AVS1ACP08
Triac, 600 V, 12 A, DIP, 105 A
- Manufacturer: STMICROELECTRONICS
- Product type:
- Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):12A; Triac Case Style:DIP; Gate Trigger Current Max (QI), Igt:-; Gate Trigger Voltage Max Vgt:-; Peak Gate P
- MSL: -
- SVHC: No SVHC (17-Dec-2015)
- No. of Pins: 8Pins
- Product Range: -
- Triac Case Style: DIP
- Thyristor Mounting: Through Hole
- Holding Current Max: -
- On State RMS Current: 12A
- Peak On State Voltage: 1.75V
- Gate Trigger Voltage Max: -
- Operating Temperature Max: 70°C
- Peak Non Repetitive Surge Current: 105A
- Peak Repetitive Off State Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 3.46 € |
| Current stock | 10+ |
| Lead time | 30 days |
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~» MICROELECTRONICS<br>**----- End of picture text -----**<br>
## AVS10
## AUTOMATIC VOLTAGE SWITCH (SMPS < 300W)
## CONTROLLER
a 50/60Hz FULL COMPATIBILITY
- a INTEGRATED VOLTAGE REGULATOR
- a TRIGGERING PULSE TRAIN OF THE TRIAC
- a PARASITIC FILTER » LOW POWER CONSUMPTION
TRIAC « HIGH EFFICIENCY AND SAFETY SWITCHING « UNINSULATED PACKAGE : AVS10CB » INSULATED PACKAGE 2500V(RMQ : AVS10CBI » VDRM = + 600V = IT(RMS): 8A
## DESCRIPTION
The AVS10 kit is an automatic mains selector (110/220V AC) to be used in SMPS < 300 W. It
- is composed of 2 devices :
- ¢ The Controller is optimized for low consumption and high security triggering of the triac. When connected to Vss, the mode input activates an additional option. If the main power drops from 220V to 110V, the triac control remains locked to the 220V mode and avoids anystoredhigh to 220V.voltage spike when the voltage is reWhen connected to Vpp, the mode input desactivates this option.
- e The TRIAC is specially designed for this application. An optimization between sensitivity and dynamic parameters of the triac gate highly reduces the losses of supply resistor and allows excellent immunity against disturbances.
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## PIN CONNECTION
March 1995
1/8
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AVS10
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|<br> DIAGRAM<br>AVS1ACP06 MODE AVS10CB<br>Vv = — — AVS10CBI<br>Peak Voltage __|Parasitig mous E<br>H Detector Va G :<br>OSC/IN: ‘ontrolle wecrtrccsncenccne aM Seesrece anand<br>Osc/our |_ Oscillator qj DD = .<br>**----- End of picture text -----**<br>
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BLOCK DIAGRAM<br>**----- End of picture text -----**<br>
ABSOLUTE MAXIMUM RATINGS CONTROLLER AVS1ACP08
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||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|=|Oe|
|||Vi/VO|Supply_|1/Ovoltage voltage||[vss-05-12||||05os||||Vv|||
|||igTsig__||tvOcuret Storage|Temperature|CC|™—~—“‘CSCSC*drT:CSCwtSsT||60|||+150toma||||
|Operating Temperature|code|_"C|*|||oo|||70||e|
|TRIAC AVS10CB/|AVS10CBI|Tj|=|+25°C|(unless otherwise|specified)|
|smoot [||Paramater||v||
|IT(RMS)|(360°RMS conductionon-state|currentangle)|AVS10CB ||Tc =80°C|A|
|AVS10CBI}|Tc|=70°C|
|I|Non repetitive|surge peak on-state|current|t=|8.3ms|85|A|
|TSM||(7j|initial = 25°C|)|t=|10ms|80|
|[a|fame|SSC~i|tom |i|
|Repetitive|
|a|.|
|di/dt|Critical rate|of|rise|of on-state|current (1)|F|= 50Hz|Aus|
|Non|
|Tstg|Storage Temperature|-40|+|150|°C|
|Tj|Operating Junction|Temperature|0|+|110|
|(1)|Gate|supply|:IG|=|100mA|-|di/dt=|1Ajs|*|For|either|polarity|of|electrode|A2|voltage|with|reference|to electrode|At|
**----- End of picture text -----**<br>
(2) Tj = 110°C
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AVS10
## THERMAL RESISTANCES
TRIAC AVS10CB / AVS10CBI [sve [emer| vate —*| | a Rth[(-c)] 3 **0**[DC][ |][ Junction-to-case] be[for][ DC] secs] as °C/W Pmesrelimmwmmee Rth (+e) AC | Junction-to-case for 360° conduction angle( F = 50Hz) °C/W a
DC GENERAL ELECTRICAL CHARACTERISTICS TRIAC AVS10CB / AVS10CBI |paVan |Vp=VpAM RL=33k0 Pulseduration> 2ous_| T=Fotoro | 02 | |v _| | Vim" |tm=11A_tp=toms nar | Ts Tv VpRM rated Gate open | me2c | | to | ee
* For either polarity of electrode A2 voltage with reference to elactrode Ai.
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AVS10
Fig.1 :Maximum RMS power dissipation versus RMS onstate current (F = 60Hz).
(Curves are cut off by (di/dt)c limitation)
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P (w)<br>()<br>! '<br>8 Ol+ 120° Se<br>as so| La|<br>ae iezZ4aneA<br>2 “LE| | |<br>Le<br>Lae<br>0 1 2 3 4 5 6 7 B<br> 3 :Correlation between maximum mean power power dissipa-<br>and maximum allowable temperatures (Tamb<br>for different thermal different thermal thermal resistances heatsink + +<br>P (Ww) Tcase (°C)<br>SUnNns<br>106 7.<br>NB cr<br>INNESNX COX<br>LEONA”<br>4 7 ve \<br>Jt | | SA | Fe<br>pmeco<br>oOo 20 40 60[|80 100NUT[N 120 140110<br>**----- End of picture text -----**<br>
Fig. 3 :Correlation between maximum mean power power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal different thermal thermal resistances heatsink + + contact (AVS10CBI).
Fig. 2 :Correlaton between maximum mean power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (AVS10CB).
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P (Ww) Tease (°C)<br>12 o<br>»<br>gis PppH 75°CHW||<br>Bawa<br>aN4 AA 100<br>BNE<br>27— Tamb (°C) NN<br>‘ami<br>6 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br>
Fig. 4 :Non repetitive surge peak on-state current for a sinusoidal pulse with width : t< 10ms, and corresponding value of I4t.
Fig.5 :On-state characteristics (maximum values).
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AVS10
## DC GENERAL ELECTRICAL CHARACTERISTICS (continued) CONTROLLER AVS1ACPO08 Toper = 25°C = (unless otherwise specified)
||||||pwn<br>| typ | Max|pwn<br>| typ | Max||
|---|---|---|---|---|---|---|---|
||ISS (pin 1) (Vreg)<br>(@ Vss=9V)|ee|||cae|ee||
||ISS (pin 1)|||||||
||(@ triacgatenon|Quiescentcurrent||||0.7|mA|
||connected)|||||||
||f (pin3)|||||||
||(@ R =91kQ)|Oscillatorfrequency|||42|||
||(G = 100pF)|||||||
|(1)|Vm(pin8) Vth (3)|= |Zero-crossingdetectionhigh-threshold|||ee|ee||
|||.<br> wwimonn|VIL|(4)|||waves|0.3Vreg<br> | | OE]||
||:|VOL|(lvG=25mA)|||650|mV|
NOTES :
(1) : This value gives a typical noise immunity on the zero-crossing detectionof 110mV x 1018/18 = 6.20V on the main supply (2) : See following diagram
(8) : Voltage referred to VSS
(4) : Voltage referred to VDD
## POWER-ON AND POWER-OFF RESET BEHAVIOUR
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Power-on Reset<br>Undetermined reset Normal operation power-off Undetermined<br><4tt1<br>OV OV<br>-2.7V -2.7V<br>Vrazit<br>Vrazht<br>Vreg = Vss- Vpp<br>—____________(@y SGS-THOMSON_CO<br>SE iiie032 CONICS<br>**----- End of picture text -----**<br>
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AVS10
## TYPICAL APPLICATION
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O<br>110V L\ | O<br>or OK NTC<br>220V<br>©<br>6 AVS10CB :<br>IN RY option’ Ypp or AVS10CBi<br>i Zim || 20 Mpg _<br>1% Vu 7 goon 7%!<br>x Ro AVS1ACP08<br>9.1K 0 fekn | 5 :<br>[| 16V<br>100pF 5%<br>Sane17-5 |, SOOO<br>ORDERING INFORMATION<br>AVS10<br>CONTROLLER TRIAC<br>AVS 1A C P08 AVS 10 C BI<br>VOLTAGE” | vOLTaee” INSULATED Suffix<br>DIP8<br>PACKAGE<br>B:<br>IDENTIFICATION IDENTIFICATION UNINSULATED T0220<br>[:] O- O70 °C<br>OPERATING [TEMPERATURE] OPERATING TEMPERATURE :<br>**----- End of picture text -----**<br>
## ORDERING INFORMATION
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## PACKAGE MECHANICAL DATA
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8 PINS - PLASTIC DIP<br>**----- End of picture text -----**<br>
## CONTROLLER
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as| [DIMENSIONS] —<br>— fas for [ [ Jooer[<br>THT | fp [125 | [165 loose] oss<br>z | | lb1__ joss | |o.50 |o.015| [0.020 |<br>z | iD |) | fos | one |<br>le | jes | | joss] |<br>| p | feale || jacai7s2 | | fo ts oo ]f |<br> (Plastic) TRIAG<br>A et| [DIMENSIONS] ma —<br>G J [A |10.20 {10.40 [0.401 {0.407 _|<br>a H | Min. | Max. | Min. | Max._|<br>| IB 114.23 |15.87 {0.560 [0.625 |<br>4-574 B -}}. IClo |12.70 [{s.85_|6.85] |14.70_}0.500[0.230 {0.579|0.270 ||<br>Ceee<br>IG__|254[3.00 {0.100 |o.119 |<br>i355[4.00 [0.139 [0.158 |<br>P c L__jo.35_|o.65<br>iM J210 [270 [008 Jox07—<br>| |0.013 {0.026 |<br>“ IN _|458_ [5.58 |o1s [o22 |<br>lo__joso_|120[0.031 [o.048_|<br>[p___|o64_[o.96[0.025 [0.038 _|<br>**----- End of picture text -----**<br>
TO220AB (Plastic)
Cooling method :C Marking : Type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N.
## —___—_§_———_{j7 SGS-THOMson —
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Updated at June 10, 2026
STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.
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