AUIRGSL30B60K
IGBT, 78 A, 1.95 V, 370 W, 600 V, TO-262, 3 Pins
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:78A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:370W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-262; No. of Pins:3Pi
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 370W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-262
- Operating Temperature Max: 175°C
- Continuous Collector Current: 78A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 1.88 € |
| Current stock | 10+ |
| Lead time | 30 days |
PD - 96334
## **AUTOMOTIVE GRADE**
## AUIRGS30B60K AUIRGSL30B60K
## INSULATED GATE BIPOLAR TRANSISTOR
## **Features**
- Low V CE(on) Non Punch Through IGBT Technology
- 10µs Short Circuit Capability
- Square RBSOA
- Positive VCE(on) Temperature Coefficient
- Maximum Junction Temperature rated at 175°C
- Lead-Free, RoHS Compliant
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C VCES = 600V<br>IC = 50A, TC=100°C<br>at TJ=175°C<br>G<br>tsc > 10µs, TJ=150°C<br>E<br>n-channel VCE(on) typ. = 1.95V<br>**----- End of picture text -----**<br>
- Automotive Qualified *
## **Benefits**
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI
- Excellent Current Sharing in Parallel Operation
## **Absolute Maximum Ratings**
|||D2Pak<br>TO-262||
|---|---|---|---|
|||AUIRGS30B60K<br>AUIRGSL30B60K||
|**G**<br>**C**<br>**E**<br>Gate<br>Collector<br>Emitter<br>~~[-—_}___|___~~||||
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified
||measured under board mounted and still air conditions. Ambient temperature (TA) is 25<br>specified|measured under board mounted and still air conditions. Ambient temperature (TA) is 25A) is 25) is 25 C, unless otherwise|
|---|---|---|
|||**Parameter**<br>**Max.**<br>**Units**|
||VCES<br>IC@ TC =25°C<br>IC@ TC =100°C<br>ICM<br>ILM<br>VISOL<br>VGE|Collector-to-Emitter Voltage<br>600<br>V<br>Continuous Collector Current<br>78<br>ContinuousCollectorCurrent<br>50<br>A<br>Pulse Collector Current (Ref.Fig.C.T.5)<br>120<br>Clamped Inductive Load current<br>120<br>RMS Isolation Voltage, Terminal to Case, t=1 min.<br>2500<br>V<br>Gate-to-Emitter Voltage<br>±20<br>~~a~~<br>~~De~~<br>~~a~~<br>~~———_——————~~<br>~~sos~~|
||PD@ TC =25°C<br>PD@ TC =100°C <br>TJ<br>TSTG|Maximum Power Dissipation<br>370<br>W<br> Maximum Power Dissipation<br>180<br>Operating Junction and<br>-55 to +175<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10sec.<br>300 (0.063in.(1.6mm)from case)<br>~~SS~~<br>~~ee~~<br>~~ee~~<br>~~a~~|
||**Thermal / Mechanical Characteristics**||
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case- IGBT<br>–––<br>–––<br>0.41*<br>RθCS<br>Case-to-Sink,flat, greased surface<br>–––<br>0.50<br>–––<br>RθJA<br>Junction-to-Ambient(PCB Mount,SteadyState)<br>–––<br>–––<br>40<br>Wt<br>Weight<br>–––<br>1.44<br>–––<br>g<br>°C/W<br>~~——S~~<br>~~———~~<br>~~ee~~<br>~~a~~|||
||* RθJC(end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C|(end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C|
||and is accounted for by the physical wearout of the die attach medium.|and is accounted for by the physical wearout of the die attach medium.|
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10/14/10
## AUIRGS/SL30B60K
|~~es~~|**Parameter**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ. **<br>~~ee~~|**Max. Units**<br>~~ee~~|**Max. Units**|**Max. Units**<br>**Conditions**|**Ref.Fig.**|
|---|---|---|---|---|---|---|---|
|Qg<br>~~es~~|Total Gate Charge(turn-on)<br>~~ee~~|—<br>~~ee~~|102<br>~~ee~~|153<br>~~ee~~|nC|IC= 30A<br>VCC= 400V<br>VGE= 15V|17<br>CT1|
|Qge<br>~~es~~<br>~~a ~~|Gate-to-Emitter Charge(turn-on)<br>~~ee~~<br> ~~eG~~|—<br>~~ee~~<br>~~eG~~|14<br>~~ee~~<br>~~eG~~|21<br>~~ee~~<br>~~eG~~||||
|Qgc<br>~~a~~|Gate-to-Collector Charge(turn-on)|—|44|66||||
|Eon<br>~~a~~<br>~~ee~~|Turn-On SwitchingLoss|—|350|620|I<br>µJ|IC= 30A, VCC= 400V<br>VGE= 15V, RG= 10Ω, L = 200µH<br>TJ= 25°C|CT4|
|Eoff<br>~~ee~~|Turn-Off SwitchingLoss|—|825|955||||
|Etot<br>~~ee~~<br>~~a~~|Total SwitchingLoss<br>~~en~~|—<br>~~en~~|1175<br>~~en~~|1575<br>~~en~~||||
|td(on)<br>~~a ~~<br>~~a~~|Turn-On delaytime<br> ~~en~~|—<br>~~en~~|46<br>~~en~~|60<br>~~en~~|I<br>ns|IC= 30A, VCC= 400V<br>VGE= 15V, RG= 10Ω, L = 200µH<br>TJ= 25°C|CT4|
|tr<br>~~a~~|Rise time|—|28|39||||
|td(off)<br>~~a~~|Turn-Off delaytime|—|185|200||||
|tf<br>~~a ~~|Fall time<br> ~~es~~|—<br>~~es~~|31<br>~~es~~|40<br>~~es~~||||
|Eon<br>~~a~~|Turn-On SwitchingLoss|—|635|1085|µJ|IC= 30A, VCC= 400V<br>VGE= 15V, RG= 10Ω, L = 200µH<br>TJ= 150°C|CT4<br>12,14<br>WF1,WF2|
|Eoff<br>~~a~~|Turn-Off SwitchingLoss|—|1150|1350||||
|Etot<br>~~a~~<br>~~ae~~|Total SwitchingLoss|—|1785|2435||||
|td(on)<br>~~ae~~|Turn-On delaytime|—|46|60|I<br>ns<br>~~OOD~~|IC= 30A, VCC= 400V<br>VGE= 15V, RG= 10Ω, L = 200µH<br>TJ= 150°C<br>~~GO~~|13,15<br>CT4<br>WF1<br>WF2|
|tr<br>~~ae~~<br>~~a ~~|Rise time<br> ~~Gs~~|—<br>~~Gs~~|28<br>~~Gs~~|39<br>~~Gs~~||||
|td(off)<br>~~a~~|Turn-Off delaytime|—|205|235||||
|tf<br>~~a~~<br>~~ae~~|Fall time<br>~~en~~|—<br>~~GO~~|32<br>~~ID~~|42<br>~~OD~~||||
|LE<br>~~a~~<br>~~ae~~|Internal Emitter Inductance<br>~~en~~|—<br>~~GO~~|7.5<br>~~ID~~|—<br>~~OD~~|nH<br>~~OOD~~|Measured 5mm frompackage<br>~~GO~~||
|Cies<br>~~ae~~|Input Capacitance<br>~~en~~|—<br>~~GO~~|1750<br>~~ID~~|—<br>~~OD~~|pF<br>~~OOD~~|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz<br>~~GO~~|16|
|Coes<br>~~ae~~<br>~~a ~~<br>~~ee~~|Output Capacitance<br>~~en ~~<br> ~~Gs~~|—<br> ~~GO ~~<br>~~Gs~~|160<br> ~~ID ~~<br>~~Gs~~|—<br> ~~OD~~<br>~~Gs~~||||
|Cres<br>~~ee~~|Reverse Transfer Capacitance|—|60|—||||
|RBSOA<br>~~ee~~|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 150°C, IC= 120A, Vp = 600V<br>VCC=500V,VGE =+15V to 0V,RG =10Ω|4<br>CT2|
|SCSOA<br>~~ee~~<br>~~PT~~|Short Circuit Safe Operating Area<br>~~PT~~<br>~~ee~~<br>~~rrrrrrrr—“—t~~|10|—|—|µs|TJ= 150°C, Vp = 600V, RG= 10Ω<br>VCC=360V,VGE= +15V to 0V|CT3<br>WF3|
|ISC (Peak)<br>~~PT~~|Peak Short Circuit Collector Current<br>~~PT~~<br>~~ee~~<br>~~rrrrrrrr—“—t~~|—|200|—|A||WF3|
## Notes:
VCC = 80% (VCES), VGE = 20V, L = 28µH, RG = 22 Ω.
This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
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## AUIRGS/SL30B60K
## **Qualification Information[†]**
|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments: This part number(s) passed Automotive<br>qualification. IR’s Industrial and Consumer qualification<br>level is granted by extension of the higher Automotive<br>level.||
|**Moisture Sensitivity Level**||D2PAK<br>TO-262|MSL1†††<br>(per IPC/JEDEC J-STD-020)|
||||N/A|
|**ESD**|Machine Model|Class M4 (400V)<br>AEC-Q101-002||
||Human Body Model|Class H2 (4000V)<br>AEC-Q101-001||
||Charged Device Model|Class C4 (1000V)<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com
- †† Exceptions to AEC-Q101 requirements are noted in the qualification report.
- ††† Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information.
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## AUIRGS/SL30B60K
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80<br>70 PA LLLLLL<br>60<br>C ORNEA<br>50<br>S EeeNGEEE<br>40<br>P T TEEN Te<br>30<br>P PT NE<br>20<br>C ELE AT<br>10<br>p iety y TTY<br>0<br>COE<br>0 20 40 60 80 100 120 140 160 180<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
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1000<br>100<br>Sasse 10 µs n<br>10<br>100 µs<br>1 1ms<br>DC<br>a<br>0.1 ee a<br>1 10 100 1000 10000<br> VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 3** - Forward SOA TC = 25°C; TJ ≤ 150°C
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400<br>350<br>N CEE<br>300<br>C ONE<br>250<br>C OOL<br>200<br>T TI NLT<br>150<br>S cene<br>100<br>50 S aaeeeNe<br>N S<br>0<br>0 20 40 60 80 100 120 140 160 180<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 2** - Power Dissipation vs. Case Temperature
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1000<br>100 EP<br>10<br>1 e ee eeel<br>10 100 1000<br>VCE (V)<br>IC A)<br>**----- End of picture text -----**<br>
**Fig. 4** - Reverse Bias SOA TJ = 150°C; VGE =15V
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## AUIRGS/SL30B60K
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60 60<br>VGE = 18V VGE = 18V<br>50 VGE = 15V 50 VGE = 15V<br>Wa IZ<br>VGE = 12V VGE = 12V<br>40 VGE = 10V 40 VGE = 10V<br>VGE = 8.0V VGE = 8.0V<br>30 30<br>20 20<br>S| ) b P p e<br>10 10<br>a nne a e<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br> VCE (V) VCE (V)<br>ICE (A) ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs
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60<br>VGE = 18V<br>50 VGE = 15V<br>iz<br>VGE = 12V<br>40 VGE = 10V<br>VGE = 8.0V<br>30<br>20<br>a<br>10<br>p F)<br>0<br>0 1 2 3 4 5<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 7** - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs
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## AUIRGS/SL30B60K
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20<br>18 r e<br>16 | tty,<br>14<br>12 H + ICE = 15A<br>10 ICE = 30A<br>|<br>8 ICE = 60A<br>T ES<br>6 C HAS<br>4<br>ee<br>2<br>0 ee ee<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
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20<br>18 | ty ft,<br>16 | {tt|CUT<br>14<br>12 t ht ICE = 15A<br>10 | tt ICE = 30A<br>8 tl ICE = 60A<br>m ines<br>6<br>4 iH ESa<br>2<br>0 es<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
**Fig. 8** - Typical VCE vs. VGE TJ = -40°C
**Fig. 9** - Typical VCE vs. VGE TJ = 25°C
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250<br>T = 25°C<br>J<br>200 a TJ = 150°C |VA<br>150 a<br>100<br>50 TJ = 150°CJ = 150°C = 150°C Aan<br>0 YZ TJ = 25°C<br>0 5 10 15 20<br> VGE (V)<br>**----- End of picture text -----**<br>
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20 250<br>18<br>16 |P {Tt{tt CUT 200 a<br>14<br>12 a ICE = 15A 150<br>10 | [t] [t] tl ICE = 30A<br>8 ICE = 60A 100<br>6 Hee<br>4 Hi EEee| 50 TJ = 150°CJ = 150°C = 150°C<br>20 E e 0<br>5 10 15 20 0<br> VGE (V)<br>VCE (V) ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 10** - Typical VCE vs. VGE TJ = 150°C
**Fig. 11** - Typ. Transfer Characteristics VCE = 50V; tp = 10µs
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## AUIRGS/SL30B60K
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3000 1000<br>2500 T y. |p ] U F<br>tdOFF<br>2000 n/a<br>EOFF<br>1500 es 74 ee 100 ee<br>1000 v/a EON tdON<br>tF<br>500<br>eee tR<br>a<br>0<br>10<br>0 20 40 60 80<br>0 20 40 60 80<br> IC (A)<br>IC (A)<br>Fig. 12 - Typ. Energy Loss vs. IC Fig. 13 - Typ. Switching Time vs. IC<br>TJ = 150°C; L=200µH; VCE= 400V, TJ = 150°C; L=200µH; VCE= 400V<br>RG= 10 Ω ; VGE= 15V RG= 10 Ω ; VGE= 15V<br>3000 a 10000<br>2500<br>2000 e e e 1000 eee<br>EOFF tdOFF<br>1500 EON<br>aW A e ee a<br>1000 100<br>tdON<br>tF<br>500 Z e e ee<br>tR<br>e e =<br>0 10<br>0 25 50 75 100 125 0 25 50 75 100 125<br>RG ( Ω ) RG ( Ω )<br>Swiching Time (ns)<br>Swiching Time (ns)<br>Energy (µJ)<br>Energy (µJ)<br>**----- End of picture text -----**<br>
**Fig. 14** - Typ. Energy Loss vs. RG TJ = 150°C; L=200µH; VCE= 400V ICE= 30A; VGE= 15V
**Fig. 15** - Typ. Switching Time vs. RG TJ = 150°C; L=200µH; VCE= 400V ICE= 30A; VGE= 15V
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## AUIRGS/SL30B60K
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10000 16<br>— ———— 14 a a<br>Cies 200V<br>12<br>400V<br>1000<br>a e a 10 f F | | fH | |<br>DAN ee es es 8 7<br>Coes 6<br>100 SEe f f i | [| f<br>4<br>a a es es ee<br>Cres 2<br>ee 0 Y | | | [| |<br>10<br>0 25 50 75 100 125<br>0 20 40 60 80 100<br>Q G, Total Gate Charge (nC)<br>VCE (V)<br>Fig. 16 - Typ. Capacitance vs. VCE Fig. 17 - Typical Gate Charge vs. VGE<br> VGE= 0V; f = 1MHz ICE = 30A; L = 600µH<br>10<br>a ee ee ee ee ee ee ee<br>1 P EI<br>D = 0.50<br>0.1 erg 0.20 A — oy ||<br>0.10 R1 R1 R2 R2 Ri (°C/W) τ i (sec)<br>0.05 τ J τ J τ C τ 0.200 0.000428<br>0.01 0.020.01 τ 1 τ 1 τ 2 τ 2 0.209 0.013031<br>S t e S Ci= T τ i / Ri 7 ——<br>Ci i / Ri<br>0.001 P ee rh Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>( THERMAL RESPONSE )<br>0.0001 lll ee ee el<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Capacitance (pF)<br>VGE (V)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig 18.** Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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## AUIRGS/SL30B60K
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L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>
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L<br>80 V + DUT<br>- 480V<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.2** - RBSOA Circuit
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diode clamp /<br>DUT<br>Driver L<br>r<br>- 5V<br>DC 360V<br>DRIVERDUT / | VCC<br>DUT Rg<br>a<br>**----- End of picture text -----**<br>
**Fig.C.T.3** - S.C.SOA Circuit
**Fig.C.T.4** - Switching Loss Circuit
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VCC<br>R =<br>ICM<br>DUT VCC<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.5** - Resistive Load Circuit
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## AUIRGS/SL30B60K
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700 35<br>60 0 30<br>Si,<br>90% ICE<br>500 y tf e 25<br>400 i 20<br> |p<br>300 15<br>||<br>5% V CE<br>200 10<br>5% ICE<br>100 5<br>0 4 0<br>Coes<br>Eoff Loss<br>-100 -5<br>-0.20 0.00 0.20 0.40 0.60 0.80<br>Time(µs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
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700 70<br>600 60<br>fe<br>500 50<br>af<br>TEST CURRENT<br>400 \ 40<br>on eee<br>300 30<br>py<br>90% test current<br>200 20<br>tr 10% test current<br>5% VCE<br>100 10<br>0 0<br>ns [a] Eon Loss aa [e]<br>-100 -10<br>15.90 16.00 16.10 16.20 16.30<br>Time (µs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4
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600 300<br>500 ee 250<br>400 ICE 200<br>VCE<br>300 <a 150<br>200 fo 100<br>100 ieee 50<br>0 0<br>| oo k<br>-5.00 0.00 5.00 10.00 15.00<br>time (µS)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
Fig. WF3- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3
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## AUIRGS/SL30B60K
## TO-262 Package Outline
Dimensions are shown in millimeters (inches)
## TO-262 Part Marking Information
**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/**
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## AUIRGS/SL30B60K
**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/**
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## AUIRGS/SL30B60K
Dimensions are shown in millimeters (inches)
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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>il |<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>JN Tie £4<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>pe 16.10 (.634) It 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>**----- End of picture text -----**<br>
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13.50 (.532) 27.40 (1.079)<br>; 12.80 (.504) 23.90 (.941) 1<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>| OO |<br>NOTES : OO lL 30.40 (1.197) MAX.<br>1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) It 4<br>3. DIMENSION MEASURED @ HUB.<br>3<br>q 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>
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## AUIRGS/SL30B60K
## **Ordering Information**
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRGSL30B60K|TO-262|Tube|**Quantity**<br>50|AUIRGSL30B60K|
|AUIRGS30B60K|D2Pak|Tube|50|AUIRGS30B60K|
|||Tape and Reel Left|800|AUIRGS30B60KTRL|
|||Tape and Reel Right|800|AUIRGS30B60KTRR|
www.irf.com
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## AUIRGS/SL30B60K
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
## **WORLD HEADQUARTERS:**
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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