BAS16HT1G

## **Is Now Part of** 

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March 2010<br>**----- End of picture text -----**<br>


## **BAS16HT1G Small Signal Diode** 

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Connection Diagram<br>1<br>1<br>A1<br>2<br>SOD-323 2<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings *** TA = 25°C unless otherwise noted 

|**Absolute Maximum Ratings ***|**Absolute Maximum Ratings ****TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted|TA = 25°C unless otherwise notedA = 25°C unless otherwise noted= 25°C unless otherwise noted||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Units**|
|VRRM|Maximum Repetitive Reverse Voltage|85|V|
|IF(AV)|Average Rectified Forward Current|200|mA|
|IFSM|Non-repetitive Peak Forward Surge Current<br>Pulse Width = 1.0 second|600|mA|
|TSTG|Storage Temperature Range|-65 to +150|°C|
|TJ|Operating Junction Temperature|-55 to +150|°C|



* These ratings are limiting values above which the serviceability of the diode may be impaired. 

## **NOTES:** 

1)These ratings are based on a maximum junction temperature of 150 degrees C. 

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Value**|**Units**|
|---|---|---|---|
|PD|Power Dissipation|200|mW|
|RθJA|Thermal Resistance, Junction to Ambient|600|°C/W|



## **Electrical Characteristics** TA = 25°C unless otherwise noted 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|VR|Breakdown Voltage|IR= 5.0μA|85||V|
|VF|Forward Voltage|IF= 0.1mA<br>IF= 10mA<br>IF= 50mA<br>IF= 150mA||715<br>855<br>1.0<br>1.25|mV<br>mV<br>V<br>V|
|IR|Reverse Leakage|VR= 75V<br>VR= 25V, TA= 150°C<br>VR= 75V, TA= 150°C||1.0<br>30<br>50|μA<br>μA<br>μA|
|CT|Total Capacitance|VR= 0, f = 1.0MHz||2.0|pF|
|trr|Reverse Recovery Time|IF= IR= 10mA, IRR= 1.0mA,<br>RL= 100Ω||6.0|ns|



www.fairchildsemi.com 

© 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 

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## **Typical Performance Characteristics** 

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150 Ta= 25 ° C<br>140<br>130<br>120<br>110<br>1  2  3  5  10  20 30  50  100<br>Reverse Current, IR [uA]<br>R<br> [v]<br>R<br>Reverse Voltage, V<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100** μ **A** 

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485 Ta= 25 ° C<br>450<br>400<br>350<br>300<br>250<br>225<br>1  2  3  5  10  20 30  50  100<br>F Forward Current, IF [uA]<br>F<br> [mV]Forward Voltage, VF<br>**----- End of picture text -----**<br>


**Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100** μ **A** 

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1.5 Ta= 25 ° C<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>10  20  30  50  100  200 300  500<br>Forward Current, IF [mA]<br>F<br> [V]Forward Voltage, VF<br>**----- End of picture text -----**<br>


**Figure 5. Forward Voltage vs Forward Current VF - 10 - 800mA** 

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300 Ta= 25 ° C<br>250<br>200<br>150<br>100<br>50<br>0<br>10  20  30  50  70  100<br>Reverse Voltage, VR [v]<br>GENERAL RULE: The Reverse Current of a diode will approximately<br>double for every ten (10) Degree C increase in Temperature<br> [nA]<br>R<br>Reverse Current, I<br>**----- End of picture text -----**<br>


**Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V** 

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725 Ta= 25 ° C<br>700<br>650<br>600<br>550<br>500<br>450<br>0.1  0.2 0.3  0.5  1  2  3  5  10<br>Forward Current, IF [mA]<br>F<br> [mV]Forward Voltage, VF<br>**----- End of picture text -----**<br>


**Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA** 

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1.3 Ta= 25 ° C<br>1.2<br>1.1<br>1<br>0 2 4 6 8 10 12 14 15<br>Reverse Voltage [V]<br> [pF]T<br>Total Capacitance, C<br>**----- End of picture text -----**<br>


**Figure 6. Total Capacitance** 

© 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 

www.fairchildsemi.com 

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## **Typical Performance Characteristics** (Continued) 

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4 Ta= 25 ° C 4 00 500<br>3.5 400<br>3 00<br>3<br>300<br>2.5 2 00<br>200<br>2<br>1 00 100<br>1.5<br>110  20  Reverse Current [mA] 30  40  50  60 0 0 0 0 A Ambient Temperature, T 5 0 50 100 1 00 A [  C] o o 150 1 50<br>IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms<br>Io - AVERAGE RECTIFIED CURRENT - mA<br>IF (A V )  - A V ER A G E R EC T IF IED  C U R R EN T  - m A<br>I    - FORWARD CURRENT STEADY STATE - mAR<br>D<br> [ns]<br>Reverse Recovery Time, trr C u rren t  [m A ]<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Recovery Time vs Reverse Current TRR - IR 10mA vs 60mA** 

**Figure 2. Average Rectified Current (IF(AV)) vs Ambient Temperature (TA)** 

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500<br>400<br>DO-35 Pkg<br>300<br>SOT-23 Pkg<br>200<br>100 SOD-323 Pkg<br>0<br>0 50 100 150 200<br>Average Temperature, Io [oC]<br> [mW]Power Dissipation, PD<br>**----- End of picture text -----**<br>


**Figure 3. Power Derating Curve** 

© 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 

www.fairchildsemi.com 

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## **Physical Dimension** 

## SOD-323 

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Dimensions in Millimeters 

© 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 

www.fairchildsemi.com 

4 

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## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change in<br>anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes<br>at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I47 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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