BAS31

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## **Is Now** 

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**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

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BAS31<br>Small Signal Diode<br>Connection Diagram<br>3<br>3 3<br>L21<br>2<br>e 1 S 1 2 1 2<br>SOT-23<br>**----- End of picture text -----**<br>


## **Ordering Information** 

**Part Number Top Mark Package Packing Method** BAS31 L21 SOT-23 3L Tape and Reel, 7 inch Reel, 3000 pcs BAS31-D87Z L21 SOT-23 3L Tape and Reel, 13 inch Reel, 10000 pcs ~~—————~~ 

## **Absolute Maximum Ratings**[(1), (2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VRRM|Maximum Repetitive Reverse Voltage||120|V|
|IF(AV)|Average Rectified Forward Current||200|mA|
|IFSM|Non-Repetitive Peak Forward<br>Surge Current|Pulse Width = 1.0 second|1.0|A|
|||Pulse Width = 1.0 microsecond|2.0||
|TSTG|Storage Temperature Range||-55 to +150|°C|
|TJ|Operating Junction Temperature||150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. 

Publication Order Number: BAS31/D 

© 2001 Semiconductor Components Industries, LLC. August-2017, Rev. 2 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|Values are at|TA= 25°C unless otherwise noted.|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|PD|Power Dissipation|350|mW|
|RθJA|Thermal Resistance, Junction-to-Ambient|357|°C/W|
|||||



## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|Values are at|TA= 25°C unless otherwise noted.|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**|
|VR|Breakdown Voltage|IR= 1.0 mA|120||V|
|VF|Forward Voltage|IF= 10 mA||750|mV|
|||IF= 50 mA||840|mV|
|||IF= 100 mA||900|mV|
|||IF= 200 mA||1.00|V|
|||IF= 400 mA||1.25|V|
|IR|Reverse Current|VR= 90 V||100|nA|
|||VR= 90 V, TA= 150°C||100|μA|
|CT|Total Capacitance|VR= 0, f = 1.0 MHz||35|pF|
|trr|Reverse Recovery Time|IF= IR= 30 mA, IRR= 3.0 mA,<br>RL= 100Ω||50|ns|



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## **Typical Performance Characteristics** 

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325<br>Ta= 25°C<br>300<br>275<br>3 5 10 20 30 50 100<br>I   - REVERSE CURRENT  (uA)R<br>RR<br>VV    - REVERSE VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Voltage vs. Reverse Current BV - 1.0 to 100** μ **A** 

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50 Ta= 25°C<br>40<br>30<br>20<br>10<br>0<br>55 75 95 115 135 155 175 195<br>V    - REVERSE VOLTAGE (V)R<br>GENERAL RULE: The Reverse Current of a diode will approximately<br>double for every ten (10) Degree C increase in Temperature<br>I    - REVERSE CURRENT (nA)R<br>**----- End of picture text -----**<br>


**Figure 2. Reverse Current vs. Reverse Voltage IR - 55 to 205 V** 

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100<br>Ta= 25°C<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>180 200 220 240 255<br>V    - REVERSE VOLTAGE (V)R<br>GENERAL RULE: The Reverse Current of a diode will approximately<br>double for every ten Degree C increase in Temperature<br>II    - REVERSE CURRENT (nA)RR<br>**----- End of picture text -----**<br>


**Figure 3. Reverse Current vs. Reverse Voltage IR - 180 to 255 V** 

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Ta= 25°C<br>450<br>400<br>350<br>300<br>250<br>1 2 3 5 10 20 30 50 100<br>I   - FORWARD CURRENT  (uA)F<br>FF<br>VV    - FORWARD VOLTAGE (mV)<br>**----- End of picture text -----**<br>


**Figure 4. Forward Voltage vs. Forward Current VF - 1.0 to 100** μ **A** 

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725<br>700 Ta= 25°C 1.4 Ta= 25 ° C<br>1.3<br>650<br>1.2<br>600 1.1<br>1<br>550<br>0.9<br>500<br>0.8<br>450 0.7<br>0.1 0.2 0.3 0.5 1 2 3 5 10 10 20 30 50 100 200 300 500 800<br>I   - FORWARD CURRENT  (mA)F I   - FORWARD CURRENT  (mA)F<br>F F<br>VV    - FORWARD VOLTAGE (mV)F VV    - FORWARD VOLTAGE (mV)F<br>**----- End of picture text -----**<br>


**Figure 5. Forward Voltage vs. Forward Current VF - 0.1 to 10 mA** 

**Figure 6. Forward Voltage vs. Forward Current VF - 10 to 800 mA** 

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## **Typical Performance Characteristics** (Continued) 

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1.3<br>Ta= 25°C<br>800<br>Ta= -40°C 1.2<br>600 Ta= 25°C 1.1<br>1<br>400<br>Ta= +80°C<br>0.9<br>200<br>0.8<br>0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 0 2 4 6 8 10 12 14 15<br>I   - FORWARD CURRENT  (mA)F REVERSE VOLTAGE (V)<br>Figure 7. Forward Voltage vs. Ambient Temperature Figure 8. Capacitance vs. Reverse Voltage<br>VF -  1.0 F -  1.0  -  1.0  μ A - 10 mA (- 40 to +80 ° C)<br>50 500<br>400<br>40<br>300<br>200<br>30<br>100<br>  IF = IR = 30 mA<br>Rloop = 100 Ohms<br>20 0<br>1 1.5 2 2.5 3 0 50 100 150<br>Irr - REVERSE RECOVERY CURRENT (mA) T  - AMBIENT TEMPERATURE  (   C) A o<br>Figure 9. Reverse Recovery Time vs. Figure 10. Average Rectified Current(IO) andO) and) and<br>Reverse Recovery Current (Irr) Forward Current (IF) vs. Ambient Temperature(TAF) vs. Ambient Temperature(TA) vs. Ambient Temperature(TAA)<br>500<br>400<br>300<br>SOT-23 Pkg<br>200<br>100<br>0<br>0 50 100 150 200<br>I   - AVERAGE TEMPERATURE  (  C)O o<br>Figure 11. Power Derating Curve<br>Io - AVERAGE RECTIFIED CURRENT - mA<br>I    - FORWARD CURRENT STEADY STATE - mAR<br>D<br>F<br>CAPACITANCE (pF)<br>F<br>VV    - FORWARD VOLTAGE (mV)<br>I - CURRENT (mA)<br>REVERSE RECOVERY (nS)<br>P   - POWER DISSIPATION (mW)<br>**----- End of picture text -----**<br>


- **Figure 7. Forward Voltage vs. Ambient Temperature VF -  1.0 F -  1.0  -  1.0** μ **A - 10 mA (- 40 to +80** ° **C)** 

**Figure 10. Average Rectified Current(IO) andO) and) and Forward Current (IF) vs. Ambient Temperature(TAF) vs. Ambient Temperature(TA) vs. Ambient Temperature(TAA)** 

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## **Physical Dimensions** 

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0.95<br>2.92±0.20<br>3<br>1.40<br>1.30 [+0.20] 2.20<br>-0.15<br>1 2<br>(0.29) 0.60<br>0.37<br>0.95<br>0.20 A B 1.00<br>1.90 1.90<br>LAND PATTERN<br>RECOMMENDATION<br>1.20 MAX SEE DETAIL A<br>(0.93) 0.10<br>0.00<br>0.10 C<br>C<br>2.40±0.30<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE PLANE<br>A) REFERENCE JEDEC REGISTRATION<br>TO-236, VARIATION AB, ISSUE H.<br>0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS,<br>0.25   MOLD FLASH AND TIE BAR EXTRUSIONS.<br>D) DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M - 1994.<br>0.20 MIN SEATING    E) DRAWING FILE NAME: MA03DREV10<br>(0.55) PLANE<br>SCALE: 2X<br>**----- End of picture text -----**<br>


**Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE** 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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