BAS21WS-TP

**BAS21WS** 

**200mW High Voltage Switching Diode** 

|**Parameter**<br>~~re~~|**Rating**|
|---|---|
|VBR<br>~~re~~|250 V|
|trrMax<br>~~re~~|50 ns|
|IRMax@VF= 200 V|0.1µA|



## **Features** 

## **SOD-323** 

- For Surface Mount Application 

## **Mechanical Data** 

- Package: SOD-323 package name 

- Moisture Sensitivity: Level 1, per J-STD-020 

- Halogen Free. “Green” Device[ (Note1)] 

- Epoxy Meets UL 94 V-0 Flammability Rating 

- Lead Free Finish & RoHS Compliant 

- Weight: 0.004 g (approximate) 

## **Body Marking and Pin Layout** 

**Body Marking XX** : Device Marking Code[1] **Bar** : Cathode Pin indicator **Dot** (optional): Manufacturing Site Marking 1 | Refer to the ordering information for the specific device code. 

**Internal structure** 

## **Ordering Information** 

|**Ordering Information**||||||
|---|---|---|---|---|---|
|**Ordering Part Number**<br>Product Name-TP<br>Product Name-13P|**Device Marking Code**|**Reel Size**|**Packing Type**|**Qty/Reel**|**Pin 1 Orientation**|
||JS|7”|Tape & Reel|3,000|Q1Q2|
||JS|13”|Tape & Reel|10,000|Q1Q2|



1                                                                                                                                  MCCSEMI.COM 1/5 

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**BAS21WS** 

## **200mW High Voltage Switching Diode** 

## **Maximum Ratings (TA=25** ℃ **unless otherwise specified)** 

|**Parameter**|**Parameter**|**Symbol**|**Rating**|**Unit**|
|---|---|---|---|---|
|Peak Repetitive Reverse Voltage||VRRM|250|V|
|RMS Reverse Voltage||VR(RMS)|177|V|
|Reverse Voltage||VR|250|V|
|Forward current||IF|200|mA|
|Non-Repetitive Peak Surge Current|tp= 8.3ms Half Sine Wave, TJ= 25℃|IFSM|625|mA|
|Power Dissipation<br>(Note 2)||PD|200|mW|
|Operating Junction Temperature Range||TJ|-55 to +150|℃|
|Storage Temperature Range||TSTG|-55 to +150|℃|



Note: 

1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. Device mounted on an FR4 Printed-Circuit Board (PCB) with the recommended pad layout. 

## **Thermal characteristics (TA=25** ℃ **unless otherwise specified)** 

|**Parameter**|**Symbol**|**Rating**|**Unit**|
|---|---|---|---|
|Thermal Resistance from Junction to Ambient<br>(Note 2)|RθJA|625|℃/W|



## **Electrical Characteristics (TA=25** ℃ **unless otherwise specified)** 

|**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|Reverse Breakdown Voltage|IR=100 μA (pulse test)|VBR|250|||V|
|Forward Voltage|IF= 100 mA|VF|||1|V|
||IF= 200 mA||||1.25||
|Reverse Current|VR= 200 V|IR|||0.1|µA|
||VR= 200 V,TJ=150℃||||100||
|Junction Capacitance|VR=0 V, f=1.0MHz|CJ|||5|pF|
|Reverse Recovery Time|IF=30mA, IR=30mA, Irr=0.1 x IR,<br>RL=100Ω|trr|||50|ns|



2                                                                                                                                  MCCSEMI.COM 2/5 

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**BAS21WS** 

**200mW High Voltage Switching Diode** 

## **Curve Characteristics** 

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**----- Start of picture text -----**<br>
Fig.1 - Typical Instantaneous Forward Characteristics<br>(per diode)<br>1000<br>TJ=150 ℃<br>100 ℃<br>75 ℃<br>25 ℃<br>100 -55 ℃<br>10<br>1<br>0.1<br>0 0.5 1 1.5 2<br>Forward Voltage (V)<br>Forward Current(mA)<br>**----- End of picture text -----**<br>


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Fig.3 - Typical Capacitance Characteristics<br>(per diode)<br>0.6<br>TJ=25 ℃<br>0.5 f=1MHz<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0 5 10 15 20 25 30<br>Reverse Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig.2 - Typical Reverse Leakage Characteristics<br>(per diode)<br>100<br>Tj=150 ℃<br>10<br>Tj=100 ℃<br>1<br>Tj=75 ℃<br>0.1<br>Tj=25 ℃<br>0.01<br>0.001<br>0 50 100 150 200 250<br>Reverse Voltage (V)<br>Reverse Current (uA)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig.4 - Power Derating Curve<br>250<br>200<br>150<br>100<br>50<br>0<br>0 25 50 75 100 125 150<br>Ambient Temperature ( ℃ )<br>Power Dissipation (mW)<br>**----- End of picture text -----**<br>


3                                                                                                                                  MCCSEMI.COM 3/5 

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**SOD-323** 

Rev.A 

## Package Outline 

|DIM|INCH|INCH|MM|MM|NOTE|
|---|---|---|---|---|---|
||MIN|MAX|MIN|MAX||
|A|0.031|0.045|0.80|1.15*|Note 1|
|A1|0.000|0.006|0.00|0.15||
|b|0.010|0.016|0.25|0.40||
|c|0.003|0.010|0.08|0.25||
|D|0.090|0.107|2.30|2.70||
|D1|0.063|0.071|1.60|1.80||
|E|0.045|0.055|1.15|1.40||
|L1|0.004|0.018|0.10|0.45||



**==> picture [470 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIM NOTE<br>MIN MAX MIN MAX<br>A 0.031 0.045 0.80 1.15* Note 1<br>A1 0.000 0.006 0.00 0.15<br>b 0.010 0.016 0.25 0.40<br>L1<br>c 0.003 0.010 0.08 0.25<br>D 0.090 0.107 2.30 2.70<br>D<br>D1 0.063 0.071 1.60 1.80<br>D1 E 0.045 0.055 1.15 1.40<br>L1 0.004 0.018 0.10 0.45<br>Notes:<br>1. Dimension A for products from manufacturing site VN is<br>controlled at max 1.10 mm.<br>A<br>c A1<br>E b<br>**----- End of picture text -----**<br>


## Suggested Pad Layout (Unit:mm) 

**==> picture [142 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.88<br>0.56<br>0.69<br>**----- End of picture text -----**<br>


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## Notes: 

1. The suggested land pattern dimensions have been provided for reference only. 

2. For further information, please refer to document IPC-7351A . 

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MCCSEMI.COM 

5/5 

Rev-5.1-03212026