Image not available
Illustrative purposes only
BAS21AW,115
Small Signal Diode, Dual Common Anode, 225 mA, 1.25 V, 50 ns, 9 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NEXPERIA
- Product type: Small Signal Diodes
- Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:-; Forward Current If(AV):225mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:50ns; Forward Su
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: BAS21
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOT-323
- Diode Configuration: Dual Common Anode
- Forward Voltage Max: 1.25V
- Forward Surge Current: 9A
- Reverse Recovery Time: 50ns
- Average Forward Current: 225mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: -
| Delivery and price | |
|---|---|
| Units per pack | 9000 |
| Price | 0.043 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [49 x 51] intentionally omitted <==** ## **BAS21W series** ## **High-voltage switching diodes** **Rev. 01 — 9 October 2009** ## **Product data sheet** ## **1.** ## **1.1 General description** High-voltage switching diodes, encapsulated in a very small Surface-Mounted Device (SMD) plastic package. ## **Table 1. Product overview** |**Type number**|**Confguration**|**Package**|**Package**|**Package**<br>**confguration**| |---|---|---|---|---| |||**NXP**|**JEDEC**|| |BAS21W<br>single||SOT323<br>SC-70<br>very small||| |BAS21AW<br>dual common anode||||| |BAS21SW<br>dual series||||| ## **1.2 Features** I High switching speed: trr ≤ 50 ns I Low capacitance: Cd ≤ 2 pF I Low leakage current I Very small SMD plastic package I High reverse voltage: VR ≤ 250 V I AEC-Q101 qualified ## **1.3 Applications** I High-speed switching I Voltage clamping I General-purpose switching I Reverse polarity protection ## **1.4 Quick reference data** ## **Table 2. Quick reference data** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**Per diode**|||||||| |IF|forward current||[1]|-|-|225|mA| |IR|reverse current|VR= 200 V||-|-|100|nA| |VR|reverse voltage|||-|-|250|V| |trr|reverse recovery time||[2]|-|-|50|ns| - [1] Single diode loaded. - [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. **==> picture [211 x 101] intentionally omitted <==** **BAS21W series** **NXP Semiconductors** **High-voltage switching diodes** ## **2. Pinning information** |**ormation**|**ormation**|**ormation**|**ormation**|**ormation**|**ormation**|**ormation**|**ormation**| |---|---|---|---|---|---|---|---| |**Table 3.**<br>**Pinning**|||||||| |**Pin**<br>**Description**<br>**Simplifed outline**<br>**Graphic symbol**|||||||| |**BAS21W**|||||||| |1<br>anode<br>2<br>not connected<br>3<br>cathode|||2<br>3<br>006aaa764<br>3<br>1<br>2||||| ||||||3||| ||||||||| ||||||||| ||1||||||2| ||||||||| ||||||||| |**BAS21AW**|||||||| |1<br>cathode (diode 1)<br>2<br>cathode (diode 2)<br>3<br>common anode|||2<br>3<br>006aab099<br>1<br>2<br>3||||| ||||||||| ||1||||||| ||||||||| |**BAS21SW**|||||||| |1<br>anode (diode 1)<br>2<br>cathode (diode 2)<br>3<br>cathode (diode 1),<br>anode (diode 2)|||2<br>3<br>006aaa763<br>1<br>2<br>3||||| ||||||3||| ||||||||| ||||||||| ||1||||||2| ||||||||| ||||||||| ## **3. Ordering information** **Table 4. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |BAS21W|SC-70<br>plastic surface-mounted package; 3 leads<br>SOT323||| |BAS21AW|||| |BAS21SW|||| © NXP B.V. 2009. All rights reserved. BAS21W_SER_1 **Rev. 01 — 9 October 2009** **Product data sheet** **2 of 11** **BAS21W series** **NXP Semiconductors** **High-voltage switching diodes** ## **4. Marking** ## **Table 5. Marking codes** |**Type number**|**Marking**|**cod**~~**e**~~<br>**[1]**| |---|---|---| |BAS21W|X4*|| |BAS21AW|X6*|| |BAS21SW|X5*|| - [1] * = -: made in Hong Kong - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China ## **5. Limiting values** ## **Table 6. Limiting values** In accordance with the Absolute Maximum Rating System (IEC 60134). |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |---|---| |**Per diode**|| |VR<br>reverse voltage|-<br>250<br>V| |IF<br>forward current|[1] -<br>225<br>mA<br>[2] -<br>125<br>mA| |IFRM<br>repetitive peak forward<br>current|-<br>625<br>mA| |IFSM<br>non-repetitive peak forward<br>current|square wave<br>[3]| ||tp= 1µs<br>-<br>9<br>A| ||tp= 100µs<br>-<br>3<br>A| ||tp= 10 ms<br>-<br>1.7<br>A| |**Per device**|| |Ptot<br>total power dissipation|Tamb≤25°C<br>[4] -<br>200<br>mW| |Tj<br>junction temperature|-<br>150<br>°C| |Tamb<br>ambient temperature|−55<br>+150<br>°C| |Tstg<br>storage temperature|−65<br>+150<br>°C| - [1] Single diode loaded. - [2] Double diode loaded. - [3] Tj = 25 °C prior to surge. - [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. © NXP B.V. 2009. All rights reserved. BAS21W_SER_1 **Rev. 01 — 9 October 2009** **Product data sheet** **3 of 11** **BAS21W series** **NXP Semiconductors** **High-voltage switching diodes** ## **6. Thermal characteristics** ## **Table 7. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**Per device**|||||||| |Rth(j-a)|thermal resistance from|in free air|[1]|-|-|625|K/W| ||junction to ambient||||||| |Rth(j-sp)|thermal resistance from|||-|-|300|K/W| ||junction to solder point||||||| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ## **7. Characteristics** ## **Table 8. Characteristics** ## Tamb = 25 ° |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |**Per diode**|| |VF<br>forward voltage|IF= 100 mA<br>-<br>-<br>1.0<br>V| ||IF= 200 mA<br>-<br>-<br>1.25<br>V| |IR<br>reverse current|VR= 200 V<br>-<br>-<br>100<br>nA| ||VR= 200 V; Tj= 150°C<br>-<br>-<br>100<br>µA| |Cd<br>diode capacitance|f = 1 MHz; VR= 0 V<br>-<br>-<br>2<br>pF| |trr<br>reverse recovery time|[1] -<br>-<br>50<br>ns| [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. © NXP B.V. 2009. All rights reserved. BAS21W_SER_1 **Rev. 01 — 9 October 2009** **Product data sheet** **4 of 11** **BAS21W series** **NXP Semiconductors** **High-voltage switching diodes** **==> picture [481 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab212 mbg703<br>600 10 [2]<br>IF IFSM<br>(mA) (A)<br>400 10<br>200 (2) 1<br>(1) (3)<br>(4)<br>0 10 [−][1]<br>0 0.4 0.8 1.2 1.6 1 10 10 [2] 10 [3] 10 [4]<br>VF (V) tp (µs)<br>(1) Tamb = 150 °C Based on square wave currents.<br>(2) Tamb = 85 °C Tj = 25 °C; prior to surge<br>**----- End of picture text -----**<br> - (3) Tamb = 25 °C - (4) Tamb = −40 °C **Fig 1. Forward current as a function of forward Fig 2. Non-repetitive peak forward current as a voltage; typical values function of pulse duration; maximum values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab213<br>10 [2]<br>IR (1)<br>(µA)<br>10<br>(2)<br>1<br>10 [−][1]<br>(3)<br>10 [−][2]<br>10 [−][3]<br>10 [−][4] (4)<br>10 [−][5]<br>0 50 100 150 200 250<br>VR (V)<br>**----- End of picture text -----**<br> - (1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C **Fig 3. Reverse current as a function of reverse voltage; typical values** © NXP B.V. 2009. All rights reserved. BAS21W_SER_1 **Rev. 01 — 9 October 2009** **Product data sheet** **5 of 11** **BAS21W series** **NXP Semiconductors** ## **High-voltage switching diodes** **==> picture [497 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> mbg447 006aab214<br>1.0 300<br>Cd<br>(pF) IF<br>(mA) (1)<br>0.8<br>200<br>0.6<br>(2)<br>100<br>0.4<br>0.2 0<br>0 2 4 6 8 0 50 100 150 200<br>VR (V) Tamb (°C)<br>f = 1 MHz; Tamb = 25 °C FR4 PCB, standard footprint<br>(1) Single diode loaded.<br>(2) Double diode loaded.<br>Fig 4. Diode capacitance as a function of reverse Fig 5. Forward current as a function of ambient<br>voltage; typical values temperature; derating curve<br>**----- End of picture text -----**<br> ## **8. Test information** **==> picture [469 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> tr tp<br>t<br>D.U.T.<br>10 %<br>RS = 50 Ω IF SAMPLING + IF trr t<br>OSCILLOSCOPE<br>V = VR + IF × RS Ri = 50 Ω<br>90 % (1)<br>VR<br>mga881<br>input signal output signal<br>(1) IR = 1 mA<br>Fig 6. Reverse recovery time test circuit and waveforms<br>**----- End of picture text -----**<br> ## **8.1 Quality information** (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. © NXP B.V. 2009. All rights reserved. BAS21W_SER_1 **Product data sheet** **Rev. 01 — 9 October 2009** **6 of 11** **BAS21W series** **NXP Semiconductors** **High-voltage switching diodes** ## **9. Package outline** **==> picture [237 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2 1.1<br>1.8 0.8<br>3 0.45<br>0.15<br>2.2 1.35<br>2.0 1.15<br>1 2<br>0.4 0.25<br>0.3 0.10<br>1.3<br>Dimensions in mm 04-11-04<br>**----- End of picture text -----**<br> **Fig 7. Package outline SOT323 (SC-70)** ## **10. Packing information** ## **Table 9. Packing methods** The indicated -xxx are the last three digits of the 12NC ordering code ~~.~~ [1] |**Type number**<br>**Package**<br>**Description**|**Packing quantity**|**Packing quantity**| |---|---|---| ||**3000**|**10000**| |BAS21W<br>SOT323<br>4 mm pitch, 8 mm tape and reel<br>BAS21AW<br>BAS21SW|-115<br>-135|| [1] For further information and the availability of packing methods, see Section 14. © NXP B.V. 2009. All rights reserved. BAS21W_SER_1 **Rev. 01 — 9 October 2009** **Product data sheet** **7 of 11** **BAS21W series** **NXP Semiconductors** **High-voltage switching diodes** ## **11. Soldering** **==> picture [397 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 2.65<br>1.85<br>1.325<br>solder lands<br>2 solder resist<br>2.35 [0.6] 3 1.3 solder paste<br>(3×)<br>0.5 occupied area<br>1<br>(3×)<br>Dimensions in mm<br>0.55<br>(3×) sot323_fr<br>Fig 8. Reflow soldering footprint SOT323 (SC-70)<br>4.6<br>2.575<br>1.425<br>(3×)<br>solder lands<br>solder resist<br>occupied area<br>3.65 2.1 1.8 Dimensions in mm<br>09 preferred transport<br>(2×) direction during soldering<br>sot323_fw<br>Fig 9. Wave soldering footprint SOT323 (SC-70)<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BAS21W_SER_1 **Rev. 01 — 9 October 2009** **Product data sheet** **8 of 11** **BAS21W series** **NXP Semiconductors** **High-voltage switching diodes** ## **12. Revision history** |**Table 10.**|**Revision**|**history**|||| |---|---|---|---|---|---| |**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |BAS21W_SER_1||20091009|Product data sheet|-|-| © NXP B.V. 2009. All rights reserved. BAS21W_SER_1 **Rev. 01 — 9 October 2009** **Product data sheet** **9 of 11** **BAS21W series** **NXP Semiconductors** **High-voltage switching diodes** ## **13. Legal information** ## **13.1 Data sheet status** |**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**| |---|---| |Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.|| |Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.|| |Product [short] data sheet<br>Production<br>This document contains the product specifcation.|| [1] Please consult the most recently issued document before initiating or completing a design. [2] [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **13.2** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **13.3 Disclaimers** **General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ## **13.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **14. Contact information** For more information, please visit: **http://www.nxp.com** **salesaddresses@nxp.com** © NXP B.V. 2009. All rights reserved. BAS21W_SER_1 **Rev. 01 — 9 October 2009** **Product data sheet** **10 of 11** **BAS21W series** **NXP Semiconductors** **High-voltage switching diodes** ## **15. Contents** |**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**6**|**Thermal characteristics. . . . . . . . . . . . . . . . . . . 4**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4**| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6**| |8.1|Quality information . . . . . . . . . . . . . . . . . . . . . . 6| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7**| |**10**|**Packing information. . . . . . . . . . . . . . . . . . . . . . 7**| |**11**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**12**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**13**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 10**| |13.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10| |13.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |13.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |13.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |**14**|**Contact information. . . . . . . . . . . . . . . . . . . . . 10**| |**15**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| **==> picture [151 x 121] intentionally omitted <==** Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2009.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 9 October 2009 Document identifier: BAS21W_SER_1**
Updated at April 28, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →