
||**NAME**|**DESCRIPTION**|**VERSION**|
|BAS716|−|plastic surface mountedpackage; 2 leads|SOD523|



## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VRRM|repetitivepeak reverse voltage||−|85|V|
|VR|continuous reverse voltage||−|75|V|
|IF|continuous forward current|see Fig.2; note 1|−|200|mA|
|IFRM|repetitivepeak forward current||−|500|mA|
|IFSM|non-repetitive peak forward current|square wave; Tj= 25°C prior to surge;<br>see Fig.4<br>tp= 1µs<br>tp= 1 ms<br>tp= 1 s|−<br>−<br>−|4<br>1<br>0.5|A<br>A<br>A|
|Ptot|totalpower dissipation|Tamb= 25°C; note 1|−|250|mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|



## **Note** 

1. Device mounted on a FR4 printed-circuit board. 

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NXP Semiconductors 

Product data sheet 

## Low-leakage diode 

## BAS716 

## **ELECTRICAL CHARACTERISTICS** 

Tj =  25 °C unless otherwise specified. 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**TYP.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VF|forward voltage|IF= 1 mA|0.77|0.9|V|
|||IF= 10 mA|0.85|1|V|
|||IF= 50 mA|0.92|1.1|V|
|||IF= 150 mA|1.02|1 .25|V|
|IR|reverse current|VR= 75 V|0.2|5|nA|
|||VR= 75 V; Tj= 150°C|3|80|nA|
|||VR= 100 V|0.3|−|nA|
|Cd|diode capacitance|VR= 0 V; f = 1 MHz; see Fig.6|2|−|pF|
|trr|reverse recovery time|when switched from IF= 10 mA to<br>IR= 10 mA; RL= 100Ω; measured at<br>IR= 1 mA|0.6|3|µs|



## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rthj-a|thermal resistance fromjunction to ambient|note 1|450|K/W|
|Rthj-s|thermal resistance fromjunction to soldering point|note 2|120|K/W|



## **Notes** 

1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions. 

2. Soldering point of the cathode tab. 

2003 Nov 07 

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NXP Semiconductors 

Product data sheet 

## Low-leakage diode 

## BAS716 

## **GRAPHICAL DATA** 

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MHC323 MLB752 - 1<br>300 300<br>handbook, halfpage handbook, halfpage<br>IF IF<br>(mA) (mA)<br>200 200<br>(1) (2) (3)<br>100 100<br>0 0<br>0 100 200 0 0.4 0.8 1.2 1.6<br>Tamb ( ° C) V    (V)F<br>(1) Tj = 150 °C; typical values.<br>Device mounted on a FR4 printed-circuit board.  (2) Tj = 25 °C; typical values.<br>(3) Tj = 25 °C; maximum values.<br>Fig.2 Maximum permissible continuous forward<br>current as a function of ambient  Fig.3 Forward current as a function of forward<br>temperature. voltage.<br>MBG704<br>10 [2]<br>handbook, full pagewidth<br>IFSM<br>(A)<br>10<br>1<br>10 [−] [1]<br>1 10 10 [2] 10 [3] 10 [4]<br>tp ( µ s)<br>Based on square wave currents; Tj = 25 °C prior to surge.<br>Fig.4  Maximum permissible non-repetitive peak forward current as a function of pulse duration.<br>**----- End of picture text -----**<br>


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Product data sheet 

## Low-leakage diode 

## BAS716 

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MDB826<br>10 [2]<br>handbook, halfpage<br>IR<br>(nA) (1)<br>10<br>(2)<br>1<br>10 [−] [1]<br>0 50 100 150 Tj ( ° C) 200<br>VR = 75 V.<br>(1) Maximum values.<br>(2) Typical values.<br>Fig.5 Reverse current as a function of junction<br>temperature.<br>**----- End of picture text -----**<br>


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MDB827<br>2.0<br>handbook, halfpage<br>Cd<br>(pF)<br>1.5<br>1.0<br>0.5<br>0<br>0 5 10 15 20<br>VR (V)<br>f = 1 MHz; Tj = 25 °C.<br>Fig.6 Diode capacitance as a function of reverse<br>voltage; typical values.<br>**----- End of picture text -----**<br>


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handbook, full pagewidth<br>tr t p<br>t<br>D.U.T. 10%<br>R   = 50SS Ω IF SAMPLING IF t rr t<br>OSCILLOSCOPE<br>V = V      I   x RRR F S R  = 50ii Ω<br>90% (1)<br>VR<br>MGA881<br>input signal output signal<br>(1) IR = 1 mA.R = 1 mA. = 1 mA.<br>Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;r = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;p = 100 ns; duty factor δ = 0.05; = 100 ns; duty factor δ = 0.05;δ = 0.05; = 0.05;<br>Oscilloscope: rise time tr = 0.35 ns.r = 0.35 ns. = 0.35 ns.<br>Fig.7  Reverse recovery voltage test circuit and waveforms.<br>**----- End of picture text -----**<br>


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handbook, full pagewidth<br>tr t p<br>t<br>D.U.T. 10%<br>R   = 50SS Ω IF SAMPLING IF t rr t<br>OSCILLOSCOPE<br>V = V      I   x RRR F S R  = 50ii Ω<br>90% (1)<br>VR<br>MGA881<br>input signal output signal<br>(1) IR = 1 mA.R = 1 mA. = 1 mA.<br>Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;r = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;p = 100 ns; duty factor δ = 0.05; = 100 ns; duty factor δ = 0.05;δ = 0.05; = 0.05;<br>Oscilloscope: rise time tr = 0.35 ns.r = 0.35 ns. = 0.35 ns.<br>Fig.7  Reverse recovery voltage test circuit and waveforms.<br>**----- End of picture text -----**<br>


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NXP Semiconductors 

Product data sheet 

BAS716 

## Low-leakage diode 

## **PACKAGE OUTLINE** 

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Plastic surface mounted package; 2 leads SOD523<br>A<br>c<br>HE v M A<br>D A<br>0 0.5 1 mm<br>scale<br>1 2<br>DIMENSIONS (mm are the original dimensions)<br>E bp<br>UNIT A bp c D E HE v<br>0.65 0.34 0.17 1.25 0.85 1.65<br>mm 0.1<br>(1) 0.58 0.26 0.11 1.15 0.75 1.55<br>Note<br>1. The marking bar indicates the cathode.<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  JEITA PROJECTION<br>98-11-25<br> SOD523 SC-79<br>02-12-13<br>**----- End of picture text -----**<br>


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NXP Semiconductors 

Product data sheet 

## Low-leakage diode 

## BAS716 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DOCUMENT**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITION**|
|Objective data sheet|Development|This document contains data from the objective specification for product<br>development.|
|Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.|
|Product data sheet|Production|This document contains theproduct specification.|



## **Notes** 

1. Please consult the most recently issued document before initiating or completing a design. 

2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 

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⎯ **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 

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**Quick reference data** ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

2003 Nov 07 

7 

## _**NXP Semiconductors**_ 

## **Customer notification** 

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. 

## **Contact information** 

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## © NXP B.V. 2009 

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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

Printed in The Netherlands 

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Date of release: 2003 Nov 07 

R76/01/pp8 

Document order number: 9397 750 11999