BAS20,215

## **Application Note** 

# **Medium Power Transistors and Rectifiers for Power Management Applications** 

**AN10117-01** 

## **Philips Semiconductors** 

TRAD 

1.2/W97 

**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**Phili s Semiconductors p** 

**AN10117-01** 

© Koninklijke Philips Electronics N. V. 2003 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

Page 2 of 18 

**Application Note** 

## TRAD 

## **Phili s Semiconductors p** 

## **Application Note** 

# **Medium Power Transistors and Rectifiers for Power Management Applications** 

## **AN10117-01** 

## **Author(s): Thomas Bluhm** 

## **Philips Semiconductors BL General Application Discretes Hamburg, Germany** 

## **Keywords:** 

power supply, power managment, DC/DC converter, BISS transistor, MEGA Schottky rectifier, Low VCEsat 

**Number of pages : 18** 

**Date: 2003-12-09** 

Page 3 of 18 

**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**Phili s Semiconductors p** 

**AN10117-01** 

Page 4 of 18 

**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

|**Philips Semiconductors**<br>**AN10117-01**|**Philips Semiconductors**<br>**AN10117-01**|
|---|---|
|**Contents**||
|1.|INTRODUCTION..............................................................................................................................................7|
|2.|DISTRIBUTED POWER SUPPLIES OR POINT-OF-LOAD PRINCIPLE................................................7|
|3.|EXTENDED DESIGN CAPABILITIES AND IMPROVED CIRCUITS DUE TO NEW PRODUCT|
||FAMILIES ...............................................................................................................................................................8|
||Customer benefits...............................................................................................................................................8|
||Low_V_CEsat(BISS) transistors ..............................................................................................................................8|
||Low_V_F(MEGA) Schottky rectifiers.................................................................................................................9|
||Resistor-equipped transistors (RETs).............................................................................................................9|
|4.|RECTIFICATION............................................................................................................................................. 10|
||Half and full wave rectification ...................................................................................................................... 10|
||Voltage multiplier ............................................................................................................................................. 10|
||OR’ing diodes and reverse polarity protection......................................................................................... 10|
|5.|LINEAR POWER SUPPLIES........................................................................................................................... 12|
||Simple linear voltage regulator...................................................................................................................... 12|
||Voltage regulator IC extension..................................................................................................................... 12|
||Low drop-out voltage regulator using standard semiconductors ......................................................... 12|
||Bipolar voltage supply...................................................................................................................................... 12|
|6.|DC/DC CONVERSION ................................................................................................................................. 14|
||Step-up, step-down and step-up/down converter .................................................................................... 14|
||Synchronous high current DC/DC converter........................................................................................... 14|
|7.|SUPPORTING CIRCUITS.............................................................................................................................. 16|
||Supply line switch ............................................................................................................................................. 16|
||Battery charger ................................................................................................................................................. 16|
||CCFL backlight power supply (Royer circuit) ........................................................................................... 16|



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**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**Phili s Semiconductors p** 

**AN10117-01** 

Page 6 of 18 

**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**Phili s Semiconductors p** 

**AN10117-01** 

## **1. INTRODUCTION** 

The need to improve electronic circuits’ efficiency, to follow the ongoing trend to lower supply voltages and higher operating currents and to deal with multiple supply voltages has lead to certain discrete semiconductor innovations. Their major advantages are smaller packages, thus lower cost, and lower heat generation, thus higher circuit efficiency. 

Discrete semiconductors are used in large quantities in power management applications due to the following reasons: 

- High current and power dissipation capability 

- Capability to built circuits with excellent efficiency 

- Optimised for specific applications 

- Long-term availability, partly more than 20 years 

- Excellent price - performance ratio 

This application note provides information on the selection of medium power transistors and diodes, used in power management applications. The current capability of these products today is up to 5 A, the maximum operating voltage is as high as 100 V. Products which can further be found in power management applications like Low leakage current and High voltage (up to 300 V) diodes as well as Resistor-equipped transistors are also included. 

If you do you find an appropriate product feel free to call your nearest sales representative. The products recommended in this brochure are only a few out of hundreds. Further, we continuously expand our portfolio for high-efficient power management applications focussing on Low _V_ CEsat (BISS) transistors, Low _V_ F (MEGA) Schottky rectifiers, Resistor-equipped transistors (RETs). 

## **2. DISTRIBUTED POWER SUPPLIES OR POINT-OF-LOAD PRINCIPLE** 

Looking at PC-motherboard power supplies, or power management for digital still cameras, the tendency is the same: Voltages decrease while currents increase. Voltage drops to 0.9 V – due to further integration –, and current reaches values as high as 150 A – due to an increasing demand of power. Since the resulting voltage drop across the P.C.B. track is not negligible anymore the IC’s supply voltage must be generated close to the load (point-of-load). In addition, integrated circuits require different voltages for optimal operation due to different IC technologies. 

These requirements lead to distributed power supplies: One or more DC/DC converters and linear voltage regulators derive the IC’s or sub-circuit’s supply voltage from a battery or a system voltage (e.g. 12 V) which was generated by a AC/DC converter or an isolated DC/DC converter. 

The table below provides some popular voltages, today. The picture to the right illustrates the distributed power supply principle exemplary on a digital still camera. 

|**Domain**|**Voltage requirements**|
|---|---|
|||
|**Controller system**||
|Core supply|1.5/1.8/2.5 V|
|Memory|1.25/2.5 V|
|Logic|3.3/5 V|
|||
|**Peripheral**||
|Standard I/O|3.3/5 V|
|Modem lines<br>±12 V<br>TV-tuner varicap<br>28 V<br>Camera CCD sensor<br>-7.5 & 15 V<br>LC Displays<br>±5 & 15 V<br>Automotive I/O<br>14/42 V<br>Industrial I/O<br>24/48 V<br>~~Ss~~<br>~~A~~<br>~~a~~<br>~~OO~~<br>~~ee~~||



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**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**Phili s Semiconductors p** 

**AN10117-01** 

## **3. EXTENDED DESIGN CAPABILITIES AND IMPROVED CIRCUITS DUE TO NEW PRODUCT FAMILIES** 

## **Customer benefits** 

The short introduction into the product families below provides some background information on recent product developments and the resulting capabilities for the design of electronic circuits. 

The customer benefits can be various: 

- **Benefit** 

- – Transistors and rectifiers in small-signal packages are less expensive than their larger medium power equivalents 

- Smaller packages need less board space 

- Number of components and required board space decreases 

- Circuit efficiency increases due to reduced power dissipation 

- Hot spots can be avoided since the maximum junction temperature decreases 

**Example** OT23 vs. SOT223 

- 2 % savings comparing SOT223 to SOT23 

- and 75 % savings comparing SMA to SOD323 

ne double RET includes up to 6 components 

C = _I_ C x _V_ CEsat and _P_ F = _I_ F x _V_ F rom 117 °C to 41 °C comparing a BDP32 vs. a PBSS4540Z at 3 A 

## **Low** _**V**_ **CEsat (BISS[1] ) transistors** 

BISS transistors are high performance bipolar transistors.  Nothing was left untouched during their development: Due to an optimised die layout – using the mesh-emitter technology – the efficiency of the active area was significantly increased by minimising the distributed base resistance. Secondly, the leadframe layout was optimised to improve the thermal performance. Further, the electrical resistances of the die metal, die attach and bond wires were minimised. As a result the collector-emitter saturation voltage was significantly reduced. 

Thus, the performance of a SOT23 BISS transistor (e.g. PBSS4320T) is comparable to much larger medium power transistors in SOT223, or even better. Secondly, the BISS-technology enabled to design 500 mA transistors (PBSS2540F, PBSS3540F) in the ultra-small SOT490 (SC-89) package which measures only 1.6 x 0.8 m². On top of that Philips Semiconductors had released the world’s first 2 A-transistor in an ultra-small SOT666 package (1.6 x 1.2 mm²) in early 2003. 

The active emitter area was significantly be increased using a mesh-emitter layout (right). 

> 1 BISS – Breakthrough In Small Signal 

Page 8 of 18 

**Application Note** 

**AN10117-01** 

# **Medium Power Transistors and Rectifiers for Power Management Applications** 

## **Phili s Semiconductors p** 

## **Low** _**V**_ **F (MEGA[2] ) Schottky rectifiers** 

The forward voltage drop along with the flowing forward current causes the most significant part of diodes’ losses. MEGA Schottky rectifiers are characterised by a significantly reduced forward voltage drop due to a new metal barrier, an optimised die layout and a minimised bond wire resistance. 

These improvements enable Philips Semiconductors to offer Schottky rectifiers in the very small SOD323 (SC-76) and ultra-small (SOT666) packages which perform like much larger SOD123 and SMA rectifiers and are thus capable to replace them. 

**==> picture [412 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
SMA  SOD323  SOT666<br>**----- End of picture text -----**<br>


MEGA Schottky rectifiers in SOD323 and SOT666 are capable to replace much larger SMA rectifiers at comparable electrical performance. 

## **Resistor-equipped transistors (RETs)** 

RETs are basically 100 mA-General Purpose Transistors equipped with one or two resistors. They thus reduce the number of external components and minimise the required board space. They are used to control IC inputs or to switch smaller loads like LEDs to give just two examples. 

Philips Semiconductors’ strength lies in offering a complete RETs portfolio including 16 resistance combinations in nine small signal packages. Double RETs are included in the very small SOT363 (SC-88) and the ultra-small SOT666 packages. At the end of 2003 already 241 types are available. By end of 2004 about 400 types will cover at least 90 % of the worldwide applications. 

RETs are used to switch small loads or to control IC inputs 

> 2 MEGA – Maximum Efficiency General Application 

Page 9 of 18 

**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**Phili s Semiconductors p** 

**AN10117-01** 

## **4. RECTIFICATION** 

## **Half and full wave rectification** 

Application: Low cost mains supplied wall adapters, low cost battery chargers, forward and fly-back SMPS (e.g. UCC38xx-series, TEA15xx-series) 

AC signal may be mains voltage (110 / 230 V, 60 / 50 Hz) or derived from a DC/DC converter (50 kHz to 2 MHz) 

**==> picture [85 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Half wave rectification<br>**----- End of picture text -----**<br>


Select rectifiers or switching diodes for higher voltages, where forward voltage drop is negligible 

Select Schottky diodes for low voltages, high currents or high frequencies, where forward voltage drop and power dissipation is important 

**==> picture [83 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
Full wave rectification<br>**----- End of picture text -----**<br>


Series connected (for full wave rectifier) or common cathode (for bridge rectifier) double diodes reduce component count and board space saving 

Full wave (bridge) rectification 

Forward converter secondary side 

## **Voltage multiplier** 

Application: Power supply for TFT displays and white LEDs 

Voltage doubler uses D1-2, C1-2; voltage tripler uses D1-3, C1-3 

Series connected double diodes for voltage doubler and triple isolated diodes for voltage tripler reduce component count and save board space 

AC signal may be derived from a DC/DC converter, a simple oscillator (e.g. multivibrator) or from mains voltage 

Select Low _V_ F Schottky diodes for low voltage drop 

DC tripler and inverter used in TFT displays 

Select Low leakage current diodes for lowest reverse current 

## **OR’ing diodes and reverse polarity protection** 

Application: Reverse polarity protection (single diode) and parallel operation of power supplies (multiple diodes) to avoid battery discharge or high cross-currents 

Select Low _V_ F (MEGA) Schottky rectifiers for lowest voltage drop 

OR’ing configuration 

Common cathode double diodes or triple isolated diodes reduce component count 

Page 10 of 18 

**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**AN10117-01** 

## **Phili s Semiconductors p** 

## **Low** _**V**_ **F (MEGA) Schottky rectifiers** 

|**Package**|**Limiting values**<br>**Features**<br>**Type(s)**|
|---|---|
||**_I_F**<br>**_V_R**<br>**_V_Fmax @ ****_I_F**|
|SOT457(SC-74)|1 A<br>60 V<br>650 mV@1 A<br>PMEG6010AED|
|SOD323 (SC-76)|2 A<br>10 V<br>350 mV@1 A<br>PMEG1020EA|
||1.5 A<br>20 V<br>660 mV@1,5 A<br>PMEG2015EA|
||1 A<br>20 V<br>550 mV@1 A<br>PMEG2010EA|
||1 A<br>20/30/40 V<br>500 mV@1 A*)<br>PMEG2010BEA/PMEG3010BEA/PMEG4010BEA|
||0.5 A<br>20/30/40 V<br>390 mV@0.5 A<br>PMEG2005AEA/PMEG3005AEA/PMEG4005AEA|
|SOD523 (SC-79)|1 A<br>20 V<br>620 mV@1 A<br>PMEG2010AEB|
||0.2 A<br>30 V<br>480 mV@0.2 A<br>PMEG3002AEB|
|SOT666|2 A<br>10 V<br>350 mV@1 A<br>PMEG1020EV|
||1.5 A<br>20 V<br>660 mV@1,5 A<br>PMEG2015EV|
||1 A<br>20 V<br>550 mV@1 A<br>PMEG2010EV|
||0.5 A<br>20/30/40 V<br>390 mV@0.5 A<br>PMEG2005AEV/PMEG3005AEV30/PMEG4005AEV|
|SOD882|0.2 A<br>30 V<br>480 mV@0.2 A<br>PMEG3002AEL|



*) PMEG2010BEA 

## **Schottky diodes** 

|**Package**|**Limiting values**<br>**Features**|**Type(s)**|
|---|---|---|
||**_I_F**<br>**_V_R**<br>**_V_Fmax @ ****_I_F**<br>**Configuration**||
|SOT223 (SC-73)|1 A<br>25 / 40 / 60 V<br>450 mV @ 1 A<br>0,2 A<br>30 V<br>600 mV@0,1 A<br>Double, series connected or<br>common cathode|BAT120_ / BAT140_<br>/BAT160_*)|
|SOT23||BAT754_*)|
|SOT363 (SC-88)|0.2 A<br>30 V<br>750 mV@0.1 A<br>30 mA<br>15 V<br>700 mV@30 mA<br>Triple, isolated|BAT754L|
|||1PS88SB82|



*) Series connected: “_” = “S”, common cathode “_” = “C” 

## **Low leakage current diodes** 

|**Package**|**Limiting values**<br>**Features**|**Type**|
|---|---|---|
||**_I_F**<br>**_V_R**<br>**_I_R @ ****_V_R**|**Configuration**|
|SOT23|0.215 A<br>75 V<br>5 nA @ 75 V<br>0.160 A<br>0.2 A<br>0.135 A|Single<br>BAS116|
|||Double,series connected<br>BAV199|
|SOD323||Single<br>BAS416|
|SOT323||Double,series connected<br>BAV199W|



## **Switching diodes, special configurations** 

|**Package**<br>**Limiting values**<br>**Features**|**Type**|
|---|---|
|**_I_F**<br>**_V_R**<br>**_t_rr**|**Configuration**|
|SOT363 (SC-88)<br>0.2 A<br>75 V<br>4 ns|Two double,series connected<br>BAV99S|
||Triple isolated<br>BAS16VY|



## **General purpose diodes** _**V**_ **R >100 V** 

|**Package**<br>**Limiting values**<br>**Features**|**Package**<br>**Limiting values**<br>**Features**|**Type**|
|---|---|---|
|**_I_F**|**_V_R**<br>**_t_rr**|**Configuration**|
|SOT23<br>0.2 A|150 V<br>50 ns<br>200 V<br>200 V<br>200 V<br>300 V<br>200 V<br>150 V<br>200 V|Single<br>BAS20|
|||Single<br>BAS21|
|||Double,series connected<br>BAV23S|
|SOT143<br>0.225 A||Double,isolated<br>BAV23|
|SOD323(SC-76)<br>0.25 A||Single<br>BAS321|
|SOD523(SC-79)<br>0.25 A||Single<br>BAS521|
|SOT457(SC-74)<br>0.2 A||Tripple,isolated<br>BAS21VD|
|SOD27 (DO-35)<br>0.25 A||Single<br>BAV20|
|||Single<br>BAV21|



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**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**Phili s Semiconductors p** 

**AN10117-01** 

## **5. LINEAR POWER SUPPLIES** 

## **Simple linear voltage regulator** 

Application: Low current voltage regulation and decoupling for subcircuits (e.g. DC/DC controller ICs, pre-amplifier) 

Most simple voltage regulation solution 

Appropriate for low currents (<0.1 A) and low stability requirements 

No ripple or noise 

Low current linear voltage regulator 

## **Voltage regulator IC extension** 

Application: To extend current and power dissipation capabilities of LDOs (e.g. MAX687, LT1123, ADM666A) and DC/DC controller ICs with linear voltage regulators (e.g. MAX1778, MAX1865) 

Select Low _V_ CEsat (BISS) transistors due to high current gain and for lowest voltage drop 

Appropriate for currents up to 5 A 

No ripple or noise 

Current and power extension of linear voltage regulators 

## **Low drop-out voltage regulator using standard semiconductors** 

Application: Linear low drop voltage regulator using only standard semiconductor 

Select Low _V_ CEsat (BISS) transistors as PNP pass transistor for lowest voltage drop 

Appropriate for currents up to 5 A 

No ripple or noise 

Voltage regulator uses standard semiconductors only 

## **Bipolar voltage supply** 

Application: Voltage supply for operational amplifiers and other circuits, which need a bipolar voltage 

Uses standard semiconductors only 

No ripple or noise 

Bipolar voltage supply 

Page 12 of 18 

**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**AN10117-01** 

## **Phili s Semiconductors p** 

## **Low** _**V**_ **CEsat (BISS) transistors** 

|**Package**|**Limiting values**<br>**Features**|**Type**|
|---|---|---|
||**_I_C**<br>**_V_CEO**<br>**_P_tot**|**_V_CEsat max@ ****_I_C**<br>**Polarity**|
|SOT223 (SC-73)|5 A<br>40 V<br>2 W**)<br>3 A<br>50 V|355 mV@5 A<br>NPN<br>PBSS4540Z|
|||375 mV@5 A<br>PNP<br>PBSS5540Z|
|||290 mV@2 A<br>NPN<br>PBSS4350Z|
|||300 mV@2 A<br>PNP<br>PBSS5350Z|
|SOT89 (SC-62)|5 A<br>40 V<br>1.4 W**)<br>3 A<br>20 / 50 V|355 mV@5 A<br>NPN<br>PBSS4540X|
|||375 mV@5 A<br>PNP<br>PBSS5540X|
|||310 mV@3 A***)<br>NPN<br>PBSS4320X/PBSS4350X|
|||300 mV@3 A***)<br>PNP<br>PBSS5320X/PBSS5350X|
|SOT457(SC-74)|3 A<br>20 V<br>0.75 W**)|400 mV@3 A<br>PNP<br>PBSS5320D|
|SOT666|2 A<br>40 V<br>0.5 W*)|400 mV@2 A<br>NPN<br>PBSS4240V|
|||530 mV@2 A<br>PNP<br>PBSS5240V|
|SOT54 (TO-92)|3 A<br>50 V<br>0.83 W|290 mV@2 A<br>NPN<br>PBSS4350S|
|||300 mV@2 A<br>PNP<br>PBSS5350S|



*) on 1 cm² collector mounting pad **) on 6 cm²  collector mounting pad 

## **Medium power transistors** 

|**Package**<br>**Limiting values**<br>**Features**|**Types**|
|---|---|
|**_I_C**<br>**_V_CEO**<br>**_P_tot**|**Polarity**|
|SOT223 (SC-73)<br>1 A<br>1.35 W*)<br>20 / 45 /<br>60/100 V|NPN<br>BCP68/BCP54/BCP55/BCP56|
||PNP<br>BCP69/BCP51/BCP52/BCP53|
|SOT89 (SC-62)<br>1 A<br>1.35 W**)<br>20 / 45 /<br>60/100 V|NPN<br>BC868/BCX54/BCX55/BCX56|
||PNP<br>BC869/BCX51/BCX52/BCX53|
|SOT54 (TO-92)<br>1 A<br>0.83 W<br>20 / 45 /<br>60/80 V|NPN<br>BC368/BC635/BC637/BC639|
||PNP<br>BC369/BC636/BC638/BC640|



*) on 1 cm² collector mounting pad **) on 6 cm²  collector mounting pad 

## **NPN/PNP double transistors** 

|**Package**|**Limiting values**<br>**Features**<br>**Type**|
|---|---|
||**_I_C**<br>**_V_CEO**<br>**_P_tot**<br>**Technology**|
|SOT457 (SC-74)|1.1 A<br>40 V<br>0.6 W*)<br>Low_V_CEsat (BISS)<br>PBSS4240DPN|
||0.5 A<br>45 V<br>0.6 W*)<br>Generalpurpose<br>BC817DPN|
|SOT363 (SC-88)|0.5 A<br>15 V<br>0.3 W<br>Low_V_CEsat (BISS)<br>PBSS2515YPN|
||0.1 A<br>45 V<br>0.3 W<br>Generalpurpose<br>BC847BPN|
|SOT666|0.5 A<br>15 V<br>0.3 W<br>Low_V_CEsat (BISS)<br>PBSS2515VPN|
||0.1 A<br>45 V<br>0.3 W<br>Generalpurpose<br>BC847BVN|



*) on 1 cm² collector mounting pad 

## **Zener diodes** 

|**Package**|**Limiting values**|**Features**||**Type**|
|---|---|---|---|---|
||**_I_F**|**_P_tot**|**_V_Z**||
|SOT23|0.2 A|0.25 W|2.4 to 75 V,E24 series|BZX84 series|
|SOD323(SC-76)|0.25 A|0.3 W|2.4 to 75 V,E24 series|BZX384 series|
|SOD523(SC-79)|0.2 A|0.3 W|2.4 to 15 V,E24 series|BZX585 series|
|SOD27(DO-35)|0.25 A|0.5 W|2.4 to 75 V,E24 series|BZX79 series|



Page 13 of 18 

**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**Phili s Semiconductors p** 

**AN10117-01** 

## **6. DC/DC CONVERSION** 

## **Step-up, step-down and step-up/down converter** 

Application: Low and medium power step-up, step-down and step-up/down DC/DC converter 

Select Low _V_ CEsat (BISS) transistors for lowest voltage drop 

Select Low _V_ F (MEGA) Schottky rectifiers for lowest forward voltage 

Traditional boost converter 

Appropriate for currents up to 5 A 

## **Synchronous high current DC/DC converter** 

Application: Synchronous DC/DC converter on motherboards and in SMPS modules 

D1: Free-wheeling diode conducts while both MOSFETs are switched off 

Select Low _V_ F (MEGA) Schottky rectifiers for lowest voltage drop 

D2: Boosting diode provides driving voltage for the high-side driver together with C1 

Select Schottky diode for low voltage drop 

Q1/Q2, Q3/Q4: Complementary MOSFET driver reduce MOSFET switching times 

Select switching transistors for standard applications 

Select Low _V_ CEsat (BISS) transistors for faster switching due to higher current gain ( _h_ FE) 

Synchronous DC/DC converter 

Select double transistors to reduce component count and board space saving 

Application: Isolated forward converter for telecom infrastructure and automotive applications 

Select Low _V_ CEsat (BISS) transistors for lowest voltage drop 

Select Low _V_ F (MEGA) Schottky rectifiers for lowest forward voltage 

Forward converter 

## **NPN/PNP double transistors** 

|**Package**|**Limiting values**|**Limiting values**|**Features**|**Features**|**Type**|
|---|---|---|---|---|---|
||**_I_C**|**_V_CEO**|**_P_tot**|**Technology**||
|SOT457 (SC-74)|1.1 A|40 V|0.6 W*)|Low_V_CEsat (BISS)|PBSS4240DPN|
||0.5 A|45 V|0.6 W*)|Generalpurpose|BC817DPN|
|SOT363 (SC-88)|0.5 A|15 V|0.3 W|Low_V_CEsat (BISS)|PBSS2515YPN|
||0.1 A|45 V|0.3 W|Generalpurpose|BC847BPN|
|SOT666|0.5 A|15 V|0.3 W|Low_V_CEsat (BISS)|PBSS2515VPN|
||0.1 A|45 V|0.3 W|Generalpurpose|BC847BVN|



> *) on 1 cm² collector mounting pad 

Page 14 of 18 

**Application Note** 

**AN10117-01** 

# **Medium Power Transistors and Rectifiers for Power Management Applications** 

## **Phili s Semiconductors p** 

## **Low** _**V**_ **F (MEGA) Schottky rectifiers** 

|**Package**|**Limiting values**<br>**Features**<br>**Type(s)**|
|---|---|
||**_I_F**<br>**_V_R**<br>**_V_Fmax @ ****_I_F**|
|SOT457(SC-74)|1 A<br>60 V<br>650 mV@1 A<br>PMEG6010AED|
|SOD323 (SC-76)|2 A<br>10 V<br>350 mV@1 A<br>PMEG1020EA|
||1.5 A<br>20 V<br>660 mV@1,5 A<br>PMEG2015EA|
||1 A<br>20 V<br>550 mV@1 A<br>PMEG2010EA|
||1 A<br>20/30/40 V<br>500 mV@1 A*)<br>PMEG2010BEA/PMEG3010BEA/PMEG4010BEA|
|SOD523 (SC-79)|1 A<br>20 V<br>620 mV@1 A<br>PMEG2010AEB|
||0.2 A<br>30 V<br>480 mV@0.2 A<br>PMEG3002AEB|
|SOT666|2 A<br>10 V<br>350 mV@1 A<br>PMEG1020EV|
||1.5 A<br>20 V<br>660 mV@1,5 A<br>PMEG2015EV|
||1 A<br>20 V<br>550 mV@1 A<br>PMEG2010EV|



*) PMEG2010BEA 

## **Low** _**V**_ **CEsat (BISS) transistors** 

|**Package**|**Limiting values**<br>**Features**|**Type(s)**|
|---|---|---|
||**_I_C**<br>**_V_CEO**<br>**_P_tot**|**_V_CEsat max@ ****_I_C**<br>**Polarity**|
|SOT223 (SC-73)|5 A<br>40 V<br>2 W**)<br>3 A<br>50 V|355 mV@5 A<br>NPN<br>PBSS4540Z|
|||375 mV@5 A<br>PNP<br>PBSS5540Z|
|||290 mV@2 A<br>NPN<br>PBSS4350Z|
|||300 mV@2 A<br>PNP<br>PBSS5350Z|
|SOT89 (SC-62)|5 A<br>40 V<br>1.4 W**)<br>3 A<br>20 / 50 V|355 mV@5 A<br>NPN<br>PBSS4540X|
|||375 mV@5 A<br>PNP<br>PBSS5540X|
|||310 mV@3 A***)<br>NPN<br>PBSS4320X/PBSS4350X|
|||300 mV@3 A***)<br>PNP<br>PBSS5320X/PBSS5350X|
|SOT457(SC-74)|3 A<br>20 V<br>0.75 W**)|400 mV@3 A<br>PNP<br>PBSS5320D|
|SOT23|2 A<br>20 / 50 V<br>0.48 W*)|210 mV@2 A***)<br>NPN<br>PBSS4320T/PBSS4350T|
|||210 mV@2 A***)<br>PNP<br>PBSS5320T/PBSS5350T|
||1 A<br>60 V / 100 V<br>0.4 W*)|250 mV@1 A****)<br>NPN<br>PBSS4160T/PBSS8160T|
|||330 mV@1 A****)<br>PNP<br>PBSS5160T/PBSS9160T|
|SOT666|2 A<br>40 V<br>0.5 W*)|400 mV@2 A<br>NPN<br>PBSS4240V|
|||530 mV@2 A<br>PNP<br>PBSS5240V|
|SOT54 (TO-92)|3 A<br>50 V<br>0.83 W|290 mV@2 A<br>NPN<br>PBSS4350S|
|||300 mV@2 A<br>PNP<br>PBSS5350S|



*) on 1 cm² collector mounting pad 

**) on 6 cm²  collector mounting pad 

***) PBSSxx20x ****) PBSSxx60T 

## **Medium power transistors** 

|**Package**<br>**Limiting values**<br>**Features**|**Types**|
|---|---|
|**IC**<br>**VCEO**<br>**Ptot**|**Polarity**|
|SOT223 (SC-73)<br>1 A<br>1.35 W*)<br>20 / 45 /<br>60/100 V|NPN<br>BCP68/BCP54/BCP55/BCP56|
||PNP<br>BCP69/BCP51/BCP52/BCP53|
|SOT89 (SC-62)<br>1 A<br>1.35 W**)<br>20 / 45 /<br>60/100 V|NPN<br>BC868/BCX54/BCX55/BCX56|
||PNP<br>BC869/BCX51/BCX52/BCX53|
|SOT54 (TO-92)<br>1 A<br>0.83 W<br>20 / 45 /<br>60/80 V|NPN<br>BC368/BC635/BC637/BC639|
||PNP<br>BC369/BC636/BC638/BC640|



*) on 1 cm² collector mounting pad **) on 6 cm²  collector mounting pad 

Page 15 of 18 

**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**Phili s Semiconductors p** 

**AN10117-01** 

## **7. SUPPORTING CIRCUITS** 

## **Supply line switch** 

Application: Devices where either power sequencing is important for proper work (e.g. TFT displays) or sub-circuits shall be switched off when not needed to save battery power (e.g. laptop computers) 

Select BISS Loadswitches as ready-to-use solution and tight space requirements 

Select Low _V_ CEsat (BISS) transistors as PNP pass transistor for lowest voltage drop 

Supply line switch 

Select (double) Resistor-equipped transistors to reduce component count and to save P.C.B. space 

(PDTA-, PDTC-, PUMx- and PEMx-series) 

Select double devices for tightest space requirements and reduced placement costs 

## **Battery charger** 

Application: Pass transistor to extend current and power dissipation of battery charger ICs 

(e.g. TEA110x. 4-cell Ni-MH / NiCd battery charger; MAX1898 and LTC1734. 1-cell Li-ion battery charger) 

Battery charger with discharge protection diode 

Add Low _V_ F Schottky rectifier to avoid battery discharge in case of an input source short circuit (MAX1898) or Low leakage current diode for minimum battery discharge 

Select Low _V_ CEsat (BISS) transistors due to high current gain and for lowest dropout voltage 

Appropriate for currents up to 5 A 

## **CCFL backlight power supply (Royer circuit)** 

Application: Push-pull (Royer) stage (Q1/Q2) for CCFL backlight power supply for TFT displays in laptops. PDAs and TFT-monitors and rectifier (D1/D2) for voltage feedback 

Control circuit incorporates a switching regulator (e.g. LT1186F, UCC3972) to drive the two transistor push-pull stage 

Stand-by function for the UCC3972 to be build using double Resistorequipped transistors (PUMD- or PEMD-series) 

Royer circuit for CCFL backlight power supply 

Page 16 of 18 

**Application Note** 

# **Medium Power Transistors and Rectifiers for Power Management Applications** 

## **Phili s Semiconductors p** 

# **AN10117-01** 

## **BISS Loadswitches** 

|**Package**|**Limiting**|**values**|**Features**||**Type(s)**|
|---|---|---|---|---|---|
||**_I_C**|**_V_CEO**|**_V_CEsat max@ ****_I_C**|||
|SOT666|0.5 A|15 V|250 mV @ 0.5 A|PNP Low_V_CEsat(BISS)|PBLS1502V / PBLS1503V /|
|||||transistor and NPN RET|PBLS1504V|
|SOT363 (SC-88)|0.1 A|50 V|200 mV @ 50 mA|PNP General purpose transistor|PUMF11 / PUMF12|
|||||and NPN RET||



## **Low** _**V**_ **CEsat (BISS) transistors** 

|**Package**<br>**Limiting values**<br>**Features**|**Type(s)**|
|---|---|
|**_I_C**<br>**_V_CEO**<br>**_P_tot**|**_V_CEsat max@ ****_I_C**<br>**Polarity**|
|SOT223 (SC-73)<br>5 A<br>40 V<br>2 W**)|355 mV@5 A<br>NPN<br>PBSS4540Z|
||375 mV@5 A<br>PNP<br>PBSS5540Z|
|SOT89 (SC-62)<br>3 A<br>20 / 50 V<br>1.4 W**)|310 mV@3 A***)<br>NPN<br>PBSS4320X/PBSS4350X|
||300 mV@3 A***)<br>PNP<br>PBSS5320X/PBSS5350X|
|SOT23<br>2 A<br>20 / 50 V|210 mV@2 A<br>NPN<br>PBSS4320T/PBSS4350T|
||210 mV@2 A<br>PNP<br>PBSS5320T/PBSS5350T|
|SOT666<br>2 A<br>40 V<br>0.5 W*)|400 mV@2 A<br>NPN<br>PBSS4240V|
||530 mV@2 A<br>PNP<br>PBSS5240V|
|SOT54 (TO-92)<br>3 A<br>50 V<br>0.83 W|290 mV@2 A<br>NPN<br>PBSS4350S|
||300 mV@2 A<br>PNP<br>PBSS5350S|



*) on 1 cm² collector mounting pad **) on 6 cm²  collector mounting pad ***) PBSSxx20x 

## **Resistor-equipped transistors (RETs)** 

|**Package**<br>**Limiting values**<br>**Features**|**Type(s)**|
|---|---|
|**_I_C**<br>**_V_CEO**<br>**R1, R2**|**Configuration**<br>**Polarity**|
|various<br>0.1 A<br>50 V<br>SOT363(SC-88)<br>SOT666<br>1 kΩ–<br>100 kΩ|single<br>NPN<br>PDTC-series|
||single<br>PNP<br>PDTA-series|
||double<br>NPN/PNP<br>PUMD-series|
||double<br>NPN/PNP<br>PEMD-series|



## **Low** _**V**_ **F (MEGA) Schottky rectifiers** 

|**Package**|**Limiting values**<br>**Features**<br>**Type(s)**|
|---|---|
||**_I_F**<br>**_V_R**<br>**_V_Fmax @ ****_I_F**|
|SOT457(SC-74)|1 A<br>60 V<br>650 mV@1 A<br>PMEG6010AED|
|SOD323 (SC-76)|1 A<br>20 V<br>550 mV@1 A<br>PMEG2010EA|
||1 A<br>20 V<br>500 mV@1 A*)<br>PMEG2010BEA|
|SOD523(SC-79)|0.2 A<br>30 V<br>480 mV@0.2 A<br>PMEG3002AEB|
|SOT666|1 A<br>20 V<br>550 mV@1 A<br>PMEG2010EV|



## **Low leakage current diodes** 

|**Package**<br>**Limiting values**<br>**Features**|**Type**|
|---|---|
|**_I_F**<br>**_V_R**<br>**_I_R @ ****_V_R**|**Configuration**|
|SOT23<br>0.215 A<br>75 V<br>5 nA @ 75 V<br>SOD323<br>0.2 A|Single<br>BAS116|
||Single<br>BAS416|



## **Double, series connected switching diodes** 

|**Package**<br>**Limiting values**<br>**Features**|**Type**|
|---|---|
|**_I_F**<br>**_V_R**<br>**_t_rr**|**Configuration**|
|SOT23<br>0.215 A<br>75 V<br>4 ns<br>SOT323<br>0.1 A<br>SOT363(SC-88)<br>0.2 A|Double,series connected<br>BAV99|
||Double,series connected<br>BAV99W|
||Two double,series connected<br>BAV99S|



Page 17 of 18 

**Medium Power Transistors and Rectifiers for Power Management Applications** 

**Application Note** 

**Phili s Semiconductors p** 

**AN10117-01** 

## **Further information:** 

## **Low VCEsat (BISS) transistors** 

- Leaflet: Breakthrough in small signal, Low _V_ CEsat transistors selection guide (9397 750 11275) 

- AN10116: Breakthrough in small signal – Low _V_ CEsat transistors and their applications 

## **Low VF (MEGA) Schottky rectifier** 

- Leaflet: Schottky diodes selection guide (9397 750 09967) 

- Leaflet: MEGA Schottky diodes selection guide (9397 750 10821) 

- AN10230: The PMEG1020EA and PMEG2010EA MEGA Schottky diodes – a pair designed for high efficiency rectification 

## **Resistor-equipped transistors (RETs)** 

- Leaflet: Resistor-equipped transistors (RETs) – family overview and selection guide (9397 750 11248) 

Contact: Thomas Bluhm, Application Support Manager Business Line General Application Discretes (BLGA) Philips Semiconductors GmbH, Stresemannalle 101, D-22529 Hamburg Tel: +49-40 56 13-18 04, email: Thomas.Bluhm@Philips.com 

Page 18 of 18