BAS16WT1G

## BAS16WT1G 

## Silicon Switching Diode 

## **Features** 

- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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3 1 CATHODE ANODE 

**MAXIMUM RATINGS** (TA = 25 ° C) 

**Rating Symbol Value Unit** Continuous Reverse Voltage VR 100 V Recurrent Peak Forward Current IR 200 mA ~~——~~ Peak Forward Surge Current IFM(surge) 500 mA Pulse Width = 10 s ~~a~~ Total Power Dissipation, ~~ee eee~~ One Diode Loaded TA = 25 ° C PD 200 mW Derate above 25 ° C Mounted on a Ceramic Substrate 1.6 mW/ ° C (10 x 8 x 0.6 mm) ~~pt~~ Operating and Storage Junction TJ, Tstg −55 to ° C Temperature Range +150 ~~po~~ 

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MARKING<br>DIAGRAM<br>A6 M<br>SC−70<br>CASE 419<br>STYLE 2 1<br>a<br>A6 = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(*Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended **ORDERING INFORMATION** Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **Device Package Shipping**[†] **THERMAL CHARACTERISTICS** BAS16WT1G SC−70 3000 / Tape & Reel (Pb−Free) **Characteristic Symbol Max Unit** SBAS16WT1G SC−70 3000 / Tape & Reel Thermal Resistance, ° (Pb−Free) Junction−to−Ambient R JA 625 C/W One Diode Loaded NSVBAS16WT3G SC−70 10000 / Tape & Mounted on a Ceramic Substrate (Pb−Free) Reel (10 x 8 x 0.6 mm) †For information on tape and reel specifications, ~~pT ==~~ including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **BAS16WT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **March, 2014− Rev. 11** 

## **BAS16WT1G** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Forward Voltage<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 50 mA)<br>(IF= 150 mA)|VF|−<br>−<br>−<br>−|715<br>866<br>1000<br>1250|mV|
|Reverse Current<br>(VR= 100 V)<br>(VR= 75 V, TJ= 150°C)<br>(VR= 25 V, TJ= 150°C)|IR|−<br>−<br>−|1.0<br>50<br>30|�A|
|Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|2.0|pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, RL= 50�) (Figure 1)|trr|−|6.0|ns|
|Stored Charge<br>(IF= 10 mA to VR= 6.0 V, RL= 500�) (Figure 2)|QS|−|45|PC|
|Forward Recovery Voltage<br>(IF= 10 mA, tr= 20 ns) (Figure 3)|VFR|−|1.75|V|



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**2** 

**BAS16WT1G** 

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1 ns MAX<br>t 500 � DUT<br>10% trr<br>tif<br>50 �<br>DUTY CYCLE = 2%<br>90%<br>VF Irr<br>100 ns<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Recovery Time Equivalent Test Circuit** 

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OSCILLOSCOPE<br>R  �  10 M �<br>C  �  7 pF<br>VC 500 � DUT BAW62<br>20 ns MAX VCM<br>t D1 243 pF 100 K�<br>10%<br>VCM � [Qa]<br>C<br>DUTY CYCLE = 2%<br>t<br>90%<br>Vf<br>400 ns<br>**----- End of picture text -----**<br>


**Figure 2. Stored Charge Equivalent Test Circuit** 

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V<br>120 ns<br>1 K� 450 �<br>V<br>90%<br>DUT 50 �<br>Vfr<br>10% t<br>DUTY CYCLE = 2%<br>2 ns MAX<br>**----- End of picture text -----**<br>


**Figure 3. Forward Recovery Voltage Equivalent Test Circuit** 

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**3** 

## **BAS16WT1G** 

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100 10<br>TA = 150°C<br>TA = 125°C<br>1.0<br>10<br>TA = 85°C TA = 85°C<br>0.1<br>1.0 TA = 25°C TA = 55°C<br>TA = -�40°C 0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 4. Forward Voltage** 

**Figure 5. Leakage Current** 

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0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 6. Capacitance** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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**SC−70 (SOT−323)** CASE 419 ISSUE P 

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DATE 07 OCT 2021<br>**----- End of picture text -----**<br>


**SCALE 4:1** 

## **GENERIC MARKING DIAGRAM** 

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XX M �<br>�<br>1<br>XX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

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STYLE 1: STYLE 2: STYLE 3:<br>CANCELLED PIN 1. ANODE PIN 1. BASE<br>2. N.C. 2. EMITTER<br>3. CATHODE 3. COLLECTOR<br>STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. EMITTER PIN 1. BASE PIN 1. GATE<br> 2. BASE  2. EMITTER  2. SOURCE<br> 3. COLLECTOR  3. COLLECTOR  3. DRAIN<br>**----- End of picture text -----**<br>


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STYLE 4: STYLE 5:<br>PIN 1. CATHODE PIN 1. ANODE<br>2. CATHODE  2. ANODE<br>3. ANODE  3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11:<br>PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br> 2. CATHODE  2. ANODE 2. CATHODE<br> 3. CATHODE-ANODE  3. ANODE-CATHODE 3. CATHODE<br>**----- End of picture text -----**<br>


## **DOCUMENT NUMBER: 98ASB42819B** 

**DESCRIPTION: SC−70 (SOT−323)** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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