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AUIRLR3110Z
Power MOSFET, N Channel, 100 V, 42 A, 0.011 ohm, TO-252AA, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 140W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 140W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.011ohm
- Transistor Case Style: TO-252AA
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 42A
- Drain Source On State Resistance: 0.011ohm
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.2 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
AUIRLR3110Z AUIRLU3110Z ~~po~~ **AUTOMOTIVE GRADE** ## ~~Cinfineon~~ HEXFET[® ] Power MOSFET ## **Features** - Advanced Process Technology **VDSS 100V** Ultra Low On-Resistance Logic Level Gate Drive **RDS(on) typ. 11m** 175°C Operating Temperature **max. 14m** Fast Switching **ID (Silicon Limited) 63A** Repetitive Avalanche Allowed up to Tjmax ~~oe~~ **ID (Package Limited) 42A** Lead-Free, RoHS Compliant Automotive Qualified * D D **Description** Specifically designed for Automotive applications, this HEXFET® S S G D Power MOSFET utilizes the latest processing techniques to G achieve extremely low on-resistance per silicon area. Additional D-Pak I-Pak features of this design are a 175°C junction operating temperature, AUIRLR3110Z AUIRLU3110Z fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient **G D S** and reliable device for use in Automotive applications and a wide Gate Drain Source ~~>}~~ variety of other applications. ~~-~~ |**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**| |---|---|---|---|---| |||**Form**|**Quantity**|| |AUIRLU3110Z|I-Pak|Tube|75|AUIRLU3110Z| |AUIRLR3110Z|D-Pak|Tube|75|AUIRLR3110Z| |||Tape and Reel Left|3000|AUIRLR3110ZTRL| ## **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. |otherwise specified.|||| |---|---|---|---| |**Symbol**|**Parameter**|**Max.**|**Units**| |ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)|63|A| |ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)|45|| |ID @TC= 25°C|Continuous Drain Current, VGS @10V(Package Limited)|42|| |IDM|Pulsed Drain Current|250|| |PD@TC= 25°C<br>~~——————~~|Maximum Power Dissipation<br>~~——————~~|140<br>~~re~~|W<br>~~re~~| |~~——————~~|Linear Derating Factor<br>~~——————~~|0.95<br>~~re~~|W/°C<br>~~re~~| |VGS<br>~~——————~~|Gate-to-SourceVoltage<br>~~——————~~|± 16<br>~~re~~|V<br>~~re~~| |EAS<br>~~——————~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~——————~~|110<br>~~re~~|mJ<br>~~re~~| |EAS(Tested)<br>~~——————~~|Single Pulse Avalanche EnergyTested Value<br>~~——————~~|140<br>~~re~~|| |IAR<br>~~——————~~<br>~~a~~|Avalanche Current<br>~~——————~~<br>~~a~~|See Fig.15,16, 12a, 12b<br>~~re~~<br>~~a~~|A<br>~~re~~<br>~~a~~| |EAR<br>~~a~~<br>~~pf~~|Repetitive Avalanche Energy <br>~~a~~<br>~~pf~~||mJ<br>~~a~~| |TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55 to + 175|°C| |~~pf~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~pf~~|300|| HEXFET® is a registered trademark of Infineon. ***** Qualification standards can be found at www.infineon.com 1 2015-10-29 ~~Cinfin eon~~ AUIRLR/U3110Z ~~ll~~ **Static @ TJ = 25°C (unless otherwise specified)** |~~es~~||||||| |---|---|---|---|---|---|---| |Qg<br>~~es~~|Total Gate Charge|–––|34|48|nC|ID= 38A<br>VDS= 50V<br>VGS= 4.5V| |g<br>Qgs<br>~~es~~<br>~~es~~|Gate-to-Source Charge|–––|10|–––||| |Qgd<br>~~es~~|Gate-to-Drain Charge|–––|15|–––||| |gd<br>td(on)<br>~~es~~<br>~~es~~|Turn-On Delay Time<br>~~es~~|–––<br>~~es~~|24<br>~~es~~|–––<br>~~es~~|ns<br>|VDD= 50V<br>ID= 38A<br>RG= 3.7<br>VGS= 4.5V<br>| |d(on)<br>tr<br>~~es~~<br>~~es~~|RiseTime<br>~~es~~|–––<br>~~es~~|110<br>~~es~~|–––<br>~~es~~||| |td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>~~es~~<br>|–––<br>~~es~~<br>|33<br>~~es~~<br>|–––<br>~~es~~<br>||| |d(off)<br>tf<br>~~es~~<br>~~es~~|Fall Time<br>|–––<br>|48<br>|–––<br>||| |LD<br>~~eso's~~|Internal Drain Inductance<br>~~o's~~|–––<br>~~o's~~|4.5<br>~~o's~~|–––<br>~~o's~~|nH<br>~~o's~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~o's~~<br>~~ee~~| |LS<br>~~o's~~<br>~~es~~|Internal Source Inductance<br>~~o's~~|–––<br>~~o's~~|7.5<br>~~o's~~|–––<br>~~o's~~||| |Ciss<br>~~es~~<br>~~escere~~|Input Capacitance<br>~~cere~~|–––<br>~~cere~~|3980<br>~~cere~~|–––<br>~~cere~~|pF<br>~~cere~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~ee~~<br>~~Po~~| |Coss<br>~~es~~<br>~~escere~~|OutputCapacitance<br>~~cere~~|–––<br>~~cere~~|310<br>~~cere~~|–––<br>~~cere~~||| |Crss<br>~~es~~<br>~~escere~~<br>~~es~~|Reverse Transfer Capacitance<br>~~cere~~|–––<br>~~cere~~|130<br>~~cere~~|–––<br>~~cere~~||| |Coss<br>~~es~~<br>~~cere~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~cere~~|–––<br>~~cere~~|1820<br>~~cere~~|–––<br>~~cere~~||VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>~~ee~~<br>~~Po~~<br>~~Po~~| |Coss<br>~~cere~~<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~cere~~<br>~~en~~|–––<br>~~cere~~|170<br>~~cere~~|–––<br>~~cere~~||VGS =0V, VDS =80V ƒ=1.0MHz<br>~~Po~~<br>~~Po~~<br>~~Po~~| |Coss eff.<br>~~cere~~<br>~~es~~<br>~~es~~|Effective Output Capacitance<br>~~cere~~<br>~~en~~|–––<br>~~cere~~|320<br>~~cere~~|–––<br>~~cere~~||VGS=0V,VDS=0Vto 80V<br>~~Po~~<br>~~Po~~| |**Diode Characteristics**<br>~~esen~~<br>~~Po~~||||||| |~~a~~|**Parameter **<br>~~a~~|**Min.**|**Typ. M**|**. Max.**|**Units**|**Conditions**| |IS<br>~~a ~~|Continuous Source Current<br>(Body Diode)<br> ~~a~~|–––|–––|63|A<br>~~(~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~(Ot~~| |ISM<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~ID~~|–––<br>~~QO~~|–––<br>~~QO~~|250<br>~~(~~||| |VSD<br>~~es~~<br>~~$s~~|Diode Forward Voltage<br>~~ID~~<br>~~$s~~|–––<br>~~QO~~<br>~~$s~~|–––<br>~~QO~~<br>~~$s~~|1.3<br>~~(~~<br>~~rH]~~|V<br>~~(~~<br>~~rH]~~|TJ =25°C,IS=38A,VGS =0V<br>~~(Ot~~<br>~~rH]~~<br>~~—E~~| |trr<br>~~es~~<br>~~$s~~<br>~~es~~|Reverse Recovery Time<br>~~ID~~<br>~~$s~~<br>~~I~~|–––<br>~~QO ~~<br>~~$s~~<br>~~I~~|34<br> ~~QO~~<br>~~$s~~<br>~~I~~|51<br>~~(~~<br>~~rH]~~<br>~~I~~|ns<br>~~(~~<br>~~rH]~~<br>~~I~~|TJ= 25°C ,IF= 38A, VDD= 50V<br>nC di/dt = 100A/µs<br>~~(Ot~~<br>~~rH]~~<br>~~—E~~| |Qrr<br>~~$s~~<br>~~es~~|Reverse RecoveryCharge<br>~~$s~~<br>~~I~~|–––<br>~~$s~~<br>~~I~~|42<br>~~$s~~<br>~~I~~|63<br>~~rH]~~<br>~~I~~|nC di/dt = 100A/<br>~~rH]~~<br>~~I~~|| |ton<br>~~$s~~<br>~~es~~|Forward Turn-On Time<br>~~$s~~<br>~~I~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~$s rH]~~<br>~~—E~~<br>~~I~~||||| ## **Notes:** Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax , starting TJ = 25°C, L = 0.16mH, RG = 25, IAS = 38A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 . - R is measured at TJ approximately 90°C - Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 42A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 2015-10-29 AUIRLR/U3110Z **==> picture [497 x 564] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>100 8.0V 4.5V 8.0V 4.5V<br>3.5V 3.5V<br>3.0V 3.0V<br>2.7V 100 2.7V<br>10 BOTTOM 2.5V BOTTOM 2.5V<br>1<br>ci at 10 FeUe<br>2.5V<br>0.1<br>2.5V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.01 1<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics<br>150<br>1000<br>TJ = 25°C<br>125<br>100 [EE TJ = 175 ° C =<br>100<br>10 Wee . 75 bee TJ = 175 ° C<br>50<br>1 T J = 25°C<br>VDS = 25V 25 VDS = 10V<br>60µs PULSE WIDTH 300µs PULSE WIDTH<br>0.1 q ct 0 "7af--<br>0 2 4 6 8 10 12 14 16 0 25 50 75<br>ID,Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)<br>ID, Drain-to-Source Current<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 2** Typical Output Characteristics **Fig. 3** Typical Transfer Characteristics **Fig. 4** Typical Forward Trans conductance Vs. Drain Current 3 2015-10-29 AUIRLR/U3110Z ~~lL~~ ## ~~Cinfin eon~~ **==> picture [207 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>ID= 38AD= 38A= 38A<br>4.0 ef) oly<br>VDS= 80VDS= 80V= 80V<br>VDS= 50VDS= 50V= 50V<br>3.0<br>2.0<br>Find<br>1.0 fp<br>Anne<br>0.0<br>0 10 20 30 40<br> QG Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> **==> picture [502 x 587] intentionally omitted <==** **----- Start of picture text -----**<br> 100000 5.0<br>VCGS iss = C= 0V, f gs + Cgd= 1 MHZ, C ds SHORTED ID= 38AD= 38A= 38A<br>10000 CC rss oss = C= C ds gd + C gd 4.0 ef) oly VDS= 80VDS= 80V= 80V y<br>Ciss VDS= 50VDS= 50V= 50V<br>3.0<br>1000<br>Coss<br>2.0<br>ce Find<br>Crss<br>100<br>ret 1.0 fp<br>Baim Anne<br>10 0.0<br>1 10 100 0 10 20 30 40<br>VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br> Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 T J = 175°C<br>100 100µsec<br>10 EBC TJ = 25°C aa 1msec<br>10msec<br>10 DC<br>1 TP a =|<br>AP Tc = 25 Aw ° C<br>V GS = 0V Tj = 175Single Pulse°C<br>0.1 cass 1 Ar<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance(pF)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode Forward Voltage **Fig 8.** Maximum Safe Operating Area 4 2015-10-29 ~~ee~~ AUIRLR/U3110Z J J 1 1 Ci= **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>60 Limited By Package<br>50<br>=)<br>aaa<br>40<br>30<br>20<br>S<br>10<br>FECES<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br> **==> picture [208 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>ID = 63A<br>VGS = 10V<br>2.5<br>(ae<br>2.0<br>y<br>1.5<br>1.0 va<br>0.5 PATE<br>-60 -40 -20 0 20 40 60 80 100 120 140160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br> **Fig 9.** Maximum Drain Current Vs. Case Temperature **Fig 10.** Normalized On-Resistance Vs. Temperature **==> picture [422 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>D = 0.50<br>Sn<br>0.1 0.200.100.05 "| J J1 1 R 1 R 1 2 R2 2 R 2 CC Ri (°C/W) 0.383 0.000267 i (sec)<br>0.02 Ci= Ci= i Ri iRi 0.667 0.003916<br>0.01<br>0.01<br>SINGLE PULSE Notes:<br>ail ( THERMAL RESPONSE ) =| 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Zain<br>0.001<br>ertt | OOO<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-10-29 ~~=~~ ~~Cinfineon~~ AUIRLR/U3110Z ~~ee~~ **==> picture [510 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>300<br>VDS L DRIVER ID<br>TOP 4.4A<br>250<br>NERREE 6.5A<br>R G D.U.T + BOTTOM 38A<br>WV - [V][DD] 200 BNGREEE<br>IAS A<br>20V<br>tp 0.01 150<br>& : \<br>) | NTT<br>100<br>Fig 12a. Unclamped Inductive Test Circuit<br>SST<br>PASAT<br>V(BR)DSS 50<br><_< a<br>tp — > EEE<br>0 L) LE BKL<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> IAS **Fig 12c.** Maximum Avalanche Energy vs. Drain Current **Fig 12b.** Unclamped Inductive Waveforms **==> picture [172 x 117] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds<br>Vgs<br>Vgs(th)<br>AN<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 13a.** Gate Charge Waveform **==> picture [212 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.5<br>TOT<br>2.0<br>ROSSA<br>1.5<br>ID = 100µA<br>I D = 250µA<br>1.0 I D = 1.0mA BaaNGeSKN<br>ID = 1.0A<br>0.5<br>0.0<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br> **Fig 14.** Threshold Voltage Vs. Temperature **Fig 13b.** Gate Charge Test Circuit 6 2015-10-29 ~~Cinfin eon~~ AUIRLR/U3110Z ~~ll~~ **==> picture [432 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>ST Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>0.01<br>10<br>0.05<br>0.10<br>Pal OT<br>Allowed avalanche Current vs avalanche<br>1 pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>comet PeeTitet il<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br> **Fig 15.** Typical Avalanche Current Vs. Pulse width ## **Notes on Repetitive Avalanche Curves , Figures 15, 16:** ## **(For further info, see AN-1005 at www.infineon.com)** **==> picture [204 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>TOP Single Pulse<br>BOTTOM 1% Duty Cycle<br>125<br>ID = 38A<br>HE<br>100<br>75<br>SST<br>50 ASSL<br>25<br>PSSST<br>0 TTP NK<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Fig 16.** Maximum Avalanche Energy 1. Avalanche failures assumption: - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). - tav = Average time in avalanche. - D = Duty cycle in avalanche = tav ·f - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) ## **PD (ave) = 1/2 ( 1.3·BV·Iav) =** **T/ ZthJC Iav = 2** **T/ [1.3·BV·Zth]** **EAS (AR) = PD (ave)·tav** Vs. Temperature 7 2015-10-29 ~~re~~ ~~—__———————~~ ## AUIRLR/U3110Z ~~lll~~ **Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs **Fig 18a.** Switching Time Test Circuit **Fig 18b.** Switching Time Waveforms 8 2015-10-29 ## ~~Cinfin eon~~ ## AUIRLR/U3110Z ~~ll~~ **D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches)) ## **D-Pak (TO-252AA) Part Marking Information** **==> picture [330 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AULR3110Z<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|sd<br>Lot Code<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-29 ## ~~Cinfineon~~ ## AUIRLR/U3110Z ~~ll~~ **I-Pak (TO-251AA) Package Outline** (Dimensions are shown in millimeters (inches) ## **I-Pak (TO-251AA) Part Marking Information** **==> picture [331 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AULU3110Z<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>|Sd<br>Lot Code<br>**----- End of picture text -----**<br> Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-29 ~~Cinfineon~~ AUIRLR/U3110Z ~~ll~~ **D-Pak (TO-252AA) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) **==> picture [429 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 13 INCH<br>16 mm<br>**----- End of picture text -----**<br> NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 2015-10-29 AUIRLR/U3110Z ~~ateelc~~ **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||D-Pak|MSL1| |||I-Pak|| |**ESD**|Machine Model|Class M4 (+/- 700V)† <br>AEC-Q101-002|| ||Human Body Model|Class H1C (+/- 2000V)† <br>AEC-Q101-001|| ||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| - Highest passing voltage. ## **Revision History** |**Date**|**Comments**| |---|---| |2/28/2014|<br>Added "Logic Level Gate Drive" bullet in the features section on page 1<br><br>Updated data sheet with new IR corporate template| |4/9/2014|<br>Updated package outline on page 9 & page 10<br><br>Updatedqualification table- I-pak from "N/A" to "MSL1" onpage 12| |10/29/2015|<br>Updated datasheet with corporate template<br><br>Corrected orderingtable onpage 1.| ## **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 2015-10-29
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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