BAS16P2T5G
Small Signal Diode, Single, 100 V, 200 mA, 1.25 V, 6 ns, 500 mA
- Manufacturer: ONSEMI
- Product type: Small Signal Diodes
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:6ns; Forward Surge Curr
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-923
- Diode Configuration: Single
- Forward Voltage Max: 1.25V
- Forward Surge Current: 500mA
- Reverse Recovery Time: 6ns
- Average Forward Current: 200mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.038 € |
| Current stock | 500+ |
| Lead time | 30 days |
Switching Diode
## BAS16P2T5G
The BAS16P2T5G Switching Diode is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOD−923 surface mount package. This device is ideal for low−power surface mount applications, where board space is at a premium.
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## **Features**
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
1 2 CATHODE ANODE
## **MAXIMUM RATINGS**
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MARKING<br>Unit 2 DIAGRAM<br>Vdc<br>1<br>mAdc<br>SOD−923 A6M<br>mAdc CASE 514AB 1 2<br>FF °<br>**----- End of picture text -----**<br>
**Rating Symbol Value Unit** Continuous Reverse Voltage VR 100 Vdc Peak Forward Current IF 200 mAdc ~~——+~~ Peak Forward Surge Current IFM(surge) 500 ~~FF~~ mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
A6 = Specific Device Code M = Month Code
**THERMAL CHARACTERISTICS**
**Characteristic Symbol Max Unit** Thermal Resistance, Junction−to−Ambient (Note 1) R JA 520 ° C/W **ORDERING INFORMATION** Total Power Dissipation @ PD 240 mW **Device Package Shipping**[†] TA = 25 ° C ~~TP,~~ BAS16P2T5G SOD−923 8000 / Tape & Reel Thermal Resistance,Junction−to−Ambient (Note 2) R JA 175 ° C/W (Pb−Free) Total Power Dissipation @ PD 710 mW †For information on tape and reel specifications, TA = 25 ° C including part orientation and tape sizes, please ~~ep Hee~~ Junction and Storage TJ, Tstg −55 to ° C refer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D. Temperature Range +150 ~~ee ee~~
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06 ″ thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06 ″ thick single sided. Operating to steady state.
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2013 **October, 2020 − Rev. 2**
**BAS16P2/D**
## **BAS16P2T5G**
## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted)
|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Voltage Leakage Current<br>(VR= 75 Vdc)<br>(VR= 100 Vdc)<br>(VR= 75 Vdc, TJ= 150°C)<br>(VR= 25 Vdc, TJ= 150°C)|IR|−<br>−<br>−<br>−|1.0<br>100<br>50<br>30|�Adc|
|Reverse Breakdown Voltage<br>(IBR= 100�Adc)|V(BR)|100|−|Vdc|
|Forward Voltage<br>(IF= 1.0 mAdc)<br>(IF= 10 mAdc)<br>(IF= 50 mAdc)<br>(IF= 150 mAdc)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mV|
|Diode Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|2.0|pF|
|Forward Recovery Voltage<br>(IF= 10 mAdc, tr= 20 ns)|VFR|−|1.75|Vdc|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc, RL= 50�)|trr|−|6.0|ns|
|Stored Charge<br>(IF= 10 mAdc to VR= 5.0 Vdc,<br>RL= 500�)|QS|−|45|pC|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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**2**
**BAS16P2T5G**
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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br>
Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr
**Figure 1. Recovery Time Equivalent Test Circuit**
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100 10<br>TA = 150°C<br>TA = 85°C TA = 125°C<br>1.0<br>10<br>TA = -�40°C TA = 85°C<br>0.1<br>1.0 TA = 25°C TA = 55°C<br>0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>
**Figure 2. Forward Voltage**
**Figure 3. Leakage Current**
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0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 4. Capacitance**
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**3**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**SOD−923** CASE 514AB ISSUE D
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STYLE 1 STYLE 2<br>SCALE 8:1<br>−X−<br>D<br>as −Y−<br>E<br>1 2<br>2X b oe<br>0.08 X Y<br>TOP VIEW<br>A<br>c HE<br>_ ><br>SIDE VIEW<br>2X L<br>2X L2 oe ache] fe<br>BOTTOM VIEW<br>SOLDERING FOOTPRINT*<br>1.20<br>2X<br>0.36 2X<br>0.25<br>tr<br>PACKAGE a<br>OUTLINE<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>
DATE 03 SEP 2020
- NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
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4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS.<br>5. DIMENSION L WILL NOT EXCEED 0.30mm.<br>MILLIMETERS INCHES<br>| DIM | MIN ~—__| NOM MAX MIN —____ NOM MAX ]<br>A 0.34 0.37 0.40 0.013 0.015 0.016<br>b 0.15 0.20 0.25 0.006 0.008 0.010<br>c 0.07 0.12 0.17 0.003 0.005 0.007<br>D 0.75 0.80 0.85 0.030 0.031 0.033<br>E 0.55 0.60 0.65 0.022 0.024 0.026<br>HE 0.95 1.00 1.05 0.037 0.039 0.041<br>L 0.19 REF 0.007 REF<br>—————— L2 0.05 0.10 0.15 0.002 0.004 0.006<br>GENERIC<br>MARKING DIAGRAM*<br>X M X M<br>STYLE 1 STYLE 2<br>{1}<br>X = Specific Device Code<br>M = Date Code<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present.<br>)<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE (POLARITY BAND) NO POLARITY<br>2. ANODE<br>**----- End of picture text -----**<br>
See Application Note AND8455/D for more mounting details
- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON23284D** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOD−923, 1.0X0.6X0.37, MAX HEIGHT 0.40 PAGE 1 OF 1** ~~—_~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
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