BA89202VH6127XTSA1
RF / Pin Diode, Single, 0.36 ohm, 35 V, SC-79, 2 Pin, 0.85 pF
- Manufacturer: INFINEON
- Product type: RF / Pin Diodes
- Diode Configuration:Single; Resistance @ If:0.36ohm; Breakdown Voltage Vbr:35V; Diode Case Style:SC-79; No. of Pins:2 Pin; Total Capacitance Ct:0.85pF; Forward Current If(AV):100mA;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Diode Mounting: Surface Mount
- Forward Current: 100mA
- Forward Voltage: 1V
- Resistance @ If: 0.36ohm
- Reverse Voltage: 35V
- Diode Case Style: SC-79
- Diode Capacitance: 0.85pF
- Power Dissipation: -
- Diode Configuration: Single
- Operating Temperature Max: 125°C
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.041 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**BA592/BA892...** ## **Silicon RF Switching Diode** - For band switching in TV/VTR tuners and mobile applications - Very low forward resistance (typ. 0.45 Ω @ 3 mA) - Small capacitance - Pb-free (RoHS compliant) package - Qualified according AEC Q101 ## **BA592 BA892/-02L BA892-02V** |**Type**|**Package**|**Configuration**|**_L_**~~**S**~~(nH)|**Marking**| |---|---|---|---|---| |BA592<br>BA892<br>BA892-02L<br>BA892-02V|SOD323<br>SCD80<br>TSLP-2-1<br>SC79|single<br>single<br>single, leadless<br>single|~~**S**~~<br>1.8<br>0.6<br>0.4<br>0.6|blue S<br>AA<br>AA<br>A| ## **Maximum Ratings** at _T_ A = 25°C, unless otherwise specified |**Maximum Ratingsgss**at_T_A = 25°C, unless otherwise specified= 25°C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|A = 25°C, unless otherwise specified= 25°C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|A = 25°C, unless otherwise specified= 25°C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Diode reverse voltage|_V_R|35|V| |Forward current|_I_F|100|mA| |Junction temperature|_T_J|150|°C| |Operatingtemperature range|_T_op|-55 ... 125|| |Storage temperature|op<br>_T_Stg|-55 ... 150|| 2011-07-21 1 **BA592/BA892...** |**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction - soldering point1)<br>BA592<br>BA892, BA892-02V<br>BA892-02L|_R_thJS|≤135<br>≤120<br>≤70|K/W| ## **Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified |**Electrical Characteristics**at_T_A= 25°C,unless|otherwise sp|ecified|ecified|ecified|| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**DC Characteristics**|||||| |Reverse current<br>_V_R= 20 V|_I_R|-|-|20|nA| |Forward voltage<br>_I_F= 100 mA|_V_F|-|-|1|V| > 1For calculation of _R_ thJA please refer to Application Note Thermal Resistance 2011-07-21 2 **BA592/BA892...** ## **Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified |**Electrical Characteristics**at_T_A= 25°C, unless|otherwise sp|ecified|ecified|ecified|| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**| |||**min.**|**typ.**|**max.**|| |**AC Characteristics**|||||| |Diode capacitance<br>_V_R= 1 V,_f_= 1 MHz<br>_V_R= 3 V,_f_= 1 MHz<br>_V_R= 0 V,_f_= 100 MHz|_C_T|0.65<br>0.6<br>-|0.92<br>0.85<br>1|1.4<br>1.1<br>-|pF| |Reverse parallel resistance<br>_V_R= 0 V,_f_= 100 MHz|_R_P|-|100|-|kΩ| |Forward resistance<br>_I_F= 3 mA,_f_= 100 MHz<br>_I_F= 10 mA,_f_= 100 MHz|_r_f|-<br>-|0.45<br>0.36|0.7<br>0.5|Ω| |Charge carrier life time<br>_I_F= 10 mA,_I_R= 6 mA, measured at_I_R= 3mA,<br>_R_L= 100Ω|τ rr|-|120|-|ns| |I-region width|_W_I|-|3|-|µm| |Insertion loss1)<br>_I_F= 0.1 mA,_f_= 1.8 GHz<br>_I_F= 3 mA,_f_= 1.8 GHz<br>_I_F= 10 mA,_f_= 1.8 GHz|_I_L|-<br>-<br>-|0.1<br>0.5<br>0.4|-<br>-<br>-|dB| |Isolation1)<br>_V_R= 0 V,_f_= 100 MHz<br>_V_R= 0 V,_f_= 470 MHz<br>_V_R= 0 V,_f_= 1 GHz|_I_SO|-<br>-<br>-|23.5<br>10.5<br>5.5|-<br>-<br>-|| > 1BA892-02L in series configuration, _Z_ = 50Ω 2011-07-21 3 **BA592/BA892...** ## **Diode capacitance** _C_ T = ƒ (VR) ## _f_ = Parameter **==> picture [227 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>pF<br>1.2<br>1 MHz ... 1 GHz<br>0.8<br>0.4<br>0<br>0 5 10 15 20 V 30<br>V R<br>T<br>C<br>**----- End of picture text -----**<br> ## **Forward resistance** _r_ f = ƒ ( _I_ F) ## _f_ = 100MHz **==> picture [234 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2<br>Ohm<br>10 1<br>10 0<br>10 -1<br>10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] mA 10 [2 ]<br>I F<br>r f<br>**----- End of picture text -----**<br> **Reverse parallel resistance** _R_ P = ƒ( _V_ R) _f_ = Parameter **==> picture [227 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3<br>KOhm<br>100 MHz<br>10 2<br>10 1<br>1 GHz<br>10 0<br>10 -1<br>0 5 10 15 20 V 30<br>V R<br>p<br>R<br>**----- End of picture text -----**<br> **Forward current** _I_ F = ƒ ( _V_ F) _T_ A = Parameter **==> picture [228 x 272] intentionally omitted <==** **----- Start of picture text -----**<br> 10 0<br>A<br>10 -1<br>10 -2<br>10 -3<br>-40 °C<br>-4 25 °C<br>10<br>85 °C<br>125 °C<br>10 -5<br>10 -6<br>0 0.2 0.4 0.6 0.8 V 1.2<br>V F<br>I F<br>**----- End of picture text -----**<br> 2011-07-21 4 **BA592/BA892...** ## **Insertion loss** _I_ L = -| _S_ 21|[2] = ƒ( _f_ ) ## _I_ F = Parameter BA892-02L in series configuration, _Z_ = 50Ω **==> picture [225 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 0<br>dB<br>10 mA<br>-0.2 3 mA<br>1 mA<br>0.1 mA<br>-0.3<br>-0.4<br>0 0.5 1 1.5 2 GHz 3<br>f<br>2|21<br>S |<br>**----- End of picture text -----**<br> ## **Isolation** _I_ SO = -| _S_ 21|[2] = ƒ(f) ## _V_ R = Paramter BA892-02L in series configuration, _Z_ = 50Ω **==> picture [225 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 0<br>dB<br>-10 0 V<br>1 V<br>10 V<br>-15<br>-20<br>-25<br>-30<br>0 0.5 1 1.5 2 GHz 3<br>f<br>2|21<br>S |<br>**----- End of picture text -----**<br> 2011-07-21 5 **Package SC79** **BA592/BA892...** **==> picture [495 x 693] intentionally omitted <==** 2011-07-21 6 **Package SCD80** **BA592/BA892...** ## Package Outline **==> picture [211 x 464] intentionally omitted <==** **----- Start of picture text -----**<br> 0.2 M A<br>+0.05<br>0.8 ±0.1 0.13 -0.03<br>A<br>2<br>Cathode 1<br>marking 0.3 ±0.05 0.7 ±0.1<br>0.35<br>2005, June<br>Date code<br>BAR63-02W<br>Type code<br>Cathode marking<br>Laser marking<br>±0.1 ˚MAX.10 ˚7˚±1.5 ±0.1<br>1.7 1.3<br>±0.05<br>0.2<br>0.35<br>1.45<br>**----- End of picture text -----**<br> Foot Print Marking Layout (Example) ## Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch) Reel ø330 mm = 10.000 Pieces/Reel **==> picture [256 x 101] intentionally omitted <==** **----- Start of picture text -----**<br> Standard Reel with 2 mm Pitch<br>4 2 0.2<br>Cathode 0.4 Cathode 0.7<br>marking 0.9 marking<br>1.45<br>8<br>2.5<br>**----- End of picture text -----**<br> 2011-07-21 7 **BA592/BA892...** Date Code marking for discrete packages with one digit (SCD80, SC79, SC75[1)] ) CES-Code |Month|2003|2004|2005|2006|2007|2008|2009|2010|2011|2012|2013|2014| |---|---|---|---|---|---|---|---|---|---|---|---|---| |01|a|p|A|P|a|p|A|P|a|p|A|P| |02|b|q|B|Q|b|q|B|Q|b|q|B|Q| |03|c|r|C|R|c|r|C|R|c|r|C|R| |04|d|s|D|S|d|s|D|S|d|s|D|S| |05|e|t|E|T|e|t|E|T|e|t|E|T| |06|f|u|F|U|f|u|F|U|f|u|F|U| |07|g|v|G|V|g|v|G|V|g|v|G|V| |08|h|x|H|X|h|x|H|X|h|x|H|X| |09|j|y|J|Y|j|y|J|Y|j|y|J|Y| |10|k|z|K|Z|k|z|K|Z|k|z|K|Z| |11|l|2|L|4|l|2|L|4|l|2|L|4| |12|n|3|N|5|n|3|N|5|n|3|N|5| - 1) New Marking Layout for SC75, implemented at October 2005. . 2011-07-21 8 **Package SOD323** **BA592/BA892...** **==> picture [494 x 693] intentionally omitted <==** 2011-07-21 9 **Package TSLP-2-1** **BA592/BA892...** **==> picture [494 x 693] intentionally omitted <==** 2011-07-21 10 **BA592/BA892...** ## **Edition 2009-11-16** ## **Published by Infineon Technologies AG 81726 Munich, Germany** ## **2009 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2011-07-21 11
Updated at April 22, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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