AUIRGP4062D-E

IGBT, 48 A, 1.6 V, 250 W, 600 V, TO-247AD, 3 Pins

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Manufacturer: INFINEON
Product type: Single IGBTs
No. of Pins: 3Pins
Power Dissipation: 250W
Transistor Mounting: Through Hole
Transistor Case Style: TO-247AD
Operating Temperature Max: 175°C
Continuous Collector Current: 48A
Collector Emitter Voltage Max: 600V
Automotive Qualification Standard: AEC-Q101
Collector Emitter Saturation Voltage: 1.6V

Delivery and price
Units per pack	250
Price	3.65 €
Current stock	10+
Lead time	30 days

Datasheet

PD - 96353A 

AUIRGP4062D AUIRGP4062D-E 

## _**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**_ 

## **Features** 

- Low VCE (on) Trench IGBT Technology 

- Low Switching Losses 

- 5μs SCSOA 

- Square RBSOA 

- 100% of The Parts Tested for ILM 

- Positive VCE (on) Temperature Coefficient. 

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**----- Start of picture text -----**<br>
C<br>VCES = 600V<br>IC = 24A, TC = 100°C<br>G tSC ≥  5μs, TJ(max) = 175°C<br>E VCE(on) typ. = 1.60V<br>n-channel<br>**----- End of picture text -----**<br>


- Ultra Fast Soft Recovery Co-pak Diode 

- Tighter Distribution of Parameters 

- Lead-Free, RoHS Compliant 

- Automotive Qualified * 

## **Benefits** 

- High Efficiency in a Wide Range of Applications 

- Suitable for a Wide Range of Switching Frequencies due 

- to Low VCE (ON) and Low Switching Losses 

- Rugged Transient Performance for Increased Reliability 

- Excellent Current Sharing in Parallel Operation 

- Low EMI 

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C<br>C<br>E<br>E<br>G [C]<br>C<br>G<br>TO-247AC TO-247AD<br>AUIRGP4062D AUIRGP4062D-E<br>G C  E<br>Gate Collector Emitter<br>———<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified 

|~~OT~~|**Parameter**<br>~~OT~~|**Max.**<br>~~OT~~<br>~~DET~~|**Units**<br>~~OT~~<br>~~DET~~|
|---|---|---|---|
|VCES<br>~~OT~~<br>~~a~~<br>~~—————~~|Collector-to-Emitter Voltage<br>~~OT~~<br>~~a~~<br>~~—————~~|600<br>~~OT~~<br>~~DET~~<br>~~a~~<br>~~—————~~|V<br>~~OT~~<br>~~DET~~<br>~~a~~|
|IC@ TC= 25°C<br>~~a~~<br>~~—————~~|Continuous Collector Current<br>~~a~~<br>~~—————~~|48<br>~~a~~<br>~~—————~~|A<br>~~a~~<br>~~a~~<br>~~:~~|
|IC@ TC= 100°C<br>~~a~~<br>~~—————~~|Continuous Collector Current<br>~~a~~<br>~~—————~~|24<br>~~a~~<br>~~—————~~||
|ICM<br>~~—————~~|Pulse Collector Current,VGE= 15V<br>~~—————~~|72<br>~~—————~~||
|ILM<br>~~—————~~<br>~~SC~~<br>~~FS~~|Clamped Inductive Load  Current,VGE= 20V<br>~~—————~~<br>~~SC~~<br>|96<br>~~—————~~<br>~~SC~~<br>||
|IF@ TC= 25°C<br>~~—————~~<br>~~FS~~|Diode Continous Forward Current<br>~~—————~~<br>|48<br>~~—————~~<br>||
|IF@ TC= 100°C<br>~~—————~~<br>~~FSa~~|Diode Continous Forward Current<br>~~—————~~<br>~~a~~|24<br>~~—————~~<br>~~a~~||
|IFM<br>~~—————~~<br>~~RS~~|Diode Maximum Forward Current<br>~~—————~~<br>~~:~~<br>~~—~~<br>~~RS~~|96<br>~~—————~~<br>~~:~~<br>~~—~~||
|VGE<br>~~—————~~<br>~~RS~~<br>~~a~~|Continuous Gate-to-Emitter Voltage<br>~~—————~~<br>~~—~~<br>~~RS~~<br>~~a]~~|±20<br>~~—————~~<br>~~—~~<br>~~a]~~|V<br>~~ee~~|
||Transient Gate-to-Emitter Voltage<br>~~—~~<br>~~RS~~<br>~~a]~~|±30<br>~~—~~<br>~~a]~~<br>~~ee~~||
|PD@ TC= 25°C<br>~~RS~~<br>~~OO~~<br>~~a~~|Maximum Power Dissipation<br>~~—~~<br>~~RS~~<br>~~OO~~|250<br>~~—~~<br>~~OO~~<br>~~ee~~|W<br>~~OO~~<br>~~ee~~|
|PD@ TC= 100°C<br>~~OO~~<br>~~a~~|Maximum Power Dissipation<br>~~OO~~<br>~~ee~~|125<br>~~OO~~<br>~~ee~~<br>~~ee~~||
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55 to +175<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|
|~~a~~<br>~~oO~~|Soldering Temperature, for 10 sec.<br>~~ee~~<br>~~a~~<br>~~oO~~<br>~~eeeeeeeeeesa—s~~|300 (0.063 in. (1.6mm) from case)<br>~~ee~~<br>~~a~~<br>~~eeeeeeeeeesa—see~~||
|~~oO~~|Mounting Torque, 6-32 or M3 Screw<br>~~ee~~<br>~~oO~~<br>~~eeeeeeeeeesa—s~~|10 lbf·in (1.1 N·m)<br>~~ee~~<br>~~eeeeeeeeeesa—see~~||



***** Qualification standards can be found at http://www.irf.com/ 

www.irf.com 

1 

12/14/11 

## AUIRGP4062D/P4062D-E 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units **|**Conditions**|**Ref.Fig**|
|---|---|---|---|---|---|---|---|
|V(BR)CES|Collector-to-Emitter Breakdown Voltage<br>~~GO~~|600<br>~~GO~~|—<br>~~GO~~|—<br>~~GO~~|V<br>~~GO~~|VGE= 0V, IC= 100μA<br>~~GO~~|CT6<br>~~GO~~|
|ΔV(BR)CES/ΔTJ|Temperature Coeff. of Breakdown Voltage<br>~~GO~~<br>~~GO~~|—<br>~~GO~~<br>~~GO~~|0.30<br>~~GO~~<br>~~GO~~|—<br>~~GO~~<br>~~GO~~|V/°C <br>~~GO~~<br>~~GO~~|VGE= 0V,IC= 1mA(25°C-175°C)<br>~~GO~~<br>~~GO~~|CT6<br>~~GO~~<br>~~GO~~|
|VCE(on)<br>~~Ne~~|Collector-to-Emitter Saturation Voltage<br>~~GO~~<br>~~Ne~~|—<br>~~GO~~|1.60<br>~~GO~~<br>~~PT~~|1.95<br>~~GO~~<br>~~PT~~|V<br>~~GO~~|IC= 24A, VGE= 15V, TJ= 25°C<br>~~GO~~|5,6,7<br>9,10,11<br>~~GO~~|
|||—|2.03<br>~~PT~~|—<br>~~PT~~||IC= 24A,VGE= 15V,TJ= 150°C||
|||—|2.04<br>~~PT~~|—<br>~~PT~~||IC= 24A, VGE= 15V, TJ= 175°C||
|VGE(th)<br>~~Ne~~|Gate Threshold Voltage<br>~~Ne~~|4.0|—<br>~~PT~~|6.5<br>~~PT~~|V|VCE= VGE,IC= 700μA|9, 10,<br>11, 12|
|ΔVGE(th)/ΔTJ<br>~~Ne~~|Threshold Voltage temp. coefficient<br>~~Ne~~<br>~~DD~~|—<br>~~DD~~|-18<br>~~PT~~|—<br>~~PT~~<br>~~QO~~|mV/°C V<br>~~QO~~|mV/°C VCE= VGE, IC= 1.0mA(25°C - 175°C)<br>~~QO~~||
|gfe<br>~~Ne~~|Forward Transconductance<br>~~Ne~~<br>~~GOO~~|—<br>~~GOO~~|17<br>~~PT~~<br>~~GOO~~|—<br>~~PT~~<br>~~GOO~~|S<br>~~GOO~~|VCE= 50V,IC= 24A,PW = 80μs<br>~~GOO~~|~~GOO~~|
|ICES|Collector-to-Emitter Leakage Current<br>~~Se~~|—<br>~~Se~~|2.0<br>~~Se~~|25<br>~~Se~~|μA<br>~~Se~~|VGE= 0V, VCE= 600V<br>~~Se~~|~~Se~~|
|||—<br>~~Se~~|775<br>~~Se~~<br>~~PT~~|—<br>~~Se~~<br>~~PT~~||VGE= 0V,VCE= 600V,TJ= 175°C<br>~~Se~~||
|VFM|Diode Forward Voltage Drop<br>~~Se~~<br>~~EEE~~|—<br>~~Se~~<br>~~EEE~~|1.80<br>~~Se~~<br>~~PT~~<br>~~EEE~~|2.6<br>~~Se~~<br>~~PT~~<br>~~EEE~~|V<br>~~Se~~<br>~~EEE~~<br>~~GAO~~|IF= 24A<br>~~Se~~<br>~~EEE~~|8<br>~~Se~~<br>~~EEE~~|
|||—<br>~~EEE~~|1.28<br>~~EEE~~<br>~~PT~~|—<br>~~EEE~~<br>~~PT~~||IF= 24A,TJ= 175°C<br>~~EEE~~<br>~~GAO~~||
|IGES|Gate-to-Emitter Leakage Current<br>~~I~~|—<br>~~I~~|—<br>~~I~~|±100<br>~~I~~|nA<br>~~I~~<br>~~GAO~~|VGE= ±20V<br>~~I~~<br>~~GAO~~|~~I~~|



## **Switching Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|**Ref.Fig**|
|---|---|---|---|---|---|---|---|
|Qg|Total Gate Charge(turn-on)<br>~~es~~|—<br>~~es~~|50<br>~~es~~|75<br>~~es~~|nC|IC= 24A<br>VGE= 15V<br>VCC= 400V|24<br>CT1|
|Qge|Gate-to-Emitter Charge(turn-on)<br>~~ee~~|—<br>~~ee~~|13<br>~~ee~~|20<br>~~ee~~||||
|Qgc|Gate-to-Collector Charge(turn-on)<br>~~es~~|—<br>~~es~~|21<br>~~es~~|31<br>~~es~~||||
|Eon|Turn-On SwitchingLoss<br>~~ee~~|—<br>~~ee~~|115<br>~~ee~~|201<br>~~ee~~|μJ|IC= 24A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH, TJ= 25°C<br>Energylosses include tail & diode reverse recovery|CT4|
|Eoff|Turn-Off SwitchingLoss<br>~~es~~|—<br>~~es~~|600<br>~~es~~|700<br>~~es~~||||
|Etotal|Total SwitchingLoss<br>~~ee~~|—<br>~~ee~~|715<br>~~ee~~|901<br>~~ee~~||||
|td(on)|Turn-On delaytime<br>~~es~~|—<br>~~es~~|41<br>~~es~~|53<br>~~es~~|I<br>ns|IC= 24A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH, TJ= 25°C|CT4|
|tr|Rise time<br>~~ee~~|—<br>~~ee~~|22<br>~~ee~~|31<br>~~ee~~||||
|td(off)|Turn-Off delaytime<br>~~es~~|—<br>~~es~~|104<br>~~es~~|115<br>~~es~~||||
|tf|Fall time<br>~~ee~~|—<br>~~ee~~|29<br>~~ee~~|41<br>~~ee~~||||
|Eon|Turn-On SwitchingLoss<br>~~es~~|—<br>~~es~~|420<br>~~es~~|—<br>~~es~~|I<br>μJ|IC= 24A, VCC= 400V, VGE=15V<br>RG=10Ω, L= 200μH, LS=150nH, TJ= 175°C<br>Energylosses include tail & diode reverse recovery<br>co)|13, 15<br>CT4<br>WF1, WF2|
|Eoff<br>~~a~~|Turn-Off SwitchingLoss<br>~~ee~~<br>~~a~~|—<br>~~ee~~<br>|840<br>|—<br>||||
|Etotal<br>~~a~~|Total SwitchingLoss<br>~~a~~|—<br>|1260<br>|—<br>||||
|td(on)<br>~~a~~|Turn-On delaytime<br>~~aa~~|—<br>~~a~~|40<br>~~a~~|—<br>~~a~~|I<br>ns|IC= 24A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH<br>TJ= 175°C|14, 16<br>CT4<br>WF1<br>WF2|
|tr<br>~~a~~|Rise time<br>~~es~~<br>~~a~~|—<br>~~es~~|24<br>~~es~~|—<br>~~es~~||||
|td(off)<br>~~aa~~|Turn-Off delaytime<br>~~aa~~|—|125|—||||
|tf<br>~~aa~~<br>~~a~~|Fall time<br>~~aa~~<br>~~a~~|—<br>|39<br>|—<br>||||
|Cies<br>~~a~~<br>~~a~~|Input Capacitance<br>~~a~~<br>~~a~~|—<br>|1490<br>|—<br>|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz|23|
|Coes<br>~~a~~|Output Capacitance<br>~~aes~~|—<br>~~es~~|129<br>~~es~~|—<br>~~es~~||||
|Cres|Reverse Transfer Capacitance<br>~~es~~|—<br>~~es~~|45<br>~~es~~|—<br>~~es~~||||
|RBSOA|Reverse Bias Safe Operating Area<br>~~es~~|FULL SQUARE<br>~~es~~||||TJ= 175°C, IC= 96A<br>VCC= 480V, Vp =600V<br>Rg= 10Ω, VGE= +20V to 0V|4<br>CT2|
|SCSOA|Short Circuit Safe Operating Area|5|—|—|μs|VCC= 400V, Vp =600V<br>Rg= 10Ω, VGE= +15V to 0V|22, CT3<br>WF4|
|Erec|Reverse RecoveryEnergyof the Diode<br>~~es~~|—<br>~~es~~|621<br>~~es~~|—<br>~~es~~|μJ<br>~~es~~|TJ= 175°C<br>VCC= 400V, IF= 24A<br>VGE= 15V,Rg= 10Ω,L =200μH,Ls= 150nH|17, 18, 19<br>20, 21<br>WF3|
|trr|Diode Reverse RecoveryTime<br>~~es~~|—<br>~~es~~|89<br>~~es~~|—<br>~~es~~|ns<br>~~es~~|||
|Irr|Peak Reverse RecoveryCurrent<br>~~es~~|—<br>~~es~~|37<br>~~es~~|—<br>~~es~~|A<br>~~es~~|||



## **Notes:** 

> VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10 Ω. This is only applied to TO-220AB package. 

> Pulse width limited by max. junction temperature. 

> Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 

www.irf.com 

2 

AUIRGP4062D/P4062D-E 

|**Qualification Information**<br>**†**|**Qualification Information**<br>**†**|||
|---|---|---|---|
|**Moisture Sensitivity Level**<br>**Qualification Level**||Automotive<br>(per AEC-Q101) ††||
|||Comments: This part number(s) passed Automotive qualification.<br>IR’s<br>Industrial and Consumer qualification level is<br>granted by<br>extension of the higher Automotive level.||
|||3L-TO-247AC|N/A|
|||3L-TO-247AD||
|**ESD**|Machine Model|Class M4(+/- 400V )†††<br>(per AEC-Q101-002)||
||Human Body Model|Class H1C(+/- 2000V )†††<br>(per AEC-Q101-001)||
||Charged Device Model|Class C5(+/- 1000V )†††<br>(per AEC-Q101-005)||
|**RoHS Compliant**||Yes||



† Qualification standards can be found at International Rectifier’s web site:  http//www.irf.com/ 

†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. 

†††    Highest passing voltage 

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3 

## AUIRGP4062D/P4062D-E 

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50<br>45 FRILL<br>40 TT XEELLEL EI<br>35 rT INCELLEL<br>30<br>Pt | IN | EE<br>25 TEEPE NEL<br>20<br>PEEFENCEE<br>15 rT LET X LE<br>10<br>5 PEE EIN<br>FEE EEE NI<br>0<br>0 20 40 60 80 100 120 140 160 180<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>


**Fig. 1** - Maximum DC Collector Current vs. Case Temperature 

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1000<br>100<br>10μsec<br>10<br>100μsec<br>1 1msec<br>Tc = 25°C<br>DC<br>Tj = 175°C<br>Single Pulse<br>a<br>0.1<br>1 10 100 1000 10000<br>VCE (V)<br>Fig. 3  - Forward SOA<br>TC = 25°C, TJ ≤  175°C; VGE =15V<br>90<br>80<br>CT TRE<br>70 V GE  = 18V<br>PPK<br>VGE = 15V<br>60 TT TSS VGE = 12V<br>VGE = 10V<br>50 VGE = 8.0V<br>40 So<br>30<br>AE TT<br>TALL<br>20<br>10<br>UAL TT yt |<br>0 ee ee<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>IC (A)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 

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300<br>250<br>ERRREREEE<br>ENG<br>200 SeRNGEEEe<br>150 \<br>COPE<br>100<br>NN<br>50<br>0 LLLPEEELEENLLIN NX ET<br>0 20 40 60 80 100 120 140 160 180<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>


**Fig. 2** - Power  Dissipation vs. Case Temperature 

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1000<br>100<br>10<br>LT<br>1<br>10 100 1000<br>VCE (V)<br>Fig. 4  - Reverse Bias SOA<br>TJ = 175°C; VGE =20V<br>IC (A)<br>**----- End of picture text -----**<br>


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90<br>80<br>TTA TTT<br>70<br>CPS<br>VGE = 18V<br>60 TeeEE VGE = 15V<br>VGE = 12V<br>50<br>VGE = 10V<br>40 SoA VGE = 8.0V<br>30<br>PT er<br>20 20<br>10<br>YW<br>0 TF [ELECT]<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs 

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## AUIRGP4062D/P4062D-E 

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**----- Start of picture text -----**<br>
90<br>80 V GE  = 18V WIE<br>VGE = 15V<br>70 VGE = 12V<br>VGE = 10V<br>60 VGE = 8.0V Janne<br>50<br>40<br>30<br>ha<br>20<br>ap cone<br>10 AE ELLL<br>0 AECCCEE<br>0 1 2 3 4 5 6 7 8<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 7** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs 

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20<br>18 ee<br>16<br>14<br>12 I CE  = 12A<br>10 ICE = 24A<br>8 I CE  = 48A<br>6<br>4 et<br>2 A<br>0 ee eee<br>5 10 15 20<br> VGE (V)<br>Fig. 9  - Typical VCE vs. VGE<br>TJ = -40°C<br>20<br>18<br>16 r TT ]f of<br>14 TP<br>12 I CE  = 12A<br>10 ott ICE = 24A<br>8 I CE  = 48A<br>6<br>4<br>or<br>2<br>0 SSS<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 11** - Typical VCE vs. VGE TJ = 175°C 

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120<br>)<br>100<br>80 -40°c =<br>25°C<br>175°C<br>60<br>40<br>y/o<br>20<br>,<br>Z|<br>0 | |<br>0.0 1.0 2.0 3.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>


**Fig. 8** - Typ. Diode Forward Characteristics tp = 80μs 

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20 es<br>18<br>16<br>14<br>12 I CE  = 12A<br>10 ICE = 24A<br>8 I CE  = 48A<br>6<br>4 el<br>2 ee<br>0 esee<br>5 10 15 20<br> VGE (V)<br>Fig. 10  - Typical VCE vs. VGE<br>TJ = 25°C<br>120<br>100<br>Ff |<br>TJ = 25°C<br>80 T e/ J  = 175°C a<br>of<br>60<br>—<br>40<br>20<br>if<br>0 | fF | |<br>0 5 10 15<br> VGE (V)<br>VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 10μs 

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## AUIRGP4062D/P4062D-E 

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**----- Start of picture text -----**<br>
1800 1000<br>1600<br>1400 tdOFF<br>1200 an Ase 100 pf<br>1000 EOFF tdON<br>800 t F<br>600 PS EON 10 ee tR  a ee ae<br>f —<br>400<br>200 / Ee ee es<br>0 CE 1 ee<br>0 10 20 30 40 50 60 10 20 30 40 50<br>IC (A)<br>IC (A)<br>Fig. 13  - Typ. Energy Loss vs. ICC Fig. 14  - Typ. Switching Time vs. ICC<br> = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE = 15VGE = 15V= 15V TJ = 175°C; L = 200μH; VCE = 400V, RG = 10J = 175°C; L = 200μH; VCE = 400V, RG = 10 = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE GE = 15V<br>1600 1000<br>1400<br>1200 Vion tdOFF —<br>EON<br>1000 Oe Ppa<br>EOFF<br>800 100<br>FO —T<br>600 ae tdON | | |<br>400 (7A | | | eeep= t F<br>200 tR<br>0 f+FT | TT 10 Trill.Ff| |<br>0 25 50 75 100 125 0 25 50 75 100 125<br>Rg ( Ω ) RG ( Ω )<br>Fig. 15  - Typ. Energy Loss vs. RGG Fig. 16  - Typ. Switching Time vs. RGG<br> = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15VCE = 400V, ICE = 24A; VGE = 15V= 400V, ICE = 24A; VGE = 15VCE = 24A; VGE = 15V= 24A; VGE = 15VGE = 15V= 15V TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE J = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE  = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE CE = 400V, ICE = 24A; VGE = 400V, ICE = 24A; VGE CE = 24A; VGE = 24A; VGE GE = 15V<br>40 4540<br>RG = 10 Ω 40 Ft ff<br>35<br>Vi<br>35<br>30<br>RG = 22 Ω 30 F\i fF[[ | | }ffff<br>25 2520 PNPING[| [| | ff |<br>RG = 47 Ω 20 PING[| [ft|<br>20 ee<br>RG = 100 Ω 15<br>15<br>105 FfFtftffTtftTtff ffTtftTtff<br>10 5 FtftffTtftTtff ff<br>0 10 20 30 40 50 60 0 25 50 75 100 125<br>IF (A) RG ( Ω)<br>Energy (μJ)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>IRR (A) IRR (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br>


**Fig. 13** - Typ. Energy Loss vs. ICC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE = 15VGE = 15V= 15V 

**Fig. 14** - Typ. Switching Time vs. ICC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10J = 175°C; L = 200μH; VCE = 400V, RG = 10 = 175°C; L = 200μH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10= 10 Ω ; VGE GE = 15V 

**Fig. 16** - Typ. Switching Time vs. RGG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE J = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE  = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE CE = 400V, ICE = 24A; VGE = 400V, ICE = 24A; VGE CE = 24A; VGE = 24A; VGE GE = 15V 

**Fig. 15** - Typ. Energy Loss vs. RGG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15VCE = 400V, ICE = 24A; VGE = 15V= 400V, ICE = 24A; VGE = 15VCE = 24A; VGE = 15V= 24A; VGE = 15VGE = 15V= 15V 

**==> picture [201 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
4540 Ft ff<br>Vi<br>35<br>30 F\i fF[[ | | }ffff<br>2520 PNPING[| [ft| ff |<br>ee<br>15<br>105 FfFtftffTtftTtff<br>0 25 50 75 100 125<br>RG ( Ω)<br>IRR (A)<br>**----- End of picture text -----**<br>


**Fig. 17** - Typ. Diode IRR vs. IF TJ = 175°C 

**Fig. 18** - Typ. Diode IRR vs. RG TJ = 175°C 

www.irf.com 

6 

AUIRGP4062D/P4062D-E 

**==> picture [532 x 684] intentionally omitted <==**

**----- Start of picture text -----**<br>
TER Rectifier<br>45 4000<br>48A<br>40 es 3500 a ee<br>35 10 Ω<br>3000<br>30  22 Ω<br>a aa rv YN<br>2500<br> 47 Ω<br>25 100 Ω 24A<br>SE WA<br>2000<br>a \<br>20<br>1500<br>4 ae \\ 4<br>15<br>12A<br>1000<br>10 es ee aepi<br>5 es ee 500 ee=ee<br>0 500 1000 1500 0 500 1000 1500<br>diF /dt (A/μs) diF /dt (A/μs)<br>Fig. 19  - Typ. Diode IRR vs. diF/dt Fig. 20  - Typ. Diode QRR vs. diF/dt<br>VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C<br>1000 16 280<br>14 240<br>800<br>RG = 47 Ω<br>RG = 10 Ω 12 200<br>TA, A<br>600<br>RG = 22 Ω 10 160<br>400 ee RG = 100 Ω wee<br>8 120<br>AL HH<br>200<br>0 PittIa 64 YNPf| NIT 8040<br>0 10 20 30 40 50 60 8 10 12 14 16 18<br>IF (A) VGE (V)<br>Fig. 21  - Typ. Diode ERR vs. IF Fig. 22  - VGE vs. Short Circuit Time<br>TJ = 175°C VCC = 400V; TC = 25°C<br>10000 a 1614 TT VCES = 300V TH<br>VCES = 400VCES = 400V = 400V<br>===== 12 c/n<br>1000 Cies<br>10<br>Ss iYTYT<br>8<br>Nee CoPEEEELELE<br>6<br>100 Coes<br>4<br>2<br>Cres<br>ee JCC<br>10 0<br>0 20 40 60 80 100 0 5 10 15 20 25 30 35 40 45 50 55<br>VCE (V) Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>Time (μs)<br>IRR (A)<br>Energy (μJ)<br>Capacitance (pF)<br>QRR (nC)<br>Current (A)<br>**----- End of picture text -----**<br>


**==> picture [194 x 193] intentionally omitted <==**

**----- Start of picture text -----**<br>
141614 TT VCES = 300V TH<br>VCES = 400VCES = 400V = 400V<br>12 c/n<br>10<br>iYTYT<br>8<br>CoPEEEELELE<br>6<br>4<br>2<br>JCC<br>0<br>0 5 10 15 20 25 30 35 40 45 50 55<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 24** - Typical Gate Charge vs. VGE ICE = 24A; L = 600μH 

**Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 

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## AUIRGP4062D/P4062D-E 

**==> picture [445 x 545] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 FTa  TTTee OP eeeOOee e e eeeLeee eee ee ee<br>e<br>D = 0.50<br>Pe nn, eee ee ee<br>a eee TH<br>0 . 20<br>0.1 es = PAP UL |<br>—_ ort a<br>0.10<br>csIz 0 . 0 5 Lt|AeTatey" | || eee R 1R1 eee R 2R2 Ri (°C/W ee )  τ i (sec) Lt<br>ST Ai τ J τ Toy J τ C τ [| 0.2782    0.000311 at<br>ee 0.02 ea Zaill τ 1 τ 1 "tL τ 2 τ 2 — 0.3715    0.006347 TI<br>0.01 0.01<br>amy 700 Ci= Ci τ i / Rii / Ri ||<br>poa Aeeeeee ee<br>a Dk 0 ee 0 ee ee ee ee ee<br>ae ann SINGLE PULSE SE eee ee eee Notes: 0 ee<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 27.   Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC<br>10<br>et ee | | |<br>es Oe 1 ee OO On On<br>1 ee D = 0.50 ee St<br>0.20<br>|_| 0.10 PE ee ne nt |<br>0.1 sens 0.05 ema<br>0.02 R1R1 R2R2 R3R3 Ri (°C/W)     τ i (sec)<br>0.01 τ J τ J τ C τ 0.693      0.001222<br>0.01 SSp r ee cep τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 0.621      0.005254 i<br>Ci=  τ i / Ri 0.307      0.038140<br>P|ee bree eee Ci i / Ri -——ieil<br>0.001 es SINGLE PULSE ee<br>Notes:<br>( THERMAL RESPONSE )<br><— LTA eeba Hal ee 1. Duty Factor D = t1/t2 eee<br>2. Peak Tj = P dm x Zthjc + Tc<br>yer pas NH<br>0.0001<br>PETA PPE Hl<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig. 28.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247AC 

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8 

## AUIRGP4062D/P4062D-E 

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**----- Start of picture text -----**<br>
L<br>VCC<br>DUT<br>0<br>JL.<br>1K<br>**----- End of picture text -----**<br>


**Fig.C.T.1** - Gate Charge Circuit (turn-off) 

**==> picture [86 x 52] intentionally omitted <==**

**----- Start of picture text -----**<br>
4x<br>DC 0V<br>DUT<br>**----- End of picture text -----**<br>


**Fig.C.T.3** - S.C. SOA Circuit 

**==> picture [192 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>N04)<br>><br>80 V<br>DUT<br>480V<br>3 N e Rg w x<br>**----- End of picture text -----**<br>


**Fig.C.T.2** - RBSOA Circuit 

**==> picture [219 x 109] intentionally omitted <==**

**----- Start of picture text -----**<br>
diode clamp /<br>DU T<br>L<br>- 5V<br>DU T /<br>D RIVER VCC<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.4** - Switching Loss Circuit 

**==> picture [206 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCC<br>R =<br>ICM<br>DUT<br>VCC<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.5** - Resistive Load Circuit 

**Fig.C.T.6** - BVCES Filter Circuit 

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## AUIRGP4062D/P4062D-E 

**==> picture [501 x 602] intentionally omitted <==**

**----- Start of picture text -----**<br>
600 30 600 60<br>tf<br>500 25 500 ee ee 50<br>90% ICE VCE<br>C tr<br>400 20 400 40<br>ICE  VCE  ICE<br>300 i cen C 15 300 canaie C 30<br>90% test<br>200 | 10 200 AY ya 20<br>5% VCE 10% ICE<br>100 yt 5 100 ie, 10<br>5% ICE 5% VCE<br>pe UU<br>0 0 0 a ae 0<br>EOFF Loss EON<br>-100 -5 -100 -10<br>-0.40 0.10 0.60 11.70 11.90 12.10 12.30<br>Time(μs) Time (μs)<br>Fig. WF1  - Typ. Turn-off Loss Waveform Fig. WF2  - Typ. Turn-on Loss Waveform<br>@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4<br>30 600 300<br>20 QRR ICE<br>500 250<br>10<br>or tRR 400 ae 200<br>0<br>300 VCE 150<br>-10 TE Ro.<br>Peak<br>10%<br>-20 IRR Peak 200 100<br>IRR<br>100 50<br>-30 lf ae<br>yy =<br>-40 tv 0 | tL 0<br>-50 — -100 — -50<br>-0.15 -0.05 0.05 0.15 0.25 -5.00 0.00 5.00 10.00<br>time (μS) time (μS)<br> (V)  (V)<br>CE CE<br>V V<br> (A)  (V)  (A)<br>IRR VCE ICE<br>**----- End of picture text -----**<br>


**Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 

**Fig. WF4** - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 

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10 

## AUIRGP4062D/P4062D-E 

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## AUIRGP4062D/P4062D-E 

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## AUIRGP4062D/P4062D-E 

## **Ordering Information** 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRGP4062D|TO-247AC|Tube|25|AUIRGP4062D|
|AUIRGP4062D-E|TO-247AD|Tube|25|AUIRGP4062D-E|



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13 

## AUIRGP4062D/P4062D-E 

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. 

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.  Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. 

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices.  Reproduction of this information with alterations is an unfair and deceptive business practice.  IR is not responsible or liable for such altered documentation.  Information of third parties may be subject to additional restrictions. 

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice.  IR is not responsible or liable for any such statements. 

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur.  Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. 

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. 

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.  Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. 

For technical support, please contact IR’s Technical Assistance Center 

http://www.irf.com/technical-info/ 

## **WORLD HEADQUARTERS:** 

101 N. Sepulveda Blvd., El Segundo, California 90245 

Tel: (310) 252-7105 

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14

Updated at February 9, 2023

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