AUIRGP4063D

IGBT, 100 A, 1.6 V, 330 W, 600 V, TO-247AC, 3 Pins

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Manufacturer: INFINEON
Product type: Single IGBTs
No. of Pins: 3Pins
Power Dissipation: 330W
Transistor Mounting: Through Hole
Transistor Case Style: TO-247AC
Operating Temperature Max: 175°C
Continuous Collector Current: 100A
Collector Emitter Voltage Max: 600V
Automotive Qualification Standard: AEC-Q101
Collector Emitter Saturation Voltage: 1.6V

Delivery and price
Units per pack	1
Price	12.57 €
Current stock	10+
Lead time	30 days

Datasheet

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_**AUTOMOTIVE GRADE**_ 

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## _**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**_ 

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C<br>VCES = 600V<br>IC = 60A, TC = 100°C<br>G tSC 5μs, TJ(max) = 175°C<br>E VCE(on) typ. = 1.6V<br>n-channel<br>**----- End of picture text -----**<br>


## _**Features**_ 

- Low VCE (ON) Trench IGBT Technology 

- Low switching losses 

- Maximum Junction temperature 175 °C 

- 5 μS short circuit SOA 

- Square RBSOA 

- 100% of the parts tested for 4X rated current (ILM) 

- Positive VCE (ON) Temperature co-efficient 

- Ultra fast soft Recovery Co-Pak Diode 

- Tight parameter distribution 

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C C<br>[E]<br>G  [C] G  [C E]<br>TO-247AC TO-247AD<br>AUIRGP4063D AUIRGP4063D-E<br>**----- End of picture text -----**<br>


- Lead Free Package 

## _**Benefits**_ 

- High Efficiency in a wide range of applications 

- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses 

- Rugged transient Performance for increased reliability 

- Excellent Current sharing in parallel operation 

|**_G_**|**_C_**|**_E_**|
|---|---|---|
|Gate|Collector|Emitter|



- Low EMI 

|**_Base part number_**|**_Package Type_**|**_Standard Pack_**|**_Standard Pack_**|**_Orderable Part Number_**|
|---|---|---|---|---|
|||**_Form_**|**_Quantity_**||
|AUIRGP4063D|TO-247|Tube|25|AUIRGP4063D|
|AUIRGP4063D-E|TO-247|Tube|25|AUIRGP4063D-E|



## _**Absolute Maximum Ratings**_ 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

||**_Parameter_**|**_Max._**|**_Units_**|
|---|---|---|---|
|VCES|Collector-to-Emitter Voltage|600|V|
|IC@ TC= 25°C|Continuous Collector Current|100<br>60<br>144<br>192<br>82<br>50<br>192|A|
|IC@ TC= 100°C|Continuous Collector Current|||
|ICM|Pulse Collector Current,VGE= 15V|||
|ILM|Clamped Inductive Load  Current,VGE= 20V�|||
|IF@ TC= 25°C|Diode Continous Forward Current|||
|IF@ TC= 100°C|Diode Continous Forward Current|||
|IFM|Diode Maximum Forward Current�|||
|VGE|Continuous Gate-to-Emitter Voltage|±20<br>±30|V|
||Transient Gate-to-Emitter Voltage|||
|PD@ TC= 25°C|Maximum Power Dissipation|330<br>170|W|
|PD@ TC= 100°C|Maximum Power Dissipation|||
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55 to +175<br>300 (0.063 in. (1.6mm) from case)|°C|
||Soldering Temperature, for 10 sec.|||
||Mounting Torque, 6-32 or M3 Screw|10 lbf·in (1.1 N·m)||



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## _**Thermal Resistance**_ 

|||**_Parameter_**|**_Parameter_**|**_Parameter_**|**_Parameter_**|**_Parameter_**|**_Min._**|**_Typ._**|**_Max._**|**_Units_**|**_Units_**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|RJC(IGBT)||Thermal Resistance Junction-to-Case-(each IGBT)|||||–––|–––|0.45|°C/W||
|RJC(Diode)||Thermal Resistance Junction-to-Case-(each Diode)|||||–––|–––|0.92|||
|RCS||Thermal Resistance,Case-to-Sink(flat, greased surface)|||||–––|0.24|–––|||
|RJA||Thermal Resistance,Junction-to-Ambient(typical socket mount)|||||–––|80|–––|||
|**_Electrical Characteristics @ TJ = 25°C(unless otherwise specified)_**||||||||||||
||**_Parameter_**||**_Min._**|**_Typ._**|**_Max. _**|**_Units _**|**_Conditions_**||||**R ef .F i g**|
|V(BR)CES|Collector-to-E mitter B reakdown Voltage||600|—|—|V|VGE= 0V,IC= 150μA�||||CT 6|
|V(BR)CES/TJ|T emperature Coeff. of B reakdown Voltage||—|0.30|—|V/°C|VGE= 0V,IC= 1mA(25°C-175°C)||||CT 6|
|VCE(on)|Collector-to-Emitter Saturation Voltage||—|1.6|1.9|V|IC= 48A,VGE= 15V,TJ= 25°C||||5,6,7<br>9,10,11|
||||—|1.9|—||IC= 48A,VGE= 15V,TJ= 150°C|||||
||||—|2.0|—||IC= 48A,VGE= 15V,TJ= 175°C|||||
|VGE(th)|Gate Threshold Voltage||4.0|—|6.5|V|VCE= VGE,IC= 1.4mA||||9, 10,<br>11, 12|
|VGE(th)/T J|Threshold Voltage temp. coefficient||—|-21|—|mV/°C|VCE= VGE,IC= 1.0mA(25°C - 175°C)|||||
|gfe|Forward Transconductance||—|32|—|S|VCE= 50V,IC= 48A,PW = 80μs|||||
|ICES|Collector-to-Emitter Leakage Current||—|1.0|150|μA|VGE= 0V,VCE= 600V|||||
||||—|450|1000||VGE= 0V,VCE= 600V,TJ= 175°C|||||
|VFM|Diode Forward Voltage Drop||—|1.95|2.91|V|IF= 48A||||8|
||||—|1.45|—||IF= 48A,TJ= 175°C|||||
|IGES|Gate-to-Emitter Leakage Current||—|—|±100|nA|VGE= ±20V|||||



## _**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**_ 

||**_Parameter_**|**_Min._**|**_Typ._**|**_Max. _**|**_Units_**|**_Conditions_**|**R ef .F i g**|
|---|---|---|---|---|---|---|---|
|Qg|Total Gate Charge(turn-on)|—|95|140|nC|IC= 48A<br>VGE= 15V<br>VCC= 400V|24<br>CT 1|
|Qge|Gate-to-Emitter Charge(turn-on)|—|28|42||||
|Qgc|Gate-to-Collector Charge(turn-on)|—|35|53||||
|Eon|Turn-On SwitchingLoss|—|625|1141|μJ|IC= 48A, VCC= 400V, VGE= 15V<br>RG= 10, L = 200μH, LS= 150nH, TJ= 25°C<br>E nergy los s es  include tail & diode revers e recovery|CT 4|
|Eoff|Turn-Off SwitchingLoss|—|1275|1481||||
|Etotal|Total SwitchingLoss|—|1900|2622||||
|td(on)|Turn-On delaytime|—|60|78|<br>ns|IC= 48A, VCC= 400V, VGE= 15V<br>RG= 10, L = 200μH, LS= 150nH, TJ= 25°C|CT 4|
|tr|Rise time|—|40|56||||
|td(off)|Turn-Off delaytime|—|145|176||||
|tf|Fall time|—|35|46||||
|Eon|Turn-On SwitchingLoss|—|1625|—|<br>μJ|IC= 48A, VCC= 400V, VGE=15V<br>RG=10, L=200μH, LS=150nH, TJ= 175°C�<br>E nergy los s es  include tail & diode revers e recovery|13, 15<br>�CT 4<br>WF1, WF2|
|Eoff|Turn-Off SwitchingLoss|—|1585|—||||
|Etotal|Total SwitchingLoss|—|3210|—||||
|td(on)|Turn-On delaytime|—|55|—|<br>ns|IC= 48A, VCC= 400V, VGE= 15V<br>RG= 10, L = 200μH, LS= 150nH<br>TJ= 175°C|14, 16<br>CT 4<br>WF 1<br>WF2|
|tr|Rise time|—|45|—||||
|td(off)|Turn-Off delaytime|—|165|—||||
|tf|Fall time|—|45|—||||
|Cies|Input Capacitance|—|3025|—|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz|23|
|Coes|Output Capacitance|—|245|—||||
|Cres|Reverse Transfer Capacitance|—|90|—||||
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 175°C, IC= 192A<br>VCC= 480V, Vp =600V<br>Rg= 10,VGE= +15V to 0V|4<br>CT 2|
|SCSOA|Short Circuit Safe Operating Area|5|—|—|μs|VCC= 400V, Vp =600V<br>Rg= 10,VGE= +15V to 0V|22, CT 3<br>WF4|
|Erec|Reverse RecoveryEnergyof the Diode|—|845|—|μJ|TJ= 175°C<br>VCC= 400V, IF= 48A<br>VGE= 15V,Rg= 10,L =200μH,Ls= 150nH|17, 18, 19<br>20, 21<br>WF3|
|trr|Diode Reverse RecoveryTime|—|115|—|ns|||
|Irr|Peak Reverse RecoveryCurrent|—|40|—|A|||



_**Notes:**_ 

- VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10. 

- This is only applied to TO-247AC package. 

- Pulse width limited by max. junction temperature. 

- Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 

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100<br>80 Sa<br>60 CENCE<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br> TC, Case Temperature (°C)<br>Fig. 1  - Maximum DC Collector Current vs.<br>Case Temperature<br>1000<br>100 10μsec<br>100μsec<br>10 ZTE NOT 1msec SE<br>po esp AS DC sd<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>ci Corl<br>0.1<br>1 10 100 1000<br>VCE (V)<br>Fig. 3  - Forward SOA<br>TC = 25°C, TJ 175°C; VGE =15V<br>200<br>180 | | Net TT<br>160 || VGE = 18V<br>VGE = 15V<br>140 || PAR VGE = 12V<br>120 | Ty Je| VGE = 10V<br>VGE = 8.0V<br>a)<br>100<br>80 |) aoeTTT<br>60 |<br>40 |reff|| [7Y {[||<br>20<br>0 [AL t [| [ |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>IC (A)<br>IC, Collector Current (A)<br>**----- End of picture text -----**<br>


_**Fig. 5**_ - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 

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400<br>300<br>200<br>100<br>0<br>25 50 75 100 125 150 175<br> TC (°C)<br>Fig. 2  - Power  Dissipation vs. Case<br>Temperature<br>1000<br>100<br>eeese<br>10 ell<br>ee el<br>1<br>10 100 1000<br>VCE (V)<br>Fig. 4  - Reverse Bias SOA<br>TJ = 175°C; VGE =15V<br>200<br>180 |[7]<br>160<br>[ VGE = 18V JT |<br>140 || (Abe<t VGE = 15V TT<br>s[f7 VGE = 12V<br>120 | |FAN VGE = 10V<br>100 | > VGE = 8.0V<br>80 ia eea,<br>60 eee<br>4020 |e/aff ||/|ee|<br>0 |[yifi ft| [| [{ |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>IC (A)<br>Ptot (W)<br>**----- End of picture text -----**<br>


_**Fig. 6**_ - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs 

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200<br>180 VGE = 18V Lf /| | |<br>VGE = 15V<br>160 VGE = 12V<br>VGE = 10V<br>140<br>VGE = 8.0V<br>120<br>100<br>80 a / eee<br>60 | I~ProN_N | |<br>40<br>| OY | iN<br>200 |\7A| | | | |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


_**Fig. 7**_ - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs 

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200180 7ae<br>160<br>140<br>-40°c<br>120 25°C<br>175°C<br>100<br>80 ai. aa<br>60 ae ae<br>40<br>a2)/<br>20<br>0 |He”|<br>0.0 1.0 2.0 3.0 4.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>


_**Fig. 8**_ - Typ. Diode Forward Characteristics tp = 80μs 

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2018 PFaTE 2018 i<br>1614 a 1614 i<br>12 aia I CE  = 24A 12 | [tt] I CE  = 24A<br>10 CTE ICE = 48A 10 | ICE = 48A<br>8 mes I CE  = 96A 8 |ie I CE  = 96A<br>6 anise 6 |iEol<br>4 a 4 EIE<br>2 en a 2 aae<br>0 i aeee ee 0 PLASeee<br>5 10 15 20 5 10 15 20<br> VGE (V)  VGE (V)<br>Fig. 9  - Typical VCE vs. VGE Fig. 10  - Typical VCE vs. VGE<br>TJ = -40°C TJ = 25°C<br>2018 PF tt yf 200180 PF<br>T  = 25°C<br>J<br>16 Pett 160 T = 175°C ZF<br>J<br>14 a  it 140 po<br>12 Pe I CE  = 24A 120 PF t/<br>10 | tt ICE = 48A 100 a e/a<br>8 | td I CE  = 96A 80 FT CY<br>6 | trib 60 Ae<br>42 aPQ| eiee ee 4020 ai,e/aee (ee Ae<br>0 ee 0 |EOP<br>5 10 15 20 0 5 10 15<br> VGE (V)  VGE (V)<br>VCE (V)<br>VCE (V) VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


_**Fig. 11**_ - Typical VCE vs. VGE TJ = 175°C 

_**Fig. 12**_ - Typ. Transfer Characteristics VCE = 50V; tp = 10μs 

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6000 1000<br>5000<br>pf EOFF Pt<br>4000 ee td OFF ft tf<br>3000 EON 100<br>tdON<br>2000 fe PIE<br>—f ye tF<br>t R<br>1000 Ff a==_=<br>7% |eeore f |<br>0 10<br>0 50 100 150 0 20 40 60 80 100<br>IC (A)<br>IC (A)<br>Fig. 13  - Typ. Energy Loss vs. IC Fig. 14  - Typ. Switching Time vs. ICC<br> = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15VCE = 400V, RG = 10; VGE = 15V= 400V, RG = 10; VGE = 15VG = 10; VGE = 15V= 10; VGE = 15V; VGE = 15V; VGE = 15VGE = 15V= 15V TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE J = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE  = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE CE = 400V, RG = 10; VGE = 400V, RG = 10; VGE G = 10; VGE = 10; VGE ; VGE ; VGE GE = 15V<br>5000 1000<br>4500 TT 77 td OFF oT<br>EOFF<br>4000 ave a<br>EON tR<br>3500<br>Pf AT tdON<br>3000 100<br>2500 | Ld tF<br>2000 Ane e eeT<br>1500 PP | |<br>1000 PTT fT lr 10 e e ee e e ee<br>0 25 50 75 100 125 0 25 50 75 100 125<br>Rg () RG ()<br>Fig. 15  - Typ. Energy Loss vs. RG<br> = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15VCE = 400V, ICE = 48A; VGE = 15V= 400V, ICE = 48A; VGE = 15VCE = 48A; VGE = 15V= 48A; VGE = 15VGE = 15V= 15V Fig. 16  - Typ. Switching Time vs. RGG<br>TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE J = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE  = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE CE = 400V, ICE = 48A; VGE = 400V, ICE = 48A; VGE CE = 48A; VGE = 48A; VGE GE = 15V<br>45 45<br>40 |te|r| hl<br>40<br>RG = 10<br>35 we<br>35<br>30 PF | | tf KL<br>25 | R G =  22 30<br>20 |[| R G =  47 25<br>ee<br>15 es _]) ++ —<br>RG = 100 20<br>a a ee<br>10<br>Ff 15<br>50 Ff ft| fT 10<br>0 20 40 60 80 100 0 25 50 75 100 125<br>IF (A) RG (<br>Swiching Time (ns)<br>IRR (A) IRR (A)<br>Energy (μJ)<br>Swiching Time (ns)<br>Energy (μJ)<br>**----- End of picture text -----**<br>


_**Fig. 14**_ - Typ. Switching Time vs. ICC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE J = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE  = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE CE = 400V, RG = 10; VGE = 400V, RG = 10; VGE G = 10; VGE = 10; VGE ; VGE ; VGE GE = 15V 

TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15VCE = 400V, RG = 10; VGE = 15V= 400V, RG = 10; VGE = 15VG = 10; VGE = 15V= 10; VGE = 15V; VGE = 15V; VGE = 15VGE = 15V= 15V 

_**Fig. 16**_ - Typ. Switching Time vs. RGG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE J = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE  = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE CE = 400V, ICE = 48A; VGE = 400V, ICE = 48A; VGE CE = 48A; VGE = 48A; VGE GE = 15V 

TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15VCE = 400V, ICE = 48A; VGE = 15V= 400V, ICE = 48A; VGE = 15VCE = 48A; VGE = 15V= 48A; VGE = 15VGE = 15V= 15V 

_**Fig. 17**_ - Typ. Diode IRR vs. IF TJ = 175°C 

_**Fig. 18**_ - Typ. Diode IRR vs. RG TJ = 175°C 

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45<br>40<br>Pt ty<br>|<br>35 | [fe<br>|<br>30<br>| | yi<br>2520  |7tYetff<br>A<br>15 [| [ fl<br>{|<br>10 | ft ft<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>IRR (A)<br>**----- End of picture text -----**<br>


_**Fig. 19**_ - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C 

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900<br>800 [fy RG = 10<br>700<br>600 pt R G  = 22<br>500 pet<br>400 R G  = 47<br>eA<br>300<br>200 RG = 100<br>100 I<br>es<br>0<br>0 20 40 60 80 100<br>IF (A)<br>Fig. 21  - Typ. Diode ERR vs. IF<br>TJ = 175°C<br>10000<br>Cies<br>S2a=2<br>—S— os<br>1000<br>Aff |<br>Coes<br>100<br>_ S|<br>Cres<br>——<br>10 es<br>0 20 40 60 80 100<br>VCE (V)<br>Energy (μJ)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


_**Fig. 23**_ - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 

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4000<br>3500<br>96A<br>3000<br>48A 10<br>2500<br>100<br> 22<br> 47<br>2000<br>24A<br>1500<br>1000<br>0 500 1000 1500<br>diF /dt (A/μs)<br>QRR (μC)<br>**----- End of picture text -----**<br>


_**Fig. 20**_ - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 

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18 400<br>16 [| py 350<br>14 300<br>ane<br>12 IVY] | 250<br>10 EAE \/ 200<br>8 150<br>6 100<br>P| [N\) |<br>4 || Ri 50<br>8 10 12 14 16 18<br>VGE (V)<br>Fig. 22  - VGE vs. Short Circuit Time<br>VCC = 400V; TC = 25°C<br>16<br>14 "TT VCES = 300V Wy<br>VCES = 400V<br>12 || Y |<br>10 | Ge<br>8<br>6<br>42 AVe<br>(A<br>0 a<br>0 25 50 75 100<br>Q G, Total Gate Charge (nC)<br>Fig. 24  - Typical Gate Charge vs. VGE<br> ICE = 48A; L = 600μH<br>Time (μs)<br>VGE, Gate-to-Emitter Voltage (V)<br>Current (A)<br>**----- End of picture text -----**<br>


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1<br>a ee eee ee eee ee eee ee eee<br>D = 0.50 poo eT HHT<br>0.1 ee 0.20 aon al |<br>rr 0.10 EE EE<br>0.05<br>—_— 0.02 ee aaa ee eee Lee R1 R1 R2 R2 R3R3 Ri (°C/W) i (sec)<br>0.01 Be: 0.01 ee J J C 0.0872   0.000114 ill<br>eeteeetee ee 11  2 2  3  3 —_ 0.1599   0.001520 1Han|<br>|_| 7 SINGLE PULSE Se ee Ci=  T iRi T i rid 0.2020   0.020330 [1]<br>0.001 wai ( THERMAL RESPONSE ) Py Ci iRi<br>PEE Notes:<br>a ee a ee ee ee ee eee ee mean<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 FEFEAEee<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25.   Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>en,ee ee ee ee ee<br>1 || |<br>D = 0.50<br>|| 0.20 ee ee Me ee<br>0.1 "| 0.10 er<br>0.01 | | 0.050.010.02 BE ee es 0 J  nanan J R1R1 ean R2R2 eee R3R 3 C   0.2774     0.000908 Ri (°C/W) i (sec) Ly<br>creer 11 2 2 33 —  0.3896     0.003869 il<br>i es Ci=  Ci iRi iRi |  0.2540     0.030195 cH<br>0.001 Pat SINGLE PULSE A<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 FeetUa{| TE SEcrTT EEC §S EsBipELL tt THEI<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


_**Fig. 26.**_ Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 

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L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


_**Fig.C.T.1**_ - Gate Charge Circuit (turn-off) 

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**----- Start of picture text -----**<br>
4x<br>DC 360V<br>DUT<br>**----- End of picture text -----**<br>


_**Fig.C.T.3**_ - S.C. SOA Circuit 

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**----- Start of picture text -----**<br>
VCC<br>R =<br>ICM<br>DUT<br>VCC<br>Rg<br>**----- End of picture text -----**<br>


_**Fig.C.T.5**_ - Resistive Load Circuit 

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**----- Start of picture text -----**<br>
L<br>000<br>D><br>80 V<br>DUT<br>480V<br>Rg<br>**----- End of picture text -----**<br>


_**Fig.C.T.2**_ - RBSOA Circuit 

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**----- Start of picture text -----**<br>
diode clamp /<br>DU T<br>L<br>-<br>- 5V<br>DU T /<br>D RIVER VCC<br>Rg |<br>**----- End of picture text -----**<br>


_**Fig.C.T.4**_ - Switching Loss Circuit 

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**----- Start of picture text -----**<br>
C force<br>400μH<br>D1 10K<br>C sense<br>G force DUT 0.0075μ<br>E sense<br>E force<br>**----- End of picture text -----**<br>


_**Fig.C.T.6**_ - BVCES Filter Circuit 

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**----- Start of picture text -----**<br>
700 140<br>600 a 120<br>ff<br>500 100<br>400 80<br>tf<br>300 60<br>90% ICE<br>200 40<br>5% VCE<br>100 20<br>tp 5% ICE<br>0 0<br>an<br>EOFF Loss<br>-100 -20<br>-0.40 0.10 0.60 1.10<br>Time(μs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


_**Fig. WF1**_ - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 

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**----- Start of picture text -----**<br>
60<br>50 Se<br>—<br>40<br>QRR<br>30<br> \eee<br>20 tRR<br>10 ple<br>0<br>-10 10%<br>Peak<br>Peak<br>-20 I RR I RR<br>-30 OV/<br>cE<br>-40<br>-0.15 -0.05 0.05 0.15 0.25<br>time (μS)<br> (A)<br>IRR<br>**----- End of picture text -----**<br>


_**Fig. WF3**_ - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 

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**----- Start of picture text -----**<br>
600 120<br>oe<br>500 100<br>t r<br>400 80<br>TEST<br>300 CURRE 60<br>90% test<br>200 40<br>10% test<br>100 20<br>5% VCE<br>Wy<br>0 0<br>oe.<br>EON<br>-100 -20<br>6.20 6.40 6.60 6.80 7.00<br>Time (μs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


_**Fig. WF2**_ - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 

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**----- Start of picture text -----**<br>
600 600<br>500 500<br>ICE<br>VCE<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>-100 -100<br>-5.00 0.00 5.00 10.00<br>time (μS)<br>Fig. WF4  - Typ. S.C. Waveform<br>@ TJ = 25°C using Fig. CT.3<br> (V)  (A)<br>VCE ICE<br>**----- End of picture text -----**<br>


TO-247AC package is not recommended for Surface Mount Application. 

TO-247AD package is not recommended for Surface Mount Application. 

## _**† Qualification Information**_ 

|Automotive||
|---|---|
|(per AEC-Q101)|†|



|**_Qualification Informationlification Informationcation Informationtion Informationon Informationn Informationormationrmationationtiononn_**<br>**_†_**|**_Qualification Informationlification Informationcation Informationtion Informationon Informationn Informationormationrmationationtiononn_**<br>**_†_**|||
|---|---|---|---|
|**_Qualification Level_**||Automotive<br>(per AEC-Q101)<br>†||
|||Comments: This part number(s) passed Automotive qualification.<br>IR’s Industrial and Consumer qualification level is granted by<br>extension of the higher Automotive level.||
|**_Moisture Sensitivity Level_**||TO-247AC|N/A|
|||TO-247AD|N/A|
|**_ESD_**|Machine Model|Class M4 (±425V)<br>††<br>(per AEC-Q101-002)||
||Human Body Model|Class H2 (±4000V)<br>††<br>(per AEC-Q101-001)||
||Charged Device Model|Class C5 (±1125V)<br>††<br>(per AEC-Q101-005)||
|**_RoHS Compliant_**||Yes||



y[IN] wD ~~Té4R~~ 

~~| AUIRGP4063D/E |~~ 

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July 12, 2013

Updated at February 9, 2023

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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