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AUIRGP4062D
IGBT, 48 A, 1.7 V, 250 W, 600 V, TO-247AC, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:48A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3Pin
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 250W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 175°C
- Continuous Collector Current: 48A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 2.79 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## PD - 97637 AUIRGR4045D AUIRGU4045D
## WITH
## ULTRAFAST SOFT RECOVERY DIODE
## **Features**
- Low VCE (on) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction temperature 175 °C
- 5µs SCSOA
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (on) Temperature Coefficient.
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C<br>VcES =<br>=<br>Ic 6.0A, Te<br>G<br>=<br>VcE(on) typ.<br>E<br>n-channel<br>**----- End of picture text -----**<br>
- Ultra Fast Soft Recovery Co-pak Diode
- Tighter Distribution of Parameters
- Lead-Free, RoHS Compliant
- Automotive Qualified*
## **Benefits**
- High Efficiency in a Wide Range of Applications
- Suitable for a Wide Range of Switching Frequencies due
- to Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation
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G oa<br>D-Pak I-Pak<br>AUIRGR4045D AUIRGU4045D<br>G C E<br>Gate Colletor Emitter<br>**----- End of picture text -----**<br>
- Low EMI
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
||**Parameter**|Max.|**Units**|
|---|---|---|---|
|VCES|Collector-to-Emitter Breakdown Voltage<br>~~eS~~|600<br>~~eS~~|V<br>~~eS~~|
|IC@ TC= 25°C|Continuous Collector Current<br>~~eS~~<br>~~QO~~|12<br>~~eS~~<br>~~QO~~|A<br>~~eS~~|
|IC@ TC= 100°C|Continuous Collector Current<br>~~Qe~~|6.0<br>~~Qe~~||
|ICM|Pulsed Collector Current,VGE= 15V<br>~~GO~~<br>~~©~~|18<br>~~GO~~<br>~~GO~~||
|ILM|Clamped Inductive Load Current,VGE= 20V<br>~~©~~<br>~~a~~|24<br>~~GO~~<br>~~Qe~~||
|IF@TC=25°C|Diode Continuous Forward Current<br>~~© ~~<br>~~a~~|8.0<br> ~~GO~~<br>~~Qe~~||
|IF@TC=100°C<br>~~a~~|Diode Continuous Forward Current<br>~~a~~<br>~~QO~~<br>~~a~~|4.0<br>~~Qe~~<br>~~QO~~||
|IFM<br>~~a~~|Diode Maximum Forward Current<br>~~a~~<br>~~(~~|24<br>~~(~~||
|VGE<br>~~a~~|Continuous Gate-to-Emitter Voltage<br>~~a~~<br>~~(~~|± 20<br>~~(~~|V|
||TransientGate-to-Emitter Voltage|± 30<br>~~pO~~||
|PD@ TC=25°|Maximum Power Dissipation<br>~~a~~|77<br>~~pO~~<br>~~(~~|W|
|PD@ TC=100°|Maximum Power Dissipation<br>~~QO~~|39<br>~~QO~~||
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55 to + 175|°C|
||SolderingTemperature,for 10seconds<br>~~Qe~~|300(0.063 in.(1.6mm)from case)<br>~~Qe~~||
## **Thermal Resistance**
|~~a~~|**Parameter**<br>~~a~~|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RθJC<br>~~a~~<br>~~a~~|Junction-to-Case - IGBT<br>~~a~~<br>~~a~~|–––<br>|–––<br>|1.9<br>|°C/W|
|RθJC<br>~~a~~<br>~~a~~|Junction-to-Case - Diode<br>~~a~~<br>~~a~~|–––<br>|–––<br>|6.8<br>||
|RθJA<br>~~a~~|Junction-to-Ambient(PCB Mount)<br>~~a>~~|–––<br>~~>~~|–––<br>~~>~~|50<br>~~>~~||
|RθJA|Junction-to-Ambient<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|110<br>~~a~~||
***** Qualification standards can be found at http://www.irf.com/
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1
02/14/11
## AUIRGR/U4045D
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|~~se~~|**Parameter**<br>~~se~~|**Min.**<br>~~se~~<br>~~ee~~|**Typ. **<br>~~se~~<br>~~Qn~~|**Max. **<br>~~se~~<br>~~Qn~~|**Units**<br>~~se~~<br>~~Qn~~|**Conditions**<br>~~se~~<br>~~GO~~|**Ref.Fig**<br>~~se~~|
|---|---|---|---|---|---|---|---|
|Qg|Total Gate Charge(turn-on)<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|13<br>~~Qn~~<br>~~ee~~|19.5<br>~~Qn~~<br>~~ee~~|nC<br>~~Qn ~~|IC= 6.0A<br>VCC= 400V<br>VGE= 15V<br> ~~GO~~|24<br>CT1|
|Qge|Gate-to-Emitter Charge(turn-on)<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.1<br>~~ee~~<br>~~ee~~|4.65<br>~~ee~~||||
|Qgc|Gate-to-Collector Charge(turn-on)<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.4<br>~~ee~~<br>~~ee~~|9.6<br>~~ee~~||||
|Eon|Turn-On SwitchingLoss<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|56<br>~~ee~~<br>~~ee~~|86<br>~~ee~~|µJ|IC= 6.0A, VCC= 400V, VGE= 15V<br>RG= 47Ω, L=1mH, LS= 150nH, TJ= 25°C<br>Energylosses include tail and diode reverse recovery|CT4|
|Eoff|Turn-Off SwitchingLoss<br>~~ee~~|—<br>~~ee~~|122<br>~~ee~~|143<br>~~ee~~||||
|Etotal|Total SwitchingLoss<br>~~ee~~|—<br>~~ee~~|178<br>~~ee~~|229<br>~~ee~~||||
|td(on)|Turn-On delaytime<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|27<br>~~ee~~|35<br>~~ee~~|I<br>ns|IC= 6.0A, VCC= 400V<br>RG= 47Ω, L=1mH, LS= 150nH<br>TJ= 25°C|CT4|
|tr|Rise time<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|11<br>~~ee~~|15<br>~~ee~~||||
|td(off)|Turn-Off delaytime<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|75<br>~~ee~~|93<br>~~ee~~||||
|tf|Fall time<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|17<br>~~ee~~|22<br>~~ee~~||||
|Eon|Turn-On SwitchingLoss<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|140<br>~~ee~~|—<br>~~ee~~|I<br>µJ|IC= 6.0A, VCC= 400V, VGE= 15V<br>RG= 47Ω, L=1mH, LS= 150nH, TJ= 175°C<br>Energylosses include tail and diode reverse recovery|13,15<br>CT4<br>WF1,WF2|
|Eoff|Turn-Off SwitchingLoss<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|189<br>~~ee~~<br>~~ee~~|—<br>~~ee~~||||
|Etotal|Total SwitchingLoss<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|329<br>~~ee~~<br>~~ee~~|—<br>~~ee~~||||
|td(on)|Turn-On delaytime<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|26<br>~~ee~~<br>~~ee~~|—<br>~~ee~~|I<br>ns|IC= 6.0A, VCC= 400V<br>RG= 47Ω, L=1mH, LS= 150nH<br>TJ= 175°C|14,16<br>CT4<br>WF1,WF2|
|tr|Rise time<br>~~ee~~|—<br>~~ee~~|12<br>~~ee~~|—<br>~~ee~~||||
|td(off)|Turn-Off delaytime<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|95<br>~~ee~~<br>~~ee~~|—<br>~~ee~~||||
|tf|Fall time<br>~~ee~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|32<br>~~ee~~<br>~~ee~~|—<br>~~ee~~||||
|Cies<br>~~rr~~|Input Capacitance<br>~~ee~~<br>~~es~~<br>~~rr~~|—<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|350<br>~~ee~~<br>~~ee~~<br>~~es~~|—<br>~~ee~~<br>~~es~~|pF|VGE= 0V<br>VCC= 30V<br>f = 1Mhz|23|
|Coes<br>~~rr~~|Output Capacitance<br>~~ee~~<br>~~rr~~|—<br>~~ee~~<br>~~ee~~<br>~~ee~~|29<br>~~ee~~|—<br>~~ee~~||||
|Cres<br>~~rr~~|Reverse Transfer Capacitance<br>~~rr~~|—<br>~~ee~~|10|—||||
|RBSOA<br>~~rr~~|Reverse Bias Safe Operating Area<br>~~rr~~|FULL SQUARE<br>~~ee~~||||TJ= 175°C, IC= 24A<br>VCC= 500V, Vp =600V<br>RG= 100Ω,VGE= +20V to 0V|4<br>CT2|
|SCSOA<br>~~rr~~|Short Circuit Safe Operating Area<br>~~rr~~|—<br>~~ee~~|5|—|µs|VCC= 400V, Vp =600V<br>RG= 100Ω,VGE= +15V to 0V|22<br>CT3, WF4|
|Erec|Reverse recoveryenergyof the diode<br>~~ee~~|—<br>~~ee~~|178<br>~~ee~~|—<br>~~ee~~|µJ<br>~~ee~~|TJ= 175<br>oC<br>VCC= 400V, IF= 6.0A<br>VGE= 15V,Rg= 47Ω,L=1mH,LS=150nH|17,18,19<br>20,21<br>WF3|
|trr|Diode Reverse recoverytime<br>~~ee~~|—<br>~~ee~~|74<br>~~ee~~|—<br>~~ee~~|ns<br>~~ee~~|||
|Irr|Peak Reverse RecoveryCurrent<br>~~ee~~|—<br>~~ee~~|12<br>~~ee~~|—<br>~~ee~~|A<br>~~ee~~|||
Notes:
VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47 Ω.
Pulse width limited by max. junction temperature.
θ ° When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended Refer to AN-1086 for guidelines for measuring Vgryces Safely. footprint and soldering techniques refer to application note #AN-994.
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2
AUIRGR/U4045D
## **Qualification Information[†]**
|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments: This part number(s) passed Automotive qualification.<br>IR’s Industrial and Consumer qualification level is granted by<br>extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||D-Pak|MSL1|
|||I-PAK||
|**ESD**|Machine Model|Class M2 (+/- 200V)†††<br>AEC-Q101-002||
||Human Body Model|Class H1A (+/- 500V)†††<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 1000V)†††<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
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## AUIRGR/U4045D
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1412108 ETH INYENGERRIN yy yy<br>6 P CEPNE EEE<br>4 t L x<br>TE NEE LI<br>2<br>C ECCEENGE<br>0 P E EE EELEN<br>0 20 40 60 80 100 120 140 160 180<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
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100<br>10µsec<br>10 100µsec<br>DC<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>a ie<br>0.1<br>1 10 100 1000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 3** - Forward SOA, TC = 25°C, TJ ≤ 175°C, VGE = 15V
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20<br>| |}<br>15 Top VGE = 18V<br>V = 15V<br>GE<br>VGE = 12V<br>V = 10V<br>GE<br>10 laa Bottom VGE = 8.0V<br>| |<br>5<br>Zann<br>0 FEL<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
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8070 F R ELL LTT<br>60<br>P i; NEEL ELL<br>50<br>C CPRCETEE<br>40<br>F ERED<br>30<br>S aeeeNGee<br>T TP TT<br>20<br>10 E EEEEESE<br>0 PET ETE LN<br>0 20 40 60 80 100 120 140 160 180<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 2** - Power Dissipation vs. Case Temperature
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100<br>10<br>1<br>0 FFA HE<br>10 100 1000<br>VCE (V)<br>IC A)<br>**----- End of picture text -----**<br>
**Fig. 4** - Reverse Bias SOA TJ = 175°C, VGE = 20V
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20<br>15 Top VGE = 18V<br>V = 15V<br>GE<br>VGE = 12V<br>V = 10V<br>GE<br>10 | PL et Bottom V GE = 8.0V<br>AEE<br>5<br>fect<br>0 fe<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs
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AUIRGR/U4045D
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20<br>Top VGE = 18V<br>V = 15V<br>GE<br>VGE = 12V<br>V = 10V<br>GE<br>15 Bottom V GE = 8.0V<br>10 S/n<br>a=<br>5<br>pi<br>0 Vanna<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 7** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs
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20<br>18<br>16<br>-40°C<br>14 25°C<br>175°C<br>12<br>i f<br>10<br>8<br>6<br>= ~)<br>4<br>=<br>2<br>0 a) A<br>0.0 1.0 2.0 3.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>
**Fig. 8** - Typ. Diode Forward Characteristics tp = 80µs
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1086 TT hIL ICE = 3.0A 1086 Tt p T ICE = 3.0A<br>ICE = 6.0A ICE = 6.0A<br>4 ICE = 12A 4 ICE = 12A<br>m is l ee<br>2 2<br>Te<br>| Pe<br>= = =<br>0 0<br>5 10 15 20 5 10 15 20<br> VGE (V) VGE (V)<br>Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE<br>TJ = -40°C TJ = 25°C<br>10 2018 | | | |SFL<br>T = 25°C<br>J<br>8 16 TJ = 175°C<br>14<br>ICE = 3.0A<br>6 He ICE = 6.0A 12 |<br>ICE = 12A | 10 E S<br>4 he) 8 E EF<br>6<br>2 SS 4<br>2<br>0 =S{ 0 Bee<br>5 10 15 20 4 6 8 10 12 14 16<br> VGE (V) VGE, Gate-to-Emitter Voltage (V)<br>Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics<br>TJ = 175°C VCE = 50V; tp = 10µs<br>VCE (V) VCE (V)<br>VCE (V)<br>IC, Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>
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5
## AUIRGR/U4045D
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400<br>350<br>300 cennee<br>250<br>200 EOFF<br>Y/,<br>150<br>100 | EON<br>50 HACE<br>0 2 4 6 8 10 12 14<br>IC (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>
**Fig. 13** - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47 Ω ; VGE = 15V.
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220<br>200<br>180 EOFF A A<br>160 waar ae<br>140 EON<br>120<br>yf7 ote<br>100<br>8060 i( |<br>0 25 50 75 100 125<br>Rg ( Ω )<br>Fig. 15 - Typ. Energy Loss vs. RG<br> = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15VCE = 400V, ICE = 6.0A; VGE = 15V= 400V, ICE = 6.0A; VGE = 15VCE = 6.0A; VGE = 15V= 6.0A; VGE = 15VGE = 15V= 15V<br>30<br>25 P t | | ] fi<br>RG = 10 Ω<br>20<br>P { ft<br>15 RG = 22 Ω<br>10 o ce RG = a 47 Ω n A<br>5 ee RG = 100 Ω<br>P P<br>0 P| tt td<br>2 4 6 8 10 12 14<br>IF (A)<br>IRR (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15VCE = 400V, ICE = 6.0A; VGE = 15V= 400V, ICE = 6.0A; VGE = 15VCE = 6.0A; VGE = 15V= 6.0A; VGE = 15VGE = 15V= 15V
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1000<br>E tdOFF E T TT<br>100 r eeeee<br>tF<br>tdON =<br>10<br>tR<br>P RE<br>E E<br>1<br>2 4 6 8 10 12 14<br>IC (A)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 14** - Typ. Switching Time vs. IC TJ = 175°C; L=1mH; VCE= 400V RG= 47 Ω ; VGE= 15V
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1000<br>ee ee<br>tdOFF<br>100<br>|<br>tF<br>tdON<br>10 S ___SS|<br>tR<br>P RP<br>pf<br>1<br>0 25 50 75 100 125<br>RG ( Ω )<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 16** - Typ. Switching Time vs. RG TJ = 175°C; L=1mH; VCE= 400V ICE= 6.0A; VGE= 15V
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22<br>20<br>T T df.<br>18<br>16<br>A EE<br>14<br>12<br>10<br>P N<br>8<br>T PP NT<br>6 e e<br>0 25 50 75 100 125<br>RG ( Ω)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 17** - Typical Diode IRR vs. IF TJ = 175°C
**Fig. 18** - Typical Diode IRR vs. RG TJ = 175°C; IF = 6.0A
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AUIRGR/U4045D
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20<br>18<br>F f ft ft tA<br>16<br>{ ttf |<br>14<br>12 a venue<br>10<br>H EAR<br>8 t A | | ft<br>P PLE<br>6<br>0 200 400 600 800 1000 1200<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br>
**Fig. 19** - Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 6.0A; TJ = 175°C
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350<br>300 T TT<br>RG = 10 Ω<br>250<br>RG = 22 Ω<br>PS<br>200<br>Za<br>RG = 47 Ω<br>150<br>ed RG = 100 Ω<br>100<br>yan<br>PEE<br>50<br>2 4 6 8 10 12 14<br>IF (A)<br>Fig. 21 - Typical Diode ERR vs. IF<br>TJ = 175°C<br>1000<br>Cies<br>ae ee ee ee ee<br>100<br>= aaee<br>Coes<br>10<br>I S S<br>Cres<br>SS oo<br>1 |<br>0 100 200 300 400 500<br>VCE (V)<br>Energy (µJ)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
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1200 P f<br>1000<br>12A<br>10 Ω<br>a 22 Ω =<br>800<br> 47 Ω<br>600 (lL 6.0A<br>100 Ω<br>as a<br>400<br>— 3.0A<br>200 yp<br>0 500 1000 1500<br>diF /dt (A/µs)<br>Fig. 20 - Typical Diode QRR<br>VCC= 400V; VGE= 15V; TJ = 175°C<br>20 50<br>Tsc<br>15 40<br>Isc<br>10 N y 30<br>a Van<br>5 A 20<br>7<br>0 E4nee 10<br>8 10 12 14 16 18<br>VGE (V)<br>Fig. 22 - Typ. VGE vs. Short Circuit Time<br>VCC=400V, TC =25°C<br>16<br>14 VCES = 400V<br>VCES = 300V<br>12<br>10<br>P e<br>8<br>6<br>4 2 .25enm<br>2<br>A EE<br>0<br>0 2 4 6 8 10 12 14<br>Q G, Total Gate Charge (nC)<br>QRR (nC)<br>Time (µs)<br>VGE, Gate-to-Emitter Voltage (V)<br>Current (A)<br>**----- End of picture text -----**<br>
**Fig. 24** - Typical Gate Charge vs. VGE ICE = 6.0A, L=600µH
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7
## AUIRGR/U4045D
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10<br>ee a ee ee | e e ee<br>1 D = 0.50<br>0 .2 0<br>rr TPP<br>0.1 J 0.050.01 0 0.02. 1 0 T o A τ J τ J τ 1 τ 1 R1 R1 τ 2 τ R22 R2 R τ 33 R τ 3 3 τ R4 τ 4R4 4 τ C τ Te Ri (°C/W) 0.0301 0.0000040.7200 0.0000670.7005 0.000898 τ i (sec)<br>T y 7 77 SH<br>> aT SINGLE PULSE iti EE Ci= Ci τ i / Rii / Ri PH 0.4479 0.005416<br>0.01 e ( THERMAL RESPONSE ) f<br>Notes:<br>Ee ee ee ee ee ee eee eee eee Yt ee<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 FEAFee ee Sp THE ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>D = 0. 50<br>eer HA HA<br>0.2 0 A aE<br>1 ee AE a<br>0. 10<br>0.1 b= 0. 0.020.0105 ECTAN T 7dH9Loe2A HL| On τ J τ J τ 1 τ ss 1 R1 R1 τ 2 τ R nn 22 R2 as R τ 33 R τ 3 3 ee τ R4 τ 4R4 4 || τ C τ UT Ri (°C/W) 0.2056 0.0000191.4132 0.0000953.3583 0.001204 τ i (sec)<br>aP tTEEt Ci= Ci τ i / Rii / Ri HEsoot 1.8245 0.009127<br>SINGLE PULSE<br>Notes:<br>AE ( THERMAL RESPONSE ) ERIE HI SH 1. Duty Factor D = t1/t2 FT E<br>2. Peak Tj = P dm x Zthjc + Tc<br>CC mil<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig. 26.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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AUIRGR/U4045D
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L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.3** - S.C.SOA Circuit
**Fig.C.T.5** - Resistive Load Circuit
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**----- Start of picture text -----**<br>
L<br>80 V + DUT<br>- 480V<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.2** - RBSOA Circuit
**Fig.C.T.4** - Switching Loss Circuit
**Fig.C.T.6** - Typical Filter Circuit for V Measurement (BR)CES
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## AUIRGR/U4045D
**==> picture [209 x 256] intentionally omitted <==**
**----- Start of picture text -----**<br>
600 12<br>500 10<br>400 8<br>7 [en]<br>tf<br>300 6<br>ahr<br>90% ICE<br>200 4<br>5% ICE<br>100 2<br>2 ee<br>5% VCE<br>0 0<br>Eoff Loss<br>-100 -2<br>-0.2 0 0.2 0.4 0.6 0.8 1<br>time(µs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br>
**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4
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**----- Start of picture text -----**<br>
100 15<br>0 Q RR 10<br>tRR<br>-100 5<br>Vy<br>-200 0<br>10%<br>Peak<br>-300 Peak -5<br>Ay IRR<br>IRR<br>\\<br>-400 -10<br>-500 -15<br>-600 -20<br>ee<br>-0.05 0.05 0.15 0.25<br>time (µS)<br> (V)<br>F<br>V<br>**----- End of picture text -----**<br>
WF.3- Typ. Diode Recovery Waveform @ TJ = 175°C using CT.4
**==> picture [207 x 254] intentionally omitted <==**
**----- Start of picture text -----**<br>
600 30<br>500 tr 25<br>TEST<br>CURRENT<br>400 20<br>90% test<br>300 15<br>a current<br>200 10<br>10% test<br>current<br>100 5<br>AN 5% VCE<br>0 0<br>Eon Loss<br>-100 -5<br>4.3 4.5 4.7<br>time (µs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br>
**Fig. WF2** - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4
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**----- Start of picture text -----**<br>
500 80<br>450 VCE 70<br>400 60<br>350 50<br>300 pm 40<br>250 30<br>ICE<br>fp<br>200 20<br>| | a<br>150 10<br>100 0<br>50 -10<br>0 —OT -20<br>-2 -1 0 1 2 3 4 5 6 7 8<br>Time (uS)<br>Vce (V)<br>**----- End of picture text -----**<br>
WF.4- Typ. Short Circuit Waveform @ TJ = 25°C using CT.3
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## AUIRGR/U4045D
## D-Pak Part Marking Information
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## AUIRGR/U4045D
## I-Pak Part Marking Information
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AUIRGR/U4045D
**==> picture [431 x 372] intentionally omitted <==**
**----- Start of picture text -----**<br>
TR TRR TRL<br>SOOO OO © t o © @ © :<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1. CONTROLLING DIMENSION : MILLIMETER.<br>2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br> 13 INCH<br>DZ OQ y O :<br>16 mm =|<br>**----- End of picture text -----**<br>
## NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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## AUIRGR/U4045D
## **Ordering Information**
|**Base part number**|**Package Type**|**Standard Pack**||**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRGR4045D|Dpak|Tube|75|AUIRGR4045D|
|||Tape and Reel|2000|AUIRGR4045DTR|
|||Tape and Reel Left|3000|AUIRGR4045DTRL|
|||Tape and Reel Right|3000|AUIRGR4045DTRR|
|AUIRGU4045D|Ipak|Tube|75|AUIRGU4045D|
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AUIRGR/U4045D
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
## **WORLD HEADQUARTERS:**
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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