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AUIRGF66524D0
IGBT, 60 A, 1.6 V, 214 W, 600 V, TO-247AD, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: COOLiRIGBT
- Power Dissipation: 214W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AD
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 600V
- Automotive Qualification Standard: AEC-Q101
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 2.73 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
AUIRGP66524D0 AUIRGF66524D0 ## **AUTOMOTIVE GRADE** ## **COOLiR** _**IGBT**_ **™** ## _**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**_ VCES = 600V INOMINAL = 24A Tsc 6µs, TJ(MAX) = 175°C VCE(ON) typ. = 1.60V ## **Applications** Air Conditioning Compressor Auxiliary Motor Drive **==> picture [241 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>E<br>G G C C E<br>G<br>E TO-247AC TO-247AD<br>n-channel<br>AUIRGP66524D0 AUIRGF66524D0<br>G C E<br>Gate Collector Emitter<br>**----- End of picture text -----**<br> **==> picture [499 x 100] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |Features||Benefits| |Low VCE(on) Trench IGBT Technology|High Efficiency in a Wide Range of Applications| |Low Switching Losses|Suitable for a Wide Range of Switching Frequencies| |6µs SCSOA Guaranteed|Enables Short Circuit Protection Scheme| |Square RBSOA and 100% Clamp IL Tested|Rugged Hard Switching Operation| |Positive VCE(on) Temperature Coefficient|Enables Easy Paralleling of Devices| |Ultra Fast Soft Recovery Co-pak Diode|Better Efficiency and Improved EMI Performance| |Lead-Free, RoHS Compliant, Automotive Qualified *|Environmentally Friendly| **----- End of picture text -----**<br> **==> picture [511 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Base Part Number|Package Type|Standard Pack|Orderable Part Number| |Form|Quantity| |AUIRGP66524D0|TO-247AC|Tube|25|AUIRGP66524D0| |AUIRGF66524D0|TO-247AD|Tube|25|AUIRGF66524D0| **----- End of picture text -----**<br> ## **Absolute Maximum Ratings** **==> picture [540 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These| |are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in| |the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device| |reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-| |°| |tions. Ambient temperature (TA) is 25|C, unless otherwise specified.| |Parameter|Max.|Units| |es| |a|VCES|(OU|Collector-to-Emitter Voltage|600|V| |a|INominal|Nominal Collector Current|24| |es|IC|@ TC = 25°C|Continuous Collector Current|60| |a|IC|@ TC = 100°C|Continuous Collector Current|40| |ICM|Pulse Collector Current, VGE = 15V|72|A| |Ce| |Pe|ILM|Clamped Inductive Load Current, VGE = 20V |96| |ee|IF|@ TC = 25°C|Diode Continous Forward Current|55| |a|IF|@ TC = 100°C|Diode Continous Forward Current|35| |IFM|Diode Maximum Forward Current |72| |es|VGE|a|Continuous Gate-to-Emitter Voltage|±20|V| |Transient Gate-to-Emitter Voltage|±30| |a|dV/dt|OO|Maximum Voltage Transient|15|V/ns| |PD|@ TC = 25°C|Maximum Power Dissipation|214|W| |eea|PD|@ TC = 100°C|Maximum Power Dissipation|107| |TJ|Operating Junction and|-55 to +175| |TSTG|Storage Temperature Range|°C| |poI|Soldering Temperature, for 10 sec.|300 (0.063 in. (1.6mm) from case)| |nsO|Mounting Torque, 6-32 or M3 Screw|O|10 lbf·in (1.1 N·m)| **----- End of picture text -----**<br> * Qualification standards can be found at http://www.irf.com/ Submit Datasheet Feedback October 10, 2014 1 www.irf.com © 2014 International Rectifier ~~16aR~~ AUIRGP/F66524D0 ~~[~~ ## **Thermal Resistance** |||**Parameter**||||**Typ.**<br>**Max. Units**||| |---|---|---|---|---|---|---|---|---| |RJC (IGBT)||Thermal Resistance Junction-to-Case(each IGBT) ||||–––<br>0.7||| |RJC(Diode)<br>RCS||Thermal Resistance Junction-to-Case(each Diode) <br>Thermal Resistance,Case-to-Sink(flat, greased surface)||||–––<br>1.1<br>0.24<br>–––<br>°C/W||| |RJA||Thermal Resistance,Junction-to-Ambient(typical socket mount)||||–––<br>40||| |**Electrical Characteristics@ TJ = 25°C(unless otherwise specified)**<br>**Parameter**<br>**Min.**<br>**Typ. **<br>**Max. Units**<br>**Conditions**<br>V(BR)CES<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE =0V, IC =100µA<br>V(BR)CES/TJTemperature Coeff. of Breakdown Voltage<br>—<br>0.21<br>—<br>V/°C VGE=0V,IC=20mA(25°C-175°C)<br>~~a~~<br>~~a~~||||||||| |||—<br>1.60<br>1.90|||IC =24A, VGE =15V, TJ =25°C|||| ||VCE(on)|Collector-to-Emitter Saturation Voltage<br>—<br>1.95<br>—||V|IC =24A, VGE =15V, TJ =150°C|||| |||—<br>2.0<br>—|||IC =24A, VGE =15V, TJ =175°C|||| ||VGE(th)|Gate Threshold Voltage<br>5.5<br>6.5<br>7.5||V|VCE= VGE,IC= 250µA|||| ||VGE(th)/TJ|Threshold Voltage temp. coefficient<br>—<br>-28<br>—||mV/°C V|mV/°C VCE=VGE,IC=1mA(25°C-175°C)|||| ||gfe|Forward Transconductance<br>—<br>21<br>—||S|VCE =50V, IC =24A, PW=20µs|||| |ICES<br>Collector-to-Emitter Leakage Current<br>—<br>1.1<br>50<br>µA<br>VGE =0V, VCE =600V<br>VFM<br>Diode Forward Voltage Drop<br>—<br>1.50<br>1.90<br>IF= 24A<br>—<br>1.40<br>—<br>IF= 24A,TJ= 175°C<br>IGES<br>Gate-to-Emitter Leakage Current<br>—<br>—<br>±100<br>nA<br>VGE= ±20V<br>V<br>~~OE~~<br>~~es~~<br>~~rs RD Os~~||||||||| ||**Switching Characteristics@ TJ = 25°C(unless otherwise specified)**|||||||| |||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**|**Max. Units**|**Max. Units**||**Conditions**||| ||Qg|Total Gate Charge (turn-on)<br>—<br>50<br>80||||IC= 24A||| ||Qge|Gate-to-Emitter Charge (turn-on)<br>—<br>16<br>24||nC||VGE= 15V||| ||Qgc|Gate-to-Collector Charge (turn-on)<br>—<br>26<br>39||||VCC= 400V||| ||Eon<br>Turn-On Switching Loss<br>—<br>915<br>1045<br>µJ<br>Eoff<br>Turn-Off Switching Loss<br>—<br>280<br>395<br>Etotal<br>TotalSwitchingLoss<br>—<br>11951440<br>td(on)<br>Turn-On delaytime<br>—<br>30<br>50<br>ns<br>tr<br>Rise time<br>—<br>25<br>45<br>td(off)<br>Turn-Off delaytime<br>—<br>75<br>95<br>tf<br>Fall time<br>—<br>25<br>45<br>~~————~~<br>~~————~~|||||IC= 24A, VCC= 400V, VGE= 15V<br>ns<br>RG= 10, L = 740µH, TJ= 25°C<br>Energy losses include tail & diode<br>reverse recovery||| ||Eon|Turn-On Switching Loss<br>—<br>1280<br>—||||||| ||Eoff|Turn-Off Switching Loss<br>—<br>550<br>—||µJ||||| ||Etotal|Total Switching Loss<br>—<br>1830<br>—||||IC= 24A, VCC= 400V, VGE= 15V||| ||td(on)|Turn-On delaytime<br>—<br>30<br>—||||RG= 10, L = 740µH, TJ= 175°C||| ||tr|Rise time<br>—<br>25<br>—||ns|ns|ns<br>Energy losses include tail & diode||| ||td(off)|Turn-Off delay time<br>—<br>100<br>—||||reverse recovery||| ||tf|Fall time<br>—<br>95<br>—||||||| ||Cies<br>Input Capacitance<br>—<br>1460<br>—<br>pF<br>VGE= 0V<br>Coes<br>Output Capacitance<br>—<br>120<br>—<br>VCC= 30V<br>Cres<br>Reverse Transfer Capacitance<br>—<br>50<br>—<br>f = 1.0Mhz<br>TJ= 175°C, IC= 96A<br>RBSOA<br>Reverse Bias Safe Operating Area<br>FULL SQUARE<br>VCC= 480V, Vp ≤ 600V<br>Rg=10, VGE = +20V to 0V<br>~~———~~<br>es ~~**e**ee~~<br>~~ae~~|||||||| ||SCSOA<br>Short Circuit Safe Operating Area<br>6<br>—<br>—<br>TJ= 150°C, VCC= 400V, Vp ≤600V<br>Rg=50, VGE = +15V to 0V<br>Erec<br>ReverseRecoveryEnergy oftheDiode<br>—<br>570<br>—<br>µJ<br>TJ= 175°C<br>trr<br>Diode Reverse Recovery Time<br>—<br>176<br>—<br>ns<br>VCC= 400V, IF= 24A<br>Irr<br>Peak Reverse RecoveryCurrent<br>—<br>19<br>—<br>A<br>VGE= 15V,Rg= 10,L = 740µH<br>µs<br>~~a————~~<br>~~es oe oe oe ee~~|||||||| ||**Notes:**|||||||| || VCC= 80% (V|= 80% (VCES), VGE= 20V, L = 740µH, RG= 10.<br>Refer to AN-1086 for guidelines for measuring V|Refer to AN-1086 for guidelines for measuring V|Refer to AN-1086 for guidelines for measuring V(BR)CESsafely.|||safely.|| ||Pulse width limited by max. junction temperature.<br>Ris measured at T|||is measured at TJapproximately 90°C.||||| 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 ~~OR~~ ~~TOR~~ AUIRGP/F66524D0 ~~a~~ **==> picture [429 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>For both:<br>60 Duty cycle : 50%<br>T_T TL<br>Tj = 175°C<br>Tsink = 100°C<br>50 OIE Gate drive as specified I<br>Power Dissipation = 114W<br>40 TT<br>30 Square Wave:VCC<br>gS<br>20 I<br>Diode as specified<br>10 i EE ST<br>rie CCIE Ie<br>ee<br>0<br>0.1 1 10<br>Load Current ( A )<br>**----- End of picture text -----**<br> **==> picture [214 x 671] intentionally omitted <==** **----- Start of picture text -----**<br> For both:<br>Duty cycle : 50%<br>Tj = 175°C<br>Tsink = 100°C<br>Gate drive as specified I<br>Power Dissipation = 114W<br>ST<br>Ie<br>10 100<br>250<br>200<br>fit tt<br>150 BNE<br>PL NEL<br>100<br>50 PTTL INE.<br>\<br>0 Pe} [ELEN]<br>25 50 75 100 125 150 175<br> TC (°C)<br>Fig. 3 - Power Dissipation vs.<br>Case Temperature<br>1000<br>10 0<br>10<br>1<br>10 100 1000<br>VCE (V)<br>Fig. 5 - Reverse Bias SOA<br>IC (A)<br>Ptot (W)<br>**----- End of picture text -----**<br> f , Frequency ( kHz ) **==> picture [381 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1 - Typical Load Current vs. Frequency<br>70 250<br>60 CCE LID<br>200<br>50 a<br>40 Nee 150<br>30 SaeNee PL<br>100<br>20<br>SeeeNe 50 PTTL<br>10 aan e<br>0 TE LELLLIN 0 Pe}<br>25 50 75 100 125 150 175 25 50 75<br> TC (°C)<br>IC (A)<br>Ptot (W)<br>**----- End of picture text -----**<br> **Fig. 2** - Maximum DC Collector Current vs. Case Temperature **==> picture [208 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10µsec<br>AR<br>10<br>100µsec<br>1 1msec<br>Tc = 25°C DC<br>Tj = 175°C<br>Single Pulse<br>0.1<br>1 10 100 1000 10000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br> **Fig. 4** - Forward SOA TC = 25°C, TJ @ 175°C; VGE =15V TJ = 175°C; VGE = 20V 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 ~~OR~~ AUIRGP/F66524D0 ~~a~~ ## ~~TOR~~ **==> picture [199 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 96<br>84 TET<br>72 RS VGE = 18V<br>VGE = 15V<br>VGE = 12V<br>60 VGE = 11V<br>VGE = 10V<br>I<br>48 VGE = 9.0V<br>36 peTH A<br>24 TES<br>12 aFS FEE<br>0<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 6** - - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs **==> picture [214 x 435] intentionally omitted <==** **----- Start of picture text -----**<br> 96<br>CET<br>84<br>VGE = 18V<br>72 VGE = 15V<br>VGE = 12V<br>VGE = 11V<br>60<br>VGE = 10V<br>VGE = 9.0V<br>48 He =<br>TH, =<br>36<br>TI<br>24<br>12 pee<br>0 Ast<br>0 2 4 6 8 10<br> VCE (V)<br>Fig. 8 - Typ. IGBT Output Characteristics<br>TJ = 175°C; tp = 20µs<br>10<br>8<br>ICE = 12A<br>ICE = 24A<br>6 | it ICE | = 48A<br>He ali -<br>42 ||r<br>0<br>5 10 15 20<br> VGE (V)<br>ICE (A)<br>VCE (V)<br>**----- End of picture text -----**<br> **==> picture [200 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 96<br>84 ECT<br>VGE = 18V<br>72 RRS VGE = 15V<br>VGE = 12V<br>VGE = 11V<br>60<br>VGE = 10V<br>VGE = 9.0V<br>48 ee =<br>36 naar=<br>24 avi<br>12 FSS<br>0 ———=—<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 7** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs **==> picture [196 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 96<br>84 TJ = -40°C<br>TJ = 25°C<br>72<br>TJ =175°C<br>60<br>op) RYO<br>48 aan<br>36 ae oe<br>24<br>12 ff<br>a> A<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br> **==> picture [214 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9 - Typ. Diode Forward Characteristics<br>tp = 20µs<br>10<br>8 ICE = 12A<br>ICE = 24A<br>ICE = 48A<br>Ee<br>6<br>4 oleigi<br>2 |<br>0 |ft<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 10** - Typical VCE vs. VGE TJ = -40°C 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 October 10, 2014 ~~=~~ **Fig. 11** - Typical VCE vs. VGE TJ = 25°C Submit Datasheet Feedback October 10, 2014 October 10, 2014 AUIRGP/F66524D0 ~~7~~ ## ~~ir~~ **==> picture [211 x 664] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8 mail ICE = 12A<br>ICE = 24A<br>ICE = 48A<br>6 | be -<br>lian<br>4<br>2<br>0 | [ff<br>5 10 15 20<br> VGE (V)<br>Fig. 12 - Typical VCE vs. VGE<br>TJ = 175°C<br>4000<br>3000<br>EON<br>2000<br>1000<br>EOFF<br>Z<br>0<br>0 10 20 30 40 50<br>ICE (A)<br>Fig. 14 - Typ. Energy Loss vs. ICC<br> = 175°C; L = 740µH; VCE = 400V, RG = 10; VGECE = 400V, RG = 10; VGE= 400V, RG = 10; VGEG = 10; VGE = 10; VGE; VGE; VGEGE = 15V<br>2500<br>2000 E ON<br>1500<br>EOFF<br>1000<br>500<br>0<br>0 20 40 60 80 100<br>RG ()<br>VCE (V)<br>Energy (µJ)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig. 14** - Typ. Energy Loss vs. ICC TJ = 175°C; L = 740µH; VCE = 400V, RG = 10; VGECE = 400V, RG = 10; VGE= 400V, RG = 10; VGEG = 10; VGE = 10; VGE; VGE; VGEGE = 15V **Fig. 16** - Typ. Energy Loss vs. RG TJ = 175°C; L = 740µH; VCE = 400V, ICE = 24A; VGE = 15V **==> picture [261 x 658] intentionally omitted <==** **----- Start of picture text -----**<br> 96<br>84<br>COCO<br>72<br>60 CCC<br>CECE<br>48<br>CEE EA<br>36 CECE<br>TJ = 25°C<br>24 TJ = 175°C<br>12<br>0 CCEA<br>4 5 6 7 8 9 10 11 12 13 14<br> VGE, Gate-to-Emitter Voltage (V)<br>Fig. 13 - Typ. Transfer Characteristics<br>VCE = 50V; tp = 20µs<br>1000<br>td OFF<br>100<br>tF<br>tdON<br>tR<br>10<br>paras<br>ATE<br>1<br>0 10 20 30 40 50<br>ICE (A)<br>Fig. 15 - Typ. Switching Time vs. IC<br>TJ = 175°C; L = 740µH; VCE = 400V, RG = 10; VGE = 15V<br>1000<br>td OFF<br>er<br>100<br>zeae tF<br>tdON<br>tR<br>PAT<br>10<br>0 20 40 60 80 100<br>RG ()<br>IC, Collector-to-Emitter Current (A)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **Fig. 17** - Typ. Switching Time vs. RG TJ = 175°C; L = 740µH; VCE = 400V, ICE = 24A; VGE = 15V 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 ~~OR~~ **==> picture [542 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> AUIRGP/F66524D0<br>TOR<br>24 20<br>22<br>RG = 10<br>18<br>20<br>RG = 22<br>18<br>16<br>16 R G = 47<br>14<br>RG = 100 14<br>12<br>10 12<br>10 20 30 40 50 0 20 40 60 80 100<br>IF (A) <br>IRR (A) IRR (A)<br>**----- End of picture text -----**<br> **==> picture [202 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18<br>16<br>14<br>12<br>0 20 40 60 80 100<br>RG (<br>IRR (A)<br>**----- End of picture text -----**<br> **Fig. 19** - Typ. Diode IRR vs. RG TJ = 175°C **Fig. 18** - Typ. Diode IRR vs. IF TJ = 175°C **==> picture [510 x 436] intentionally omitted <==** **----- Start of picture text -----**<br> 22 4000<br>20 3500 48A<br>18 et | | 3000 aS <br>24A<br>ava ‘\eee<br>16 2500<br><br>14 A 2000 <br>12 Panme ee 1500 SNe 12A<br>7 | | | | ar |<br>10 Seer 1000 CEPT<br>200 300 400 500 600 700 0 200 400 600 800 1000 1200<br>diF /dt (A/µs) diF /dt (A/µs)<br>Fig. 20 - Typ. Diode IRR vs. diF/dt Fig. 21 - Typ. Diode QRR vs. diF/dt<br>VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C<br>1000 21 210<br>RG =G == 10<br>18 180<br>800 ae R G = 22 ptt Tscsc i | tt<br>15 150<br>RG = 47G = 47= 47 47 12 120<br>pz ONE I<br>600 sc<br>ava RG =G == 100 9 EeaVAne 90<br>6 60<br>400<br>Bat} 3 bate 30<br>200 4a 0 CEE 0<br>10 20 30 40 50 60 9 10 11 12 13 14 15 16<br>IF (A) VGE (V)<br>IRR (A)<br>ERR (µJ) Time (µs)<br>QRR (µC)<br>Current (A)<br>**----- End of picture text -----**<br> **==> picture [471 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 21<br>RG =G == 10<br>18<br>800 ae R G = 22 ptt Tscsc i | tt<br>15<br>RG = 47G = 47= 47 47 12<br>pz ONE I<br>600 sc<br>ava RG =G == 100 9 EeaVAne<br>6<br>400<br>Bat} 3 bate<br>200 4a 0 CEE<br>10 20 30 40 50 60 9 10 11 12 13 14 15<br>IF (A) VGE (V)<br>Fig. 22 - Typ. Diode ERR vs. IF Fig. 23 - VGEGE vs. Short Circuit Time<br>TJ = 175°C VCC = 400V; TC = 150°C<br>ERR (µJ) Time (µs)<br>**----- End of picture text -----**<br> **Fig. 23** - VGEGE vs. Short Circuit Time 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 ~~a~~ AUIRGP/F66524D0 ~~LT~~ **==> picture [57 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> LR<br>**----- End of picture text -----**<br> **==> picture [491 x 685] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 16<br>14 V CES = 400V<br>VCES = 300V<br>Cies<br>12<br>—— | | Y |<br>1000<br>a<br>10<br>aa<br>8<br>pty}<br>Coes 6<br>100<br>4<br>Ar laa<br>Cres<br>K | tt<br>2<br>SR EEE Poe<br>10 0<br>0 100 200 300 400 500 0 10 20 30 40 50 60<br>VCE (V) Q G, Total Gate Charge (nC)<br>Fig. 24 - Typ. Capacitance vs. VCE Fig. 25 - Typical Gate Charge vs. VGE<br> VGE= 0V; f = 1MHz ICE = 24A; L= 485µH<br>1<br>TTT D = 0.50 Cn nnooo<br>0.20<br>0.1 Chi raeeeemer<br>0.10<br>arene: ME |<br>Hl eal cage Coo<br>0.05<br>0.02 R 1 R1 R 2 R2 R 3 R3 R 4 R4 Ri (°C/W) I (sec)<br>0.01 yy 0.01 HET I eee J J1 1 2 2 3 3 4 4 C C 0.01805 0.17293 0.29774 0.000012 0.000101 0.002832<br>SINGLE PULSE Ci= iRi<br>0.001 4 ( THERMAL RESPONSE ) Ci= iRi a 0.21353 0.018393<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>BUC Bt<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>1<br>D = 0.50<br>0.20 ea Ri (°C/W) I (sec)<br>0.1 ro 0.10 R 1R1 R 2R2 R 3R3 R 4R4 —_— 0.03622 0.000036<br>0.05 J J C C 0.36378 0.000213<br>0.02 1 1 2 2 3 3 4 4 0.45197 0.003117<br>0.01 0.01 Ci Ci = = i Ri iRi 0.24882 0.019088<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>at ( THERMAL RESPONSE ) Ee<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 Ml eat<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Capacitance (pF)<br>VGE, Gate-to-Emitter Voltage (V)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig 27.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Submit Datasheet Feedback October 10, 2014 www.irf.com © 2014 International Rectifier 7 **==> picture [534 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> AUIRGP/F66524D0<br>L<br>L<br>DUT VCC 80 V +<br>0<br>1K - DUT VCC<br>Rg<br>“i EF<br>Gate Charge Circuit RBSOA Circuit<br>Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit<br>diode clamp /<br>DUT<br>L<br>4X<br>DC VCC -5V<br>DUT / VCC<br>DUT DRIVER<br>Rg<br>RSH<br>**----- End of picture text -----**<br> **==> picture [197 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> diode clamp /<br>DUT<br>L<br>-5V<br>DUT / VCC<br>DRIVER<br>Rg<br>Switching Loss<br>**----- End of picture text -----**<br> **Fig.C.T.3** - S.C. SOA Circuit **Fig.C.T.4** - Switching Loss Circuit C force **==> picture [451 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> R = [VCC]<br>ICM<br>100K<br>D1 22K<br>C sense<br>VCC<br>DUT DUT<br>G force 0.0075µF<br>Rg<br>E sense<br>ib<br>E force<br>**----- End of picture text -----**<br> **Fig.C.T.6** - BVCES Filter Circuit **Fig.C.T.5** - Resistive Load Circuit Submit Datasheet Feedback October 10, 2014 8 www.irf.com © 2014 International Rectifier AUIRGP/F66524D0 ## ~~T@R~~ **==> picture [224 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 600 60<br>tf<br>500 50<br>400 40<br>90% ICECE<br>300 30<br>io<br>200 20<br>oe<br>100 i 10<br>5% VCECE 10% ICECE<br>0 0<br>Eoff Loss<br>-100 -10<br>-4 -2 0 2 4 6<br>time(µs)<br> (V)VCECE (A)ICECE<br>VCECE ICECE<br>**----- End of picture text -----**<br> **==> picture [507 x 587] intentionally omitted <==** **----- Start of picture text -----**<br> 600 60<br>tf<br>tr<br>500 50<br>500 50<br>TEST<br>CURRENT<br>400 40<br>400 40<br>90% ICECE<br>300 30<br>300 30<br>io nn 90% ICE van<br>200 20<br>200 20<br>oe —\S—<br>100 i 10 A<br>100 10<br>5% VCECE 10% ICECE 10% ICE 5% VCE<br>0 0<br>0 0<br>Eoff Loss Eon Loss<br>-100 -10 te<br>-100 -10<br>-4 -2 0 2 4 6<br>-4 -2 0 2 4 6<br>time(µs)<br>time (µs)<br>Fig. WF2 - Typ. Turn-on Loss Waveform<br>Fig. WF1 - Typ. Turn-off Loss Waveform<br>@ TJ = 175°C using Fig. CT.4<br>@ TJ = 175°C using Fig. CT.4<br>500 250<br>40 VCE<br>400 200<br>30 QRR<br>300 150<br>20<br>ICE<br>tRR<br>fo)<br>200 100<br>yp py<br>10<br>0 100 50<br>ye ef |<br>Peak<br>-10<br>IRR 0 0<br>-20<br>H k<br>-100 -50<br>-4 0 4 8<br>oe<br>-30<br>-0.50 -0.30 -0.10 0.10 0.30 0.50 Time (µs)<br> (V)VCECE (A)ICECE (V)VCE (A)ICE<br>Vce (V) Ice (A)<br> (A)<br>IF<br>**----- End of picture text -----**<br> _time (µs)_ **Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 **Fig. WF4** - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 ~~=°°.~~ AUIRGP/F66524D0 ~~LT~~ ## ~~Li@R~~ ## TO-247AC Package Outline Dimensions are shown in millimeters (inches) ## TO-247AC Part Marking Information **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUGP66524D0<br>Date Code<br>IR Logo I ¢aR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>Ld<br>Lot Code<br>**----- End of picture text -----**<br> TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 ~~z=°°~~ AUIRGP/F66524D0 ~~LT~~ ## ~~Li@R~~ ## TO-247AD Package Outline Dimensions are shown in millimeters (inches) ## TO-247AD Part Marking Information **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUGF66524D0<br>Date Code<br>IR Logo I ¢aR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>——<br>Lot Code<br>**----- End of picture text -----**<br> TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 ~~z=°°~~ ~~TOR~~ AUIRGP/F66524D0 ~~lll~~ ## **Qualification Information[† ]** |**Qualification Information[† ]**|**Qualification Information[† ]**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)†|| |||This part number(s) passed Automotive qualification. IR’s Industrial and<br>Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||TO-247AC|N/A| |||TO-247AD|| |**ESD**|Human Body Model|Class H1C(+/- 2000)††<br>AEC-Q101-001|| ||Charged Device Model|Class C5 (+/- 1000)††<br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ - †† Highest passing voltage. 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 ~~OR~~ ~~TOR~~ AUIRGP/F66524D0 ~~a~~ ## **IMPORTANT NOTICE** Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ ## **WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 ~~OR~~
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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