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AUIRLZ44ZL
Power MOSFET, N Channel, 55 V, 51 A, 0.0135 ohm, TO-262, Through Hole
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 80W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-262
- Drain Source Voltage Vds: 55V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 51A
- Drain Source On State Resistance: 0.0135ohm
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.54 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
PD - 97682
## **AUTOMOTIVE GRADE**
## AUIRLZ44Z
## **Features**
## HEXFET[®] Power MOSFET
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
|**V(BR)DSS**|**55V**|
|---|---|
|**RDS(on) typ.**<br>**max.**|**11m**Ω|
||**13.5m**Ω|
|**I**~~**D**~~|**51A**|
- Automotive Qualified *
## **Description**
Specifically designed for Automotive applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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D<br>S<br>D<br>G<br>TO-220AB<br>AUIRLZ44Z<br>**----- End of picture text -----**<br>
|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @ TC = 25°C|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~ae~~|51<br>~~a~~<br>~~ae~~|A<br>~~ae~~|
|ID @ TC = 100°C|Continuous Drain Current, VGS@ 10V<br>~~oF~~<br>~~ae~~|36<br>~~oF~~<br>~~ae~~||
|IDM<br>~~+.~~|~~Pulsed Drain Current~~<br>~~ae~~<br>~~+.~~<br>~~+_!_*+-NN~~|204<br>~~ae~~||
|PD @TC = 25°C<br>~~+.~~|Power Dissipation<br>~~+.~~<br>~~+_!_*+-NN~~|80|W|
|~~+.~~<br>~~a~~|Linear Derating Factor<br>~~+.~~<br>~~+_!_*+- NN~~<br>~~[So~~<br>~~a~~|0.53<br>~~[So~~<br>~~a~~|W/°C<br>~~[So~~|
|VGS<br>~~a~~|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~es~~<br>~~aa~~|± 16<br>~~es~~<br>~~a~~<br>~~ee ae~~|V<br>~~es~~<br>~~ae~~|
|EAS(Thermally Limited)<br>~~a~~|Single Pulse Avalanche Energy<br>~~es~~<br>~~aa~~|78<br>~~es~~<br>~~a~~<br>~~ee ae~~|mJ<br>~~es~~<br>~~ae~~|
|EAS(tested )<br>~~a~~|Single Pulse Avalanche EnergyTested Value<br>~~aa~~|110<br>~~a~~<br>~~ee ae~~<br>~~rs~~||
|IAR<br>|~~Avalanche Current~~<br>~~a~~<br>~~ee~~|See Fig.12a, 12b, 15, 16<br>~~ee ae~~<br>~~ee~~<br>~~rs~~<br>~~po~~|A<br>~~ae~~<br>~~ee~~|
|EAR<br>~~po~~|Repetitive Avalanche Energy<br>~~ee~~<br>~~po~~||mJ<br>~~ee~~<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55 to + 175<br>~~rs~~<br>~~po~~|°C<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds (1.6mm from case )<br>~~po~~|300<br>~~po~~||
|~~po~~|Soldering Temperature, for 10 seconds (1.6mm from case )<br>Mounting Torque, 6-32 or M3 screw<br>~~po~~<br>~~a~~|10 lbf in (1.1N m)<br>~~po~~<br>~~a~~|~~po~~<br>~~a~~|
HEXFET[®] is a registered trademark of International Rectifier.
- Qualification standards can be found at http://www.irf.com/
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**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|**Static Electrical Characteristics @ TJJ = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static Electrical Characteristics @ TJJ = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static Electrical Characteristics @ TJJ = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|
|---|---|---|
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>55<br>–––<br>–––<br>V<br>ΔV(BR)DSS/ΔTJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.05<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>11<br>13.5<br>~~m~~Ω<br>–––<br>–––<br>20<br>~~m~~Ω<br>–––<br>–––<br>22.5<br>~~m~~Ω<br>VGS(th)<br>Gate Threshold Voltage<br>1.0<br>–––<br>3.0<br>V<br>gfs<br>Forward Transconductance<br>27<br>–––<br>–––<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>**Dynamic Electrical Characteristics @ TJ = 25°C(unless otherwise specified)**<br>VGS= 5.0V, ID= 30A<br>VGS= 4.5V, ID= 15A<br>VDS= 25V, ID= 31A<br>VGS= 16V<br>VGS= -16V<br>**Conditions**<br>VGS= 0V, ID= 250μA<br>Reference to 25°C, ID= 1mA<br>VGS= 10V, ID= 31A<br>VDS= VGS, ID= 250μA<br>VDS= 55V, VGS= 0V<br>VDS= 55V, VGS= 0V, TJ= 125°C<br>~~GO~~<br>~~GO~~<br>~~GOD QO CO~~<br>~~Rs~~<br>~~GD~~<br>~~QO GO~~<br>~~es~~<br>~~GOD I OD~~<br>~~es~~<br>~~GOD I~~<br>~~ED(©~~<br>~~es~~<br>~~GOD~~<br>~~GOD~~<br>~~©~~<br>~~ee~~<br>~~Rs~~<br>~~RD~~<br>~~GO GO~~<br>~~Rs~~<br>~~DG~~<br>~~QO GO~~<br>~~ee~~<br>~~OE~~<br>~~|~~<br>~~|~~<br>~~C—O~~<br>~~i~~<br>~~a~~<br>~~ee~~<br>~~PT~~|||
|Qg|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>Total Gate Charge<br>–––<br>24<br>36<br>ID= 31A<br>**Conditions**<br>~~GO~~<br>~~GO PQ~~<br>~~es~~||
|Qgs<br>Qgd<br>td(on)|Gate-to-Source Charge<br>–––<br>7.5<br>–––<br>nC<br>Gate-to-Drain("Miller")Charge<br>–––<br>12<br>–––<br>Turn-On DelayTime<br>–––<br>14<br>–––<br>VDS= 44V<br>VGS= 5.0V<br>VDD= 50V<br>~~es~~<br>~~es~~<br>~~@~~<br>~~Rs~~||
|tr|Rise Time<br>–––<br>160<br>–––<br>ID= 31A<br>~~Rs~~||
|td(off)<br>tf<br>LD<br>LS<br>Ciss<br>Coss<br>Crss|S<br>D<br>G<br>Turn-Off DelayTime<br>–––<br>25<br>–––<br>ns<br>Fall Time<br>–––<br>42<br>–––<br>Internal Drain Inductance<br>–––<br>4.5<br>–––<br>Between lead,<br>nH<br>6mm (0.25in.)<br>Internal Source Inductance<br>–––<br>7.5<br>–––<br>from package<br>and center of die contact<br>Input Capacitance<br>–––<br>1620<br>–––<br>Output Capacitance<br>–––<br>230<br>–––<br>Reverse Transfer Capacitance<br>–––<br>130<br>–––<br>pF<br>RG= 7.5Ω<br>VGS= 5.0V<br>VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~Rs~~<br>~~es~~<br>~~®~~<br>~~+ |S~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~||
|Coss<br>Coss<br>Cosseff.|Output Capacitance<br>–––<br>860<br>–––<br>Output Capacitance<br>–––<br>180<br>–––<br>Effective Output Capacitance<br>–––<br>280<br>–––<br>VGS= 0V, VDS= 1.0V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 44V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 0V to 44V<br>~~es~~<br>~~Po~~<br>~~es~~<br>~~|rr—“COCCSC~~<br>~~es~~||
|**Diode Characteristics**|||
||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**||
|IS<br>ISM<br>VSD<br>trr<br>Qrr<br>ton|Continuous Source Current<br>–––<br>–––<br>51<br>(Body Diode)<br>A<br>Pulsed Source Current<br>–––<br>–––<br>204<br>(Body Diode)<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse RecoveryTime<br>–––<br>21<br>32<br>ns<br>Reverse RecoveryCharge<br>–––<br>16<br>24<br>nC<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>TJ= 25°C, IS= 31A, VGS= 0V<br>TJ= 25°C, IF= 31A, VDD= 28V<br>di/dt = 100A/μs<br>MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~SSS~~<br>~~ee)~~<br>~~es~~<br>~~DD (OO~~<br>~~re eee~~<br>~~ee~~<br>~~es~~<br>~~®~~<br>~~|~~||
Notes: ~~)~~ a Repetitive rating; pulse width limited by © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. @ Limited by TJmax, starting TJ = 25°C, L = 0.166mH © This value determined from sample failure population, RG = 25 Ω , IAS = 31A, VGS =10V. Part not starting TJ = 25°C, L = 0.166mH, RG = 25J = 25°C, L = 0.166mH, RG = 25= 25°C, L = 0.166mH, RG = 25G = 25= 25 Ω , IAS = 31A, VGSAS = 31A, VGS= 31A, VGSGS =10V. recommended for use above this value.
This value determined from sample failure population, starting TJ = 25°C, L = 0.166mH, RG = 25J = 25°C, L = 0.166mH, RG = 25= 25°C, L = 0.166mH, RG = 25G = 25= 25 Ω , IAS = 31A, VGSAS = 31A, VGS= 31A, VGSGS =10V. R θ is measured at TJ approximately 90°C.
® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
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## **Qualification Information[†]**
|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments:<br>This part<br>number(s)<br>passed Automotive<br>qualification.<br>IR’s Industrial and Consumer qualification<br>level is granted by extension of the higher Automotive<br>level.||
|**Moisture Sensitivity Level**||TO-220AB|N/A|
|**ESD**|Machine Model|Class M4(+/- 425V )<br>†††<br>(per AEC-Q101-002)||
||Human Body Model|Class H1C(+/- 2000V )<br>†††<br>(per AEC-Q101-001)||
||Charged Device Model|Class C5(+/- 1125V )<br>†††<br>(per AEC-Q101-005)||
|**RoHS Compliant**||Yes||
- Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
- ††† Highest passing voltage
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1000<br>VGS<br>ee ee eee TOP 15V10V<br>a ee 8.0V<br>5.0V<br>100 4.5V<br>alll<br>4.0V<br>3.5V<br>BOTTOM 3.0V<br>t yg<br>10 tt |<br>OZ<br>Ft<br>1 3.0V<br>≤ 60μs PULSE WIDTH<br>Tj = 25°C<br>aliiPET mail<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>1000.0<br>PEt fF 4<br>ee es es T J = 25 ee °C ee ee eee eee<br>100.0 | | ae T = 175°C<br>J<br>) | A CC<br>10.0<br>J2<br>AF<br>Bm re V DS = 20V<br>≤ 60μs PULSE WIDTH<br>1.0<br>fpey<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
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1000<br>VGS<br>TOP 15V10V ee<br>8.0V a<br>5.0V<br>4.5V<br>email<br>100 4.0V<br>3.5V<br>BOTTOM 3.0V<br>eS<br>yg<br>ee<br>10 0<br>3.0V<br>≤ 60μs PULSE WIDTH<br>Tj = 175°C<br>|elie ne |<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 2.** Typical Output Characteristics
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60<br>TJ = 175°C<br>aa<br>40<br>T = 25°C<br>J<br>20 L earn<br>VDS = 10V<br>380μs PULSE WIDTH<br>/<br>0<br>0 10 20 30 40 50<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>
**Fig 4.** Typical Forward Transconductance Vs. Drain Current
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2500 12<br>VGS = 0V, f = 1 MHZ ID= 31A<br>CCiss = C = Cgs + Cgd, C ds SHORTED 10 V DS = 44V<br>2000 rss gd VDS= 28V<br>Coss = Cds + Cgd VDS= 11V<br>Ciss 8<br>1500<br>FETT | CK<br>6<br>1000<br>4<br>CT TO) = AAG<br>500 SU | 2<br>Coss<br>Crss<br>Se 0<br>0<br>0 10 20 30 40 50<br>1 10 100<br> QG Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 100<br>TJ = 175°C<br>100μsec<br>10.0 10<br>T = 25°C<br>J 1msec<br>1<br>1.0<br>Tc = 25°C<br>10msec<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1<br>0.1<br>1 10 100 1000<br>0.2 0.6 1.0 1.4 1.8<br>VDS , Drain-toSource Voltage (V)<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
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60 2.5<br>ID = 30A<br>50 V GS = 5.0V<br>TELE EL ELL 2.0 eT TELTTE ETD<br>TN Ht<br>40<br>ae saueennenend<br>30 TLLEPNEEEEE 1.5 EEE<br>TTT EEN EEE<br>20<br>1.0<br>10<br>TON | beet<br>ELE ELLENNY CLEPEEE<br>0 0.5<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>1 D = 0.50<br>0.20<br>0.10 R 1 R1 R 2 R2 R 3R3 Ri (°C/W) τ i (sec)<br>0.1 0.05 τ J τ J τ C τ 0.736 0.000345<br>0.02 τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 0.687 0.00147<br>=e 0.01<br>Ci= τ i / Ri 0.449 0.007058<br>Ci i / Ri<br>0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>0.001 FT fT TE SE ET EE PE EET 2. Peak Tj = P dm x Zthjc + Tc<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>y: 2V0VGS Jk<br>tp 0.01 Ω<br>a e<br>**----- End of picture text -----**<br>
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Fig 12a. Unclamped Inductive Test Circuit<br>V(BR)DSS<br>_. tp<br>IAS |<br>Fig 12b. Unclamped Inductive Waveforms<br>**----- End of picture text -----**<br>
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QG<br>al y QGS “* QGD ><br>VG<br>; 4<br>Charge<br>Fig 13a. Basic Gate Charge Waveform =<br>L<br>VCC<br>DUT<br>0<br>1K<br>nad<br>**----- End of picture text -----**<br>
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320<br> I<br>D<br>TOP 3.7A<br> 5.7A<br>240160 KuaNACE \ BOTTOM EE 31A<br>80<br>“RS<br>0 SSL<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c. Maximum Avalanche Energy<br>Vs. Drain Current<br>3.0<br>2.5<br>ESUHREEEEE<br>ID = 250μA<br>2.0<br>PST<br>1.5<br>SE<br>1.0<br>PPLE<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>PATE<br>VGS(th) Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig 14.** Threshold Voltage Vs. Temperature
**Fig 13b.** Gate Charge Test Circuit
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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>assuming Δ Tj = 25°C due to<br>0.01<br>avalanche losses. Note: In no<br>10 case should Tj be allowed to<br>0.05 exceed Tjmax<br>0.10<br>1<br>0.1 | TEL EE ETE EE EEE EET LT<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15. Typical Avalanche Current Vs.Pulsewidth<br>100<br>TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>(For further info, see AN-1005 at www.irf.com)<br>BOTTOM 1% Duty Cycle<br>1. Avalanche failures assumption:<br>80 ID = 31A<br> Purely a thermal phenomenon and failure occurs at a<br> temperature far in excess of Tjmax. This is validated for<br> every part type.<br>60 S He 2. Safe operation in Avalanche is allowed as long asTjmax is<br> not exceeded.<br>SO 3. Equation below based on circuit and waveforms shown in<br>40 Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>SAE avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>20 voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>SSS 7. Δ T = Allowable rise in junction temperature, not to exceed<br>ELL SSN.<br>0 Tjmax (assumed as 25°C in Figure 15, 16).<br>25 50 75 100 125 150 175 tav = Average time in avalanche.<br> D = Duty cycle in avalanche = tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
- ZthJC(D, tav) = Transient thermal resistance, see figure 11)
## **PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]**
- **EAS (AR) = PD (ave)·tav**
**Fig 16.** Maximum Avalanche Energy Vs. Temperature
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Driver Gate Drive<br>P.W.<br>D.U.T + { P.W. + Period ——— — D = —— Period<br>) [©)] Circuit • Layout Considerations | V t t GS=10<br>| — - • GroundLow StrayPlane Inductance<br> • CurrentLow LeakageTransformerInductance ®@ D.U.T. ISD Waveform<br>+<br>Reverse<br>@ - a | = - ° + RecoveryCurrent r Body Diode ForwardCurrent di/dt 7\ ——<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 we VDD<br>• Re-Applied<br>Re • Driver same type as D.U.T. + Voltage Body Diode Forward Drop ma<br>(4 • i/dt controlled by Rg Vp p - I<br>•<br>D.U.T. - Device Under Test e e<br>Isp controlled by Duty Factor "D" ® t Ripple ≤ 5% ISD<br>**----- End of picture text -----**<br>
## **Fig 17.**
## Reverse Recovery Test Circuit or N-Channel HEXFET ® ower MOSFETs
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-<br>≤ 1 ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>
## **Fig 18a.** Switching Time Test Circuit
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VDS<br>90%<br>10%<br>VGS | |<br>la h > ! ab l e<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**Fig 18b.** Switching Time Waveforms
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TO-220AB packages are not recommended for Surface Mount Application.
**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/**
www.irf.com
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## **Ordering Information**
|**Base part**<br>**number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRLZ44Z|TO-220|Tube|**Quantity**<br>50|AUIRLZ44Z|
www.irf.com
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www.irf.com
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Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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