BAS16XV2T1G

BAS16XV2 

## Switching Diode 

## **Features** 

- High−Speed Switching Applications 

- Lead Finish: 100% Matte Sn (Tin) 

- Qualified Reflow Temperature: 260° C 

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- Extremely Small SOD−523 Package 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

1 2 CATHODE ANODE 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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2 MARKING<br>DIAGRAM<br>-<br>1<br>SOD−523<br>A6 M<br>CASE 502<br>- 1 2<br>**----- End of picture text -----**<br>


## **MAXIMUM RATINGS** 

**Rating Symbol Value Unit SOD−523** A6 M **CASE 502** Continuous Reverse Voltage VR 100 V ~~-~~ 1 2 Continuous Forward Current IF 200 mA A6 = Specific Device Code ~~——~~ Peak Forward Surge Current IFM(surge) 500 mA M = Date Code Repetitive Peak Forward Current IFRM 500 mA = Pb−Free Package (Pulse Wave = 1 sec, Duty Cycle = 66%) (Note: Microdot may be in either location) ~~ee~~ Non−Repetitive Peak Forward Current ~~ee~~ IFSM ~~ee~~ A ~~|~~ (Square Wave, TJ = 25 ° C prior to surge) t = 1 s 4.0 **ORDERING INFORMATION** t = 1 ms 1.0 t = 1 s 0.5 **Device Package Shipping** † Stresses exceeding those listed in the Maximum Ratings table may damage the BAS16XV2T1G SOD−523 3000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (Pb−Free) assumed, damage may occur and reliability may be affected. BAS16XV2T5G SOD−523 8000 / Tape & Reel (Pb−Free) **THERMAL CHARACTERISTICS** SBAS16XV2T1G SOD−523 3000 /T ape & Reel **Characteristic Symbol Max Unit** (Pb−Free) Total Device Dissipation, (Note 1)TA = 25 ° C PD 200 mW SBAS16XV2T5G SOD−523 8000 / Tape & Reel ~~pe~~ Derate above 25 ° C 1.57 mW/ ° C ~~===~~ (Pb−Free) Thermal Resistance, Junction−to−Ambient R θ JA 635 ° C/W †For information on tape and reel specifications,including part orientation and tape sizes, please Junction and Storage Temperature TJ, Tstg −55 to 150 ° C Brochure, BRD8011/D.refer to our Tape and Reel Packaging Specifications 

1. FR-5 Minimum Pad. 

Publication Order Number: **BAS16XV2T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **August, 2018 − Rev. 9** 

**BAS16XV2** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Voltage Leakage Current<br>(VR= 100 V)<br>(VR= 75 V, TJ= 150°C)<br>(VR= 25 V, TJ= 150°C)|IR|−<br>−<br>−|1.0<br>50<br>30|�A|
|Reverse Breakdown Voltage<br>(IBR= 100�A)|V(BR)|100|−|V|
|Forward Voltage<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 50 mA)<br>(IF= 150 mA)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mV|
|Diode Capacitance (VR= 0, f = 1.0 MHz)|CD|−|2.0|pF|
|Forward Recovery Voltage<br>(IF= 10 mA, tr= 20 ns)|VFR|−|1.75|V|
|Reverse Recovery Time<br>(IF= IR= 10 mA, RL= 50Ω)|trr|−|6.0|ns|
|Stored Charge<br>(IF= 10mA to VR= 5.0V, RL= 500Ω)|QS|−|45|pC|



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820 Ω<br>IF<br>+10 V 2.0 k 0.1 μF tr t p t<br>100 μH IF 10% t rr t<br>0.1 μF<br>D.U.T. 90%<br>50 Ω OUTPUT 50 Ω INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k Ω variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

## **BAS16XV2** 

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100 10<br>TA = 150°C<br>TA = 85°C TA = 125°C<br>1.0<br>10<br>TA = -�40°C TA = 85°C<br>0.1<br>1.0 TA = 25°C TA = 55°C<br>0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**Figure 3. Leakage Current** 

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0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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o 2 © 2<br>1 1<br>STYLE 1 STYLE 2<br>SCALE 4:1<br>−X−<br>D<br>−Y−<br>— —<br>E<br>1 2<br>2X b qe<br>0.08 M X Y<br>TOP VIEW<br>A<br>id 4,<br>c IL HE<br>SIDE VIEW<br>2X L<br>ste<br>2X L2 JE<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


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RECOMMENDED<br>SOLDERING FOOTPRINT*<br>2X 1.80<br>0.48 2X<br>0.40<br>TH ) ,<br>PACKAGE ao<br>OUTLINE DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br>


**SOD−523** CASE 502−01 ISSUE E 

## DATE 28 SEP 2010 

## NOTES: 

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 

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4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-<br>TRUSIONS, OR GATE BURRS.<br>MILLIMETERS<br>DIM MIN NOM MAX<br>A 0.50 0.60 0.70<br>b 0.25 0.30 0.35<br>c 0.07 0.14 0.20<br>D 1.10 1.20 1.30<br>E 0.70 0.80 0.90<br>H E 1.50 1.60 1.70<br>L 0.30 REF<br>L2 0.15 0.20 0.25<br>====<br>GENERIC<br>MARKING DIAGRAM*<br>XX XX<br>1 2 1 2<br>dj Ff q_<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M  Date Code Ff<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present.<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE (POLARITY BAND) NO POLARITY<br>2. ANODE<br>M M<br>**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON11524D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOD−523 PAGE 1 OF 1** ~~_ 1~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

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