AUIRLS3036
Power MOSFET, N Channel, 60 V, 195 A, 0.0019 ohm, TO-263 (D2PAK), Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Qualification: AEC-Q101
- Power Dissipation: 380W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 380W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0019ohm
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 195A
- Drain Source On State Resistance: 0.0019ohm
- Automotive Qualification Standard: AEC-Q101
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.22 € |
| Current stock | 10+ |
| Lead time | 30 days |
## ~~Cinfin eon~~
## **Features**
- Advanced Process Technology
- Ultra Low On-Resistance
- Logic Level Gate Drive
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
## **AUTOMOTIVE GRADE**
## AUIRLS3036 ~~—~~
HEXFET[® ] Power MOSFET **VDSS 60V RDS(on) typ. 1.9m** **max. 2.4m** **ID (Silicon Limited) 270A** ~~==~~ **ID (Package Limited) 195A**
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
D S G D[[2]] Pak AUIRLS3036
- Automotive Qualified *
## **Description**
Specifically designed for Automotive applications, this HEXFET[®] G Power MOSFET utilizes the latest processing techniques to achieve D[[2]] Pak extremely low on-resistance per silicon area. Additional features of AUIRLS3036 this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These **G D S** features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety ~~-——|~~ Gate Drain Source of other applications
**Standard Pack Base part number Package Type Orderable Part Number Form Quantity** Tube 50 AUIRLS3036 AUIRLS3036 D[2] -Pak ~~en~~ Tape and Reel Left 800 AUIRLS3036TRL **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
|**Symbol**<br>**Parameter**||**Max.**||**Units**||
|---|---|---|---|---|---|
|ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V (Silicon Limited)||270||||
|ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V (Package Limited)||190<br>195||A||
|IDM<br>Pulsed Drain Current||1100||||
|PD@TC= 25°C<br>Maximum Power Dissipation||380||W||
|Linear Derating Factor||2.5||W/°C||
|VGS<br>Gate-to-SourceVoltage<br>± 16<br>V<br>EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) <br>290<br>mJ<br>IAR<br>Avalanche Current<br>See Fig.14,15, 22a, 22b<br>A<br>EAR<br>Repetitive Avalanche Energy <br>mJ<br>dv/dt<br>Peak Diode Recovery <br>8.0<br>V/ns<br>TJ<br>Operating Junction and<br>-55 to + 175<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>300<br>~~——— aa~~<br>~~a~~||||||
|**Thermal Resistance**||||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>0.4<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount) <br>–––<br>40<br>~~oo~~||||||
|HEXFET® is a registered trademark of Infineon.||||||
|1<br>2015-11-4<br>*****Qualification standards can be found atwww.infineon.com<br>~~—_—~~||||||
~~Cinfin eon~~
AUIRLS3036 ~~LL~~
|Qg<br>~~**es**~~|TotalGate Charge<br>~~es~~|–––<br>~~es~~|91<br>~~es~~|140<br>~~es~~|nC<br>~~fo~~|ID= 165A<br>VDS= 30V<br>VGS= 4.5V<br>~~fo~~|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~**es**~~<br>~~ee~~|Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|31<br>~~es~~|–––<br>~~es~~|||
|gs<br>Qgd<br>~~**es**~~<br>~~ee~~|Gate-to-DrainCharge<br>~~es~~|–––<br>~~es~~|51<br>~~es~~|–––<br>~~es~~|||
|gd<br>Qsync<br>~~**es**~~<br>~~ee~~<br>~~ee~~|TotalGate Charge Sync.(Qg–Qgd)<br>~~es~~|–––<br>~~es~~|40<br>~~es~~|–––<br>~~es~~|||
|sync<br>td(on)<br>~~**es**~~<br>~~ee~~<br>~~a~~|Turn-On DelayTime<br>~~es~~|–––<br>~~es~~|66<br>~~es~~|–––<br>~~es~~|ns<br>~~fo~~<br>~~pf~~<br>~~oo~~|VDD= 39V<br>ID= 165A<br>RG= 2.1<br>VGS= 4.5V<br>~~fo~~<br>~~pf~~<br>~~oo~~|
|d(on)<br>tr<br>~~ee~~<br>~~a~~|Rise Time|–––|220|–––|||
|td(off)<br>~~a~~<br>~~ee~~|Turn-Off DelayTime|–––|110|–––|||
|d(off)<br>tf<br>~~a~~<br>~~ee~~<br>~~es~~<br>~~**e**s~~|Fall Time<br>~~es~~<br>~~en~~|–––<br>~~es~~<br>~~Os~~|110<br>~~es~~|–––<br>~~es~~|||
|Ciss<br>~~ee~~<br>~~es~~<br>~~**e**s~~<br>~~a~~|Input Capacitance<br>~~es~~<br>~~en~~<br>~~a~~|–––11210<br>~~es~~<br>~~Os~~<br>~~tsts~~|11210<br>~~es~~<br>~~tsts~~|11210–––<br>~~es~~|pF<br>~~oo~~<br>|<br>~~Gs~~|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz<br>~~oo~~|
|Coss<br>~~es~~<br>~~**e**s~~<br>~~e~~<br>~~a~~|Output Capacitance<br>~~es~~<br>~~en~~<br>~~nn~~<br>~~a~~|–––<br>~~es~~<br>~~Os~~<br>~~nn~~<br>~~tsts~~|1020<br>~~es~~<br>~~nn~~<br>~~tsts~~|–––<br>~~es~~<br>~~nn~~|||
|Crss<br>~~**e**s~~<br>~~e~~<br>~~a~~|Reverse Transfer Capacitance<br>~~en~~<br>~~nn~~<br>~~a~~|–––<br>~~Os~~<br>~~nn~~<br>~~tsts~~|500<br>~~nn~~<br>~~tsts~~|–––<br>~~nn~~|||
|Coss eff.(ER)<br>~~**e**s~~<br>~~e~~<br>~~a~~<br>~~es~~|Effective Output Capacitance (Energy Related)<br>~~en ~~<br>~~nn~~<br>~~a~~<br>~~nD~~|–––<br> ~~Os~~<br>~~nn~~<br>~~tsts~~<br>~~nD~~|1430<br>~~nn~~<br>~~tsts~~<br>~~nD~~<br>~~OD~~|–––<br>~~nn~~<br>~~nD~~<br>~~(OO~~||VGS= 0V, VDS= 0V to 48V<br>~~oo~~|
|Coss eff.(TR)<br>~~a~~<br>~~es~~|Effective Output Capacitance(Time Related)<br>~~a~~<br>~~nD~~|–––<br>~~tsts~~<br>~~nD~~|1880<br>~~tsts~~<br>~~nD~~<br>~~OD~~|–––<br>~~nD~~<br>~~(OO~~||VGS= 0V,VDS= 0V to 48V|
|**Diode Characteristics**<br>~~esnD~~<br>~~OD (OO Gs~~<br>~~esnD~~<br>~~TDI(OODI~~|||||||
|~~es~~|**Parameter **<br>~~nD~~|**Min.**<br>~~nD~~<br>~~TD~~|**Typ. M**<br>~~nD~~<br>~~I~~|**. Max.**<br>~~nD~~<br>~~(OOD~~|**Units**<br>~~nD~~<br>~~I~~|**Conditions**<br>~~nD~~|
|IS<br>~~es~~<br>~~fl~~|Continuous Source Current<br>(BodyDiode)<br>~~nD~~<br>~~fl~~|–––<br>~~nD~~<br>~~TD ~~<br>~~fl~~|––– 270<br>~~nD~~<br> ~~I ~~<br>~~fl~~|––– 270<br>~~nD~~<br> ~~(OOD ~~<br>~~fl~~|A<br>~~nD~~<br> ~~I~~<br>~~fl~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~nD~~|
|ISM<br>~~fl~~<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~fl~~<br>~~nD~~|–––<br>~~fl~~<br>~~UD~~|–––<br>~~fl~~<br>~~(UD(OD~~|1100<br>~~fl~~<br>~~(UD(OD~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~nD~~|–––<br>~~UD~~|–––<br>~~(UD(OD~~|1.3<br>~~(UD(OD~~|V|TJ= 25°C,IS= 165A,VGS= 0V|
|trr<br>~~a~~<br>~~fe~~|Reverse Recovery Time<br>~~nD ~~<br>~~fe~~|–––<br> ~~UD ~~<br>~~fe~~|62<br> ~~(UD(OD~~<br>~~fe~~|–––<br>~~(UD(OD~~<br>~~fe~~|ns<br>~~fe~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 165A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C<br>~~eee~~|
|||–––<br>~~fe~~|66<br>~~fe~~|–––<br>~~fe~~|||
|Qrr<br>~~fe~~<br>~~a ee~~|Reverse Recovery Charge<br>~~fe~~<br>~~ee~~|–––<br>~~fe~~<br>~~ee~~|310<br>~~fe~~<br>~~ee~~<br>~~eee~~|–––<br>~~fe~~<br>~~ee~~<br>~~eee~~|nC<br>~~fe~~<br>~~ee~~<br>~~eee~~||
|||–––<br>~~ee~~|360<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|||
|IRRM<br>~~a ee~~|ReverseRecovery Current<br>~~ee~~|–––<br>~~ee~~|4.4<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|A<br>~~ee~~<br>~~eee~~||
|ton<br>~~Ce~~|Forward Turn-On Time<br>~~Ce~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~Ce~~|||||
**Notes:**
- Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
- Repetitive rating; pulse width limited by max. junction temperature.
- Limited by TJmax, starting TJ = 25°C, L = 0.021mH, RG = 25, IAS = 165A, VGS =10V. Part not recommended for use above this value. ISD 165A, di/dt 430A/µs, VDD V(BR)DSS, TJ 175°C.
- Pulse width 400µs; duty cycle 2%.
- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994
- R is measured at TJ approximately 90°C.
- RJC value shown is at time zero.
2
2015-11-4
AUIRLS3036
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1000<br>VGS<br>TOP 15V<br>10V<br>4.5V<br>4.0V<br>100 3.5V<br>3.3V<br>3.0V<br>BOTTOM 2.7V<br>10<br>1 2.7V<br>60µs PULSE WIDTH60µs PULSE WIDTH<br>Tj = 25°C<br>0.1<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>4.5V 4.5V<br>100 4.0V 3.5V 4.0V 3.5V<br>3.3V 3.3V<br>3.0V 3.0V<br>BOTTOM 2.7V BOTTOM 2.7V<br>10 100<br>1 2.7V<br>2.7V<br>60µs PULSE WIDTH60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.1 10 fil<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics<br>1000 2.5<br>ID = 165A<br>V GS = 10V<br>100 T J = 175°C ee 2.0 LLL<br>10 1.5<br>rofEE TTL<br>T J = 25°C<br>1 1.0<br>er<br>VDS = 25V<br>60µs PULSE WIDTH<br>0.1 0.5<br>1 Filan 2 3 4 5 6 -60 LLL -40 -20 0 20 40 60 80 100 120 140160 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br>
**Fig. 2** Typical Output Characteristics
**Fig. 4** Normalized On-Resistance vs. Temperature
**Fig. 3** Typical Transfer Characteristics
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100000 5.0<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED ID= 165A VDS= 48V<br>C rss = C gd Sane? VDS= 30V<br>Coss = Cds + Cgd 4.0<br>10000 C iss<br>3.0<br>C oss<br>2.0<br>1000 al Crss [>=<br>Sm = GEE<br>Set 7<br>1.0<br>lt<br>100 0.0<br>1 10 100 0 20 40 60 80 100 120<br>VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage
3
2015-11-4
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infineon<br>AUIRLS3036<br>1000 10000<br>——<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>TJ = 175°C<br>100 1000<br>100µsec<br>1msec<br>10 T J = 25°C 100<br>Limited by<br>package<br>10msec<br>1 10<br>Tc = 25°C DC<br>V GS = 0V Tj = 175°CSingle Pulse<br>0.1 1<br>0.0 0.5 1.0 1.5 2.0 2.5 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 7 Typical Source-to-Drain Diode Fig 8. Maximum Safe Operating Area<br>300 75<br>Id = 5mA<br>250 Limited By Package<br>70<br>Se] OE<br>200<br>HEE MDA<br>150 65<br>ETRE UW<br>100<br>CN ATT<br>60<br>50<br>coy ELITE<br>55<br>0<br>-60 -40 -20 0 20 40 60 80 100 120 140160 180<br>25 pitt 50 75 100 tis 125 150 175<br>TJ , Temperature ( °C )<br> TC , Case Temperature (°C)<br>Fg 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage<br>1200<br>3.0<br>ID<br>TOP 27A<br>1000<br>2.5 50A<br>BOTTOM 165A<br>2.0 800 NUTT Me<br>1.5 600<br>NET<br>1.0 400<br>NENT<br>0.5 200<br>INN OT<br>UL PPS<br>0.0 0<br>-10 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>ID, Drain Current (A)<br>ISD, Reverse Drain Current (A) ID, Drain-to-Source Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 11.** Typical COSS Stored Energy
**Fig 12.** Maximum Avalanche Energy vs. Drain Current
4 ~~a~~
2015-11-4
~~Cinfineon~~
AUIRLS3036 ~~LL~~
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1<br>D = 0.50 Lee<br>Ri (°C/W) I (sec)<br>0.1 0.20 titer<br>R1R1 R2R2 R3R3 R4R4 0.01115 0.000009<br>0.10 J J C C 0.08360 0.000080<br>0.05 1 1 2 2 3 3 4 4 0.18950 0.001295<br>Ci= iRi<br>0.01 0.02 Ci= iRi 0.11519 0.006726<br>0.01<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>pe<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs avalanche<br>nip<br>pulsewidth, tav, assuming Tj = 150°C and<br>100 0.01 A Tstart =25°C (Sing | le Pulse)<br>0.05<br>0.10<br>ase SET<br>10 SUT tL<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>peee ATImp<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14. Avalanche Current vs. Pulse width<br>300 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP Single Pulse (For further info, see AN-1005 at www.infineon.com)<br>BOTTOM 1.0% Duty Cycle 1. Avalanche failures assumption:<br>250 I D = 165A Purely a thermal phenomenon and failure occurs at a temperature far in<br>T__ excess of Tjmax. This is validated for every part type.<br>200 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.<br>N NGS 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.<br>150<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>INA<br>during avalanche).<br>100 6. Iav = Allowable avalanche current.<br>CONC 7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>25°C in Figure 13, 14).<br>50<br>PEREERNWNEE tav = Average time in avalanche.<br>D = Duty cycle in avalanche = tav ·f<br>0 PELLET ASSN ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) = T/ ZthJCthJC<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 13, 14).
**PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) =** **T/ ZthJCthJC Iav = 2** **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav**
**Fig 15.** Maximum Avalanche Energy vs. Temperature
2015-11-4
5
~~Cinfin eon~~
AUIRLS3036 ~~Ty~~
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3.02.5 14<br>IF = 110A<br>12 V R = 51V<br>2.5 NOELLE TJ = 25°C |<br>10 T J = 125°C le<br>2.0 SSRN |<br>INN NY 8 ow | |<br>ID = 250µAD = 250µA = 250µA<br>1.5 ID = 1.0mAD = 1.0mA = 1.0mA<br>I D = 1.0A 6<br>1.0<br>4<br>0.5 ALLE ELLENHERNGE ELLENHERNGEHERNGE 2 T rtA[if<br>-75 -50 -25 0 25 50 75 100 125 150 175 200 0 100 200 300 400 500<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>Fig 16. Threshold Voltage vs. Temperature<br>Fig. 17 - Typical Recovery Current vs. diff/dt<br>12 900<br>IF = 165A IF = 110A<br>VR = 51V 800 VR = 51V<br>10 TJ = 25°C 700 T J = 25°C<br>TJ = 125°C TJ = 125°C<br>ear 600 TT<br>8<br>500<br>6<br>PL eyvane | 400 a3era<br>300<br>4 yt ae<br>| =<br>200<br>| YH<br>2 tt 100 ee<br>0 100 200 300 400 500 0 100 200 300 400 500<br>diF /dt (A/µs) diF /dt (A/µs)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>IRRM (A) QRR (nC)<br>**----- End of picture text -----**<br>
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3.02.5 NOELLE<br>2.0 SSRN<br>INN NY<br>ID = 250µAD = 250µA = 250µA<br>1.5 ID = 1.0mAD = 1.0mA = 1.0mA<br>I D = 1.0A<br>1.0<br>0.5 ALLE ELLENHERNGE ELLENHERNGEHERNGE<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 16.** Threshold Voltage vs. Temperature
**Fig. 17** - Typical Recovery Current vs. diff/dt
**Fig. 18** - Typical Recovery Current vs. dif/dt
**Fig. 19** - Typical Stored Charge vs. dif/dt
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600<br>IF = 165A<br>VR = 51V<br>500 T J = 25°C<br>TJ = 125°C<br>400<br>nee<br>300<br>200<br>0 100 200 300 400 500<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>
**Fig. 20** - Typical Stored Charge vs. dif/dt
6 2015-11-4 ~~re~~
~~Cinfir~~
AUIRLS3036 ~~_~~
**Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>20V dL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br>
**Fig 22a.** Unclamped Inductive Test Circuit
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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>
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IAS<br>**----- End of picture text -----**<br>
**Fig 22b.** Unclamped Inductive Waveforms
**Fig 23a.** Switching Time Test Circuit
**Fig 23b.** Switching Time Waveforms
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Vds H Id<br>Vgs<br>iI<br>|<br>Vgs(th)<br>|<br>I{ !I 'j i! ':i<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 24a.** Gate Charge Test Circuit
**Fig 24b.** Gate Charge Waveform
2015-11-4
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AUIRLS3036 ~~LL~~
## ~~Cinfin eon~~
**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches))
## **D[2] Pak (TO-263AB) Part Marking Information**
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Part Number AUIRLS3036<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br>
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLS3036 ~~LL~~
## ~~Cinfineon~~
## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches))
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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>
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FEED DIRECTION<br>**----- End of picture text -----**<br>
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13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLS3036 ~~ie&»&»«€©=5©€=a2 &~~ **Qualification Information**
|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||D2-Pak|MSL1|
|**ESD**|Machine Model|Class M4 (+/- 800V)† <br>AEC-Q101-002||
||Human Body Model|Class H3A (+/- 6000V)† <br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
- Highest passing voltage.
|**Date**|**Comments**|
|---|---|
|4/2/2014|<br>Added "Logic Level Gate Drive" bullet in the features section on page 1<br><br>Updated package outline on page 8.<br><br>Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6.<br><br>Updated data sheet with new IR corporate template|
|11/4/2015|<br>Updated datasheet with corporate template<br><br>Corrected orderingtable onpage 1.|
**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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2015-11-4
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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