![AVR-M1608C120MT2AB — TVS Varistor, 7.5 V, 20 V, 0603 [1608 Metric], Multilayer Varistor (MLV)](/media/F/1/7/8EDD0F49D6EC071F.webp)
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AVR-M1608C120MT2AB
TVS Varistor, 7.5 V, 20 V, 0603 [1608 Metric], Multilayer Varistor (MLV)
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- Manufacturer: TDK
- Product type: TVS Varistors
- Voltage Rating VAC:-; Voltage Rating V DC:7.5V; Product Range:-; Clamping Voltage Vc Max:20V; Varistor Case Style:1608; Varistor Type:Multilayer Varistor (MLV); Peak Surge Current @ 8/20µs:50A
- SVHC: No SVHC (05-Nov-2025)
- Product Range: -
- Varistor Type: Multilayer Varistor (MLV)
- Voltage Rating VAC: -
- Voltage Rating VDC: 7.5V
- Varistor Case Style: 0603 [1608 Metric]
- Clamping Voltage Vc Max: 20V
- Peak Energy (10/1000uS): 90mJ
- Operating Temperature Max: 125°C
- Operating Temperature Min: -40°C
- Peak Surge Current @ 8/20µs: 50A
- Automotive Qualification Standard: -
| Delivery and price | |
|---|---|
| Units per pack | 16000 |
| Price | 0.095 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Chip Varistors** Countermeasure for surge voltage and static electricity ## AVR series **Type: AVR-M AVRL** Issue date: September 2013 - All specifications are subject to change without notice. • Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific bromine-based flame retardants, PBB and PBDE, have not been used, except for exempted applications. (2/11) ## **Varistors(SMD)** ## **Conformity to RoHS Directive** ## **Countermeasure for Surge Voltage and Static Electricity** ## AVR Series AVR-M, AVRL Types Varistors are voltage dependent nonlinear resistive elements with a resistance that decreases rapidly when the voltage is over the constant value. Varistor is equivalent with Zener diode of two series connection. Therefore, do not have polarity. ## **CURRENT vs. VOLTAGE CHARACTERISTICS** **==> picture [213 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [–1]<br>10 [–2] Zener diode<br>/Vz:6.8V<br>Positive direction 10 [–3] Chip varistor<br>/V1mA:12V<br>10 [–4]<br>10 [–5]<br>–18 –14 –10 –6 –2 2 6 10 14 18<br>–10 [–5]<br>–10 [–4]<br>–10 [–3] Negative direction<br>–10 [–2]<br>–10 [–1]<br>Voltage [(] V [)]<br>Current(A)<br>**----- End of picture text -----**<br> ## **EQUIVALENT CIRCUIT** **==> picture [70 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> 2 Zener Diodes<br>A capacitance content<br>**----- End of picture text -----**<br> ## **THE EFFECT OF THE VARISTOR WITHOUT VARISTOR** A malfunction and failure of electronic equipment **==> picture [199 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> ESD, Surge voltage<br>Power line IC<br>Signal line<br>**----- End of picture text -----**<br> ## **WITH VARISTOR** Suppress abnormal voltage by inserting varistor in a circuit **==> picture [218 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> ESD, Surge voltage<br>Power line IC<br>Signal line<br>Insert a varistor between<br>a line and ground<br>: Chip varistor<br>**----- End of picture text -----**<br> • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm (3/11) ## **FEATURES** - No polarity, due to symmetrical current-voltage characteristics. Equivalent to anode common type Zener diode. - Excellent electrostatic absorption capability. Response is as good or better than Zener diode. Keeps symmetrical current-voltage characteristics even after electrostatic absorption. - Adopted the inner electrodes lamination structure. Wide range of varistor voltages are available in series (6.8 to 39V). ## **INTERNAL STRUCTURE** **==> picture [209 x 75] intentionally omitted <==** **----- Start of picture text -----**<br> Inner electrode Varistor body<br>(Palladium) (Zinc Oxide: ZnO semiconductor ceramics)<br>Sn plating<br>Ag termination<br>underlayer<br>Ni plating<br>**----- End of picture text -----**<br> ## **CIRCUITS SYMBOL** Low capacitance items are available in series (1.1pF to). World’s smallest 0402-, 0603-, 1005-, 1608-, 2012-chip types are available in series. - Excellent mount reliability. Good for Pb-free soldering. Adopted (Ni/Sn) electroplating. Achieved good solderability and solder heat resistance. - Can replace a Zener diode + capacitor combination. Reduced footprint and total mounting cost. ## **APPLICATIONS** - Electrostatic absorption - Pulse noise absorption ## **OPERATIONAL VOLTAGE RANGES** **==> picture [207 x 77] intentionally omitted <==** **----- Start of picture text -----**<br> 0402 type 25<br>0603 type 25<br>1005 type 19<br>1608 type 28<br>2012 type 28<br>0 5 10 15 20 25 30<br>Circuit voltage(V)<br>**----- End of picture text -----**<br> ## **TEMPERATURE RANGES** |Type|AVR-M1005/1608/2012|AVR-M0402/0603/AVRL| |---|---|---| |Operating|–40 to +125°C|–40 to +85°C| |Storage|–40 to +125°C|–40 to +85°C| ## **APPLICATION EXAMPLES** |Consumerproduct|Application| |---|---| |Mobile phone|Data terminal| |Digital video camera|LCD panel| |Digital camera|Touch panel| |PDA|Button and switch unit| |Note PC|Battery terminal| |DVD-ROM, CD-ROM|Audio-Video input-output terminal| |CD/MD/MP3 player|Microphone/receiver unit| |Game machine<br>~~-~~|Controller unit<br>~~-~~| ||CAN-BUS| ||ECU| |In-car equipment|Connector<br>Air conditioner panel| ||Car audio<br>Car navigation| ## **RECOMMENDED REFLOW SOLDERING CONDITIONS** |Tpeak||||||||| |---|---|---|---|---|---|---|---|---| |Tmelt||||||||| |Tpre||||||||| |||||||||| ||||peak|||||| ||tpre|||tmelt||||| ||Time (s)|||||||| ||||||Specification|||| |Item|||||For eutectic||For lead-free|| ||||||solder||solder|| |Tpre|Preheatingtemperature||||160 to 180°C||150 to 180°C|| |Tmelt|Solder meltingtemperature||||200°C||230°C|| |Tpeak|Peak temperature||||240°C max.||260°C max.|| |tpre<br>tmelt|Preheatingtime<br>Time to reach higher than the<br>solder meltingtemperature<br>Number ofpossible reflow cycles||||100s max.<br>30s max.<br>2 max.||120s max.<br>40s max.<br>2 max.|| • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm (4/11) ## **AVR-M TYPE** ## **PRODUCT IDENTIFICATION** AVR-M 1005 C 270 M T AAB (1) (2) (3) (4) (5) (6) (7) AVRM 1005 C 6R8 N T 101 N (1) (2) (3) (4) (5) (6) (7) (8) ~~a~~ (1) Series name ## (2) Dimensions L W **==> picture [109 x 50] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |0402|0.4||0.2mm| |0603|0.6||0.3mm| |1005|1.0||0.5mm| |1608|1.6||0.8mm| |2012|2.0||1.2mm| **----- End of picture text -----**<br> ## (3) Structure code ## **SHAPES AND DIMENSIONS 0402/0603/1005/1608/2012 TYPES** **==> picture [251 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |L| |LL|B|Ie.|>| |an|Fy id| |Dimensions in mm| |Weight| |Type|L|W|T|B min.| |(mg)typ.| |0402|0.4±0.02|0.2±0.02|0.2±0.02|0.07|0.1| |0603|0.6±0.03|0.3±0.03|0.3±0.03|0.1|0.2| |1005|1.0±0.05|0.5±0.05|0.5±0.05|0.1|1.2| |1608|1.6±0.1|0.8±0.1|0.8±0.1|0.2|5| |2012|2.0±0.2|1.25±0.2|1.0±0.2|0.2|15| **----- End of picture text -----**<br> ## **RECOMMENDED PC BOARD PATTERN** ## (4) Varistor voltage 270 27 10[0] V - (5) Varistor voltage tolerance **==> picture [94 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> ||| |---|---| |K|±10%| |M|±20%| |N|±30%| |(6) Packaging style| |T|Taping| |(5) Capacitance tolerance| |N|±30%| **----- End of picture text -----**<br> ## (6) Packaging style (7) Capacitance and TDK internal code ## (5) Capacitance tolerance **==> picture [251 x 103] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |b|a|b| |Dimensions in mm| |Type|a|b|c| |0402|0.2|0.15 to 0.2|0.18 to 0.2| |0603|0.25 to 0.35|0.2 to 0.3|0.25 to 0.35| |1005|0.3 to 0.5|0.35 to 0.45|0.4 to 0.6| |1608|0.6 to 0.8|0.6 to 0.8|0.6 to 0.8| |2012|0.9 to 1.2|0.7 to 0.9|0.9 to 1.2| **----- End of picture text -----**<br> • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm (5/11) ## **ELECTRICAL CHARACTERISTICS** |Part No.|Varistor voltage<br>(Breakdown voltage)<br>V1mA(V)[DC1mA]|Varistor voltage<br>(Breakdown voltage)<br>V1mA(V)[DC1mA]|Maximum<br>continuous voltage<br>(Rated voltage)<br>Vdc(V)<br>max.|Clamping<br>voltage<br>Vcl(V)<br>[8/20µs]|Maximum<br>energy<br>E(Joule)<br>[10/1000µs]<br>max.|Maximum<br>peak<br>current Ip(A)<br>[8/20µs]<br>max.|Capacitance<br>C(pF)<br>[1kHz, 1Vrms]<br>typ.|Packaging<br>quantities<br>(Taping)<br>(pieces/reel)| |---|---|---|---|---|---|---|---|---| |0402 type||||||||| |AVRM0402C6R8NT101N<br>AVRM0402C120MT330N|6.8<br>12|(4.76 to 8.84)<br>(9.6 to 14.4)|3.5<br>5.5|15[1A]<br>20[1A]|0.01<br>0.005|4<br>1|100(70 to 130)<br>33(23.1 to 43.9)|20,000| |0603 type||||||||| |AVRM0603C6R8NT331N|6.8|(4.76 to 8.84)|3.5|14[1A]|0.02|16|330(231 to 429)|| |AVRM0603C6R8NT101N|6.8|(4.76 to 8.84)|3.5|14[1A]|0.01|10|100(70 to 130)|| |AVRM0603C080MT101N|8|(6.4 to 9.6)|5.5|17[1A]|0.01|4|100(70 to 130)|| |AVRM0603C120MT101N|12.8|(10 to 15.6)|5.5|20[1A]|0.01|5|100(70 to 130)|15,000| |AVR-M0603C120MTAAB|12|(9.6 to 14.4)|7.5|23[1A]|0.01|1|33|| |AVRM0603C120MT150N|12.8|(10 to 15.6)|5.5|35[1A]|0.003|1|15(10.5 to 19.5)|| |AVRM0603C200MT150N|20|(16.0 to 24.0)|12|40[1A]|0.01|1|15(10.5 to 19.5) [1MHz]|| |1005 type||||||||| |AVRM1005C6R8NT331N|6.8|(4.76 to 8.84)|3.5|15[1A]|0.008|24|330(231 to 429)|| |AVRM1005C6R8NT101N|6.8|(4.76 to 8.84)|3.5|14[1A]|0.02|10|100(70 to 130)|| |AVR-M1005C080MTAAB|8|(6.4 to 9.6)|5.5|14[1A]|0.04|25|650|| |AVR-M1005C080MTADB|8|(6.4 to 9.6)|5.5|14[1A]|0.04|25|480|| |AVR-M1005C080MTABB|8|(6.4 to 9.6)|5.5|15[1A]|0.02|3|100|| |AVR-M1005C080MTACB<br>AVR-M1005C120MTACC|8<br>12|(6.4 to 9.6)<br>(9.6 to 14.4)|5.5<br>7.5|19[1A]<br>21[1A]|0.01<br>0.01|1<br>24|33<br>460[1MHz]|10,000| |AVR-M1005C120MTAAB|12|(9.6 to 14.4)|7.5|20[1A]|0.05|10|130|| |AVR-M1005C180MTAAB|18|(14.4 to 21.6)|11|30[1A]|0.06|16|120[1MHz]|| |AVRM1005C270KT101N|27|(24 to 30)|19|44[1A]|0.06|4|100(70 to 130)|| |AVR-M1005C270MTAAB|27|(21.6 to 32.4)|15|47[1A]|0.06|4|40|| |AVR-M1005C270MTABB|27|(21.6 to 32.4)|15|49[1A]|0.05|1|15|| |1608 type||||||||| |AVR-M1608C080MTAAB|8|(6.4 to 9.6)|5.5|15[2A]|0.09|30|650|| |AVR-M1608C120MT6AB|12|(9.6 to 14.4)|7.5|20[2A]|0.09|50|1050|| |AVR-M1608C120MT2AB|12|(9.6 to 14.4)|7.5|20[2A]|0.06|15|400|| |AVR-M1608C180MT6AB|18|(14.4 to 21.6)|11|30[2A]|0.1|30|600|| |AVR-M1608C220KT6AB|22|(19.8 to 24.2)|16|34[2A]|0.1|30|560|| |AVR-M1608C220KT2AB|22|(19.8 to 24.2)|16|37[2A]|0.03|10|210|| |AVR-M1608C270KT6AB|27|(24 to 30)|19|42[2A]|0.1|48|430|4,000| |AVR-M1608C270KT2AB|27|(24 to 30)|19|42[2A]|0.1|20|160|| |AVR-M1608C270KTACB|27|(24 to 30)|19|54[2A]|0.05|10|60|| |AVRM1608C270KT800M|27|(24 to 30)|19|53[2A]|0.02|28|80(64 to 96)|| |AVR-M1608C270MTAAB|27|(21.6 to 32.4)|17|52[2A]|0.05|2|30|| |AVR-M1608C270MTABB|27|(21.6 to 32.4)|17|52[2A]|0.05|2|15|| |AVRM1608C390KT271N|39|(35 to 43)|28|69[2A]|0.1|78|270(189 to 351)|| |2012 type||||||||| |AVR-M2012C120MT6AB|12|(9.6 to 14.4)|7.5|20[5A]|0.2|60|1000|| |AVR-M2012C220KT6AB|22|(19.8 to 24.2)|16|38[5A]|0.3|100|800|2,000| |AVR-M2012C390KT6AB|39|(35 to 43)|28|62[5A]|0.3|100|430|| ## **TERMINOLOGY** |**TERMINOLOGY**||| |---|---|---| |Item|Unit|Terminology| |Varistor voltage|V1mA|Voltage measured across the varistor| |(Breakdown voltage)|(V)|when DC1mA is applied.| |||Maximum DC voltage that can be applied| |Maximum continuous<br>voltage (Rated voltage)|Vdc<br>(V)|continuously.<br>Varistor leakage current: 50µA max.<br>(Within the range of maximum allowable| |||circuit voltage)| |Clamping voltage|Vcl<br>(V)|Voltage appearing across the varistor<br>when a pulse current (8/20µs1) of<br>specified peak value is applied.| |||Maximum energy that can be absorbed| |Maximum energy|E<br>(Joule)|without deteriorating varistor<br>characteristics when an impulse| |||(10/1000µs2)is applied once.| |||Maximum current that can be withstood| |Maximum peak current|Ip<br>(A)|without deteriorating varistor<br>characteristics when an impulse current| |||(8/20µs1) is applied once.| |Capacitance|C<br>(pF)|Capacitance measured at 1kHz<br>(or 1MHz) of oscillator frequency and<br>1Vrms of oscillator voltage.| **==> picture [199 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 1 8/20µs test waveform<br>100%<br>90%<br>50%<br>8µs<br>20µs<br>Time<br> 2 10/1000µs test waveform<br>100%<br>90%<br>50%<br>10µs<br>1000µs<br>Time<br>Current<br>Energy<br>**----- End of picture text -----**<br> • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm (6/11) ## **AVRL TYPE PRODUCT IDENTIFICATION** AVRL 10 1A 3R3 F T A ~~OO~~ (1) (2) (3) (4) (5) (6) (7) (1) Series name ## (2) Dimensions L W |04|0.40.2mm| |---|---| |06|0.60.3mm| |10|1.00.5mm| |16|1.60.8mm| ## (3) Maximum continuous voltage |(3) Maximum continuous voltage|(3) Maximum continuous voltage| |---|---| |1A|10Vdc| |1C|16Vdc| |1E|25Vdc| ## (4) Capacitance |(4) Capacitance|| |---|---| |1R1|1.1pF| |2R2|2.2pF| |3R3|3.3pF| |(5) Capacitance tolerance<br>6R8<br>6.8pF<br>~~CO~~|| |N|±0.3pF| |D|±0.5pF| |F|±1pF| |G|±2pF| |(6) Packaging style|| |T|Taping| ## **SHAPES AND DIMENSIONS** ||||L||||| |---|---|---|---|---|---|---|---| |W<br>B<br>~~TI~~||||||S<br>os|| ||||||||| |T|||||||| |Type|||L|W|T|Dimensions in mm<br>B min.<br>Weight<br>(mg)typ.|| |0402|||0.4±0.02|0.2±0.02|0.2±0.02|0.07|0.1| |0603|||0.6±0.03|0.3±0.03|0.3±0.03|0.1|0.2| |1005|||1.0±0.05|0.5±0.05|0.5±0.05|0.1|1.2| |1608|||1.6±0.1|0.8±0.1|0.8±0.1|0.2|5| ## **RECOMMENDED PC BOARD PATTERN** ||||c|||| |---|---|---|---|---|---|---| ||b|a|b|||| |||||||Dimensions in mm| |Type|||a||b|c| |0402|||0.2||0.15 to 0.2|0.18 to 0.2| |0603|||0.25 to 0.35||0.2 to 0.3|0.25 to 0.35| |1005|||0.3 to 0.5||0.35 to 0.45|0.4 to 0.6| |1608|||0.6 to 0.8||0.6 to 0.8|0.6 to 0.8| - (7) Varistor voltage and TDK internal code ## **ELECTRICAL CHARACTERISTICS** |Part No.|Capacitance<br>C(pF)<br>[1MHz, 1Vrms]|Maximum continuous voltage<br>(Rated voltage)<br>Vdc(V)<br>max.|Insulation resistance<br>Rdc(M)<br>[3Vrms]<br>min.|Varistor voltage<br>V1mA(V)[DC1mA]<br>typ.|Packaging quantities<br>(Taping)<br>(pieces/reel)| |---|---|---|---|---|---| |0402 type|||||| |AVRL041E1R1NTA|1.1[0.8 to 1.4]|25|10|39|20,000| |0603 type|||||| |AVRL061E1R1NTA|1.1[0.8 to 1.4]|25|10|39|15,000| |1005 type|||||| |AVRL101A1R1NTA|1.1[0.8 to 1.4]|10|10|90|| |AVRL101A1R1NTB|1.1[0.8 to 1.4]|10|10|39|| |AVRL101C2R2DTA|2.2[1.7 to 2.7]|16|10|90|10,000| |AVRL101A3R3FTA|3.3[2.3 to 4.3]|10|10|27|| |AVRL101A6R8GTA|6.8[4.8 to 8.8]|10|10|27|| |1608 type|||||| |AVRL161A1R1NTA|1.1[0.8 to 1.4]|10|10|90|| |AVRL161A1R1NTB<br>AVRL161A3R3FTA|1.1[0.8 to 1.4]<br>3.3[2.3 to 4.3]|10<br>10|10<br>10|39<br>27|4,000| |AVRL161A6R8GTA|6.8[4.8 to 8.8]|10|10|27|| ## **TERMINOLOGY** |**TERMINOLOGY**||| |---|---|---| |Item|Unit|Terminology| |Capacitance|C<br>(pF)|Capacitance measured at 1MHz of oscillator frequency and 1Vrms<br>of oscillator voltage.| |Maximum continuous<br>voltage (Rated voltage)|Vdc<br>(V)|Maximum DC voltage that can be applied continuously.<br>Varistor leakage current: 50µA max.<br>(Within the range of maximum allowable circuit voltage)| |Insulation resistance|Rdc<br>(M)|Insulation resistance appearing across the varistor when specified<br>voltage is applied.| |Varistor voltage<br>(Breakdown voltage)|V1mA<br>(V)|Voltage measured across the varistor when DC1mA is applied.| • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm (7/11) ## **TYPICAL ELECTRICAL CHARACTERISTICS CURRENT vs. VOLTAGE CHARACTERISTICS** **==> picture [199 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> V1mA:12V<br>10 [–1]<br>V1mA:8V<br>10 [–2]<br>V1mA:27V<br>10 [–3] V1mA:22V<br>V1mA:18V<br>10 [–4]<br>10 [–5]<br>10 [–6]<br>10 [–7]<br>0 10 20 30 40<br>Voltage(V)<br>100<br>Current(A)<br>**----- End of picture text -----**<br> ## **IMPEDANCE vs. FREQUENCY CHARACTERISTICS** **==> picture [209 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>15pF 6.8pF 3.3pF<br>30pF<br>1000<br>100<br>10<br>1<br>1050pF<br>160pF<br>0.1 400pF<br>650pF<br>0.01<br>1 10 100 1000 10000<br>Frequency(MHz)<br>)Ω<br>Impeadance(<br>**----- End of picture text -----**<br> ## **TRANSMISSION CHARACTERISTICS** ## **CAPACITANCE vs. FREQUENCY CHARACTERISTICS** **==> picture [472 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10000<br>1050pF<br>0<br>3.3pF<br>650pF<br>6.8pF 1000 400pF<br>–10<br>15pF 160pF<br>30pF<br>–20<br>1050pF<br>650pF 100 30pF<br>–30 400pF<br>160pF 15pF<br>–40 6.8pF<br>10<br>3.3pF<br>–50<br>–60 1<br>1 10 100 1000 10000 1 10 100 1000 10000<br>Frequency(MHz) Frequency(MHz)<br>Insertion loss(dB) Capacitance(pF)<br>**----- End of picture text -----**<br> • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm (8/11) ## **ELECTROSTATIC DISCHARGE TESTS TEST CONDITIONS** 150pF, 330 contact discharge Charged voltage /8kV, 0.1s interval ## **AVR-M0603 TYPE** **==> picture [203 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>10<br>0<br>–10<br>–20<br>–30<br>–40<br>–50<br>–60<br>0.1 1 10 100<br>Number of discharge(Times)<br>V1mA/V1mA(%)<br>Δ<br>**----- End of picture text -----**<br> ## **AVR-M1608 TYPE** **==> picture [203 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>10<br>0<br>–10<br>–20<br>–30<br>–40<br>–50<br>–60<br>0.1 1 10 100<br>Number of discharge(Times)<br>V1mA/V1mA(%)<br>Δ<br>**----- End of picture text -----**<br> ## **MEASURING CIRCUIT** **==> picture [252 x 372] intentionally omitted <==** **----- Start of picture text -----**<br> Discharge gun<br>10MΩ 330Ω Test<br>sample<br>High voltage 150pF<br>DC power supply<br>ESD<br>ESD simulator simulator<br>AVR-M1005 TYPE<br>20<br>10<br>0<br>–10<br>–20<br>–30<br>–40<br>–50<br>–60<br>0.1 1 10 100<br>Number of discharge(Times)<br>AVRL101A3R3F<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0.1 1 10 100<br>Number of discharge(Times)<br>V1mA/V1mA(%)<br>Δ<br>Capacitance(pF) [1MHz]<br>**----- End of picture text -----**<br> ## **AVR-M1005 TYPE** ## **AVRL101A3R3F** • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm (9/11) ## **ELECTROSTATIC ABSORPTION CHARACTERISTICS DISCHARGE CURRENT WAVEFORM** **==> picture [241 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7 150pF, 330Ω,<br>Contact discharge, Test level 1<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>–1<br>–50 0 50 100 150 200 250 300<br>Time(ns)<br>Discharge current(A)<br>**----- End of picture text -----**<br> ## **DISCHARGE VOLTAGE WAVEFORM** **==> picture [250 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300 Open waveform<br>250 AVR-M1005C120MTAAB / V1mA:12V<br>200 AVR-M1005C080MTAAB / V 1m A:8V<br>150 Zener diode /Vz:6.2V<br>100<br>50<br>0<br>–50<br>–50 0 50 100 150 200 250 300<br>Time(ns)<br>Voltage(V)<br>**----- End of picture text -----**<br> ## **WAVEFORM PARAMETERS [IEC61000-4-2]** ||Test<br>1<br>2<br>3<br>4|level|ESD Charge<br>voltage<br>(kV)<br>2<br>4<br>6<br>8|First peak current<br>of discharge<br>(A)<br>7.5<br>15<br>22.5<br>30|Rise time<br>(ns)<br>0.7 to 1.0<br>0.7 to 1.0<br>0.7 to 1.0<br>0.7 to 1.0| |---|---|---|---|---|---| ## **MEASURING CIRCUIT** **==> picture [241 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> 10MΩ 330Ω<br>High voltage 150pF<br>DC power supply<br>ESD simulator<br>Discharge gun<br>Test<br>sample<br>60dB attenuator 50Ω<br>ESD<br>simulator Oscilloscope<br>I/O impedance: 50Ω<br>Frequency range: DC to 18GHz<br>**----- End of picture text -----**<br> ## **ESD ABSORPTION CHARACTERISTICS** ## **COMPARISON OF VARIOUS ELEMENTS** **==> picture [252 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>250 269V<br>271V 258V down<br>200 down down<br>150<br>100<br>101V 93V 96V<br>50 down down down<br>0<br>Open waveform AVR-M1005C080MTAAB AVR-M1005C120MTAAB Zener diode/Vz:6.2V<br>Peak 316 45 58 47<br>Average 117 16 24 21<br>(voltage)<br>Peak Peak voltage:Peak voltage of standing up part<br>voltage Average voltage : Average voltage of 30 to 100ns<br>ESD (Electro Static Discharge)<br>Average absorption characteristics of V1mA-8V<br>voltage<br>is superior to Vz-6.2V Zener diode.<br>30 100 (ns)<br>V)(Clamping voltage<br>**----- End of picture text -----**<br> • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm (10/11) ## **MERITS OF REPLACEMENT FROM ZENER DIODE** (1) Reduction in the number of parts REDUCTION EXAMPLES Zener diode+capacitor Chip varistor EXAMPLE OF REPLACEMENT AT AUDIO TERMINAL ## **APPLICATION EXAMPLES** ## **SMART PHONE** **==> picture [174 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> To LCD driver<br>Microphone/Receiver<br>LCD panel<br>Button Data terminal<br>: Chip varistor<br>**----- End of picture text -----**<br> **==> picture [377 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> Audio<br>Audio/out<br>connector<br>Audio AUDIO/VIDEO<br>AMP<br>t a a l Monitor Video1 Video2 Video3 Video5<br>OUT in in in in<br>Audio Digi<br>Audio/out<br>connector<br>Audio Video Video Video Video<br>AMP aleeCig<br>L L/MONO L/MONO L/MONO L/MONO<br>Audio Audio Audio Audio Audio<br>epi [(]<br>R<br>; : Chip varistor<br>**----- End of picture text -----**<br> (2) Improved electrostatic absorption capability COMPARE DATA OF CHIP VARISTOR AND ZENER DIODE ABOUT IC PROTECTION **==> picture [38 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> : Chip varistor<br>**----- End of picture text -----**<br> **==> picture [185 x 89] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [–7]<br>AVR-M1608C120MT6AB<br>10 [–6]<br>10 [–5]<br>With Zener Diode<br>10 [–4]<br>10 [–3]<br>0 2 4 6 8 10 12 14<br>ESD voltage [(] kV [)]<br>)Ω<br>of tested circuit(<br>Insulation resistance<br>**----- End of picture text -----**<br> CMOS: D74HC04C ESD generator : Noise Laboratory Co.,Ltd., ESS -630A 200pF-0Ω method model equipment Contact type discharge ESD applied point: Vcc-ground • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm (11/11) ## **APPLICATION EXAMPLES USB 2.0** **==> picture [224 x 61] intentionally omitted <==** **----- Start of picture text -----**<br> VDD<br>USB cable<br>D–<br>USB IC D+<br>USB connector<br>F.G. : Chip varistor<br>**----- End of picture text -----**<br> ## **MEASURING CIRCUIT** **==> picture [195 x 57] intentionally omitted <==** **----- Start of picture text -----**<br> Sample<br>IC<br>USB2.0 Test<br>board on board<br>PC Test set<br>Ze : Chip varistor<br>**----- End of picture text -----**<br> ## **WITHOUT VARISTOR** ## **WITH VARISTOR AVRL101A3R3FTA (3.3pF)** ## **AVRL101A6R8GTA (6.8pF)** • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm
Updated at April 23, 2026
TDK Corporation is a globally recognized leader in electronic components and magnetic materials. Founded in 1935 to commercialize ferrites, the Tokyo-based company has evolved into a comprehensive manufacturer of high-performance passive components, sensors, and power electronics. TDK’s advanced materials technology serves as the foundation for its extensive portfolio, driving innovation across automotive, industrial, consumer electronics, and communication technologies. Our selection of TDK components heavily features their industry-leading passive components, with a primary focus on magnetics. TDK excels in manufacturing reliable inductive solutions, offering a vast array of power inductors and RF inductors optimized for demanding power management and high-frequency applications. Furthermore, their expertise in electromagnetic compatibility is showcased through a comprehensive range of EMC and RFI suppression products. This includes common mode chokes, power line filters, and specialized shielding materials designed to ensure superior signal integrity in complex designs. Beyond inductors and filtering components, TDK provides robust circuit protection and sensing solutions essential for modern engineering. The portfolio includes precision temperature sensing and compensation NTC thermistors, alongside TVS varistors and inrush current limiting components that safeguard sensitive electronics. Complemented by fixed value inductors, supercapacitors, and charging coils, TDK's versatile product offering delivers the reliability and performance required for sophisticated circuit design.
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