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BAS16,235
Small Signal Diode, Single, 100 V, 215 mA, 1.25 V, 4 ns, 4 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NEXPERIA
- Product type: Small Signal Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOT-23
- Diode Configuration: Single
- Forward Voltage Max: 1.25V
- Forward Surge Current: 4A
- Reverse Recovery Time: 4ns
- Average Forward Current: 215mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 30000 |
| Price | 0.02 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Product data sheet** ## **BAS16 series** ## **High-speed switching diodes** **Rev. 6 — 24 September 2014** ## **1. Product profile** ## **1.1 General description** High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. ## **Table 1. Product overview** |**Type number**|**Package**|**Package**|**Package**|**Configuration**|**Package**<br>**configuration**| |---|---|---|---|---|---| ||**NXP**|**JEITA**|**JEDEC**||| |BAS16|SOT23|-|TO-236AB|single|small| |BAS16H|SOD123F|-|-|single|small and flat lead| |BAS16J|SOD323F|SC-90|-|single|very small and flat<br>lead| |BAS16L|SOD882|-|-|single|leadless ultra<br>small| |BAS16T|SOT416|SC-75|-|single|ultra small| |BAS16VV|SOT666|-|-|triple isolated|ultra small and flat<br>lead| |BAS16VY|SOT363|SC-88|-|triple isolated|very small| |BAS16W|SOT323|SC-70|-|single|very small| |BAS316|SOD323|SC-76|-|single|very small| |BAS516|SOD523|SC-79|-|single|ultra small and flat<br>lead| ## **1.2 Features and benefits** - High switching speed: trr 4 ns - Low leakage current - Repetitive peak reverse voltage: VRRM 100 V - Low capacitance - Reverse voltage: VR 100 V - Small SMD plastic packages - AEC-Q101 qualified ## **1.3 Applications** - High-speed switching - General-purpose switching **==> picture [172 x 101] intentionally omitted <==** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** ## **1.4 Quick reference data** **Table 2. Quick reference data** _Tamb = 25_ _C unless otherwise specified._ |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**<br>|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**Per diode**|||||||| |VR|reverse voltage|||-|-<br>|100|V| |IR|reverse current|VR= 80 V||-|-<br>|0.5|A| |trr|reverse recovery<br>time|IF= 10 mA; IR= 10 mA;<br>RL= 100; IR(meas)= 1 mA||-|-<br>|4|ns| ## **2. Pinning information** **==> picture [396 x 417] intentionally omitted <==** **----- Start of picture text -----**<br> Table 3. Pinning<br>Pin Description Simplified outline Graphic symbol<br>BAS16; BAS16T; BAS16W<br>1 anode<br>3 3<br>2 not connected<br>1 2<br>3 cathode<br>006aaa764<br>1 2<br>006aaa144<br>BAS16H; BAS16J; BAS316; BAS516<br>1 cathode [1]<br>2 anode 1 2<br>1 2<br>006aab040<br>001aab540<br>BAS16L<br>1 cathode [1]<br>2 anode 1 2 1 2<br>006aab040<br>Transparent<br>top view<br>BAS16VV; BAS16VY<br>1 anode (diode 1)<br>6 5 4 6 5 4<br>2 anode (diode 2)<br>3 anode (diode 3)<br>4 cathode (diode 3)<br>5 cathode (diode 2)<br>1 2 3<br>6 cathode (diode 1) 001aab555 1 2 3<br>006aab106<br>**----- End of picture text -----**<br> [1] The marking bar indicates the cathode. © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **2 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** ## **3. Ordering information** ## **Table 4. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |BAS16|TO-236AB|plastic surface-mounted package; 3 leads|SOT23| |BAS16H|-|plastic surface-mounted package; 2 leads|SOD123F| |BAS16J|SC-90|plastic surface-mounted package; 2 leads|SOD323F| |BAS16L|DFN1006-2|leadless ultra small plastic package; 2 terminals;<br>body 1.00.60.5 mm|SOD882| |BAS16T|SC-75|plastic surface-mounted package; 3 leads|SOT416| |BAS16VV|-|plastic surface-mounted package; 6 leads|SOT666| |BAS16VY|SC-88|plastic surface-mounted package; 6 leads|SOT363| |BAS16W|SC-70|plastic surface-mounted package; 3 leads|SOT323| |BAS316|SC-76|plastic surface-mounted package; 2 leads|SOD323| |BAS516|SC-79|plastic surface-mounted package; 2 leads|SOD523| ## **4. Marking** ## **Table 5. Marking codes** |**Type number**|**Marking cod**~~**e**~~**[1]**| |---|---| |BAS16|A6*| |BAS16H|A1| |BAS16J|AR| |BAS16L|S2| |BAS16T|A6| |BAS16VV|53| |BAS16VY|16*| |BAS16W|A6*| |BAS316|A6| |BAS516|6| [1] * = placeholder for manufacturing site code ## **5. Limiting values** ## **Table 6. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**Per diode**||||||| |VRRM|repetitive peak reverse<br>voltage|||-|100|V| |VR|reverse voltage|||-|100|V| © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **3 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** **Table 6. Limiting values** _…continued_ _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**||**Min**|**Max**|**Unit**| |---|---|---|---|---|---|---| |IF|forward current|||||| ||BAS16||[1]|-|215|mA| ||BAS16H<br>BAS16L||[2]|-|215|mA| ||BAS16T||[1]|-|155|mA| ||BAS16VV<br>BAS16VY||[1]<br>[3]|-|200|mA| ||BAS16W||[1]|-|175|mA| ||BAS16J<br>BAS316<br>BAS516||[1]|-|250|mA| |IFRM|repetitive peak forward<br>current|tp0.5 ms;<br>0.25||-|500|mA| |IFSM|non-repetitive peak forward<br>current|square wave;<br>Tj(init)= 25 °C||||| |||tp= 1s||-|4|A| |||tp= 1 ms||-|1|A| |||tp= 1 s||-|0.5|A| |Ptot|total power dissipation|||||| ||BAS16|Tamb25C|[1]|-|250|mW| ||BAS16H|Tamb25C|[2]|-|380|mW| ||||[5]|-|830|mW| ||BAS16J|Tamb25C|[5]|-|550|mW| ||BAS16L|Tamb25C|[2]|-|250|mW| ||BAS16T|Tsp90C|[1]<br>[4]|-|170|mW| ||BAS16VV|Tamb25C|[1]<br>[3]|-|180|mW| ||BAS16VY|Tsp85C|[1]<br>[3]<br>[6]|-|250|mW| ||BAS16W|Tamb25C|[1]|-|200|mW| ||BAS316|Tsp90C|[1]<br>[4]|-|400|mW| ||BAS516|Tsp90C|[1]<br>[4]|-|500|mW| |**Per device**||||||| |Tj|junction temperature|||-|150|C| |Tamb|ambient temperature|||65|+150|C| |Tstg|storage temperature|||65|+150|C| [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60 m copper strip line. [3] Single diode loaded. [4] Soldering point of cathode tab. [5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm[2] . [6] Soldering points at pins 4, 5 and 6. © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **4 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** ## **6. Thermal characteristics** ## **Table 7. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |Rth(j-a)|thermal resistance from<br>junction to ambient|in free air|||||| ||BAS16||[1]|-|-|500|K/W| ||BAS16H||[2]|-|-|330|K/W| ||||[3]|-|-|150|K/W| ||BAS16J||[3]|-|-|230|K/W| ||BAS16L||[2]|-|-|500|K/W| ||BAS16VV||[2]<br>[4]|-|-|700|K/W| ||||[3]<br>[4]|-|-|410|K/W| ||BAS16W||[1]|-|-|625|K/W| |Rth(j-sp)|thermal resistance from<br>junction to solder point||||||| ||BAS16|||-|-|330|K/W| ||BAS16H||[5]|-|-|70|K/W| ||BAS16J||[5]|-|-|55|K/W| ||BAS16T|||-|-|350|K/W| ||BAS16VY||[4]<br>[6]|-|-|260|K/W| ||BAS16W|||-|-|300|K/W| ||BAS316||[5]|-|-|150|K/W| ||BAS516||[5]|-|-|120|K/W| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60 m copper strip line. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm[2] . [4] Single diode loaded. [5] Soldering point of cathode tab. - [6] Soldering points at pins 4, 5 and 6. © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **5 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** ## **7. Characteristics** ## **Table 8. Characteristics** _Tamb = 25_ _C unless otherwise specified._ |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**Per diode**|||||||| |VF|forward voltage||[1]||||| |||IF= 1 mA||-|-|715|mV| |||IF= 10 mA||-|-|855|mV| |||IF= 50 mA||-|-|1|V| |||IF= 150 mA||-|-|1.25|V| |IR|reverse current|VR= 25 V||-|-|30|nA| |||VR= 80 V||-|-|0.5|A| |||VR= 25 V; Tj= 150C||-|-|30|A| |||VR= 80 V; Tj= 150C||-|-|50|A| |Cd|diode capacitance|f = 1 MHz; VR= 0 V|||||| ||BAS16; BAS16H;<br>BAS16J; BAS16L;<br>BAS16T; BAS16VV;<br>BAS16VY; BAS16W;<br>BAS316|||-|-|1.5|pF| ||BAS516|||-|-|1|pF| |trr|reverse recovery time|IF= 10 mA; IR= 10 mA;<br>RL= 100;<br>IR(meas)= 1 mA||-|-|4|ns| |VFR|forward recovery voltage|IF= 10 mA; tr= 20 ns||-|-|1.75|V| [1] Pulse test: tp 300 s; 0.02. © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **6 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab132<br>10 [3]<br>IF<br>(mA)<br>10 [2]<br>10<br>(1) (2) (3) (4)<br>1<br>10 [−] [1]<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VF (V)<br>**----- End of picture text -----**<br> - (1) Tamb = 150 C - (2) Tamb = 85 C **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] mbg704<br>IFSM<br>(A)<br>10<br>1<br>10 [−] [1]<br>1 10 10 [2] 10 [3] 10 [4]<br>tp ( μ s)<br>**----- End of picture text -----**<br> Based on square wave currents. Tj(init) = 25 C - (3) Tamb = 25 C (4) Tamb = 40 C **Fig 1. Forward current as a function of forward voltage; typical values** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab133<br>10 [2]<br>IR (1)<br>( μ A)<br>10<br>1 (2)<br>10 [−] [1]<br>(3)<br>10 [−] [2]<br>10 [−] [3]<br>10 [−] [4] (4)<br>10 [−] [5]<br>0 20 40 60 80 100<br>VR (V)<br>**----- End of picture text -----**<br> - (1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = 40 C **Fig 3. Reverse current as a function of reverse voltage; typical values** **Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values** **==> picture [233 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> mbg446<br>0.8<br>Cd<br>(pF)<br>0.6<br>0.4<br>0.2<br>0<br>0 4 8 12 16<br>VR (V)<br>f = 1 MHz; Tamb = 25 C<br>**----- End of picture text -----**<br> **Fig 4. Diode capacitance as a function of reverse voltage; typical values** © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **7 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** ## **8. Test information** **==> picture [497 x 296] intentionally omitted <==** **----- Start of picture text -----**<br> tr tp<br>t<br>D.U.T.<br>10 %<br>RS = 50 Ω IF SAMPLING + IF trr t<br>OSCILLOSCOPE<br>V = VR + IF × RS Ri = 50 Ω<br>90 % (1)<br>VR<br>mga881<br>input signal output signal<br>(1) IR = 1 mA<br>Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05<br>Oscilloscope: rise time tr = 0.35 ns<br>Fig 5. Reverse recovery time test circuit and waveforms<br>I 1 k Ω 450 Ω<br>I V<br>90 %<br>RS = 50 Ω D.U.T. OSCILLOSCOPE VFR<br>Ri = 50 Ω<br>10 %<br>t t<br>tr tp<br>input signal output signal<br>mga882<br>**----- End of picture text -----**<br> Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle 0.005 **Fig 6. Forward recovery voltage test circuit and waveforms** ## **8.1 Quality information** This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard _Q101 - Stress test qualification for discrete semiconductors_ , and is suitable for use in automotive applications. © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **8 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** ## **9. Package outline** **==> picture [497 x 601] intentionally omitted <==** **----- Start of picture text -----**<br> 1.7 1.2<br>3.0 1.1 1.5 1.0<br>2.8 0.9<br>1<br>3<br>0.55<br>0.45 0.35<br>0.15<br>2.5 1.4 3.6 2.7<br>2.1 1.2 3.4 2.5<br>1 2<br>2<br>0.48 0.15<br>0.38 0.09 0.70 0.25<br>1.9<br>0.55 0.10<br>Dimensions in mm 04-11-04 Dimensions in mm 04-11-29<br>Fig 7. Package outline BAS16 (SOT23/TO-236AB) Fig 8. Package outline BAS16H (SOD123F)<br>1.35 0.80<br>1.15 0.65 0.62 0.50<br>0.55 0.46<br>0.5<br>1<br>0.3<br>0.30 2<br>0.22<br>2.7 1.8 1.02<br>2.3 1.6 0.65<br>0.95<br>0.30<br>0.22 1<br>2<br>0.40 0.25 0.55 cathode marking on top side (if applicable)<br>0.47<br>0.25 0.10<br>Dimensions in mm 04-09-13 Dimensions in mm 03-04-17<br>Fig 9. Package outline BAS16J (SOD323F/SC-90) Fig 10. Package outline BAS16L (SOD882/DFN1006-2)<br>1.8 0.95 1.7 0.6<br>1.4 0.60 1.5 0.5<br>3 0.45 6 5 4<br>0.15<br>0.3<br>0.1<br>1.75 0.9 1.7 1.3<br>1.45 0.7 1.5 1.1<br>pin 1 index<br>1 2 1 2 3<br>0.30 0.25 0.27 0.18<br>0.15 0.10 0.5 0.17 0.08<br>1 1<br>Dimensions in mm 04-11-04 Dimensions in mm 04-11-08<br>Fig 11. Package outline BAS16T (SOT416/SC-75) Fig 12. Package outline BAS16VV (SOT666)<br>**----- End of picture text -----**<br> All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Rev. 6 — 24 September 2014** **Product data sheet** **9 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** **==> picture [497 x 402] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2 1.1<br>1.8 0.8 2.2 1.1<br>1.8 0.8<br>6 5 4 0.45<br>0.15 3 0.45<br>0.15<br>2.2 1.35 2.2 1.35<br>2.0 1.15 pin 1 2.0 1.15<br>index<br>1 2 3 1 2<br>0.3 0.25 0.4 0.25<br>0.65<br>0.2 0.10 0.3 0.10<br>1.3 1.3<br>Dimensions in mm 06-03-16 Dimensions in mm 04-11-04<br>Fig 13. Package outline BAS16VY (SOT363) Fig 14. Package outline BAS16W (SOT323/SC-70)<br>1.35 1.1 0.85 0.65<br>1.15 0.8 0.75 0.58<br>1 0.45 1<br>0.15<br>2.7 1.8 1.65 1.25<br>2.3 1.6 1.55 1.15<br>2 2<br>0.40 0.25 0.34 0.17<br>0.25 0.10 0.26 0.11<br>Dimensions in mm 03-12-17 Dimensions in mm 02-12-13<br>Fig 15. Package outline BAS316 (SOD323/SC-76) Fig 16. Package outline BAS516 (SOD523/SC-79)<br>**----- End of picture text -----**<br> All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** **Rev. 6 — 24 September 2014** **10 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** ## **10. Soldering** **==> picture [372 x 238] intentionally omitted <==** **----- Start of picture text -----**<br> 3.3<br>2.9<br>1.9<br>solder lands<br>solder resist<br>3 1.7 2<br>solder paste<br>0.7 0.6 occupied area<br>(3 × ) (3 × )<br>Dimensions in mm<br>0.5<br>(3 × )<br>0.6<br>(3 × )<br>1 sot023_fr<br>**----- End of picture text -----**<br> **Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB)** **==> picture [377 x 250] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2<br>1.2<br>(2 × )<br>1.4<br>(2 × )<br>solder lands<br>4.6 2.6 solder resist<br>occupied area<br>Dimensions in mm<br>1.4<br>preferred transport direction during soldering<br>2.8<br>4.5 sot023_fw<br>**----- End of picture text -----**<br> **Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB)** © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **11 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** **==> picture [326 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> 4.4<br>4<br>2.9<br>1.6<br>solder lands<br>solder resist<br>2.1 1.6 1.1 1.2<br>solder paste<br>occupied area<br>1.1<br>(2 × )<br>**----- End of picture text -----**<br> **==> picture [66 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions in mm<br>**----- End of picture text -----**<br> **Fig 19. Reflow soldering footprint BAS16H (SOD123F)** **==> picture [348 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> 3.05<br>2.2<br>2.1<br>solder lands<br>solder resist<br>1.65 0.95 0.5 (2 × ) 0.6 (2 × )<br>solder paste<br>occupied area<br>0.5<br>(2 × ) Dimensions in mm<br>0.6<br>(2 × ) sod323f_fr<br>**----- End of picture text -----**<br> **Fig 20. Reflow soldering footprint BAS16J (SOD323F)** © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **12 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** **==> picture [328 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 1.3<br>0.7 R0.05 (8 × )<br>solder lands<br>0.6 0.7 0.8 solder resist<br>0.9<br>(2 × ) (2 × ) (2 × )<br>solder paste<br>occupied area<br>0.3<br>Dimensions in mm<br>(2 × )<br>0.4<br>(2 × )<br>0.5<br>(2 × ) sod882_fr<br>**----- End of picture text -----**<br> **Fig 21. Reflow soldering footprint BAS16L (SOD882/DFN1006-2)** **==> picture [304 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2<br>1.7<br>solder lands<br>solder resist<br>0.85 1 2<br>solder paste<br>0.5<br>(3 × ) occupied area<br>Dimensions in mm<br>0.6<br>(3 × )<br>1.3 sot416_fr<br>**----- End of picture text -----**<br> **Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75)** © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **13 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** **==> picture [380 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> 2.75<br>2.45<br>2.1<br>1.6<br>solder lands<br>0.4<br>(6 × ) 0.25 0.3<br>0.538 (2 × ) (2 × ) placement area<br>0.55<br>2 1.7 1.075<br>(2 × ) solder paste<br>occupied area<br>0.325 0.375<br>(4 × ) (4 × ) Dimensions in mm<br>1.7<br>0.45 0.6<br>(4 × ) (2 × )<br>0.5 0.65<br>(4 × ) (2 × ) sot666_fr<br>**----- End of picture text -----**<br> **Fig 23. Reflow soldering footprint BAS16VV (SOT666)** **==> picture [324 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> 2.65<br>solder lands<br>2.35 1.5 0.6 0.5 0.4 (2 × )<br>(4 × ) (4 × ) solder resist<br>solder paste<br>0.5 0.6<br>occupied area<br>(4 × ) (2 × )<br>0.6<br>Dimensions in mm<br>(4 × )<br>1.8 sot363_fr<br>**----- End of picture text -----**<br> **Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88)** © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **14 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** **==> picture [372 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5<br>solder lands<br>4.5 0.3 2.5<br>solder resist<br>occupied area<br>1.5<br>Dimensions in mm<br>preferred transport<br>1.3 1.3 direction during soldering<br>2.45<br>5.3 sot363_fw<br>**----- End of picture text -----**<br> **Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88)** **==> picture [325 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 2.65<br>1.85<br>1.325<br>solder lands<br>2 solder resist<br>2.35 [0.6] 3 1.3 solder paste<br>(3 × )<br>0.5 occupied area<br>1<br>(3 × )<br>Dimensions in mm<br>0.55<br>(3 × ) sot323_fr<br>**----- End of picture text -----**<br> **Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70)** © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **15 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** **==> picture [396 x 376] intentionally omitted <==** **----- Start of picture text -----**<br> 4.6<br>2.575<br>1.425<br>(3 × )<br>solder lands<br>solder resist<br>occupied area<br>3.65 2.1 1.8 Dimensions in mm<br>09 preferred transport<br>(2 × ) direction during soldering<br>sot323_fw<br>Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70)<br>3.05<br>2.1<br>solder lands<br>solder resist<br>1.65 0.95 0.5 (2 × ) 0.6 (2 × )<br>solder paste<br>occupied area<br>2.2 Dimensions in mm<br>0.5<br>(2 × )<br>0.6<br>(2 × ) sod323_fr<br>**----- End of picture text -----**<br> **Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76)** © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **16 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** **==> picture [347 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>2.9<br>1.5 (2 × )<br>solder lands<br>solder resist<br>occupied area<br>1.2<br>2.75 (2 × ) Dimensions in mm<br>preferred transport<br>direction during soldering<br>sod323_fw<br>**----- End of picture text -----**<br> **Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76)** **==> picture [342 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 2.15<br>1.4<br>solder lands<br>solder resist<br>0.5 0.6<br>1.2 solder paste<br>(2×) (2×)<br>occupied area<br>Dimensions in mm<br>0.4<br>(2×)<br>0.5<br>sod523_fr<br>(2×)<br>**----- End of picture text -----**<br> **Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79)** © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **17 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** ## **11. Revision history** |**Table 9.**<br>**Revision history**|**Table 9.**<br>**Revision history**|**Table 9.**<br>**Revision history**|**Table 9.**<br>**Revision history**|**Table 9.**<br>**Revision history**| |---|---|---|---|---| |**Document ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |BAS16_SER_6|20140924|Product data sheet|-|BAS16_SER_5| |Modifications:|**•** Section 1.2“<br>Features and benefits<br>”<br>:updated<br>**•** Section 4“<br>Marking<br>”<br>:updated<br>**•** Table 6“<br>Limiting values<br>”<br>:updated<br>**•** Section 8“<br>Test information<br>”<br>:updated<br>**•** Section 12“<br>Legal information<br>”<br>:updated|||| |BAS16_SER_5|20080825|Product data sheet|-|BAS16_4<br>BAS16H_1<br>BAS16J_1<br>BAS16L_1<br>BAS16T_1<br>BAS16VV_BAS16VY_3<br>BAS16W_4<br>BAS316_4<br>BAS516_1| |BAS16_4|20011010|Product specification|-|BAS16_3| |BAS16H_1|20050415|Product data sheet|-|-| |BAS16J_1|20070308|Product data sheet|-|-| |BAS16L_1|20030623|Product specification|-|-| |BAS16T_1|19980120|Product specification|-|-| |BAS16VV_BAS16VY_3|20070420|Product data sheet|-|BAS16VV_BAS16VY_2| |BAS16W_4|19990506|Product specification|-|BAS16W_3| |BAS316_4|20040204|Product specification|-|BAS316_3| |BAS516_1|19980831|Product specification|-|-| © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **18 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** ## **12. Legal information** ## **12.1 Data sheet status** |**Document status[1]**<br>**[2]**|**Product statu**~~**s**~~**[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **12.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Product specification —** The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ## **12.3 Disclaimers** **Limited warranty and liability —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use in automotive applications —** This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. **Terms and conditions of commercial sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. BAS16_SER © NXP Semiconductors N.V. 2014. All rights reserved. All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **Product data sheet** **19 of 21** **BAS16 series** **NXP Semiconductors** ## **High-speed switching diodes** **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Translations —** A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. ## **12.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **13. Contact information** For more information, please visit: **http://www.nxp.com** For sales office addresses, please send an email to: **salesaddresses@nxp.com** © NXP Semiconductors N.V. 2014. All rights reserved. BAS16_SER All information provided in this document is subject to legal disclaimers. **Rev. 6 — 24 September 2014** **Product data sheet** **20 of 21** **BAS16 series** **NXP Semiconductors** **High-speed switching diodes** ## **14. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 2| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 3**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**6**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 5**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6**| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8**| |8.1|Quality information . . . . . . . . . . . . . . . . . . . . . . 8| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**10**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18**| |**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 19**| |12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19| |12.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19| |12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19| |12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20| |**13**|**Contact information. . . . . . . . . . . . . . . . . . . . . 20**| |**14**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP Semiconductors N.V. 2014.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 24 September 2014 Document identifier: BAS16_SER**
Updated at April 28, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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