BAS116TT1G

BAS116TT1G 

## Switching Diode 

## **Features** 

- Low Leakage Current Applications 

- Medium Speed Switching Times 

- Available in 8 mm Tape and Reel 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **http://onsemi.com** 

3 1 CATHODE ANODE 

**MAXIMUM RATINGS** (TA = 25 ° C) 

**Rating Symbol Max Unit MARKING DIAGRAM** Continuous Reverse Voltage VR 75 V Peak Forward Current IF 200 mA 3 **CASE 463** Peak Forward Surge Current IFM(surge) 500 mA **SOT−416** AE M **STYLE 2** 1[2] ~~===~~ **THERMAL CHARACTERISTICS** 1 ee **Characteristic Symbol Max Unit** AE = Specific Device Code Total Device Dissipation, PD M = Date Code FR−4 Board (Note 1) 225 mW = Pb−Free Package TA = 25 ° C Derated above 25 ° C 1.8 mW/ ° C Thermal Resistance, R JA 555 ° C/W **ORDERING INFORMATION** Junction−to−Ambient (Note 1) Total Device Dissipation, PD **Device Package Shipping**[†] ~~Te~~ FR−4 Board (Note 2) 360 mW ~~-~~ TA = 25 ° C BAS116TT1G SOT−416 3000 / Tape & Reel Derated above 25 ° C 2.9 mW/ ° C (Pb−Free) ~~LE~~ Thermal Resistance, R JA 345 ° ~~|)~~ C/W ~~eee~~ †For information on tape and reel specifications, including part orientation and tape sizes, please Junction−to−Ambient (Note 2) refer to our Tape and Reel Packaging Specifications Junction and Storage TJ, Tstg −55 to ° C Brochure, BRD8011/D. Temperature Range +150 ~~ee~~ 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 

2. FR−4 @ 1.0 × 1.0 Inch Pad 

Publication Order Number: **BAS116TT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2011 **September, 2011 − Rev. 1** 

**BAS116TT1G** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

**==> picture [503 x 332] intentionally omitted <==**

**----- Start of picture text -----**<br>
Characteristic Symbol Min Max Unit<br>OFF CHARACTERISTICS<br>Reverse Breakdown Voltage (IBR = 100  � Adc) V(BR) 75 − Vdc<br>Reverse Voltage Leakage Current (VR = 75 Vdc) IR − 5.0 nAdc<br>Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150 ° C) − 80<br>Forward Voltage (IF = 1.0 mAdc) VF − 900 mV<br>Forward Voltage (IF = 10 mAdc) − 1000<br>Forward Voltage (IF = 50 mAdc) − 1100<br>Forward Voltage (IF = 150 mAdc) − 1250<br>Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD − 2.0 pF<br>Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr − 3.0 � s<br>820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>DUT 90%<br>50  �  Output 50 � INPUT IR iR(REC) = 1.0 mA<br>Pulse SAMPLING VR OUTPUT PULSE<br>Generator OSCILLOSCOPE INPUT SIGNAL (IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [489 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,000 1.2<br>TA = 25 ° C<br>1.0<br>100<br>0.8<br>150 ° C 25 ° C −55 ° C<br>10 0.6<br>0.4<br>1<br>0.2<br>0.1 0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 70 80<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>, FORWARD CURRENT (mA)IF , TOTAL CAPACITANCE (pF)CT<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**==> picture [95 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. Capacitance<br>**----- End of picture text -----**<br>


**http://onsemi.com** 

**2** 

**BAS116TT1G** 

## **PACKAGE DIMENSIONS** 

**==> picture [70 x 29] intentionally omitted <==**

**----- Start of picture text -----**<br>
SC−75/SOT−416<br>CASE 463−01<br>ISSUE F<br>**----- End of picture text -----**<br>


**==> picture [423 x 349] intentionally omitted <==**

**----- Start of picture text -----**<br>
−E− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>TT Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>2<br>MILLIMETERS INCHES<br>3<br>e −D− DIM MIN NOM MAX MIN NOM MAX<br>A 0.70 0.80 0.90 0.027 0.031 0.035<br>1 A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 3 PL<br>b 0.15 0.20 0.30 0.006 0.008 0.012<br>0.20 (0.008) M D C 0.10 0.15 0.25 0.004 0.006 0.010<br>i HE 0.20 (0.008) E D 1.55 1.60 1.65 0.059 0.063 0.067<br>E 0.70 0.80 0.90 0.027 0.031 0.035<br>e 1.00 BSC 0.04 BSC<br>a— f==SSE= L 0.10 0.15 0.20 0.004 0.006 0.008<br>HE 1.50 1.60 1.70 0.061 0.063 0.065<br>C STYLE 2:<br>A PIN 1. ANODE<br> 2. N/C<br> 3. CATHODE<br>mes L A1<br>SOLDERING FOOTPRINT*<br>0.356<br>0.014<br>a<br>1.803 0.787<br>0.071 0.031<br>—|, mm __<br>0.508 a<br>0.020 1.000<br>a 0.039<br>SCALE 10:1 mm<br>(—) inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**ON Semiconductor Website** : **www.onsemi.com** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative 

## **LITERATURE FULFILLMENT** : 

**BAS116TT1/D** 

**http://onsemi.com 3**