BAS16TT1G

BAS16TT1G 

## Silicon Switching Diode 

## **Features** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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## **MAXIMUM RATINGS** (TA = 25 ° C) 

|**THERMAL CHARACTERISTICS**|~~ee ~~|~~ee ~~|~~ee~~|
|---|---|---|---|
|**Characteristic**<br>~~St~~|**Symbol**<br>~~St~~|**Max**<br>~~St~~|**Unit**<br>~~St~~|
|Total Device Dissipation,<br>FR−4 Board (Note 1)<br>TA= 25°C<br>Derated above 25°C<br>~~St~~|PD<br>~~St~~|225<br>1.8<br>~~St~~|mW<br>mW/°C<br>~~St~~|
|Thermal Resistance,<br>Junction−to−Ambient (Note 1)|R JA|555|°C/W|
|Total Device Dissipation,<br>FR−4 Board (Note 2)<br>TA= 25°C<br>Derated above 25°C<br>~~IFS~~|PD<br>~~IFS~~|360<br>2.9<br>~~IFS~~|mW<br>mW/°C<br>~~IFS~~|
|Thermal Resistance,<br>Junction−to−Ambient (Note 2)<br>~~IFS~~|R JA<br>~~IFS~~|345<br>~~IFS~~|°C/W<br>~~IFS~~|
|Junction and Storage<br>Temperature Range<br>~~IFS~~|TJ, Tstg<br>~~IFS~~|−55 to<br>+150<br>~~IFS~~|°C<br>~~IFS ~~|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

3 1 CATHODE ANODE 

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MARKING<br>DIAGRAM<br>3<br>CASE 463<br>SOT−416 A6  [M]<br>2 STYLE 2<br>1<br>1<br>XX = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION Device Package Shipping**[†] BAS16TT1G SOT−416 3000 / Tape & Reel (Pb−Free) ~~EE~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

1. FR−4 @ Minimum Pad 

2. FR−4 @ 1.0 × 1.0 Inch Pad 

Publication Order Number: **BAS16TT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **May, 2013 − Rev. 4** 

## **BAS16TT1G** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Forward Voltage<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 50 mA)<br>(IF= 150 mA)|VF|−<br>−<br>−<br>−|715<br>866<br>1000<br>1250|mV|
|Reverse Current<br>(VR= 100 V)<br>(VR= 75 V, TJ= 150°C)<br>(VR= 25 V, TJ= 150°C)|IR|−<br>−<br>−|1.0<br>50<br>30|�A|
|Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|2.0|pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, RL= 50�) (Figure 1)|trr|−|6.0|ns|
|Stored Charge<br>(IF= 10 mA to VR= 6.0 V, RL= 500�) (Figure 2)|QS|−|45|PC|
|Forward Recovery Voltage<br>(IF= 10 mA, tr= 20 ns) (Figure 3)|VFR|−|1.75|V|



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**2** 

**BAS16TT1G** 

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1 ns MAX<br>t 500 � DUT<br>10% trr<br>tif<br>50 �<br>DUTY CYCLE = 2%<br>90%<br>VF Irr<br>100 ns<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Recovery Time Equivalent Test Circuit** 

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OSCILLOSCOPE<br>R  �  10 M �<br>C  �  7 pF<br>VC 500 � DUT BAW62<br>20 ns MAX VCM<br>t D1 243 pF 100 K�<br>10%<br>VCM � [Qa]<br>C<br>DUTY CYCLE = 2%<br>t<br>90%<br>Vf<br>400 ns<br>**----- End of picture text -----**<br>


**Figure 2. Stored Charge Equivalent Test Circuit** 

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V<br>120 ns<br>1 K� 450 �<br>V<br>90%<br>DUT 50 �<br>Vfr<br>10% t<br>DUTY CYCLE = 2%<br>2 ns MAX<br>**----- End of picture text -----**<br>


**Figure 3. Forward Recovery Voltage Equivalent Test Circuit** 

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**3** 

## **BAS16TT1G** 

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100 10<br>TA = 150°C<br>TA = 125°C<br>1.0<br>10<br>TA = 85°C TA = 85°C<br>0.1<br>1.0 TA = 25°C TA = 55°C<br>TA = -�40°C 0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 4. Forward Voltage** 

**Figure 5. Leakage Current** 

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0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 6. Capacitance** 

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1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01 0.01<br>SINGLE PULSE<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 7. Normalized Thermal Response** 

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**4** 

**BAS16TT1G** 

## **PACKAGE DIMENSIONS** 

**SC−75/SOT−416** CASE 463−01 ISSUE F 

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−E− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Ta Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>2<br>MILLIMETERS INCHES<br>3<br>e −D− DIM MIN NOM MAX MIN NOM MAX<br>A 0.70 0.80 0.90 0.027 0.031 0.035<br>1<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 3 PL<br>b 0.15 0.20 0.30 0.006 0.008 0.012<br>0.20 (0.008) M D C 0.10 0.15 0.25 0.004 0.006 0.010<br>HE 0.20 (0.008) E D 1.55 1.60 1.65 0.059 0.063 0.067<br>E 0.70 0.80 0.90 0.027 0.031 0.035<br>e 1.00 BSC 0.04 BSC<br>a lo B L 0.10 0.15 SS 0.20 0.004 0.006 0.008<br>HE 1.50 1.60 1.70 0.061 0.063 0.065<br>C STYLE 2:<br>A PIN 1. ANODE<br> 2. N/C<br> 3. CATHODE<br>Lp. L A1<br>SOLDERING FOOTPRINT*<br>0.356<br>0.014<br>ah<br>1.803 0.787<br>0.071 0.031<br>—|hr ip t—<br>0.508 a<br>0.020 1.000<br>a 0.039<br>SCALE 10:1 mm<br>= inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**BAS16TT1/D** 

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