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AUIRGP4066D1
IGBT, 140 A, 1.7 V, 454 W, 600 V, TO-247AC, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 454W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 175°C
- Continuous Collector Current: 140A
- Collector Emitter Voltage Max: 600V
- Automotive Qualification Standard: AEC-Q101
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 6.46 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## o)
## _**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**_
## **Features**
- Low VCE (ON) Trench IGBT Technology
- Low switching losses
- Maximum Junction temperature 175 °C
- 5 μS short circuit SOA
- Square RBSOA
- 100% of the parts tested for 4X rated current (ILM)
- Positive VCE (ON) Temperature Coefficient
- Soft Recovery Co-Pak Diode
- Tight parameter distribution
- Lead-Free, RoHS Compliant
- Automotive Qualified *
## **Benefits**
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C VCES = 600V<br>I = 75A<br>C(Nominal)<br>G<br>tSC ≥ 5μs, TJ(max) = 175°C<br>E<br>n-channel VCE(on) typ. = 1.70V<br>a<br>C C<br>E<br>C E<br>G<br>G [C]<br>**----- End of picture text -----**<br>
- High Efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation
TO-247AC TO-247AD AUIRGP4066D1 AUIRGP4066D1-E
|**G**|**C**|**E**|
|---|---|---|
|Gate|Collector|Emitter|
- Low EMI
## **Ordering Information**
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRGP4066D1|TO-247AC|Tube|**Quantity**<br>25|AUIRGP4066D1|
|AUIRGP4066D1-E|TO-247AD|Tube|25|AUIRGP4066D1-E|
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted nd still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified.
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VCES<br>~~sf~~|Collector-to-Emitter Voltage<br>~~sf~~|600<br>~~sf~~|V<br>~~sf~~|
|IC@ TC= 25°C<br>~~OO~~|Continuous Collector Current<br>~~OO~~|140<br>~~OO~~|A|
|IC@ TC= 100°C<br>~~nO~~<br>~~a~~|Continuous Collector Current<br>~~nO~~<br>|90<br>~~nO~~<br>||
|INOMINAL<br>~~a~~|Nominal Current<br>|75<br>||
|ICM<br>~~asO~~<br>~~es~~|Pulse Collector Current VGE= 15V<br>~~sO~~|225<br>~~sO~~||
|ILM<br>~~es~~|Clamped Inductive Load Current VGE= 20V|300||
|IF NOMINAL<br>~~es~~|Diode Nominal Curren|75||
|IFM<br>~~EE~~|Diode Maximum Forward Current<br>~~EE~~|300||
|VGE<br>~~EE~~<br>~~SSS~~|Continuous Gate-to-Emitter Voltage<br>~~EE~~<br>~~a~~|±20<br>~~a~~|V<br>~~a~~|
||Transient Gate-to-Emitter Voltage<br>~~EE~~<br>~~a~~<br>~~SSS~~|±30<br>~~a~~<br>~~PO~~<br>~~SSS~~||
|PD@ TC= 25°C<br>~~SSS~~|Maximum Power Dissipation<br>~~SSS~~|454<br>~~SSS~~|W|
|PD@ TC= 100°C<br>~~SSS~~<br>~~**e**s~~|Maximum Power Dissipation<br>~~SSS~~<br>~~e~~|227<br>~~SSS~~<br>~~ee~~||
|TJ<br>TSTG<br>~~SSS~~<br>~~**e**s~~|Operating Junction and<br>Storage Temperature Range<br>~~SSS~~<br>~~e~~|-55 to +175<br>~~SSS~~<br>~~ee~~|°C|
|~~**e**s ~~|Soldering Temperature, for 10 sec.<br> ~~e~~|300 (0.063 in. (1.6mm) from case)<br>~~ee~~||
|<br>~~a~~|Mounting Torque, 6-32 or M3 Screw<br> ~~e~~<br>|10 lbf·in (1.1 N·m)<br>~~ee~~<br>||
***** Qualification standards can be found at http://www.irf.com/
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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units **|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-to-Emitter Breakdown Voltage|600|—|—|V|VGE= 0V,IC= 200μA�|
|ΔV(B R)CES/ΔT J|<br>T emperature Coeff. of Breakdown Voltage|—|0.30|—|V/°C|VGE= 0V,IC= 15mA(25°C-175°C)|
|VCE(on)|<br>Collector-to-Emitter Saturation Voltage|—|1.70|2.1|V|IC= 75A,VGE= 15V,TJ= 25°C�|
|||—|2.0|—||IC= 75A,VGE= 15V,TJ= 150°C�|
|||—|2.1|—||IC= 75A,VGE= 15V,TJ= 175°C�|
|VGE(th)|Gate Threshold Voltage|4.0|—|6.5|V|VCE= VGE,IC= 2.1mA|
|ΔVGE(th)/ΔT J|Threshold Voltage temp. coefficient|—|-13|—|mV/°C|VCE= VGE,IC= 20mA(25°C - 175°C)|
|gfe|Forward Transconductance|—|50|—|S|VCE= 50V,IC= 75A,PW = 25μs|
|ICES|Collector-to-Emitter Leakage Current|—|3.0|200|μA|VGE= 0V,VCE= 600V|
|||—|10|—|mA|VGE= 0V,VCE= 600V,TJ= 175°C|
|VFM|Diode Forward Voltage Drop|—|1.60|1.77|V|IF= 75A|
|||—|1.54|—||IF= 75A,TJ= 175°C|
|IGES|Gate-to-Emitter Leakage Current|—|—|±100|nA|VGE= ±20V|
## **Switching Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge(turn-on)|—|150|225|nC|IC= 75A<br>VGE= 15V<br>VCC= 400V|
|Qge|Gate-to-Emitter Charge(turn-on)|—|40|60|||
|Qgc|Gate-to-Collector Charge(turn-on)|—|60|90|||
|Eon|Turn-On SwitchingLoss|—|4240|5190|μJ|IC= 75A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 100μH, TJ= 25°C<br>Energylossesincludetail& diodereverserecovery|
|Eoff|Turn-Off SwitchingLoss|—|2170|3060|||
|Etotal|Total SwitchingLoss|—|6410|8250|||
|td(on)|Turn-On delaytime|—|50|70|<br>ns|IC= 75A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 100μH<br>TJ = 25°C|
|tr|Rise time|—|80|100|||
|td(off)|Turn-Off delaytime|—|200|230|||
|tf|Fall time|—|60|80|||
|Eon|Turn-On SwitchingLoss|—|6210|—|<br>μJ|IC= 75A, VCC= 400V, VGE=15V<br>RG=10Ω, L=100μH, TJ= 175°C<br>Energy losses include tail & diode reverse recovery|
|Eoff|Turn-Off SwitchingLoss|—|2815|—|||
|Etotal|Total SwitchingLoss|—|9025|—|||
|td(on)|Turn-On delaytime|—|45|—|<br>ns|IC= 75A, VCC= 400V, VGE=15V<br>RG=10Ω, L=100μH<br>TJ= 175°C|
|tr|Rise time|—|70|—|||
|td(off)|Turn-Off delaytime|—|240|—|||
|tf|Fall time|—|80|—|||
|Cies|Input Capacitance|—|4470|—|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz|
|Coes|Output Capacitance|—|350|—|||
|Cres|Reverse Transfer Capacitance|—|140|—|||
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 175°C, IC= 300A<br>VCC= 480V, Vp�600V<br>Rg= 10Ω,VGE= +20V to 0V|
|SCSOA|Short Circuit Safe Operating Area|5|—|—|μs|VCC= 400V, Vp�600V<br>Rg= 10Ω,VGE= +15V to 0V|
|Erec|Reverse RecoveryEnergyof the Diode|—|680|—|μJ|TJ= 175°C<br>VCC= 400V, IF= 75A<br>VGE= 15V,Rg= 10Ω,L =100μH|
|trr|Diode Reverse RecoveryTime|—|240|—|ns||
|Irr|Peak Reverse RecoveryCurrent|—|50|—|A||
## **Notes:**
- VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 50 Ω , tested in production ILM ≤ 400A.
- Pulse width limited by max. junction temperature.
- Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
- R θ is measured at TJ of approximately 90°C.
- Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 120A. Package diode current limit is120A. Note that current limitations arising from heating of the device leads may occur.
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150<br>125 ret | | |<br>100<br>CN<br>75<br>PINE<br>50 |PN<br>25 |NS<br>0 Pty} TN<br>25 50 75 100 125 150 175<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
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1000<br>100 10μsec<br>100μsec<br>1msec<br>10<br>DC<br>1<br>Tc = 25°C corer eee) remenans Deus<br>Tj = 175°C<br>Single Pulse<br>0.1 HE<br>1 10 100 1000<br>VCE (V)<br>Fig. 3 - Forward SOA<br>TC = 25°C, TJ ≤ 175°C; VGE =15V<br>300<br>250 eT A |<br>VGE = 18V<br>200 alam V GE = 15V<br>VGE = 12V<br>150 TS VGE = 10V<br>VGE = 8.0V<br>100<br>A<br>50 A4nm<br>0 PAA ff]<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤ 60μs
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500<br>400<br>300<br>200<br>100<br>0<br>25 50 75 100 125 150 175<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 2** - Power Dissipation vs. Case Temperature
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1000<br>100<br>10<br>ee<br>maiiiamaaiiii<br>1<br>10 100 1000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 4** - Reverse Bias SOA TJ = 175°C; VGE =20V
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300<br>250<br>[ff<br>200 [ [ V GE = 18V<br>VGE = 15V<br>150 AS VGE = 12V<br>VGE = 10V<br>VGE = 8.0V<br>100<br>ASS<br>50<br>Le<br>0 warenpA+<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤ 60μs
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300 300<br>VGE = 18V -40°C<br>250 V GE = 15V 250 25 ° C<br>175°C<br>VGE = 12V<br>200 VGE = 10V CA |_| 200 tif<br>VGE = 8.0V<br>150 150<br>= n/a<br>100 PIPKX | 100 | ff<br>50 50<br>52am fo<br>0 ALL 0 _ ZA | |<br>0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0<br> VF (V)<br> VCE (V)<br>Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics<br>TJ = 175°C; tp = ≤ 60μs tp = ≤ 60μs<br>2018 ee ee ee 2018 ee<br>a ee<br>16 16<br>14 ae eeee ee 14 aFTEee<br>12 I CE = 38A 12 ICE = 38A<br>10 PLL ICE = 75A 10 | I CE = 75A<br>8 aE I CE = 150A 8 tl ICE = 150A<br>64 PFnia 64 |eeHk<br>2 aTy 2 FP ltr |<br>a ae ae e<br>0 'Z 0 Z<br>5 10 15 20 5 10 15 20<br> VGE (V) VGE (V)<br>Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE<br>TJ = -40°C TJ = 25°C<br>20 300<br>18<br>250<br>16 ee aan TJ = 25°C An<br>14 TJ = 175°C<br>200<br>12<br>10 py ICE = 38A 150 any Ane<br>te ICE = 75A EEn/eae<br>8 I CE = 150A<br>100<br>a soe 4nn0<br>6<br>4<br>50<br>2 ea fe<br>0 SS > 0 IA| |<br>5 10 15 20 4 6 8 10 12 14 16 18<br> VGE (V) VGE, Gate-to-Emitter Voltage (V)<br>Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics<br>TJ = 175°C VCE = 50V; tp = ≤ 60μs<br>IC, Collector-to-Emitter Current (A)<br>ICE (A) IF (A)<br>VCE (V) VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
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18000 1000<br>16000<br>14000 td OFF ee eee<br>12000<br>10000 Of) EON ee tF<br>100<br>8000<br>6000 fA See t R<br>td ON<br>4000 EOFF<br>2000 O aAA pTAaesP|<br>0 10 ee<br>0 25 50 75 100 125 150 0 50 100 150<br>IC (A)<br>IC (A)<br>Fig. 13 - Typ. Energy Loss vs. ICC Fig. 14 - Typ. Switching Time vs. ICC<br> = 175°C; L = 100μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE = 15VGE = 15V= 15V TJ = 175°C; L = 100μH; VCE = 400V, RG = 10J = 175°C; L = 100μH; VCE = 400V, RG = 10 = 175°C; L = 100μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE GE = 15V<br>15000 10000<br>13000<br>11000 TTA 1000 «AEE td OFF<br>a pf |<br>9000 EON<br>7000<br>tF<br>100<br>5000 tR<br>EOFF<br>tdON<br>3000 Pa —<br>1000 a 10 ee<br>0 25 50 75 100 0 20 40 60 80 100 120<br>RG ( Ω )<br>Rg ( Ω )<br>Fig. 15 - Typ. Energy Loss vs. RGG Fig. 16 - Typ. Switching Time vs. RGG<br> = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 15VCE = 400V, ICE = 75A; VGE = 15V= 400V, ICE = 75A; VGE = 15VCE = 75A; VGE = 15V= 75A; VGE = 15VGE = 15V= 15V TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE J = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE CE = 400V, ICE = 75A; VGE = 400V, ICE = 75A; VGE CE = 75A; VGE = 75A; VGE GE = 15V<br>60 55<br>55 R G = 10 Ω<br>50<br>50 )} fe R G = 22Ω e Rae<br>45<br>45 ae BNE<br>RG = 47 Ω<br>40 40<br>35 R G = 100 Ω<br>35<br>30<br>CA}ee | 30 E SSEs<br>400<br>25<br>PPP ry Pt<br>20 25<br>tT | ft<br>20 40 60 80 100 120 140 160 0 20 40 60 80 100<br>IF (A) RG ( Ω)<br>Energy (μJ)<br>Energy (μJ)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>IRR (A) IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 13** - Typ. Energy Loss vs. ICC TJ = 175°C; L = 100μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE = 15VGE = 15V= 15V
**Fig. 14** - Typ. Switching Time vs. ICC TJ = 175°C; L = 100μH; VCE = 400V, RG = 10J = 175°C; L = 100μH; VCE = 400V, RG = 10 = 175°C; L = 100μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE GE = 15V
**Fig. 16** - Typ. Switching Time vs. RGG TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE J = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE CE = 400V, ICE = 75A; VGE = 400V, ICE = 75A; VGE CE = 75A; VGE = 75A; VGE GE = 15V
**Fig. 15** - Typ. Energy Loss vs. RGG TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 15VCE = 400V, ICE = 75A; VGE = 15V= 400V, ICE = 75A; VGE = 15VCE = 75A; VGE = 15V= 75A; VGE = 15VGE = 15V= 15V
**Fig. 17** - Typ. Diode IRR vs. IF TJ = 175°C
**Fig. 18** - Typ. Diode IRR vs. RG TJ = 175°C
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55<br>50<br>Tf. le<br>45<br>| Oe<br>40<br>a<br>35 TY) |<br>30 7 TL<br>400 500 600 700<br>diF /dt (A/μs)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 19** - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C
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3500<br>RG = 10Ω<br>3000 RG = 22Ω<br>RG = 47 Ω ‘ym<br>2500 RG = 100 Ω<br>BA<br>2000<br>fag 7 |<br>1500<br>faz<br>1000<br>500 VA7 | || |<br>25 75 125 175<br>IF (A)<br>Fig. 21 - Typ. Diode ERR vs. IF<br>TJ = 175°C<br>10000<br>Cies<br>=—===<br>1000<br>jt<br>Coes<br>100 MS EE<br>Cres<br>eseeee ee<br>10<br>0 100 200 300 400 500<br>VCE (V)<br>Capacitance (pF)<br>Energy (μJ)<br>**----- End of picture text -----**<br>
**Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
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18000<br>16000<br>150A<br>14000 a 47Ω<br>22Ω<br>12000<br>10000 “hy 100Ω 75A<br>8000 10Ω<br>pA<br>6000<br>PAYA<br>38A<br>4000<br>2000 |t+| VE +—<br>200 400 600 800 1000<br>diF /dt (A/μs)<br>Fig. 20 - Typ. Diode QRR vs. diF/dt<br>VCC = 400V; VGE = 15V; TJ = 175°C<br>20 800<br>Tsc<br>15 PLE Lf 600<br>Isc<br>10 LN 400<br>Y<br>5 cen 200<br>0 TTT 0<br>8 10 12 14 16 18<br>VGE (V)<br>QRR (μC)<br>Time (μs) Current (A)<br>**----- End of picture text -----**<br>
**Fig. 22** - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C
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16<br>14 VCES = 400V<br>TT VCES = 300V TOY<br>12<br>10<br>PY<br>8<br>6<br>ZEEE<br>4<br>2<br>Annee<br>0<br>0 20 40 60 80 100 120 140 160<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>
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Fig. 24 - Typical Gate Charge vs. VGE<br> ICE = 75A; L = 485μH<br>**----- End of picture text -----**<br>
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1<br>a<br>D = 0.50<br>0.1 a |||ee Ee<br>aea sem TT ini<br>0.20<br>eR<br>0.01 r——PeEe—eenee| 0.050.010.100.02 0TT2daee6 OSeeeaeee Ai||eeeee τ J τ ee J τ 1 τ i 1 R1 R1 τ 2 τ R22 R2 ee R τ 33 R τ 3 3 τ R4 τ 4R4 4 τ C O τ Ri 00.09441 0.13424 0.002834 . ( 00 °C/W 738 ) 00.000179. τ 000009 i (sec) il|HIi|LH<br>LA 0 SINGLE PULSE ee Ci= i Ci τ i / Rii / Ri i { T 0.09294 0.0182 il<br>0.001 ( THERMAL RESPONSE )<br>ee 0 nn ee ee ee | Notes: | |<br>Ee ee ee ee ee ee ee ee ee ee ee meen<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>EFFEFF<br>0.0001 a<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>a a eh ee ae ee ee ee ee ee ee ee ee ee eee<br>1 aee ee ee<br>D = 0.50<br>SS Se =e tt<br>0.010.1 eeOp| 0.100.05 0.02 0.200.01 eeaoa>|_| τ J τ J τ 1 τ Oe 1 R1R1 τ 2 τ R22R2 R τ 33R τ 33 | τ R4 τ 4R4 4 τ C τ || Ri (0 0.163 0.000390 0.215 0.005990.0°12 C/W) 0 τ .00003 | i (sec)4<br>Ci= τ i / Ri 0.139 0.033585<br>ee | Ci i / Ri oo<br>Notes:<br>0.001 p | er SINGLE PULSE 1. Duty Factor D = t1/t2 Ui tT [LT]<br>2. Peak Tj = P dm x Zthjc + Tc<br>( THERMAL RESPONSE )<br>| | ee (]<br>0.0001 a ee enee<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig. 26.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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L<br>VCC<br>DUT<br>0<br>J:<br>1K<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
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4x<br>DC 360V<br>DUT<br>**----- End of picture text -----**<br>
**Fig.C.T.3** - S.C. SOA Circuit
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VCC<br>R =<br>ICM<br>DUT<br>VCC<br>Rg<br>**----- End of picture text -----**<br>
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L<br>D0<br>><br>80 V<br>DUT<br>480V<br>_ e m Rg T<br>**----- End of picture text -----**<br>
**Fig.C.T.2** - RBSOA Circuit
**==> picture [230 x 393] intentionally omitted <==**
**----- Start of picture text -----**<br>
diode clamp /<br>DU T<br>L<br>- 5V<br>DU T /<br>D RIVER VCC<br>Rg |<br>Fig.C.T.4 - Switching Loss Circuit<br>C force<br>400μH<br>D1 10K<br>C sense<br>G force |= } DUT 0.0075μE sense<br>E force<br>**----- End of picture text -----**<br>
**Fig.C.T.5** - Resistive Load Circuit
**Fig.C.T.6** - BVCES Filter Circuit
**==> picture [222 x 247] intentionally omitted <==**
**----- Start of picture text -----**<br>
700 140<br>—_ tf<br>600 120<br>500 90% I CE 100<br>a<br>400 80<br>\<br>300 60<br>200 40<br>oe oe<br>100 10% I CE 20<br>aren<br>0 0<br>Eoff Loss<br>-100 -20<br>-0.4 -0.2 0 0.2 0.4 0.6<br>time(μs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
**==> picture [222 x 247] intentionally omitted <==**
**----- Start of picture text -----**<br>
700 140<br>tr<br>ry<br>600 120<br>TEST<br> CURRENT<br>500 100<br>un<br>400 80<br>90% ICE<br>300 ip 60<br>200 40<br>oR 10%<br>100 ICE 20<br>ino<br>0 0<br>Eon Loss<br>-100 -20<br>-0.4 -0.2 0 0.2 0.4 0.6<br>time (μs)<br> (V) (A)<br>CE CE<br>V I<br>**----- End of picture text -----**<br>
**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4
**Fig. WF2** - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4
**==> picture [495 x 247] intentionally omitted <==**
**----- Start of picture text -----**<br>
90 700 700<br>80<br>70 PO Q RR 600 a 600<br>60<br>500 500<br>50<br>40 VCE<br>tRR 400 400<br>30<br>20<br>300 300<br>10 ICE<br>0 yp aa<br>200 200<br>-10 ade S| |<br>-20 Peak I RR 100 100<br>-30<br>—— -} 4<br>-40 0 0<br>-50<br>-60 p [SeercMewwrn] pt Vy -100 Be -100<br>-0.20 0.00 0.20 0.40 0.60 0.80 -3 0 3 6 9 12<br>time (μS) Time (uS)<br> (V)<br>F<br>V Vce (V) Ice (A)<br>**----- End of picture text -----**<br>
**Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4
**Fig. WF4** - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3
TO-247AC package is not recommended for Surface Mount Application.
TO-247AD package is not recommended for Surface Mount Application.
## **Qualification Information[†]**
Automotive
(per AEC-Q101)
## **Qualification Level**
Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level.
|**Moisture Sensitivity Level**|**Moisture Sensitivity Level**|TO-247AC|N/A|N/A|
|---|---|---|---|---|
|||TO-247AD|||
||Machine Model||Class M4 (+/-425V)|††|
||||AEC-Q101-002||
|**ESD**|Human Body Model||Class H2 (+/-4000V)<br>AEC-Q101-001|Class H2 (+/-4000V)<br>††|
||Charged Device Model||Class C5 (+/-1125V)|††|
||||AEC-Q101-005||
|**RoHS Compliant**||Yes<br>~~pO~~|||
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage
## **���������������������������**
## **����������������**
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
## **WORLD HEADQUARTERS:**
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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