BAS16DXV6T1G

BAS16DXV6 

## Dual Switching Diode 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** (TA = 25 ° C) 

~~es~~ **Rating Symbol** ~~es ee~~ **Max Unit** ~~es~~ Continuous Reverse Voltage VR 100 V Recurrent Peak Forward Current IF 200 mA ~~ee eeee~~ ~~**ee**~~ Peak Forward Surge Current IFM(surge) 500 mA Pulse Width = 10 s ~~esee~~ **THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit** ~~i~~ Total Device Dissipation (Note 1) PD TA = 25 ° C 357 mW Derate above 25 ° C 2.9 mW/ ° C ~~Pe~~ Thermal Resistance, R JA 350 ° C/W Junction-to-Ambient (Note 1) ~~ee~~ **Characteristic (Both Junctions Heated) Symbol Max Unit** ~~i~~ Total Device Dissipation (Note 1) PD TA = 25 ° C 500 mW Derate above 25 ° C 4.0 mW/ ° C ~~PT~~ Thermal Resistance, R JA 250 ° C/W Junction-to-Ambient (Note 1) ~~ee~~ Junction and Storage Temperature TJ, T ~~es~~ stg ~~es~~ −55 to +150 ° C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad ~~a ee~~ 

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6 1 4 3 

## [4] 6[5] &[3] 1[2] **SOT−563 CASE 463A PLASTIC** 

## **MARKING DIAGRAM** 

A6  M 

A6 = Specific Device Code M = Date Code = Pb−Free Package 3 (Note: Microdot may be in either location) 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] BAS16DXV6T1G SOT−563 4000 / Tape & (Pb−Free) Reel SBAS16DXV6T1G SOT−563 4000 / Tape & (Pb−Free) Reel ~~Ff~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **BAS16DXV6/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **August, 2015 − Rev. 5** 

## **BAS16DXV6** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Forward Voltage<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 50 mA)<br>(IF= 150 mA)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mV|
|Reverse Current<br>(VR= 100 V)<br>(VR= 75 V, TJ= 150°C)<br>(VR= 25 V, TJ= 150°C)|IR|−<br>−<br>−|1.0<br>50<br>30|�A|
|Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|2.0|pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, RL= 50�) (Figure 1)|trr|−|6.0|ns|
|Stored Charge<br>(IF= 10 mA to VR= 6.0 V, RL= 500�) (Figure 2)|QS|−|45|PC|
|Forward Recovery Voltage<br>(IF= 10 mA, tr= 20 ns) (Figure 3)|VFR|−|1.75|V|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

**BAS16DXV6** 

**==> picture [467 x 126] intentionally omitted <==**

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1 ns MAX<br>t 500 � DUT<br>10% trr<br>tif<br>50 �<br>DUTY CYCLE = 2%<br>90%<br>VF Irr<br>100 ns<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Recovery Time Equivalent Test Circuit** 

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OSCILLOSCOPE<br>R  �  10 M �<br>C  �  7 pF<br>VC 500 � DUT BAW62<br>20 ns MAX VCM<br>t D1 243 pF 100 K�<br>10%<br>VCM � [Qa]<br>C<br>DUTY CYCLE = 2%<br>t<br>90%<br>Vf<br>400 ns<br>**----- End of picture text -----**<br>


**Figure 2. Stored Charge Equivalent Test Circuit** 

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V<br>120 ns<br>1 K� 450 �<br>V<br>90%<br>DUT 50 �<br>Vfr<br>10% t<br>DUTY CYCLE = 2%<br>2 ns MAX<br>**----- End of picture text -----**<br>


**Figure 3. Forward Recovery Voltage Equivalent Test Circuit** 

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**3** 

**BAS16DXV6** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100 10<br>TA = 150°C<br>TA = 125°C<br>1.0<br>10<br>TA = 85°C TA = 85°C<br>0.1<br>1.0 TA = 25°C TA = 55°C<br>TA = -�40°C 0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 4. Forward Voltage** 

**Figure 5. Leakage Current** 

**==> picture [238 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 6. Capacitance** 

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1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01 0.01<br>SINGLE PULSE<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 7. Normalized Thermal Response** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOT−563, 6 LEAD<br>6 CASE 463A<br>& ISSUE G<br>1<br>SCALE 4:1<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>D 2. CONTROLLING DIMENSION: MILLIMETERS<br>−X− A 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>L FINISH THICKNESS. MINIMUM LEAD THICKNESS<br>IS THE MINIMUM THICKNESS OF BASE MATERIAL.<br>6 5 4 MILLIMETERS INCHES<br>o −Y−E HE t DIMA 0.50 MIN NOM 0.55 MAX 0.60 0.020 MIN 0.021 NOM 0.023 MAX<br>1 2 3 b 0.17 0.22 0.27 0.007 0.009 0.011<br>C 0.08 0.12 0.18 0.003 0.005 0.007<br>LJe [ - D 1.50 1.60 e 1.70 0.059 e 0.062 0.066<br>b 5 PL6  C E 1.10 1.20 1.30 0.043 0.047 0.051<br>e 0.08 (0.003) M X Y Le 0.10 0.5 BSC0.20 0.30 0.004 0.02 BSC0.008 0.012<br>HE 1.50 1.60 1.70 0.059 0.062 0.066<br>GENERIC<br>STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. EMITTER 1 PIN 1. EMITTER 1 PIN 1. CATHODE 1 MARKING DIAGRAM*<br> 2. BASE 1  2. EMITTER2  2. CATHODE 1<br> 3. COLLECTOR 2  3. BASE 2  3. ANODE/ANODE 2<br> 4. EMITTER 2  4. COLLECTOR 2  4. CATHODE 2<br> 5. BASE 2  5. BASE 1  5. CATHODE 2<br> 6. COLLECTOR 1  6. COLLECTOR 1  6. ANODE/ANODE 1 XX M<br>STYLE 4: STYLE 5: STYLE 6: 1<br>PIN 1. COLLECTOR PIN 1. CATHODE PIN 1. CATHODE<br> 2. 3. BASECOLLECTOR  2. 3. ANODECATHODE  2. 3. ANODECATHODE XX = Specific Device Code<br> 4. EMITTER  4. ANODE  4. CATHODE M = Month Code<br> 5. 6. COLLECTORCOLLECTOR  5. 6. CATHODECATHODE  5. 6. CATHODECATHODE = Pb−Free Package<br>STYLE 7: STYLE 8: STYLE 9:<br>PIN 1. CATHODE PIN 1. DRAIN PIN 1. SOURCE 1 *This information is generic. Please refer to<br> 2. ANODE  2. DRAIN  2. GATE 1 device data sheet for actual part marking.<br> 3. 4. CATHODECATHODE  3. 4. GATESOURCE  3. 4. SOURCE 2DRAIN 2 Pb−Free indicator, “G” or microdot “ ”,<br> 5. ANODE  5. DRAIN  5. GATE 2 may or may not be present.<br> 6. CATHODE  6. DRAIN  6. DRAIN 1<br>STYLE 10:<br>PIN 1. CATHODE 1 SOLDERING FOOTPRINT*<br> 2. N/C<br> 3. CATHODE 2 0.3<br> 4. ANODE 2<br> 5. N/C 0.0118<br> 6. ANODE 1 i ry<br>0.45<br>0.0177<br>1.0<br>1.35 ree 0.0394<br>0.0531<br>load<br>0.5 0.5<br>0.0197 0.0197<br>SCALE 20:1 mm<br>inches<br>— — — (—})<br>**----- End of picture text -----**<br>


DATE 23 SEP 2015 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON11126D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−563, 6 LEAD PAGE 1 OF 1** ~~————_——————~~ 

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