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AUIRGDC0250
IGBT, 141 A, 1.47 V, 543 W, 1.2 kV, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- Available until stocks are exhausted
- MSL: -
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 543W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 150°C
- Continuous Collector Current: 141A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.47V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.9 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**AUTOMOTIVE GRADE** AUIRGDC0250 ## **Features** - Low VCE (on) Planar IGBT Technology - Low Switching Losses - Square RBSOA - 100% of the Parts Tested for ILM - Positive VCE (on) Temperature Coefficient - Reflow Capable per JDSD22-A113 - Lead-Free, RoHS Compliant - Automotive Qualified * ## **Benefits** - Device optimized for soft switching applications - High Efficiency due to Low VCE(on), low switching losses - Rugged transient performance for increased reliability - Excellent current sharing in parallel operation - Low EMI ## **Application** PTC Heater Relay Replacement **==> picture [220 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>VCES = 1200V<br>G IC = 81A @ TC = 100°C<br>E VCE(on) typ. = 1.47V @ 33A<br>n-channel<br>_<br>Super-TO-220<br>AUIRGDC0250<br>G C E<br>Gate Collector Emitter<br>**----- End of picture text -----**<br> **Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity** ~~OE~~ AUIRGDC0250 Super-TO-220 Tube 50 AUIRGDC0250 **Absolute Maximum Ratings** Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. ||**Parameter**|**Max.**|**Max.**|||**Units**|**Units**| |---|---|---|---|---|---|---|---| |VCES|Collector-to-Emitter Voltage|1200||||V|| |IC @TC= 25°C|Continuous Collector Current|141|||||| |IC @TC= 100°C Continuous Collector Current|= 100°C Continuous Collector Current||81||||| |ICM|Pulse Collector Current,VGE= 15V||99|||A|| |ILM|Clamped Inductive Load Current,VGE= 20V||99||||| |VGE|Continuous Gate-to-Emitter Voltage<br>Transient Gate-to-Emitter Voltage||±20<br>±30|||V|| |PD @TC= 25°CMaximum Power Dissipation<br>PD @TC= 100°C Maximum Power Dissipation|||543<br>217|||W|W| |TJ|Operating Junction and|-55 to +150||-55 to +150|||| |TSTG|Storage Temperature Range|||||°C|| ||Soldering Temperature, for 10 sec. (Through Hole Mounting)|Soldering Temperature, for 10 sec. (Through Hole Mounting)<br>300 (0.063 in. (1.6mm) from case)||300 (0.063 in. (1.6mm) from case)|||| |**Thermal Resistance**|||||||| |**Parameter**<br>**Typ.**<br>**Max. Units**<br>RJC (IGBT)<br>Thermal Resistance Junction-to-Case(each IGBT) <br>–––<br>0.23<br>°C/W<br>RCS<br>Thermal Resistance,Case-to-Sink(flat, greased surface)<br>0.50<br>–––<br>RJA<br>Thermal Resistance,Junction-to-Ambient(typical socket mount)<br>–––<br>62<br>~~SS~~|||||||| |V 2.6<br>2019-04-18<br>1<br>* Qualification standards can be found atwww.infineon.com<br>~~—~~|||||||| ~~Cinfineon~~ AUIRGDC0250 ~~[_~~ |<br>~~Cinfineon~~||AUIRGDC0250<br>~~[_~~| |---|---|---| |**Electrical Characteristics@ TJ = 25°C(unless otherwise specified)**||| |**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**<br>V(BR)CES<br>Collector-to-Emitter Breakdown Voltage<br>1200<br>—<br>—<br>V<br>VGE= 0V, IC= 250µA<br>V(BR)CES/TJTemperature Coeff. of Breakdown Voltage<br>—<br>1.2<br>—<br>V/°C VGE= 0V, IC= 1mA(25°C-150°C)<br>~~a ee~~<br>~~es es es ee~~<br>~~ee~~<br>~~**n**n~~<br>~~**I**ID ~~~~**I**t ~~~~**I**~~<br>~~es~~<br>~~D~~||| |VCE(on)<br>Collector-to-Emitter Saturation Voltage<br>—<br>1.47||1.8<br>V<br>IC= 33A,VGE= 15V,TJ= 25°C| |—<br>1.56||—<br>IC=33A,VGE= 15V,TJ= 150°C| |VGE(th)<br>Gate Threshold Voltage<br>3.0<br>—<br>6.0<br>V<br>VCE= VGE,IC= 250µA<br>VGE(th)/TJ Threshold Voltage temp. coefficient<br>—<br>-15<br>—<br>mV/°C VCE= VGE,IC= 250µA(25°C-150°C)<br>~~a~~<br>~~SD I I (OO~~<br>~~esGs~~<br>~~(OO~~||| |gfe<br>Forward Transconductance<br>—<br>30||—<br>S<br>VCE= 50V, IC= 33A,PW = 20µS| |ICES<br>Collector-to-Emitter Leakage Current<br>—<br>—<br>250<br>µA VGE= 0V, VCE= 1200V, TJ= 25°C<br>—<br>—<br>1000<br>VGE= 0V, VCE= 1200V,TJ= 150°C<br>IGES<br>Gate-to-Emitter Leakage Current<br>—<br>—<br>±100<br>nA<br>VGE= ±20V<br>~~Sf~~<br>~~ee LR~~<br>~~a~~<br>~~ee ee ee ee~~||| |**Switching Characteristics@ TJ = 25°C(unless otherwise specified)**||| |**Parameter**<br>**Min.**<br>**Typ.**<br>Qg<br>TotalGate Charge (turn-on)<br>—<br>151<br>Qge<br>Gate-to-EmitterCharge (turn-on)<br>—<br>26<br>Qgc<br>Gate-to-CollectorCharge (turn-on)<br>—<br>62<br>Eoff<br>Turn-Off SwitchingLoss<br>—<br>15<br>td(off)<br>Turn-Off delay time<br>—<br>485<br>~~=~~<br>~~ee~~||**Max. Units**<br>**Conditions**<br>227<br>nC<br>IC= 33A<br>39<br>VGE= 15V<br>93<br>VCC=600V<br>16<br>mJ IC= 33A, VCC= 600V, VGE= 15V<br>616<br>ns<br>RG= 5, L = 400µH, TJ= 25°C<br>~~ee~~| |tf<br>Fall time<br>—<br>1193 1371|1193 1371|1193 1371<br>Energy losses include tail| |Eoff<br>Turn-Off SwitchingLoss<br>—<br>29<br>—<br>mJ IC= 33A, VCC= 600V, VGE= 15V<br>td(off)<br>Turn-Off delaytime<br>—<br>689<br>—<br>ns<br>RG= 5, L = 400µH, TJ= 150°C<br>tf<br>Fall time<br>—<br>2462<br>—<br>Energylosses include tail<br>Cies<br>Input Capacitance<br>—<br>3804<br>—<br>VGE= 0V<br>Coes<br>Output Capacitance<br>—<br>161<br>—<br>VCC= 30V<br>pF<br>~~Pe~~<br>~~re~~<br>~~ee~~||| |Cres<br>Reverse Transfer Capacitance<br>—<br>31||—<br>f = 1.0Mhz| |||TJ= 150°C, IC= 99A| |RBSOA<br>Reverse Bias Safe Operating Area<br>FULL SQUARE<br>VCC= 960V, Vp ≤ 1200V||| |||Rg=5, VGE = +20V to 0V| ## **Notes:** - VCC = 80% (VCES), VGE = 20V, L = 400µH, RG = 5. - Pulse width limited by max. junction temperature. - R is measured at TJ approximately 90°C. - Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. - Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 V 2.6 2019-04-18 AUIRGDC0250 ~~[_~~ ## ~~Cinfineon~~ **==> picture [208 x 696] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>140<br>| tf ft ff<br>120<br>=<br>100<br>80<br>60<br>40<br>Pf tf | UN<br>20<br>0 SSS<br>25 50 75 100 125 150<br> TC (°C)<br>Fig. 1 - Maximum DC Collector Current vs.<br>Case Temperature<br>1000<br>100<br>EeEereEe 10µsec<br>10<br>100µsec<br>PSS]<br>1msec<br>1 Pa RSS<br>DC<br>0.1 Tc = 25°C<br>Tj = 150°C<br>Single Pulse<br>=<br>0.01 Sti ii<br>1 10 100 1000 10000<br>VCE (V)<br>Fig. 3 - Forward SOA<br>TC = 25°C, TJ 150°C; VGE =15V<br>1000<br>100<br>10<br>1<br>10 100 1000 10000<br>VCE (V)<br>Fig. 5 - Reverse Bias SOA<br> TJ = 150°C; VGE = 20V<br>IC (A)<br>IC (A)<br>IC (A)<br>**----- End of picture text -----**<br> **==> picture [205 x 671] intentionally omitted <==** **----- Start of picture text -----**<br> 600500 RK] of<br>fof<br>400 NCTE TTS<br>300<br>200<br>TTENE<br>100<br>EEX<br>0<br>25 50 75 100 125 150<br> TC (°C)<br>Fig. 2 - Power Dissipation vs.<br> Case Temperature<br>5.0<br>IC = 1mA<br>4.5 NOE |<br>Pe<br>4.0<br>—<br>3.5<br>EEN<br>3.0 efitde<br>25 50 75 100 125 150<br>TJ , Temperature (°C)<br>Fig. 4 - Typical Gate Threshold Voltage<br>(Normalized) vs. Junction Temperature<br>100<br>VGE = 18V<br>VGE = 15V<br>80 VGE = 12V<br>VGE = 10V<br>VGE = 9.0V<br>VGE = 8.0V<br>60<br>VGE = 7.0V<br>fe<br>40<br>nay<br>20 TTA<br>0 fA| |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>VGE(th), Gate Threshold Voltage (Normalized)<br>Ptot (W)<br>**----- End of picture text -----**<br> **Fig. 4** - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature **Fig. 6** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs 3 V 2.6 2019-04-18 AUIRGDC0250 ~~LL~~ ## ~~Cinfineon~~ **==> picture [197 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGE = 18V<br>VGE = 15V<br>80 VGE = 12V<br>VGE = 10V<br>VGE = 9.0V<br>VGE = 8.0V<br>60<br>ae VGE = 7.0V<br>40 fly<br>20 AAA<br>0 HY 4 tt<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 7** - Typ. IGBT Output Characteristics TJ = 25°C; tp =20µs **==> picture [196 x 460] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>ti<br>6<br>5 PLP I CE = 17A<br>ICE = 33A<br>4 ICE = 66A<br>3 Pn e ae<br>|<br>21 | WheFeEE<br>ee<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE<br>TJ = -40°C<br>8<br>7<br>2<br>6<br>5 Sila I CE = 17A<br>ICE = 33A<br>4 Te ICE = 66A<br>3<br>2<br>1 ——<br>a<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 11 - Typical VCE vs. VGE<br>TJ = 150°C<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **==> picture [196 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGE = 18V<br>VGE = 15V<br>80 VGE = 12V<br>VGE = 10V<br>VGE = 9.0V<br>VGE = 8.0V<br>60<br>VGE = 7.0V<br>Yl<br>40 Aw<br>20 ,a.28<br>0<br>FEL ft<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 8** - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20µs **==> picture [206 x 438] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>thi<br>6 TT<br>5 me I CE = 17A<br>ICE = 33A<br>4 ICE = 66A<br>3 meeeee<br>2 a<br>1 ——<br>0 ee<br>5 10 15 20<br> VGE (V)<br>Fig. 10 - Typical VCE vs. VGE<br>TJ = 25°C<br>100<br>80<br>Bannan<br>a // | |<br>60 T J = 25°C<br>TJ = 150°C<br>40<br>20<br>Sap/eun<br>EeZanEe<br>0<br>4 5 6 7 8 9 10 11<br> VGE (V)<br>ICE (A)<br>VCE (V)<br>**----- End of picture text -----**<br> **==> picture [175 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 12 - Typ. Transfer Characteristics<br>VCE = 50V; tp = 20µs<br>**----- End of picture text -----**<br> 4 V 2.6 2019-04-18 AUIRGDC0250 **==> picture [198 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35<br>EOFF<br>30<br>25<br>20<br>15<br>10<br>0 10 20 30 40 50 60 70<br>IC (A)<br>Energy (mJ)<br>**----- End of picture text -----**<br> **Fig. 13** - Typ. Energy Loss vs. IC TJ = 150°C; L = 400µH; VCE = 600V, RG = 5; VGE = 15V **==> picture [203 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 32<br>30<br>EOFF<br>28<br>26<br>24<br>0 20 40 60 80 100<br>Energy (mJ)<br>**----- End of picture text -----**<br> **==> picture [25 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Rg ( )<br>**----- End of picture text -----**<br> **Fig. 15** - Typ. Energy Loss vs. RG TJ = 150°C; L = 400µH; VCE = 600V, ICE = 33A; VGE = 15V **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Cies<br>1000<br>100<br>Coes<br>10 Cres<br>NOEEL EE<br>1<br>0 100 200 300 400 500 600<br>VCE (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig. 17** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz **==> picture [199 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>tF<br>1000<br>tdOFF<br>100<br>0 20 40 60 80<br>IC (A)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **Fig. 14** - Typ. Switching Time vs. IC TJ = 150°C; L = 400µH; VCE = 600V, RG = 5; VGE = 15V **==> picture [204 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>t F<br>1000<br>tdOFF<br>100<br>0 20 40 60 80 100<br>RG ()<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **Fig. 16** - Typ. Energy Loss vs. RG TJ = 150°C; L = 400µH; VCE = 600V, ICE = 33A; VGE = 15V **==> picture [198 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14 VCES = 600V<br>VCES = 400V<br>12<br>10<br>8<br>6<br>4<br>2<br>0 Por<br>0 20 40 60 80 100 120 140 160<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br> **Fig. 18** - Typical Gate Charge vs. VGE ICE = 33A; L = 2.0mH 5 V 2.6 2019-04-18 ~~Cinfineon~~ AUIRGDC0250 ~~[~~ **==> picture [399 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1 D = 0.50<br>=e 0.20 Sli==>- aan Siti eel<br>0.10 Ri (°C/W) I (sec)<br>TT pT<br>0.01 0.05 0.02 R1 R1 R2 R2 R3 R3 R 4 R4 0.0015 0.000003<br>er 0.01 Ep J oo J CC 0.0365 0.000118<br>1 1 2 2 3 3 4 4 0.1356 0.001438<br>0.001 ape SINGLE PULSE( THERMAL RESPONSE ) CiCi= = Dopo) iRiiRi FF] 0.0554 0.006412<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>ail |<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig 19.** Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 6 V 2.6 2019-04-18 AUIRGDC0250 ~~[_~~ ## ~~Cinfin eon~~ **==> picture [487 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>L 80 V +<br>DUT VCC - DUT VCC<br>0<br>1K Rg<br>RBSOA Circuit<br>Gate Charge Circuit<br>**----- End of picture text -----**<br> **Fig.C.T.1** - Gate Charge Circuit (turn-off) **Fig.C.T.2** - RBSOA Circuit **==> picture [159 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> diode clamp /<br>DUT<br>L<br>DUT / VCC<br>DRIVER<br>Rg<br>Switching Loss<br>**----- End of picture text -----**<br> **Fig.C.T.3** - Switching Loss Circuit **==> picture [153 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 700 70<br>tf<br>600 60<br>500 SPE 50<br>400 ee 40<br>90% ICE<br>300 Py 30<br>200 Poy 20<br>5% VCE<br>100 10<br>10% ICE<br>0 0<br>NR Eoff Loss<br>-100 -10<br>-2 0 2 4 6<br>time(µs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br> **Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3 7 V 2.6 ~~Cinfineon~~ AUIRGDC0250 ~~[~~ ## Super-TO-220 Package Outline Dimensions are shown in millimeters (inches) ## Super-TO-220 Part Marking Information 8 V 2.6 2019-04-18 AUIRGDC0250 ~~Cinfineon [_~~ **Qualification Information** Automotive (per AEC-Q101) **Qualification Level** Comments: This part number (s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. **Moisture Sensitivity Level** 3L– Super TO-220 MSL1 Class M4[†] (+/- 800V) Machine Model AEC-Q101-002 Class H3A[†] (+/- 6000V) **ESD** Human Body Model AEC-Q101-001 Class C5[†] (+/- 2000V) Charged Device Model AEC-Q101-005 **RoHS Compliant** Yes ~~————~~ † Highest passing voltage. **Revision History** |**Revision**|**Date**|**Subjects(major changes since last revision)**|**Subjects(major changes since last revision)**| |---|---|---|---| |2.0|9/2/2014||Final Datasheet| |2.1|12/1/2014||Updated with V(BR)CESand VGE(th) conditions| |2.2|3/2/2015||Updated with minor changes| |2.3|8/31/2017||Updated with Infineon logo| |2.4|03/01/2018||Updated withqualification level| |2.5|11/06/2018||Updated maximum VCE(on)| |2.6|4/18/2019||Updated typical Vce(on) value @ 150°C| 9 V 2.6 2019-04-18 ~~Cinfineon~~ AUIRGDC0250 ~~[_~~ ## **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2018 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 V 2.6 2019-04-18
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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