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AUIRLL014NTR
Power MOSFET, N Channel, 55 V, 2 A, 0.14 ohm, SOT-223, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 4Pins
- Channel Type: N Channel
- Power Dissipation: 1W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.14ohm
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 55V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2A
- Drain Source On State Resistance: 0.14ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.245 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
AUIRLL014N ~~_—~~ **AUTOMOTIVE GRADE** HEXFET[® ] Power MOSFET ## ~~Cinfin eon~~ ## **Features** |Advanced Planar Technology<br>Low On-Resistance<br>Logic Level Gate Drive<br>Dynamic dv/dt Rating<br>150°C Operating Temperature<br>Fast Switching||||||**VDSS**<br>**55V**<br>**RDS(on) max.**<br>**0.14**<br>**ID**<br>**2.0A**<br>~~——~~| |---|---|---|---|---|---|---| |Fully Avalanche Rated||||||| |Repetitive Avalanche Allowed up to Tjmax||||||D| |Lead-Free, RoHS Compliant||||||| |Automotive Qualified *||||||S| |**Description**||||||G<br>D| |Specifically designed for Automotive applications, this cellular<br>design of HEXFET® Power MOSFETs utilizes the latest||||||SOT-223<br>AUIRLL014N| |processing techniques to achieve low on-resistance per silicon<br>area. This benefit combined with the fast switching speed and<br>ruggedized device design that HEXFET power MOSFETs are<br>well known for, provides the designer with an extremely efficient<br>and reliable device for use in Automotive and a wide variety of|**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~-—}——_—~~|||||| |other applications<br>**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**<br>AUIRLL014N<br>SOT-223<br>Tape and Reel<br>~~ee~~|**Standard Pack**<br>**Quantity**<br>2500|||||**Orderable Part Number**<br>AUIRLL014NTR| |**Absolute Maximum Ratings**||||||| |Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress|||Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress|||| |ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not||||ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|| |implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance||||implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance||| |and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless||||||| |otherwise specified.||||||| |**Symbol**<br>**Parameter**||||||**Max.**<br>**Units**| |ID@ TA= 25°C<br>Continuous Drain Current, VGS@ 10V||||||2.8| |ID @TA= 25°C<br>Continuous Drain Current,VGS @10V<br>ID @TA= 70°C<br>Continuous Drain Current,VGS @10V||||||A<br>2.0<br>1.6| |IDM<br>Pulsed Drain Current||||||16| |PD@TA= 25°C<br>Maximum Power Dissipation (PCB Mount)<br>2.1<br>PD@TA= 25°C<br>Maximum Power Dissipation (PCB Mount)<br>1.0<br>Linear DeratingFactor(PCB Mount) <br>8.3<br>mW/°C<br>W<br>~~er~~||||||| |VGS<br>Gate-to-SourceVoltage||||||± 16<br>V| |EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) ||||||32<br>mJ| |IAR<br>Avalanche Current||||||2.0<br>A| |dv/dt<br>Peak Diode Recoverydv/dt<br>7.2<br>V/ns<br>TJ<br>Operating Junction and<br>-55 to + 150<br>°C<br>TSTG<br>StorageTemperatureRange<br>EAR<br>Repetitive Avalanche Energy <br>0.1<br>mJ<br>~~Soo~~||||||| |**Thermal Resistance**||||||| |**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount,steadystate) <br>90<br>120<br>RJA<br>Junction-to-Ambient(PCB Mount,steadystate) <br>50<br>60<br>~~——————————~~||||||| |HEXFET® is a registered trademark of Infineon.||||||| |*****Qualification standards can be found atwww.infineon.com<br>~~———_—_~~||||||| 1 ~~———_—_~~ 2015-10-29 ~~Cinfineon~~ AUIRLL014N ~~|~~ **Static @ TJ = 25°C (unless otherwise specified)** **==> picture [551 x 448] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |Parameter|Min.|Typ. Max. Units|Conditions| |es|ns|Is|rs|Ot| |es|V(BR)DSS|Rs|Drain-to-Source Breakdown Voltage|55|–––|–––|V|VGS|= 0V, ID|= 250µA| |a|V(BR)DSS/TJ|Breakdown Voltage Temp. Coefficient|––– 0.015 –––|QO|V/°C Reference to 25°C, ID = 1mA| |–––|–––|0.14|VGS = 10V, ID = 2.0A | |a|a|ee| |RDS(on)|Static Drain-to-Source On-Resistance|a|–––|–––|0.20||VGS = 5.0V, ID = 1.2A | |a|–––|a|–––|0.28|e|e|VGS = 4.0V, ID = 1.0A | |a|VGS(th)|Gate Threshold Voltage|1.0|–––|es|2.0|V|VDS = VGS, ID = 250µA| |es|gfs|Forward Trans|conducta|rs|nce|2.|Ps|3|–––|–––|QO|S|VDS = 25V, ID = 1.0A| |–––|–––|25|[=][ 55V, V][GS]|[=][ 0V ]| |a|IDSS|Drain-to-Source Leakage Current|Pt|–––|–––|250|µA|PO|V|[V][DS]|DS|= 44V,VGS|= 0V,TJ|= 150°C| |Gate-to-Source Forward Leakage|–––|–––|100|[=][ 16V ]| |Bo|IGSS|eeff|Gate-to-Source Reverse Leakage|–––|–––|-100|nA|Pe|V|[V][GS]|GS|=|-16V| |Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)| |es|Qg|ee|Total Gate Charge|–––|9.5|14|ID = 2.0A| |Qgs|Gate-to-Source Charge|–––|1.1|1.7|nC|VDS = 44V| |ee| |es|Qgd|ee|Gate-to-Drain Charge|–––|3.0|4.4|VGS = 10V,|See Fig|6|and|9|| |es|td(on)|ee|Turn-On Delay Time|–––|5.1|–––|VDD = 28V| |tr|Rise Time|–––|4.9|–––|ID = 2.0A| |es|ns| |es|td(off)|Turn-Off Delay Time|–––|14|–––|RG = 6.0| |es|tf|es|Fall Time|–––|2.9|–––|RD = 14See Fig. 10 | |Ciss|Input Capacitance|–––|230|–––|VGS = 0V| |esee| |es|Coss|Output Capacitance|–––|66|–––|pF|VDS = 25V| |Crss|Reverse Transfer Capacitance|–––|30|–––|ƒ = 1.0MHz, See Fig.5| |es| |Diode Characteristics| |ee|Parameter|nD|Min.|ts|Typ. M|(OO|ax.|Units|Conditions| |Continuous Source Current|MOSFET symbol| |IS|(Body Diode)|–––|–––|1.3|showing the| |A| |Pulsed Source Current|integral reverse| |>|ISM|(Body Diode)|HL|–––|–––|16|p-n junction diode.|a| |es|VSD|ee|Diode Forward Voltage|–––|rs|Q|–––|1.0|V|TJ|= 25°C,IS = 2.0A,VGS|= 0V | |trr|Reverse Recovery Time|–––|41|61|ns|TJ = 25°C ,IF = 2.0A,| |Sees|Qrr|en|Reverse Recovery Charge|–––|73|110|nC|di/dt = 100A/µs|| |ton|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)| |es ee| **----- End of picture text -----**<br> **Notes:** Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) VDD = 25V, starting TJ = 25°C, L = 4.0mH, RG = 25, IAS = 4.0A. (See fig. 12) - ISD 2.0A, di/dt 170A/µs, VDD V(BR)DSS, TJ 150°C. - Pulse width 300µs; duty cycle 2%. - When mounted on FR-4 board using minimum recommended footprint. - When mounted on 1 inch square copper board, for comparison with other SMD devices. 2 2015-10-29 AUIRLL014N **==> picture [223 x 573] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br> VGS<br> TOP 15V<br> 10V<br> 7.0V<br> 5.5V<br> 4.5V<br> 4.0V<br> 3.5V<br> BOTTOM 3.0V<br>10 ee<br> 20µs PULSE WIDTH<br> 3.0V<br>1 | T = 25°CJ<br>0.1 1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>Fig. 1 Typical Output Characteristics<br>100<br>10 Py<br>T = 25°CJ<br>Ee T = 150J ° C<br> V = 25VDS<br>1 Zann 20µs PULSE WIDTH<br>3.0 4.0 5.0 6.0 7.0<br>V , Gate-to-Source Voltage (V)GS<br>D<br>I , Drain-to-Source Current (A)<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 3** Typical Transfer Characteristics **==> picture [230 x 580] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br> VGS<br> TOP 15V<br> 10V<br> 7.0V<br> 5.5V<br> 4.5V<br> 4.0V<br> 3.5V<br> BOTTOM 3.0V<br>10<br>bg<br> 3.0V<br> 20µs PULSE WIDTH<br>1 iF T = 150°CJ<br>0.1 1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>Fig. 2 Typical Output Characteristics<br>2.0<br> I = 2.0AD<br>1.5<br>ATT er<br>1.0<br>rT<br>0.5<br>ATEEET V = 10V GS<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Junction Temperature (°C)J<br>D<br>I , Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br> **Fig. 4** Normalized On-Resistance vs. Temperature 3 2015-10-29 AUIRLL014N **==> picture [226 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>V = 0V, f = 1MHzGSGS<br>C = C + C , C SHORTEDiss gs gd dsiss gs gd ds<br>C = C rss gdoss ds gd<br>C = C + Coss ds gdrss gdoss ds gd<br>300 O C ississ s<br>200 eee eal<br>C ossoss<br>100 Ca<br>C rssrss<br>:<br>0<br>1 10 100<br>Seat esestl<br>V , Drain-to-Source Voltage (V)DSDS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [535 x 640] intentionally omitted <==** **----- Start of picture text -----**<br> 400 20<br>V = 0V, f = 1MHzGSGS I = 2.0AD<br>C = C + C , C SHORTEDiss gs gd dsiss gs gd ds V = 44VDS<br>C = C C = C + Coss ds gdrss gdoss ds gd 16 V = 28V DS<br>300 O C ississ s TE<br>12<br>200 eee eal ERED<br>C ossoss<br>8<br>100 Ca ae aan<br>C rssrss 4<br>: (lA<br> FOR TEST CIRCUIT<br> SEE FIGURE 9<br>0 A 0<br>1 10 100 0 3 6 9 12 15<br>Seat esestl pri| |<br>V , Drain-to-Source Voltage (V)DSDS Q , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.<br> Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br> OPERATION IN THIS AREA LIMITED<br> BY R DS(on)<br>10 10 10µs<br>T = 150°C J 100µs<br>T = 25°CJ<br>1ms<br>1 1<br>10ms<br> T = 25°CA<br> T = 150°CJ<br>0.1 AAI) V = 0V GS A 0.1 LL Single Pulse<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100<br>V , Source-to-Drain Voltage (V)SD V , Drain-to-Source Voltage (V)DS<br>Fig. 7 Typical Source-to-Drain Diode<br>Fig 8. Maximum Safe Operating Area<br>GS<br>V , Gate-to-Source Voltage (V)<br>I , Drain Current (A)D<br>I , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode Forward Voltage 4 2015-10-29 ~~=°°.”~~ @ ~~|~~ AUIRLL014N ~~|~~ ## ~~Cinfineon~~ **==> picture [167 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds<br>Vgs<br>|<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 9a.** Basic Gate Charge Waveform **Fig 10a.** Switching Time Test Circuit **Fig 9b.** Gate Charge Test Circuit **Fig 10b.** Switching Time Waveforms **==> picture [478 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>D = 0.50<br>$<} oe<br>0.20<br>re<br>0.10<br>10<br>=a==<br>0.05<br>PDM<br>0.02<br>0.01 t1<br>1 t2<br>Notes:<br> SINGLE PULSE 1. Duty factor D = t / t 1 2<br>(THERMAL RESPONSE)<br>0.1 2. Peak T = P x Z + T J DM thJA A A<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t , Rectangular Pulse Duration (sec)1<br>thJA<br>Thermal Response (Z )<br>**----- End of picture text -----**<br> **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 2015-10-29 5 AUIRLL014N **==> picture [191 x 115] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>a tp 0.01<br>**----- End of picture text -----**<br> **Fig 12a.** Unclamped Inductive Test Circuit **==> picture [224 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br> ID<br>TOP 1.8A<br> 3.2A<br>BOTTOM 4.0A<br>60 KELL<br>40 NEL<br>20<br>SSE V = 25VDD<br>0<br>25 50 75 100 125 150<br>Starting T , Junction Temperature (°C)J<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Fig 12c.** Maximum Avalanche Energy Vs. Drain Current **==> picture [124 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br>tp<br>**----- End of picture text -----**<br> **==> picture [20 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> IAS<br>**----- End of picture text -----**<br> **Fig 12b.** Unclamped Inductive Waveforms 6 2015-10-29 Cinfir AUIRLL014N **Fig 13.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 2015-10-29 7 AUIRLL014N ~~|... ]~~ **SOT-223 (TO-261AA) Package Outline** (Dimensions are shown in millimeters (inches) ## ~~Cinfineon~~ ## **SOT-223(TO-261AA) Part Marking Information** Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-29 ~~Cinfineon~~ AUIRLL014N ~~|... ]~~ **SOT-223(TO-261AA) Tape and Reel** (Dimensions are shown in millimeters (inches) **==> picture [412 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 4.10 (.161)<br>0.35 (.013)<br>3.90 (.154) 1.85 (.072)<br>0.25 (.010)<br>2.05 (.080) 1.65 (.065)<br>TR 1.95 (.077)<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>1.60 (.062)<br>1.50 (.059)<br> TYP.<br>FEED DIRECTION<br>7.10 (.279) 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>12.10 (.475)<br>11.90 (.469)<br>**----- End of picture text -----**<br> NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. **==> picture [391 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 13.20 (.519) 15.40 (.607)<br>12.80 (.504) 11.90 (.469)<br>4<br>330.00 50.00 (1.969)<br>(13.000) MIN.<br> MAX.<br>NOTES : 18.40 (.724)<br> MAX.<br>1. OUTLINE COMFORMS TO EIA-418-1.<br>2. CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) 4<br>3. DIMENSION MEASURED @ HUB. 12.40 (.488)<br>3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-29 |<br>AUIRLL014N<br>~~Cinfineon~~<br>~~|... ]~~|<br>AUIRLL014N<br>~~Cinfineon~~<br>~~|... ]~~| |---|---| |**Qualification Information**|| |**Qualification Level**<br>Automotive<br>(per AEC-Q101)<br>Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.<br>**Moisture Sensitivity Level**<br>SOT-223<br>MSL1<br>**ESD**<br>Machine Model<br>Class M1A (+/- 50V)† <br>AEC-Q101-002<br>Human Body Model<br>Class H0 (+/- 250V)†<br>AEC-Q101-001<br>Charged Device Model<br>Class C5 (+/- 1125V)† <br>AEC-Q101-005<br>**RoHS Compliant**<br>Yes<br>~~———~~|Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher| |† Highest passing voltage.|| |**Revision History**|| |**Date**<br>**Comments**|| |<br>Added "Logic Level Gate Drive" bullet in the features section on page 1|| |3/25/2014<br><br>Updated part marking on page 8|| |<br>Updated data sheet with new IR corporate template|| |10/29/2015<br><br>Updated datasheet with corporate template|| |<br>Corrected orderingtable onpage 1.|| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2015-10-29
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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