BAS116E6327HTSA1

**BAS116...** 

## **Silicon Low Leakage Diode** 

- Low-leakage applications 

- Medium speed switching times 

- Pb-free (RoHS compliant) package[1)] 

- Qualified according AEC Q101 

## **BAS116** 

||ee|ee||
|---|---|---|---|
|**Parameter**|**Symbol**<br>ee|**Value**<br>ee|**Unit**|
|Diode reverse voltage|_V_R<br>ee<br>a <br>ee|80<br>ee<br> eee<br>eee|V|
|Peak reverse voltage|_V_RM<br>ee|85<br>eee||
|Forward current|_I_F<br>ee|250<br> eee|mA|
|Non-repetitive peak surge forward current<br>_t_= 1 µs<br>_t_= 1 s|_I_FSM<br>Pf|4.5<br>0.5<br>Pf|A|
|Total power dissipation<br>_T_S ≤54°C|_P_tot|370|mW|
|Junction temperature|_T_j<br>a <br>~~ee~~|150<br> eee<br>~~eee~~|°C|
|Storage temperature|j<br>_T_stg<br>~~ee~~|-65 ... 150<br>~~eee~~||



1Pb-containing package may be available upon special request 

> 2For calculation of _R_ thJA please refer to Application Note Thermal Resistance 

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**BAS116...** 

## ° **Electrical Characteristics** at _T_ A = 25 C, unless otherwise specified 

|**Electrical Characteristics**at_T_A =25°C, unless o|therwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|**Parameter**|<br>**Symbol**|<br>**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Breakdown voltage<br>_I_(BR)= 100µA|_V_(BR)|85|-|-|V|
|Reverse current<br>_V_R= 75 V<br>_V_R= 75 V,_T_A= 150 °C|_I_R|-<br>-|-<br>-|5<br>80|nA|
|Forward voltage<br>_I_F= 1 mA<br>_I_F= 10 mA<br>_I_F= 50 mA<br>_I_F= 150 mA|_V_F|-<br>-<br>-<br>-|-<br>-<br>-<br>-|900<br>1000<br>1100<br>1250|mV|
|**AC Characteristics**||||||
|Diode capacitance<br>_V_R= 0 V,_f_= 1 MHz|_C_T|-|2|-|pF|
|Reverse recovery time<br>_I_F= 10 mA,_I_R= 10 mA, measured at_I_R= 1mA ,<br>_R_L= 100Ω|<br>_t_rr|-|0.6|1.5|µs|



Test circuit for reverse recovery time 

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D.U.T.<br>ΙF Oscillograph<br>EHN00022<br>**----- End of picture text -----**<br>


Puls generator: _t_ p = 10µs, _D_ = 0.05, _t_ r = 0.6ns, _R_ i = 50Ω Oscillograph: _R_ = 50Ω , _t_ r = 0.35ns, _C_ ≤ 1pF 

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**BAS116...** 

## **Reverse current** _I_ R = ƒ ( _T_ A) 

## _V_ R = Parameter 

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10 2 BAS 116 EHB00053<br>nA<br>ΙR max<br>10 [1]<br>10 2<br>typ<br>10 -1<br>10 -2<br>10 -3<br>0 50 100 ˚C 150<br>T A<br>**----- End of picture text -----**<br>


**Forward current** _I_ F = ƒ ( _V_ F) 

## _T_ A = 25°C 

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BAS 116 EHB00054<br>150<br>ΙF<br>mA<br>100<br>typ max<br>50<br>0<br>0 0.5 1.0 V 1.5<br>V F<br>**----- End of picture text -----**<br>


## **Forward Voltage** _V_ F = ƒ ( _T_ A) _I_ F = Parameter 

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BAS 116 EHB00056<br>1.5<br>V<br>V F<br>1.0 ΙF = 150 mA<br>50 mA<br>10 mA<br>1 mA<br>0.1 mA<br>0.5<br>0<br>0 50 100 ˚C 150<br>T A<br>**----- End of picture text -----**<br>


## **Forward current** _I_ F = ƒ ( _T_ S) BAS116 

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300<br>mA<br>250<br>225<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 15 30 45 60 75 90 105 120 °C 150<br>T S<br>I F<br>**----- End of picture text -----**<br>


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**BAS116...** 

## **Permissible Puls Load** _R_ thJS = ƒ ( _t_ p) **Permissible Pulse Load** _I_ Fmax/ _I_ FDC = ƒ ( _t_ p) 

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10 3<br>10 2<br>10 1<br>D = 0,5<br>0,2<br>0,1<br>0,05<br>0,02<br>10 0  0,01<br>0,005<br>0<br>10 -1<br>10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>T P<br>thJS<br>R<br>**----- End of picture text -----**<br>


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10 2<br>-<br>D = 0<br>0.005<br>0.01<br>0.02<br>0.05<br>1  0.1<br>10<br>0.2<br>0.5<br>10 0<br>10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>T P<br>I /FDCFmax<br>I<br>**----- End of picture text -----**<br>


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**Package SOT23** 

**BAS116...** 

## Package Outline 

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1±0.1<br>2.9 ±0.1 0.1 MAX.<br>B<br>3<br>1 2<br>+0.1 1)<br>0.4 -0.05 A<br>C<br>0.95<br>1.9<br>0.25 M B C 0.2 M A<br>1) Lead width can be 0.6 max. in dambar area<br>0.8<br>0.8 1.2<br>Manufacturer<br>2005, June<br>EH s Date code (YM)<br>Pin 1 BCW66<br>Type code<br>0...8˚<br>0.08...0.15<br>0.15 MIN.<br> ±0.15 ±0.1<br>2.4 1.3<br>10˚ MAX. 10˚ MAX.<br>0.9<br>1.3<br>0.9<br>**----- End of picture text -----**<br>


## Foot Print 

## Marking Layout (Example) 

## Standard Packing 

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 

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4<br>0.9 0.2<br>Pin 1 3.15 1.15<br>2.13 2.65<br>8<br>**----- End of picture text -----**<br>


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**BAS116...** 

Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. 

## **Attention please!** 

The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( **www.infineon.com** ). 

## **Warnings** 

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. 

Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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