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AUIRG4PH50S
IGBT, 57 A, 1.75 V, 217 W, 1.2 kV, TO-247AC, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:57A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:217W; Collector Emitter Voltage V(br)ceo:1.2kV; Transi; Available until stocks are exhausted
- MSL: -
- SVHC: No SVHC (23-Jan-2024)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 217W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 57A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.67 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**AUTOMOTIVE GRADE**
- • Features
- Standard: Optimized for minimum saturation
- voltage and low operating frequencies (< 1kHz)
- Generation 4 IGBT design provides tighter
- parameter distribution and higher efficiency
- Industry standard TO-247AC package
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C<br>VCES = 1200V<br>IC = 81A@ TC = 100°C<br>G<br>VCE(on) typ. = 1.47V@ 33A<br>® E<br>n-channel<br>**----- End of picture text -----**<br>
- Lead-Free
- Automotive Qualified *
- Generation 4 IGBT's offer highest efficiency available
- IGBT's optimized for specified application conditions
TO-247AC
|**G**|**C**|**E**|
|---|---|---|
|Gate|Collector|Emitter|
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRG4PH50S|TO-247AC|Tube|25|AUIRG4PH50S|
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified.
|~~nO~~|**Parameter**<br>~~nO~~|**Max.**<br>~~nO~~|**Units**<br>~~nO~~|
|---|---|---|---|
|VCES<br>~~eG~~<br>~~ee~~|Collector-to-Emitter Voltage<br>~~eG~~|1200<br>~~eG~~|V<br>~~eG~~|
|IC@ TC= 25°C<br>~~eG~~<br>~~ee~~|Continuous Collector Current<br>~~eG~~|141<br>~~eG~~|A<br>~~eG~~|
|IC @TC= 100°C<br>~~ee~~<br>~~GG~~|ContinuousCollectorCurrent<br>~~GG~~|81<br>~~GG~~||
|ICM<br>~~I~~|Pulse Collector Current,VGE= 15V<br>~~I~~|99<br>~~I~~||
|ILM<br>~~©~~|Clamped Inductive Load Current,VGE= 20V<br>~~©~~|99<br>~~©~~||
|VGE|Continuous Gate-to-Emitter Voltage|±20<br>~~pO~~|V|
||Transient Gate-to-Emitter Voltage|±30<br>~~Po~~||
|PD @TC= 25°C<br>~~GG~~|Emitter Voltage<br>Maximum Power Dissipation<br>~~GG~~|543<br>~~GG~~|W<br>~~eee~~|
|PD@ TC= 100°C<br>~~ee~~|Maximum Power Dissipation<br>~~ee~~|217<br>~~eee~~||
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55 to +150<br>~~eee~~|°C<br>~~eee~~|
|~~ee~~<br>~~Ss~~|Soldering Temperature, for 10 sec. (1.6mm from case)<br>~~ee~~|300<br>~~eee~~||
|~~ee~~<br>~~Ss~~|Soldering Temperature, for 10 sec. (1.6mm from case)<br>Mounting Torque, 6-32 or M3 Screw<br>~~ee ~~|10 lbf·in (1.1N·m)<br> ~~eee~~|~~eee~~|
***** Qualification standards can be found at http://www.irf.com/
## **�����������**
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units **|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-to-Emitter Breakdown Voltage|1200|—|—|V|VGE= 0V,IC= 250μA�|
|ΔV(BR)CES/ΔTJ|Temperature Coeff. of Breakdown Voltage|—|1.2|—|V/°C|VGE= 0V,IC= 1mA(25°C-150°C)�|
|VCE(on)|Collector-to-Emitter Saturation Voltage|—|1.47|1.7|V|IC= 33A,VGE= 15V,TJ= 25°C|
|||—|1.55|—||IC= 33A,VGE= 15V,TJ= 150°C|
|VGE(th)|Gate Threshold Voltage|3.0|—|6.0|V|VCE= VGE,IC= 250μA|
|ΔVGE(th)/ΔTJ|Threshold Voltage temp. coefficient|—|-11|—|mV/°C|VCE= VGE,IC= 250μA(25°C - 150°C)|
|gfe|Forward Transconductance|—|30|—|S|VCE= 50V,IC= 33A,PW = 20μs|
|ICES|Collector-to-Emitter Leakage Current|—|—|250|μA|VGE= 0V,VCE= 1200V,TJ= 25°C|
|||—|—|1000||VGE= 0V,VCE= 1200V,TJ= 150°C|
|IGES|Gate-to-Emitter Leakage Current|—|—|±100|nA|VGE= ±20V|
## **Switching Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge(turn-on)|—|151|227|nC|IC= 33A<br>VGE= 15V<br>VCC= 600V|
|Qge|Gate-to-Emitter Charge(turn-on)|—|26|39|||
|Qgc|Gate-to-Collector Charge(turn-on)|—|62|93|||
|Eoff|Turn-Off Switching Loss|—|15|16|mJ|IC= 33A, VCC= 600V, VGE= 15V<br>RG= 5Ω, L = 400μH, TJ= 25°C<br>Energylosses include tail|
|td(off)|Turn-Off delaytime|—|485|616|ns|IC= 33A, VCC= 600V, VGE= 15V<br>RG= 5Ω,L = 400μH,TJ= 25°C|
|tf|Fall time|—|1193|1371|||
|Eoff|Turn-Off Switching Loss|—|29|—|<br>mJ|IC= 33A, VCC= 600V, VGE= 15V<br>RG= 5Ω, L = 400μH, TJ= 150°C<br>Energylosses include tail|
|td(off)|Turn-Off delaytime|—|689|—|ns|IC= 33A, VCC= 600V, VGE= 15V<br>RG= 5Ω,L = 400μH,TJ= 150°C|
|tf|Fall time|—|2462|—|||
|Cies|Input Capacitance|—|3804|—|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz|
|Coes|Output Capacitance|—|161|—|||
|Cres|Reverse Transfer Capacitance|—|31|—|||
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 150°C, IC= 99A<br>VCC�������������������<br>Rg= 5Ω,VGE= +20V to 0V|
## **Notes:**
- VCC = 80% (VCES), VGE = 20V, L = 400μH, RG = 50 Ω.
- Pulse width limited by max. junction temperature.
- Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
- R θ is measured at TJ of approximately 90°C.
- Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
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## **Qualification Information[†]**
|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)<br>††||
|||(per AECQ101)<br>This part number(s) passed Automotive qualification.<br>IR’s Industrial and<br>Consumer qualification level is granted by extension of the higher Automotive<br>level.||
|**Moisture Sensitivity Level**||TO-247AC|N/A|
|**ESD**|Machine Model|Class M3<br>AEC-Q101-002||
||Human Body Model|Class H2<br>AEC-Q101-001||
||Charged Device Model|Class C4<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
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160<br>140<br>TT Ty yt<br>120<br>PNET<br>100<br>Pot KL<br>80 rt INL<br>PNT<br>60<br>40<br>200 Poyee-} f pA<br>25 50 75 100 125 150<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>
**Fig. 1** - Maximum DC Collector Current vs. Case Temperature
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1000<br>100<br>10μsec<br>10<br>100μsec<br>1msec<br>1<br>DC<br>0.1 Tc = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.01 FHLHt<br>1 10 100 1000 10000<br>VCE (V)<br>Fig. 3 - Forward SOA<br>TC = 25°C, TJ ≤ 150°C; VGE =15V<br>1000<br>100<br>A<br>SSAeS<br>10<br>a ee ll<br>1<br>10 100 1000 10000<br>VCE (V)<br>IC (A)<br>IC (A)<br>**----- End of picture text -----**<br>
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Fig. 5 - Reverse Bias SOA<br>TJ = 150°C; VGE = 20V<br>**----- End of picture text -----**<br>
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600<br>500 TTL.<br>SN<br>400<br>N ~<br>300 PIN<br>| ft<br>200<br>100 rTPINTTN |<br>aw<br>0<br>25 50 75 100 125 150<br> TC (°C)<br>Fig. 2 - Power Dissipation vs. Case<br>Temperature<br>5.0<br>IC = 1mA<br>4.5<br>4.0<br>3.5<br>3.0<br>25 50 75 100 125 150<br>TJ , Temperature (°C)<br>VGE(th), Gate Threshold Voltage (Normalized)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 4** - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature
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100<br>VGE = 18V<br>VGE = 15V<br>80 VGE = 12V<br>VGE = 10V<br>VGE = 9.0V<br>foe VGE = 8.0V<br>60<br>| VGE = 7.0V<br>40 Tay,<br>20<br>0 fA | |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 6** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20μs
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100<br>VGE = 18V<br>VGE = 15V<br>80 VGE = 12V<br>VGE = 10V<br>VGE = 9.0V<br>VGE = 8.0V<br>60<br>an VGE = 7.0V<br>40<br>flf |<br>20<br>lannm<br>0 PH |" 4+ 4<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 7** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20μs
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8<br>7 TT<br>6 Ch<br>5 I CE = 17A<br>ICE = 33A<br>4 PL ICE = 66A<br>3 C=<br>2 Tt<br>1 o—_<br>0 ee<br>5 10 15 20<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE<br>TJ = -40°C<br>8<br>7<br>6<br>5 — I CE = 17A<br>ICE = 33A<br>4 ICE = 66A<br>3<br>2 he<br>1<br>0<br>a ee<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
**Fig. 11** - Typical VCE vs. VGE TJ = 150°C
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100<br>VGE = 18V<br>VGE = 15V<br>80 VGE = 12V<br>VGE = 10V<br>VGE = 9.0V<br>VGE = 8.0V<br>60<br>_ VGE = 7.0V<br>40<br>wav,<br>20<br>pe 4<br>0 Jit| ft<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 8** - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20μs
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8 ce<br>7 Th<br>6<br>5 I CE = 17A<br>ICE = 33A<br>4 C= ICE = 66A<br>3 De|<br>2 _————<br>1<br>0 es<br>5 10 15 20<br> VGE (V)<br>Fig. 10 - Typical VCE vs. VGE<br>TJ = 25°C<br>100<br>80<br>Bann) an<br>60 T = 25°C<br>J<br>TJ = 150°C<br>40<br>a TP<br>20<br>0 Ee Z4nne<br>4 5 6 7 8 9 10 11<br> VGE (V)<br>ICE (A)<br>VCE (V)<br>**----- End of picture text -----**<br>
**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 20μs
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50<br>45 | | | | | ct lL<br>40<br>Sanne<br>35<br>EOFF<br>30<br>ane 4ne<br>25<br>pti yi | |<br>20<br>ae<br>15<br>10<br>iP<br>0 10 20 30 40 50 60 70<br>IC (A)<br>Energy (mJ)<br>**----- End of picture text -----**<br>
**Fig. 13** - Typ. Energy Loss vs. IC TJ = 150°C; L = 400μH; VCE = 600V, RG = 5 Ω ; VGE = 15V
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32<br>30<br>EOFF<br>28<br>26<br>24<br>0 20 40 60 80 100<br>Energy (mJ)<br>**----- End of picture text -----**<br>
Rg ( Ω )
**Fig. 15** - Typ. Energy Loss vs. RG TJ = 150°C; L = 400μH; VCE = 600V, ICE = 33A; VGE = 15V
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10000<br>Cies<br>SS<br>1000<br>pj | |<br>100<br>NE<br>Coes<br><Sle==<br>10 +———_—= Cres +1<br>1 ee ee =<br>0 100 200 300 400 500 600<br>VCE (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig. 17** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
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10000 ———<—=—==—<br>tF<br>a<br>1000<br>i<br>tdOFF<br>———<br>ee<br>100<br>Pp | |<br>0 20 40 60 80<br>IC (A)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 14** - Typ. Switching Time vs. IC TJ = 150°C; L = 400μH; VCE = 600V, RG = 5 Ω ; VGE = 15V
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10000<br>SS<br>|——| t F a<br>1000<br>See=a<br>tdOFF<br>—<br>aa ee ee es ee<br>ee ee ee ee<br>PELE<br>100<br>0 20 40 60 80 100<br>RG ( Ω )<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>
**Fig. 16** - Typ. Switching Time vs. RG TJ = 150°C; L = 400μH; VCE = 600V, ICE = 33A; VGE = 15V
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16<br>14 VCES = 600V<br>z VCES = 400V ae<br>12 a =e<br>10<br>8 At<br>tt<br>6<br>|<br>4 AA}t+<br>2<br>tt ttt<br>0 /+tit{{+-fie} tt<br>0 20 40 60 80 100 120 140 160<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>
**Fig. 18** - Typical Gate Charge vs. VGE ICE = 33A; L = 2.0mH
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1<br>ee<br>PE et<br>0.1 sera D = 0.50<br>PT 0.20 Ln err<br>0.10<br>0.01 eeP|PE 0.05 0.020.01 HESEE40 τ J τ J τ 1 τ ot 1 HIE R1R ot 1 τ 2 τ R 2 2R oh 2 R τ 3 3R τ 3 3 ot τ R4 τ 4R 4 4 τ C τ |ee Ri (0.0011 0.0000030.0518 0.000223 0.1300 0.001791 °C/W) HF τ i (sec) ee<br>Te i i { T ff<br>0.001 BaD SINGLE PULSE le CiCi= τ i / Rii / Ri —_—_| 0.0472 0.008118<br>PALa | | | iti ( THERMAL RESPONSE Hee ) a ee eeety Notes: PERF Ea]| {| |Ty<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>PTeere TEee ell iil<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig 19.** Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br>
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L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.2** - RBSOA Circuit
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diode clamp /<br>DUT<br>L<br>DUT / VCC<br>DRIVER<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.3** - Switching Loss Circuit
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C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075μF<br>E sense<br>E force<br>**----- End of picture text -----**<br>
**Fig.C.T.4** - BVCES Filter Circuit
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700 70<br>tf<br>600 60<br>fi<br>500 50<br>400 40<br>90% ICE<br>300 30<br>Le<br>ik<br>200 20<br>5% VCE<br>100 10<br>10% ICE<br>0 0<br>Sy NOL<br>Eoff Loss<br>-100 -10<br>-2 0 2 4 6<br>time(μs)<br> (V) (A)<br>VCE ICE<br>**----- End of picture text -----**<br>
**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3
Dimensions are shown in milimeters (inches)
**�����������**
## **����������������**
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
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## **Revision History**
|**Revision Historyy**||
|---|---|
|**Date**|**Comments**|
|7/8/2014|•Updated datasheet based on new template and retest data.|
|7/11/2014|•Removed Ic Nominal current on page 1.<br>•Updated typo on switch time test condition from"25C"to"150C"on page 2.|
|1/9/2015|Updated typo on switch time test condition fromon page 2.<br>•Corrected typo on V(BR)CEStest condition from "100μA" to "250μA" on page 2.<br>• Corrected typo on VGE(TH)test condition from "1mA" to "250μA" onpage 2.|
|3/2/2015|•Removed ICES= 2uA @ VCE = 10V onpage 2.|
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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