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AVR-M1608C270MTAAB
VARISTOR, 1608, 0.05J, 27V
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: TDK
- Product type: TVS Varistors
- Series:AVR-M; Varistor Type:ESD Protector; Peak Surge Current @ 8/20µs:10A; Varistor Case:1608; Clamping Voltage Vc Max:54V; Peak Energy (10/1000uS):50mJ; Voltage Rating V DC:17V; Operating Te
| Delivery and price | |
|---|---|
| Units per pack | 16000 |
| Price | 0.044 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
September 2014
Chip Varistors Countermeasure for surge voltage and static electricity
## AVRseries
**AVRM0402/AVRL0402 0402 [01005 inch]* AVRM0603/AVRL0603 0603 [0201 inch] AVRM1005/AVRL1005 1005 [0402 inch] AVRM1608/AVRL1608 1608 [0603 inch] AVRM2012 2012 [0805 inch]**
- **Dimensions Code JIS[EIA]**
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## **REMINDERS FOR USING THESE PRODUCTS**
Before using these products, be sure to request the delivery specifications.
## **SAFETY REMINDERS**
Please pay sufficient attention to the warnings for safe designing when using these products.
## **REMINDERS**
- ~~O~~ Please observe the following precautions in order to avoid problems with chip varistors such as characteristic degradation and element destruction.
Please store these products in an environment with a temperature of 5 to 40°C and humidity level of 20 to 70%RH, and use them within six months.
Poor storage conditions may lead to the deterioration of the solderability of the edge electrodes, so please be careful to avoid contact with humidity, dew condensation, dust, toxic gas (hydrogen, hydrogen sulfide, sulfurous acid, chlorine, ammonia, etc.), direct sunlight, and so on.
Please do not use products that have been dropped or detached when mounting.
Please solder with the reflow soldering method, and not the flow (dip) soldering method.
- ~~O~~ Please observe the following precautions to avoid problems with varistors such as characteristic degradation and element destruction, which ultimately lead to the generation of heat and smoke with the elements.
Do not use in locations where the temperatures exceed the operating temperature range such as under direct sunlight or near sources of heat.
Do not use in locations where there are high levels of humidity such as under direct exposure to weather and areas where steam is released.
Do not use in locations such as dusty areas, high-saline environments, places where the atmosphere is contaminated with corrosive gas, etc.
Avoid powerful vibrations, impact (such as by dropping), pressure, etc. that may lead to splitting in the products.
## **Do not use with a voltage that exceeds the maximum allowable circuit voltage.**
When resin coating (including modular) a varistor, do not use a resin that will cause deterioration of the varistor. Be sure never to use resin that generates hydrogen as palladium is used for the inner electrode. Avoid attachment near combustible materials.
- O Please contact our sales offices when considering the use of the products listed on this catalog for applications, whose performance and/or quality require a more stringent level of safety or reliability, or whose failure, malfunction or trouble could cause serious damage to society, person or property ('specific uses' such as automobiles, airplanes, medical instruments, nuclear devices, etc.) as well as when considering the use for applications that exceed the range and conditions of this catalog. Please also contact us when using these products for automotive applications.
- O Please note that we are not responsible for any damages or losses incurred resulting from the use of these products that exceeds the range and conditions of this catalog or specific uses.
- O Please take appropriate measures such as acquiring protective circuits and devices that meet the uses, applications, and conditions of the instruments and keeping backup circuits.
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## **V o l t a g e P r o t e c t i o n D e v i c e s** SSS **Chip Varistors**
## t—t—‘__
**Product compatible with RoHS directive Compatible with lead-free solders**
## **Countermeasure for surge voltage and static electricity**
## **Overview of the AVR Series**
## **CHARACTERISTICS OF CHIP VARISTOR**
Varistors are voltage dependent nonlinear resistive elements with a resistance that decreases rapidly when the voltage is over the constant value.
Varistor is equivalent with Zener diode of two series connection. Therefore, do not have polarity.
## **CURRENT vs. VOLTAGE CHARACTERISTICS**
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10 [–1]<br>10 [–2] Zener diode<br>/Vz:6.8V<br>Positive direction 10 [–3] Chip varistor<br>/V1mA:12V<br>10 [–4]<br>10 [–5]<br>–18 –14 –10 –6 –2 2 6 10 14 18<br>–10 [–5]<br>–10 [–4]<br>–10 [–3] Negative direction<br>–10 [–2]<br>–10 [–1]<br>Li t<br>Voltage [(] V [)]<br>Current(A)<br>**----- End of picture text -----**<br>
## **EQUIVALENT CIRCUIT**
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2 Zener Diodes<br>A capacitance content<br>**----- End of picture text -----**<br>
## **THE EFFECT OF THE VARISTOR**
## **Without Varistor**
A malfunction and failure of electronic equipment
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ESD, Surge voltage<br>Power line IC<br>Signal line<br>**----- End of picture text -----**<br>
## **With Varistor**
Suppress abnormal voltage by inserting varistor in a circuit
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ESD, Surge voltage<br>Power line IC<br>Signal line<br>Insert a varistor between<br>a line and ground<br>: Chip varistor<br>**----- End of picture text -----**<br>
RoHS Directive Compliant Product: See the following for more details related to RoHS Directive compliant products. http://product.tdk.com/en/environment/rohs/
• All specifications are subject to change without notice.
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**V o l t a g e P r o t e c t i o n D e v i c e s** _SSSSSSSStt—™ **Overview of the AVR Series**
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MEASURING CIRCUIT<br>Sample<br>IC<br>USB2.0 Test<br>board on board<br>PC Test set<br>non : Chip varistor<br>**----- End of picture text -----**<br>
## **Without Varistor**
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With Varistor<br>AVRL101A3R3FTA (3.3pF) AVRL101A6R8GTA (6.8pF)<br>**----- End of picture text -----**<br>
## **MERITS OF REPLACEMENT FROM ZENER DIODE**
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(1) Reduction in the Number of Parts<br>Production examples<br>Zener diode+capacitor Chip varistor<br>Example of replacement at audio terminal<br>Audio/out Audioconnector Audio/out Audioconnector<br>Audio Audio<br>AMP AMP<br>f ra o8 7. : Chip varistor<br>(2) Improved Electrostatic Absorption Capability<br>Compare data of chip varistor and zener diode about IC protection<br>ESD measurements of CMOS-ICs with AVR-type varistors and zener diodes<br>**----- End of picture text -----**<br>
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10 [–7]<br>AVR-M1608C120MT6AB<br>10 [–6]<br>10 [–5]<br>With Zener Diode<br>10 [–4]<br>10 [–3] TAN<br>0 2 4 6 8 10 12 14<br>ESD voltage(kV)<br>CMOS: D74HC04C<br>ESD generator : Noise Laboratory Co.,Ltd., ESS -630A<br>200pF-0Ω method model equipment<br>Contact type discharge<br>ESD applied point: Vcc-ground<br>)Ω<br>of tested circuit(<br>Insulation resistance<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## **Overview of the AVR Series**
## **FEATURES**
No polarity, due to symmetrical current-voltage characteristics. Equivalent to anode common type Zener diode.
- Excellent electrostatic absorption capability. Response is as good or better than Zener diode.Keeps symmetrical current-voltage characteristics even after electrostatic absorption.
- Adopted the inner electrodes lamination structure.
- Wide range of varistor voltages are available in series (6.8 to 90V).
- Low capacitance items are available in series (from 1.1pF).
- World’s smallest 0402-, 0603-, 1005-, 1608-, 2012-chip size are available in series.
- Excellent mount reliability. Good for Pb-free soldering.Adopted (Ni/Sn) electroplating. Achieved good solderability and solder heat resistance.
Can replace a Zener diode + capacitor combination. Reduced footprint and total mounting cost.
## **APPLICATION**
Electrostatic absorption
Pulse noise absorption
## **APPLICATION EXAMPLES** ~~MBO~~
**Consumer product Application** Mobile phone Data terminal Digital video camera LCD panel Digital camera Touch panel PDA Button and switch unit Note PC Battery terminal DVD-ROM, CD-ROM Audio-Video input-output terminal CD/MD/MP3 player Microphone/receiver unit Game machine Controller unit CAN-BUS ECU Connector In-car equipment Air conditioner panel Car audio Car navigation
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qO SMART PHONE AUDIO, VIDEO<br>To LCD driver 7 t-<br>Monitor Video1 Video2 Video3 Video5<br>OUT in in in in<br>Microphone/Receiver<br>LCD panel Digi<br>Video Video Video Video<br>L L/MONO L/MONO L/MONO L/MONO<br>Button Data terminal<br>‘= G a : Chip varistor r efajel Audio Audio Audio Audio al Audio<br>USB2.0 - R alolole| « -<br>VDD<br>USB cable<br>D–<br>USB IC D+<br>: Chip varistor<br>USB connector<br>F.G. : Chip varistor<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## **V o l t a g e P r o t e c t i o n D e v i c e s** ee **Overview of the AVR Series**
## **PART NUMBER CONSTRUCTION**
|AVRM|AVRM||1005||C|C||6R8||N|||T|T||101|101|||N|N|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||||
|**Series name**|||**L×W Dimensions**<br>**(mm)**||**Structure**<br>**code**|||**Varistor**<br>**voltage**<br>**(V)**||**Varistor voltage**<br>**tolerance**<br>**(%)**||**Packaging style**||||**Capacitance or**<br>**TDK internal**<br>**code**||**Capacitance or**|**Capacitance**<br>**tolerance**<br>**(%)**|||
||||0402<br>0.4×0.2|||||6R8<br>6.8||K<br>±10||T|Taping||||||M||±20|
||||0603<br>0.6×0.3|||||270<br>27||M<br>±20||B||Bulk|||||N||±30|
||||1005<br>1.0×0.5|||||||N<br>±30||||||||||||
||||1608<br>1.6×0.8|||||||||||||||||||
||||2012<br>2.0×1.2|||||||||||||||||||
When the capacitance is not included in the part number, the capacitance tolerance is also not described.
AVRL 10 1A 3R3 F T A **Maximum Capacitance L×W Dimensions Capacitance Varistor voltage or Series name continuous voltage tolerance Packaging style (mm) (pF) TDK internal code (Vdc) (pF)** 04 0.4×0.2 1A 10 1R1 1.1 D ±0.5 T Taping 06 0.6×0.3 1C 16 2R2 2.2 F ±1 10 1.0×0.5 1E 25 3R3 3.3 G ±2 ~~——_——~~ 16 1.6×0.8 6R8 6.8 N ±0.3
|**Type**<br>~~_=S—~~|**Temperature range**<br>~~_=S—~~|**Temperature range**<br>~~_=S—~~|**Package quantity**<br>~~_=S—~~|**Individual weight**|
|---|---|---|---|---|
||**Operating**<br>**temperature**<br>~~_=S—~~|**Storage**<br>**temperature**<br>~~_=S—~~|||
||（**°C**）<br>~~_=S—~~|（**°C**）<br>~~_=S—~~|**(pieces/reel)**<br>~~_=S—~~|（**mg**）**typ.**|
|**AVRM0402**<br>~~_=S—~~|–40 to +85<br>~~_=S—~~|–40 to +85<br>~~_=S—~~|20,000<br>~~_=S—~~|0.1|
|**AVRL0402**<br>~~_=S—~~|–40 to +85<br>~~_=S—~~|–40 to +85<br>~~_=S—~~|20,000<br>~~_=S—~~|0.1|
|**AVRM0603**|–40 to +85|–40 to +85|15,000|0.2|
|**AVRL0603**|–40 to +85|–40 to +85|15,000|0.2|
|**AVRM1005**|–40 to +125|–40 to +125|10,000|1.2|
|**AVRL1005**|–40 to +85|–40 to +85|10,000|1.2|
|**AVRM1608**|–40 to +125|–40 to +125|4,000|5|
|**AVRL1608**|–40 to +85|–40 to +85|4,000|5|
|**AVRM2012**|–40 to +125|–40 to +125|2,000|12|
Operating temperature range includes self-temperature rise. The Storage temperature range is for after the circuit board is mounted.
## **OPERATIONAL VOLTAGE RANGES**
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AVRM0402/AVRL0402 types 25<br>AVRM0603/AVRL0603 types 25<br>AVRM1005/AVRL1005 types 19<br>AVRM1608/AVRL1608 types 28<br>AVRM2012 type 28<br>0 5 10 15 20 25 30<br>Circuit voltage(V)<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## **Overview of the AVR Series**
## ~~a~~ **TERMINOLOGY**
|**Item**|**Unit**|**Terminology**|
|---|---|---|
|Varistor voltage<br>(Breakdown voltage)|V1mA<br>(V)|Voltage measured across the varistor when DC1mA is applied.|
|Maximum continuous voltage|Vdc|Maximum DC voltage that can be applied continuously.|
|(Rated voltage)|(V)|Varistor leakage current: 50μA max.(Within the range of maximum allowable circuit voltage)|
|Clamping voltage|Vcl<br>(V)|Voltage appearing across the varistor when a pulse current (8/20μs 1) of specified peak value is applied.|
|Maximum energy|E<br>(Joule)|Maximum energy that can be absorbed without deteriorating varistor characteristics when an impulse<br>current(10/1000μs 2)is applied once.|
|Maximum peak current|Ip<br>(A)|Maximum current that can be withstood without deteriorating varistor characteristics when an impulse<br>current (8/20μs 1) is applied once.|
|Capacitance|C<br>(pF)|Capacitance measured at 1kHz<br>(or 1MHz)of oscillator frequencyand 1Vrms of oscillator voltage.|
|Insulation resistance<br>Rdc<br>(M<br>)<br>Insulation resistance appearing across the varistor when specified voltage is applied.<br>~~a~~|||
|18/20μs test waveform|||
|100%|||
|50%<br>90%<br>Current|||
|8μs|||
|20μs|||
|Time|||
## 2 10/1000μs test waveform
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100%<br>90%<br>50%<br>10μs<br>1000μs<br>Time<br>Energy<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## **Overview of the AVR Series**
## **RECOMMENDED REFLOW PROFILE**
||||Preheating||Soldering<br>T4<br>Peak|Soldering<br>T4<br>Peak|Soldering<br>T4<br>Peak|Soldering<br>T4<br>Peak|Natural<br>cooling|||
|---|---|---|---|---|---|---|---|---|---|---|---|
|T:Temperature|T1||T2|T3||t3|||T3|||
||||t1|||t2||||||
|||||||||||||
||||t:Time|||||||||
|**Preheating**||||**Soldering**||||||**Peak**||
|**Temp.**|||**Time**|**Temp.**|||**Time**|||**Temp.**|**Time**|
|**T1**|**T2**||**t1**|**T3**|||**t2**|||**T4**|**t3**|
|150°C<br>180°C|||120s max.|230°C||40s max.||||260°C max.|5s|
• All specifications are subject to change without notice.
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## **V o l t a g e P r o t e c t i o n D e v i c e s** SSS AVR series
## **AVRM0402/AVRL0402 Types**
## **SHAPE & DIMENSIONS**
## **INTERNAL STRUCTURE**
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0.4±0.02<br>0.07 min.<br>Dimensions in mm<br>0.2±0.02<br>0.2±0.02<br>**----- End of picture text -----**<br>
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Inner electrode Varistor body<br>(Palladium) (Zinc Oxide: ZnO semiconductor ceramics)<br>Sn plating<br>Ag termination<br>underlayer<br>Ni plating<br>**----- End of picture text -----**<br>
## **RECOMMENDED LAND PATTERN**
## **CIRCUITS DIAGRAM**
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0.15 to 0.2 0.2 0.15 to 0.2<br>0.18 to 0.2<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## AVR series **AVRM0402/AVRL0402 Types**
## **ELECTRICAL CHARACTERISTICS**
## O **CHARACTERISTICS SPECIFICATION TABLE AVRM0402**
|||**Varistor voltage**|**Maximum continuous**|**Clamping**|**Maximum**|**Maximum**|**Capacitance**|
|---|---|---|---|---|---|---|---|
|||**(Breakdown voltage)**|**voltage**|**voltage**|**energy**|**peak current**||
||**Part No.**|**V1mA(V)**|**(Rated voltage)**<br>**Vdc(V)**|**Vcl(V)**|**E(Joule)**|**Ip(A)**|**C(pF)**|
|||**[DC1mA]**||**[8/20μs]**|**[10/1000μs]**|**[8/20μs]**|**[1kHz, 1Vrms]**|
||||**max.**||**max.**|**max.**|**typ.**|
|AVRM0402C6R8NT101N||6.8 (4.76 to 8.84)|3.5|15[1A]|0.01|4|100(70 to 130)|
||AVRM0402C120MT330N|12<br>(9.6 to 14.4)|5.5|20[1A]|0.005|1|33(23.1 to 43.9)|
## **AVRL0402**
|||**Varistor voltage**|**Maximum continuous**|**Capacitance**|**Insulation**|
|---|---|---|---|---|---|
||||**voltage**||**resistance**|
||**Part No.**|**V1mA(V)**|**(Rated voltage)**<br>**Vdc(V)**|**C(pF)**|**Rdc(M )**<br>~~Q~~|
|||**[DC1mA]**|**max.**|**[1MHz, 1Vrms]**|**[3Vrms]**|
|||**typ.**|||**min.**|
|AVRL041E1R1NTA||39|25|1.1[0.8 to 1.4]|10|
• All specifications are subject to change without notice.
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## AVR series **AVRM0402/AVRL0402 Types**
## **ELECTRICAL CHARACTERISTICS**
## **CURRENT vs. VOLTAGE CHARACTERISTICS**
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SSSSSSSSSSSSSq<br>10 [–1] aSas<br>10 [–2]<br>V1mA=6.8V V1mA=12V V1mA=39V<br>pp<br>10 [–3]<br>= ——————————————<br>10 [–4] a<br>ff eS<br>10 [–5]<br>——a—<br>10 [–6]<br>tps—=———— fe=—=<br>10 [–7] ee<br>0 10 20 30 40 50<br>Voltage(V)<br>100<br>Current(A)<br>**----- End of picture text -----**<br>
## **IMPEDANCE vs. FREQUENCY CHARACTERISTICS**
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1000000 ee ee<br>100000 SEEFa<br>10000<br>Sete=eeSerer<br>1000<br>Po NONON 1.1pF<br>100 PSST<br>AN 33pF<br>100pF<br>10<br>aii na Sire<br>1<br>INSo a eS eel<br>0.11 EHH 10 FEA 100 1000 10000<br>Frequency(MHz)<br>)Ω<br>Impeadance(<br>**----- End of picture text -----**<br>
## **TRANSMISSION CHARACTERISTICS**
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10<br>1.1pF<br>0<br>–10 —<<br>Naa<br>–20 \\<br>100pF 33pF<br>\\<br>–30<br>BT UT<br>f V<br>–40<br>–50<br>–60<br>1 10 100 1000 10000<br>Frequency(MHz)<br>Insertion loss(dB)<br>**----- End of picture text -----**<br>
## **CAPACITANCE vs. FREQUENCY CHARACTERISTICS**
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**----- Start of picture text -----**<br>
1000<br>100 Sri 100pF Stn Seth Sta<br>TT aL<br>SSectiieeectiiesectiie<br>33pF<br>10 atti<br>medrTmaLT<br>aer a ee ll<br>1 aSe 1.1pF<br>SS eesti eesti eesti mee<br>0.1 PTE PCT CHT<br>1 10 100 1000 10000<br>Frequency(MHz)<br>Capacitance(pF)<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## **V o l t a g e P r o t e c t i o n D e v i c e s** SSS AVR series
## **AVRM0603/AVRL0603 Types**
## **SHAPE & DIMENSIONS**
## **INTERNAL STRUCTURE**
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0.6±0.03<br>0.1 min.<br>Dimensions in mm<br>0.3±0.03<br>0.3±0.03<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Inner electrode Varistor body<br>(Palladium) (Zinc Oxide: ZnO semiconductor ceramics)<br>Sn plating<br>Ag termination<br>underlayer<br>Ni plating<br>**----- End of picture text -----**<br>
## **RECOMMENDED LAND PATTERN**
## **CIRCUITS DIAGRAM**
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0.2 to 0.3 0.25 to 0.35 0.2 to 0.3<br>0.25 to 0.35<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## AVR series **AVRM0603/AVRL0603 Types**
## **ELECTRICAL CHARACTERISTICS**
## O **CHARACTERISTICS SPECIFICATION TABLE AVRM0603**
|||**Varistor voltage**|**Varistor voltage**|**Maximum**|**Clamping**|**Maximum**|**Maximum**|**Capacitance**|
|---|---|---|---|---|---|---|---|---|
|||**(Breakdown voltage)**||**continuous voltage**|**voltage**|**energy**|**peak current**||
||**Part No.**|**V1mA(V)**||**(Rated voltage)**<br>**Vdc(V)**|**Vcl(V)**|**E(Joule)**|**Ip(A)**|**C(pF)**|
|||**[DC1mA]**|||**[8/20μs]**|**[10/1000μs]**|**[8/20μs]**|**[1kHz, 1Vrms]**|
|||||**max.**||**max.**|**max.**|**typ.**|
|AVRM0603C6R8NT331N||6.8|(4.76 to 8.84)|3.5|14[1A]|0.02|16|330(231 to 429)|
||AVRM0603C6R8NT101N|6.8|(4.76 to 8.84)|3.5|14[1A]|0.01|10|100(70 to 130)|
|AVRM0603C080MT101N||8|(6.4 to 9.6)|5.5|17[1A]|0.01|4|100(70 to 130)|
||AVRM0603C120MT101N|12.8|(10 to 15.6)|5.5|20[1A]|0.01|5|100(70 to 130)|
|AVR-M0603C120MTAAB||12|(9.6 to 14.4)|7.5|23[1A]|0.01|1|33|
||AVRM0603C120MT150N|12.8|(10 to 15.6)|5.5|35[1A]|0.003|1|15(10.5 to 19.5)|
|AVRM0603C200MT150N||20|(16.0 to 24.0)|12|40[1A]|0.01|1|15(10.5 to 19.5) [1MHz]|
## **AVRL0603**
|||**Varistor voltage**|**Maximum continuous**|**Capacitance**|**Insulation**|
|---|---|---|---|---|---|
||||**voltage**||**resistance**|
||**Part No.**|**V1mA(V)**|**(Rated voltage)**<br>**Vdc(V)**|**C(pF)**|**Rdc(M )**<br>~~Q~~|
|||**[DC1mA]**|**max.**|**[1MHz, 1Vrms]**|**[3Vrms]**|
|||**typ.**|||**min.**|
|AVRL061E1R1NTA||39|25|1.1[0.8 to 1.4]|10|
• All specifications are subject to change without notice.
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## AVR series **AVRM0603/AVRL0603 Types**
## **ELECTRICAL CHARACTERISTICS**
## Oj **CURRENT vs. VOLTAGE CHARACTERISTICS**
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**----- Start of picture text -----**<br>
10 [–1]<br>10 [–2]<br>V1mA=6.8V V1mA=12V<br>— SS<br>10 [–3] afp V1mA=39V<br>10 [–4] UF<br>10 [–5]<br>10 [–6]<br>——<br>10 [–7] ——————<br>0 10 20 30 40 50<br>Voltage(V)<br>100<br>Current(A)<br>**----- End of picture text -----**<br>
## **IMPEDANCE vs. FREQUENCY CHARACTERISTICS**
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**----- Start of picture text -----**<br>
1000000<br>SS<br>100000<br>10000<br>essePN<br>1000 ee 15pF<br>1.1pF<br>Sis StySa 33pF<br>100 ati Soc gg MES<br>100pF<br>10 ||TTAEN TTT<br>1<br>Sesiimenaiieevi<br>0.1 FEE EE ua<br>1 10 100 1000 10000<br>Frequency(MHz)<br>)Ω<br>Impeadance(<br>**----- End of picture text -----**<br>
## **TRANSMISSION CHARACTERISTICS**
## **CAPACITANCE vs. FREQUENCY CHARACTERISTICS**
**==> picture [466 x 191] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 1000<br>0 1.1pF<br>Na Pat<br>–10 100 100pF<br>Re a)<br>33pF<br>–20 \| \ WNff S eaiiiimeetiiimeererSS aeys<br>15pF<br>15pF 10<br>–30 SM cr ec<br>LM LLIN AM 33pF iu Sereesei<br>100pF i ou)YT TTEET]oe) oe eeecee,<br>–40 1.1pF<br>1<br>TTSS Sas SSS ee<br>–50<br>eee ear ee et<br>–60 0.1 coeco<br>1 10 100 1000 10000 1 10 100 1000 10000<br>Frequency(MHz) Frequency(MHz)<br>Insertion loss(dB) Capacitance(pF)<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## **V o l t a g e P r o t e c t i o n D e v i c e s** SSS AVR series
## **AVRM1005/AVRL1005 Types**
## **SHAPE & DIMENSIONS**
## **INTERNAL STRUCTURE**
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**----- Start of picture text -----**<br>
1.0±0.05<br>0.1 min.<br>Dimensions in mm<br>0.5±0.05<br>0.5±0.05<br>**----- End of picture text -----**<br>
**==> picture [209 x 75] intentionally omitted <==**
**----- Start of picture text -----**<br>
Inner electrode Varistor body<br>(Palladium) (Zinc Oxide: ZnO semiconductor ceramics)<br>Sn plating<br>Ag termination<br>underlayer<br>Ni plating<br>**----- End of picture text -----**<br>
## **RECOMMENDED LAND PATTERN**
## **CIRCUITS DIAGRAM**
**==> picture [128 x 57] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.35 to 0.45 0.3 to 0.5 0.35 to 0.45<br>0.4 to 0.6<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## AVR series **AVRM1005/AVRL1005 Types**
## **ELECTRICAL CHARACTERISTICS**
## O **CHARACTERISTICS SPECIFICATION TABLE AVRM1005**
|||**Varistor voltage**|**Varistor voltage**|**Maximum continuous**|**Clamping**|**Maximum**|**Maximum**|**Capacitance**|
|---|---|---|---|---|---|---|---|---|
|||**(Breakdown voltage)**||**voltage**|**voltage**|**energy**|**peak**||
||**Part No.**|**V1mA(V)**||**(Rated voltage)**<br>**Vdc(V)**|**Vcl(V)**|**E(Joule)**|**current**<br>**Ip(A)**|**C(pF)**|
|||**[DC1mA]**|||**[8/20μs]**|**[10/1000μs]**|**[8/20μs]**|**[1kHz, 1Vrms]**|
|||||**max.**||**max.**|**max.**|**typ.**|
|AVRM1005C6R8NT331N||6.8|(4.76 to 8.84)|3.5|15[1A]|0.008|24|330(231 to 429)|
||AVRM1005C6R8NT101N|6.8|(4.76 to 8.84)|3.5|14[1A]|0.02|10|100(70 to 130)|
|AVR-M1005C080MTAAB||8|(6.4 to 9.6)|5.5|14[1A]|0.04|25|650|
||AVR-M1005C080MTADB|8|(6.4 to 9.6)|5.5|14[1A]|0.04|25|480|
|AVR-M1005C080MTABB||8|(6.4 to 9.6)|5.5|15[1A]|0.02|3|100|
||AVR-M1005C080MTACB|8|(6.4 to 9.6)|5.5|19[1A]|0.01|1|33|
||AVR-M1005C120MTACC|12|(9.6 to 14.4)|7.5|21[1A]|0.01|24|460[1MHz]|
||AVR-M1005C120MTAAB|12|(9.6 to 14.4)|7.5|20[1A]|0.05|10|130|
|AVR-M1005C180MTAAB||18|(14.4 to 21.6)|11|30[1A]|0.06|16|120[1MHz]|
||AVRM1005C270KT101N|27|(24 to 30)|19|44[1A]|0.06|4|100(70 to 130)|
|AVR-M1005C270MTAAB||27|(21.6 to 32.4)|15|47[1A]|0.06|4|40|
||AVR-M1005C270MTABB|27|(21.6 to 32.4)|15|49[1A]|0.05|1|15|
**AVRL1005**
|||**Varistor voltage**|**Maximum continuous**|**Capacitance**|**Insulation**|**Insulation**|
|---|---|---|---|---|---|---|
||||**voltage**||**resistance**||
||**Part No.**|**V1mA(V)**|**(Rated voltage)**<br>**Vdc(V)**|**C(pF)**|**Rdc(M **|**)**<br>~~Q~~|
|||**[DC1mA]**||**[1MHz, 1Vrms]**|**[3Vrms]**||
|||**typ.**|**max.**||**min.**||
|AVRL101A1R1NTA||90|10|1.1[0.8 to 1.4]|10||
||AVRL101A1R1NTB|39|10|1.1[0.8 to 1.4]|10||
|AVRL101C2R2DTA||90|16|2.2[1.7 to 2.7]|10||
||AVRL101A3R3FTA|27|10|3.3[2.3 to 4.3]|10||
|AVRL101A6R8GTA||27|10|6.8[4.8 to 8.8]|10||
• All specifications are subject to change without notice.
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## AVR series **AVRM1005/AVRL1005 Types**
## **ELECTRICAL CHARACTERISTICS**
## Oj **CURRENT vs. VOLTAGE CHARACTERISTICS**
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**----- Start of picture text -----**<br>
10 [–1]<br>V1mA=8V<br>V1mA=6.8V<br>10 [–2] V1mA=27V<br>—_————— V1mA=12V<br>10 [–3] V1mA=39V<br>10 [–4]<br>10 [–5]<br>10 [–6]<br>10 [–7] a<br>0 10 20 30 40 50<br>Voltage(V)<br>100<br>Current(A)<br>**----- End of picture text -----**<br>
## **IMPEDANCE vs. FREQUENCY CHARACTERISTICS**
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**----- Start of picture text -----**<br>
1000000<br>100000<br>33pF<br>10000<br>15pF<br>SSH Saiihiesay esata<br>6.8pF<br>1000 3.3pF<br>1.1pF<br>100<br>100pF<br>650pF<br>10<br>1<br>0.1 SS eaiiiaeeasiiians Aiaeeatl<br>1 10 100 1000 10000<br>Frequency(MHz)<br>)Ω<br>Impeadance(<br>**----- End of picture text -----**<br>
## **TRANSMISSION CHARACTERISTICS**
## **CAPACITANCE vs. FREQUENCY CHARACTERISTICS**
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**----- Start of picture text -----**<br>
10 10000<br>15pF 6.8pF 3.3pF<br>1.1pF 650pF<br>0<br>1000<br>–10 650pF 100pF<br>100pF<br>–20 100 33pF<br>0 a 15pF<br>33pF<br>–30 SEIMEI Me TT TTT FTE tn 6.8pF<br>10<br>3.3pF<br>–40<br>1<br>–50 1.1pF<br>–60 0.1 au<br>1 mia 10 100 [a] \ 1000 10000 1 =e 10 100 1000 10000<br>Frequency(MHz) Frequency(MHz)<br>Insertion loss(dB) Capacitance(pF)<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## **V o l t a g e P r o t e c t i o n D e v i c e s** SSS AVR series
## **AVRM1608/AVRL1608 Types**
## **SHAPE & DIMENSIONS**
## **INTERNAL STRUCTURE**
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**----- Start of picture text -----**<br>
1.6±0.1<br>0.2 min.<br>Dimensions in mm<br>0.8±0.1<br>0.8±0.1<br>**----- End of picture text -----**<br>
**==> picture [209 x 75] intentionally omitted <==**
**----- Start of picture text -----**<br>
Inner electrode Varistor body<br>(Palladium) (Zinc Oxide: ZnO semiconductor ceramics)<br>Sn plating<br>Ag termination<br>underlayer<br>Ni plating<br>**----- End of picture text -----**<br>
## **RECOMMENDED LAND PATTERN**
## **CIRCUITS DIAGRAM**
**==> picture [125 x 47] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.6 to 0.8 0.6 to 0.8 0.6 to 0.8<br>0.6 to 0.8<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## AVR series **AVRM1608/AVRL1608 Types**
## **ELECTRICAL CHARACTERISTICS**
## O **CHARACTERISTICS SPECIFICATION TABLE AVRM1608**
|||**Varistor voltage**|**Varistor voltage**|**Maximum continuous**|**Clamping**|**Maximum**|**Maximum**|**Capacitance**|
|---|---|---|---|---|---|---|---|---|
|||**(Breakdown voltage)**||**voltage**|**voltage**|**energy**|**peak current**||
||**Part No.**|**V1mA(V)**||**(Rated voltage)**<br>**Vdc(V)**|**Vcl(V)**|**E(Joule)**|**Ip(A)**|**C(pF)**|
|||**[DC1mA]**|||**[8/20μs]**|**[10/1000μs]**|**[8/20μs]**|**[1kHz, 1Vrms]**|
|||||**max.**||**max.**|**max.**|**typ.**|
|AVR-M1608C080MTAAB||8|(6.4 to 9.6)|5.5|15[2A]|0.09|30|650|
||AVR-M1608C120MT6AB|12|(9.6 to 14.4)|7.5|20[2A]|0.09|50|1050|
|AVR-M1608C120MT2AB||12|(9.6 to 14.4)|7.5|20[2A]|0.06|15|400|
||AVR-M1608C180MT6AB|18|(14.4 to 21.6)|11|30[2A]|0.1|30|600|
||AVR-M1608C220KT6AB|22|(19.8 to 24.2)|16|34[2A]|0.1|30|560|
||AVR-M1608C220KT2AB|22|(19.8 to 24.2)|16|37[2A]|0.03|10|210|
||AVR-M1608C270KT6AB|27|(24 to 30)|19|42[2A]|0.1|48|430|
||AVR-M1608C270KT2AB|27|(24 to 30)|19|42[2A]|0.1|20|160|
||AVR-M1608C270KTACB|27|(24 to 30)|19|54[2A]|0.05|10|60|
||AVRM1608C270KT800M|27|(24 to 30)|19|53[2A]|0.02|28|80(64 to 96)|
|AVR-M1608C270MTAAB||27|(21.6 to 32.4)|17|52[2A]|0.05|2|30|
||AVR-M1608C270MTABB|27|(21.6 to 32.4)|17|52[2A]|0.05|2|15|
|AVRM1608C390KT271N||39|(35 to 43)|28|69[2A]|0.1|78|270(189 to 351)|
## **AVRL1608**
|||**Varistor voltage**|**Maximum continuous**|**Capacitance**|**Insulation**|**Insulation**|
|---|---|---|---|---|---|---|
||||**voltage**||**resistance**||
||**Part No.**|**V1mA(V)**|**(Rated voltage)**<br>**Vdc(V)**|**C(pF)**|**Rdc(M **|**)**<br>~~Q~~|
|||**[DC1mA]**||**[1MHz, 1Vrms]**|**[3Vrms]**||
|||**typ.**|**max.**||**min.**||
|AVRL161A1R1NTA||90|10|1.1[0.8 to 1.4]|10||
||AVRL161A1R1NTB|39|10|1.1[0.8 to 1.4]|10||
|AVRL161A3R3FTA||27|10|3.3[2.3 to 4.3]|10||
||AVRL161A6R8GTA|27|10|6.8[4.8 to 8.8]|10||
• All specifications are subject to change without notice.
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## AVR series **AVRM1608/AVRL1608 Types**
## **ELECTRICAL CHARACTERISTICS**
O **CURRENT vs. VOLTAGE CHARACTERISTICS**
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**----- Start of picture text -----**<br>
V1mA=18V<br>10 [–1]<br>———— V1mA=12V V1mA=22V<br>V1mA=8V<br>10 [–2]<br>V1mA=27V<br>10 [–3] V1mA=39V<br>10 [–4]<br>10 [–5]<br>=<br>10 [–6]<br>10 [–7] a<br>0 10 20 30 40 50<br>Voltage(V)<br>TRANSMISSION CHARACTERISTICS<br>10<br>6.8pF 3.3pF<br>1.1pF<br>0<br>TMT<br>–10<br>1050pF MQNYTT 2:<br>–20<br>600pF 15pF<br>Wi<br>–30 400pF 30pF<br>Bn,<br>160pF<br>–40 ih<br>–50<br>–60<br>1 10 100 1000 10000<br>Frequency(MHz)<br>100<br>Current(A)<br>Insertion loss(dB)<br>**----- End of picture text -----**<br>
## **IMPEDANCE vs. FREQUENCY CHARACTERISTICS**
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**----- Start of picture text -----**<br>
1000000<br>100000<br>Sesh [aseitiaatil)] aaa<br>30pF<br>10000<br>15pF<br>6.8pF<br>1000 3.3pF<br>1.1pF<br>100<br>1050pF<br>10 600pF<br>OS 400pF Ay<br>160pF<br>1<br>0.1 =F Wen<br>1 10 100 1000 10000<br>Frequency(MHz)<br>CAPACITANCE vs. FREQUENCY CHARACTERISTICS<br>10000<br>1050pF 600pF<br>1000 400pF<br>160pF<br>uwtia<br>100 30pF<br>=== 15pF<br>6.8pF<br>10<br>SE<br>3.3pF<br>Ste<br>1.1pF<br>1<br>0.1 i<br>1 10 100 1000 10000<br>Frequency(MHz)<br>)Ω<br>Impeadance(<br>Capacitance(pF)<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## **V o l t a g e P r o t e c t i o n D e v i c e s** SSS AVR series **AVRM2012 Type**
## **SHAPE & DIMENSIONS**
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**----- Start of picture text -----**<br>
2.0±0.2<br>0.2 min.<br>Dimensions in mm<br>1.25±0.2<br>1.0±0.2<br>**----- End of picture text -----**<br>
## **RECOMMENDED LAND PATTERN**
## **INTERNAL STRUCTURE**
**==> picture [209 x 75] intentionally omitted <==**
**----- Start of picture text -----**<br>
Inner electrode Varistor body<br>(Palladium) (Zinc Oxide: ZnO semiconductor ceramics)<br>Sn plating<br>Ag termination<br>underlayer<br>Ni plating<br>**----- End of picture text -----**<br>
## **CIRCUITS DIAGRAM**
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**----- Start of picture text -----**<br>
0.7 to 0.9 0.9 to 1.2 0.7 to 0.9<br>0.9 to 1.2<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## AVR series **AVRM2012 Type**
## ~~a~~ **ELECTRICAL CHARACTERISTICS** ~~O~~ **CHARACTERISTICS SPECIFICATION TABLE**
|||**Varistor voltage**|**Maximum continuous**|**Clamping**|**Maximum**|**Maximum**|**Capacitance**|
|---|---|---|---|---|---|---|---|
|||**(Breakdown voltage)**|**voltage**|**voltage**|**energy**|**peak current**||
||**Part No.**|**V1mA(V)**|**(Rated voltage)**<br>**Vdc(V)**|**Vcl(V)**|**E(Joule)**|**Ip(A)**|**C(pF)**|
|||**[DC1mA]**||**[8/20μs]**|**[10/1000μs]**|**[8/20μs]**|**[1kHz, 1Vrms]**|
||||**max.**||**max.**|**max.**|**typ.**|
|AVR-M2012C120MT6AB||12<br>(9.6 to 14.4)|7.5|20[5A]|0.2|60|1000|
||AVR-M2012C220KT6AB|22<br>(19.8 to 24.2)|16|38[5A]|0.3|100|800|
||AVR-M2012C390KT6AB|39<br>(35 to 43)|28|62[5A]|0.3|100|430|
• All specifications are subject to change without notice.
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## **V o l t a g e P r o t e c t i o n D e v i c e s** ee
## AVR series **AVRM2012 Type**
## **ELECTRICAL CHARACTERISTICS**
**CURRENT vs. VOLTAGE CHARACTERISTICS**
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**----- Start of picture text -----**<br>
IMPEDANCE vs. FREQUENCY CHARACTERISTICS<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1000<br>10 [–1]<br>100<br>10 [–2]<br>800pF<br>10 [–3]<br>10<br>V1mA=12V V1mA=22V V1mA=39V 1000pF 430pF<br>10 [–4]<br>10 [–5]<br>1<br>10 [–6]<br>ff \/<br>10 [–7] JJ 0.1 "4<br>0 10 20 30 40 50 1 10 100 1000 10000<br>Voltage(V) Frequency(MHz)<br>TRANSMISSION CHARACTERISTICS CAPACITANCE vs. FREQUENCY CHARACTERISTICS<br>10 10000<br>0<br>800pF<br>1000pF<br>–10<br>1000pF SAN 430pF Wa See 430pF a<br>–20 ye eB [£222<br>1000<br>–30<br>800pF<br>–40<br>–50<br>–60 qe 100 eae<br>1 10 100 1000 10000 1 10 100 1000 10000<br>Frequency(MHz) Frequency(MHz)<br>100<br>)Ω<br>Current(A) Impeadance(<br>Insertion loss(dB) Capacitance(pF)<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## AVR series
## **Electrostatic discharge tests**
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**----- Start of picture text -----**<br>
ELECTROSTATIC DISCHARGE TESTS (EXAMPLE)<br>AVR-M1005C080MTAAB<br>20<br>0<br>–20<br>–40<br>–60<br>–80<br>f –100 p<br>Init. 1 10 100 1000<br>Number of Discharge(Times)<br>AVR-M1608C080MTAAB<br>20<br>0<br>–20<br>–40<br>–60<br>–80<br>–100 7]<br>Init. 1 10 100 1000<br>Number of Discharge(Times)<br>V1mA/V1mA(%)<br>Δ<br>V1mA/V1mA(%)<br>Δ<br>**----- End of picture text -----**<br>
## **AVRL101A3R3FTA**
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**----- Start of picture text -----**<br>
20<br>0<br>–20<br>–40<br>–60<br>–80<br>–100<br>Init. 1 10 100 1000<br>Number of Discharge(Times)<br>C1MHz/C1MHz(%)<br>Δ<br>**----- End of picture text -----**<br>
## **AVRL161A3R3FTA**
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**----- Start of picture text -----**<br>
20<br>0<br>–20<br>–40<br>–60<br>–80<br>–100<br>Init. 1 10 100 1000<br>Number of Discharge(Times)<br>C1MHz/C1MHz(%)<br>Δ<br>**----- End of picture text -----**<br>
## ○Test conditions
150pF, 330 contact discharge Charged voltage /8kV, 0.1s interval
**==> picture [253 x 115] intentionally omitted <==**
**----- Start of picture text -----**<br>
150pF, 330 contact discharge<br>Charged voltage /8kV, 0.1s interval<br>○Measurement equipment<br>Discharge gun<br>10MΩ 330Ω Test<br>sample<br>High voltage 150pF<br>DC power supply<br>ESD<br>ee ESD simulator simulator<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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## AVR series
## **Electrostatic absorption characteristics**
## **DISCHARGE CURRENT WAVEFORM**
## **DISCHARGE VOLTAGE WAVEFORM (EXAMPLE)**
**==> picture [511 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
8 350<br>7 150pF, 330Ω, 300 Open waveform<br>6 Contact discharge, Test level 1 250 Ty AVR-M1005C120MTAAB / V1mA:12V —_<br>5<br>200 AVR-M1005C080MTAAB / V1mA:8V<br>4<br>3 150 Zener diode /Vz:6.2V<br>2 100 Pry } |<br>–110 –50500 |ee_i BhentaetdemnanbantsoOA aN tee |__|<br>–50 0 50 100 150 200 250 300 –50 0 50 100 150 200 250 300<br>Time(ns) Time(ns)<br>ESD ABSORPTION CHARACTERISTICS<br>COMPARISON OF VARIOUS ELEMENTS<br>(EXAMPLE)<br>350<br>300<br>250 269V<br>271V 258V down<br>200 down down (voltage)<br>150 Peakvoltagevoltage Peak voltage:Peak voltage of standing up partAverage voltage : Average voltage of 30 to 100nsAverage voltage : Average voltage of 30 to 100ns<br>100<br>101V 93V 96V<br>50 down down down ESD (Electro Static Discharge)<br>0 Averagevoltagevoltage absorption characteristics of V1mA-8V<br>Open waveform AVR-M1005C080MTAAB AVR-M1005C120MTAAB Zener diode/Vz:6.2V is superior to Vz-6.2V Zener diode.<br>Peak 316 45 58 47<br>Average 117 16 24 21<br>Voltage(V)<br>Discharge current(A)<br>V)(Clamping voltage<br>**----- End of picture text -----**<br>
**==> picture [238 x 77] intentionally omitted <==**
**----- Start of picture text -----**<br>
(voltage)<br>Peakvoltagevoltage Peak voltage:Peak voltage of standing up partAverage voltage : Average voltage of 30 to 100nsAverage voltage : Average voltage of 30 to 100ns<br>ESD (Electro Static Discharge)<br>Averagevoltagevoltage absorption characteristics of V1mA-8V<br>is superior to Vz-6.2V Zener diode.<br>30 100 (ns)<br>**----- End of picture text -----**<br>
## **WAVEFORM PARAMETERS [IEC61000-4-2]**
|**Test level**|**Test level**|**ESD Charge**<br>**voltage**<br>**(kV)**|**First peak current**<br>**of discharge**<br>**(A)**|**Rise time**<br>**(ns)**|
|---|---|---|---|---|
|1||2|7.5|0.7 to 1.0|
|2||4|15|0.7 to 1.0|
|3||6|22.5|0.7 to 1.0|
|4||8|30|0.7 to 1.0|
## **MEASUREMENT EQUIPMENT**
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**----- Start of picture text -----**<br>
10MΩ 330Ω<br>High voltage 150pF<br>DC power supply<br>L f, ESD simulator<br>Discharge gun<br>Test<br>sample<br>60dB attenuator 50Ω<br>ESD<br>simulator Oscilloscope<br>I/O impedance: 50Ω<br>Frequency range: DC to 18GHz<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
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**V o l t a g e P r o t e c t i o n D e v i c e s** ~~rr~~
## AVR series
## **Packaging Style**
## **REEL DIMENSIONS**
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2.0±0.5<br>**----- End of picture text -----**<br>
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tL<br>1.0<br>ø13±0.2 8.4 [+2.0] –0.0<br>ø21±0.8 14.4max.<br>a Te<br>ø180±2.0<br>Dimensions in mm<br>ø60min.<br>**----- End of picture text -----**<br>
## **TAPE DIMENSIONS**
||1.5 +0.1<br>0|||||||2.0±0.05|2.0±0.05|2.0±0.05|2.0±0.05|2.0±0.05|2.0±0.05|2.0±0.05|||4.0±0.1<br>1.75±0.1|4.0±0.1<br>1.75±0.1|4.0±0.1<br>1.75±0.1|4.0±0.1<br>1.75±0.1||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|B|A<br>P1<br>3.5±0.05<br>~~an~~|||||||||||||||||||||8.0±0.3||K||
|||||||||||||||||||||||||Dimensions in mm||
||Type||||||||||||A|||||||B||||P1|K|
||**AVRM0402/AVRL0402**||||||||||0.26±0.04|||||||||0.46±0.04||||2.0±0.05|0.4max.|
||**AVRM0603/AVRL0603**||||||||||0.38±0.05|||||||||0.68±0.05||||2.0±0.05|0.45max.|
||**AVRM1005/AVRL1005**||||||||||0.65±0.1|||||||||1.15±0.1||||2.0±0.05|0.65max.|
||**AVRM1608/AVRL1608**||||||||||1.1±0.2|||||||||1.9±0.2||||4.0±0.1|1.1max.|
||**AVRM2012**||||||||||1.6±0.2|||||||||2.3±0.2||||4.0±0.1|1.7max.|
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160min. Taping 200min.<br>Drawing direction (a 300min. Dimensions in mm<br>**----- End of picture text -----**<br>
• All specifications are subject to change without notice.
20140922 / vpd_varistors_avr_en.fm
Updated at April 23, 2026
TDK Corporation is a globally recognized leader in electronic components and magnetic materials. Founded in 1935 to commercialize ferrites, the Tokyo-based company has evolved into a comprehensive manufacturer of high-performance passive components, sensors, and power electronics. TDK’s advanced materials technology serves as the foundation for its extensive portfolio, driving innovation across automotive, industrial, consumer electronics, and communication technologies. Our selection of TDK components heavily features their industry-leading passive components, with a primary focus on magnetics. TDK excels in manufacturing reliable inductive solutions, offering a vast array of power inductors and RF inductors optimized for demanding power management and high-frequency applications. Furthermore, their expertise in electromagnetic compatibility is showcased through a comprehensive range of EMC and RFI suppression products. This includes common mode chokes, power line filters, and specialized shielding materials designed to ensure superior signal integrity in complex designs. Beyond inductors and filtering components, TDK provides robust circuit protection and sensing solutions essential for modern engineering. The portfolio includes precision temperature sensing and compensation NTC thermistors, alongside TVS varistors and inrush current limiting components that safeguard sensitive electronics. Complemented by fixed value inductors, supercapacitors, and charging coils, TDK's versatile product offering delivers the reliability and performance required for sophisticated circuit design.
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