BAS21J,115

## **Important notice** 

Dear Customer, 

On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets 

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. 

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** 

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) 

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: 

- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved 

Should be replaced with: 

- **© Nexperia B.V. (year). All rights reserved** . 

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, 

Kind regards, 

Team Nexperia 

**==> picture [97 x 65] intentionally omitted <==**

## **BAS21J** 

## **Single high-speed switching diode** 

**Rev. 01 — 8 March 2007** 

**Product data sheet** 

## **1.** 

## **1.1 General description** 

Single high-speed switching diode, encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 

## **1.2 Features** 

- I High switching speed: trr ≤ 50 ns 

- I Low leakage current 

- I Repetitive peak reverse voltage: VRRM ≤ 300 V 

   - I Low capacitance: Cd ≤ 2 pF 

   - I Reverse voltage: VR ≤ 300 V 

   - I package 

- I Excellent coplanarity and improved thermal behavior 

## **1.3 Applications** 

- I High-speed switching 

- I General-purpose switching 

- I Voltage clamping 

- I Reverse polarity protection 

## **1.4 Quick reference data** 

**Table 1. Quick reference data** 

|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|IF|forward current||[1] -|-|250|mA|
|IR|reverse current|VR= 250 V|-|-|150|nA|
|VR|reverse voltage||-|-|300|V|
|trr|reverse recovery time||[2] -|-|50|ns|



- [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

- [2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. 

**==> picture [211 x 101] intentionally omitted <==**

**BAS21J** 

**NXP Semiconductors** 

**Single high-speed switching diode** 

## **2. Pinning information** 

|**Table**|**2.**|**Pinning**||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|**Pin**||**Description**||**Simplifed outline**||||||**Symbol**||
|1||cathode|[1]|||||||||
|2||anode|||1|||2||||
|||||||||||||
|||||||||||sym006||



[1] The marking bar indicates the cathode. 

## **3. Ordering information** 

|**formation**|**formation**|**formation**|**formation**|
|---|---|---|---|
|**Table 3.**<br>**Ordering information**||||
|**Type number**|**Package**|||
||**Name**|**Description**|**Version**|
|BAS21J|SC-90<br>plastic surface-mounted package; 2 leads<br>SOD323F|||



## **4. Marking** 

|**Table 4.**|**Marking codes**||
|---|---|---|
|**Type number**||**Marking code**|
|BAS21J||AN|



© NXP B.V. 2007. All rights reserved. 

BAS21J_1 

**Product data sheet** 

**Rev. 01 — 8 March 2007** 

**2 of 10** 

**BAS21J** 

**NXP Semiconductors** 

**Single high-speed switching diode** 

## **5. Limiting values** 

## **Table 5. Limiting values** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**|
|---|---|
|VRRM<br>repetitive peak reverse<br>voltage|-<br>300<br>V|
|VR<br>reverse voltage|-<br>300<br>V|
|IF<br>forward current|[1] -<br>250<br>mA|
|IFRM<br>repetitive peak forward<br>current|tp≤0.5 ms;<br>δ ≤0.25<br>-<br>1<br>A|
|IFSM<br>non-repetitive peak forward<br>current|square wave<br>[2]|
||tp= 100µs<br>-<br>3<br>A|
||tp= 1 ms<br>-<br>2.3<br>A|
||tp= 10 ms<br>-<br>1.7<br>A|
|Ptot<br>total power dissipation|Tamb≤25°C<br>[3]<br>[4] -<br>550<br>mW|
|Tj<br>junction temperature|-<br>150<br>°C|
|Tamb<br>ambient temperature|−65<br>+150<br>°C|
|Tstg<br>storage temperature|−65<br>+150<br>°C|



- [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

- [2] Tj = 25 °C prior to surge. 

[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm[2] . 

- [4] 

## **6. Thermal characteristics** 

**Table 6. Thermal characteristics** 

|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|Rth(j-a)|thermal resistance from|in free air|[1]<br>[2] -||-|230|K/W|
||junction to ambient|||||||
|Rth(j-sp)|thermal resistance from|||[3] -|-|55|K/W|
||junction to solder point|||||||



- [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm[2] . 

- [2] 

- [3] Soldering point of cathode tab. 

© NXP B.V. 2007. All rights reserved. 

BAS21J_1 

**Product data sheet** 

**Rev. 01 — 8 March 2007** 

**3 of 10** 

**BAS21J** 

**NXP Semiconductors** 

**Single high-speed switching diode** 

## **7. Characteristics** 

## **Table 7. Characteristics** 

## Tamb = 25 ° 

|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|---|
|VF<br>forward voltage|IF= 100 mA<br>[1] -<br>-<br>1.1<br>V|
|IR<br>reverse current|VR= 250 V<br>-<br>-<br>150<br>nA|
||VR= 250 V; Tj= 150°C<br>-<br>-<br>50<br>µA|
|Cd<br>diode capacitance|VR= 0 V; f = 1 MHz<br>-<br>-<br>2<br>pF|
|trr<br>reverse recovery time|[2] -<br>-<br>50<br>ns|



[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 

[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. 

© NXP B.V. 2007. All rights reserved. 

BAS21J_1 

**Product data sheet** 

**Rev. 01 — 8 March 2007** 

**4 of 10** 

**BAS21J** 

**NXP Semiconductors** 

**Single high-speed switching diode** 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
mhc618<br>500<br>IF<br>(mA)<br>400<br>300<br>200<br>(1) (2) (3)<br>100<br>0<br>0 0.5 1 1.5<br>VF (V)<br>**----- End of picture text -----**<br>


- (1) Tamb = 150 °C 

- (2) Tamb = 75 °C 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
mbg703<br>10 [2]<br>IFSM<br>(A)<br>10<br>1<br>10 [−][1]<br>1 10 10 [2] 10 [3] 10 [4]<br>tp (µs)<br>**----- End of picture text -----**<br>


Based on square wave currents. Tj = 25 °C; prior to surge 

- (3) Tamb = 25 °C 

**Fig 1. Forward current as a function of forward voltage; typical values** 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
mhc619<br>10 [2]<br>IR<br>(µA)<br>10<br>1<br>10 [−][1]<br>10 [−][2]<br>0 40 80 120 160 200<br>Tj (°C)<br>**----- End of picture text -----**<br>


VR = 250 V 

**Fig 3. Reverse current as a function of junction temperature; typical values** 

**Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values** 

**==> picture [233 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
mhc621<br>0.42<br>Cd<br>(pF)<br>0.38<br>0.34<br>0.3<br>0 10 20 30 40<br>VR (V)<br>**----- End of picture text -----**<br>


f = 1 MHz; Tamb = 25 °C 

**Fig 4. Diode capacitance as a function of reverse voltage; typical values** 

© NXP B.V. 2007. All rights reserved. 

BAS21J_1 **Product data sheet** 

**Rev. 01 — 8 March 2007** 

**5 of 10** 

**BAS21J** 

**NXP Semiconductors** 

**Single high-speed switching diode** 

## **8. Test information** 

**==> picture [453 x 99] intentionally omitted <==**

**----- Start of picture text -----**<br>
tr tp<br>t<br>D.U.T.<br>10 %<br>RS = 50 Ω IF SAMPLING + IF trr t<br>OSCILLOSCOPE<br>V = VR + IF × RS Ri  = 50 Ω<br>90 % (1)<br>VR<br>mga881<br>input signal output signal<br>**----- End of picture text -----**<br>


- (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns 

**Fig 5. Reverse recovery time test circuit and waveforms** 

© NXP B.V. 2007. All rights reserved. 

BAS21J_1 **Product data sheet** 

**Rev. 01 — 8 March 2007** 

**6 of 10** 

**BAS21J** 

**NXP Semiconductors** 

**Single high-speed switching diode** 

## **9. Package outline** 

**==> picture [237 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.35 0.80<br>1.15 0.65<br>0.5<br>1<br>0.3<br>2.7 1.8<br>2.3 1.6<br>2<br>0.40 0.25<br>0.25 0.10<br>Dimensions in mm 04-09-13<br>**----- End of picture text -----**<br>


**Fig 6. Package outline SOD323F (SC-90)** 

## **10. Packing information** 

**Table 8. Packing methods** The indicated -xxx are the last three digits of the 12NC ordering code ~~.~~ [1] 

|**Type number**<br>**Package**<br>**Description**|**Packing quantity**|**Packing quantity**|
|---|---|---|
||**3000**|**10000**|
|BAS21J<br>SOD323F<br>4 mm pitch, 8 mm tape and reel|-115<br>-135||
|[1]<br>For further information and the availability of packing methods, see<br>Section|14.||



## **11. Soldering** 

**==> picture [304 x 124] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.05<br>2.80<br>2.10<br>1.60<br>solder lands<br>solder resist<br>1.65 0.95 0.50 0.60<br>occupied area<br>solder paste<br>0.50<br>001aab169<br>(2×)<br>**----- End of picture text -----**<br>


Dimensions in mm 

**Fig 7.** 

© NXP B.V. 2007. All rights reserved. 

BAS21J_1 **Product data sheet** 

**Rev. 01 — 8 March 2007** 

**7 of 10** 

**BAS21J** 

**NXP Semiconductors** 

**Single high-speed switching diode** 

## **12. Revision history** 

|**Table 9.**|**Revision**|**history**||||
|---|---|---|---|---|---|
|**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**|
|BAS21J_1||20070308|Product data sheet|-|-|



© NXP B.V. 2007. All rights reserved. 

BAS21J_1 

**Product data sheet** 

**Rev. 01 — 8 March 2007** 

**8 of 10** 

**BAS21J** 

**NXP Semiconductors** 

**Single high-speed switching diode** 

## **13. Legal information** 

## **13.1 Data sheet status** 

|**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**|
|---|---|
|Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.||
|Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.||
|Product [short] data sheet<br>Production<br>This document contains the product specifcation.||



[1] Please consult the most recently issued document before initiating or completing a design. 

[2] 

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 

## **13.2** 

**Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 

**Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 

## **13.3 Disclaimers** 

**General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 

**Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 

**Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 

malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

**Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

**Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 

**No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

## **13.4 Trademarks** 

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 

## **14. Contact information** 

For additional information, please visit: **http://www.nxp.com** 

**salesaddresses@nxp.com** 

© NXP B.V. 2007. All rights reserved. 

BAS21J_1 

**Product data sheet** 

**Rev. 01 — 8 March 2007** 

**9 of 10** 

**BAS21J** 

**NXP Semiconductors** 

**Single high-speed switching diode** 

## **15. Contents** 

|**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . .  1**|
|---|---|
|1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1|
|1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.3|Applications  . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . .  2**|
|**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . .  2**|
|**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  2**|
|**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  3**|
|**6**|**Thermal characteristics. . . . . . . . . . . . . . . . . . .  3**|
|**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  4**|
|**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . .  6**|
|**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  7**|
|**10**|**Packing information. . . . . . . . . . . . . . . . . . . . . .  7**|
|**11**|**Soldering  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  7**|
|**12**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . .  8**|
|**13**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . .  9**|
|13.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9|
|13.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|13.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|13.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|**14**|**Contact information. . . . . . . . . . . . . . . . . . . . . .  9**|
|**15**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  10**|



**==> picture [151 x 121] intentionally omitted <==**

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 

**© NXP B.V. 2007.** 

**All rights reserved.** 

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 8 March 2007 Document identifier: BAS21J_1**