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AUIRFZ48N
Power MOSFET, N Channel, 55 V, 69 A, 0.011 ohm, TO-220AB, Through Hole
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:69A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (08-Jul-2021)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET
- Qualification: AEC-Q101
- Power Dissipation: 160W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 55V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 69A
- Drain Source On State Resistance: 0.011ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 1.52 € |
| Current stock | 10+ |
| Lead time | 7 days |
Datasheet
**AUTOMOTIVE GRADE**
PD - 97732
## AUIRFZ48N
## **Features**
## HEXFET[®] Power MOSFET
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D V(BR)DSS 55V<br>RDS(on) typ. 11m <br>G max 14m <br>S ID 69A<br>**----- End of picture text -----**<br>
## **Description**
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
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D<br>S<br>D<br>G<br>TO-220AB<br>AUIRFZ48N<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings**
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
|dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise<br>specified.|dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise|dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwiseA) is 25°C, unless otherwise|dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwiseA) is 25°C, unless otherwise|
|---|---|---|---|
||**Parameter**|**Max.**|**Units**|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~ie~~|69<br>~~ie~~|A<br>~~ie~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~ie~~|49<br>~~ie~~||
|IDM|Pulsed Drain Current<br>~~ie~~|270<br>~~ie~~||
|PD@TC= 25°C|Power Dissipation|160|W|
||Linear DeratingFactor|1.1|W/°C|
|VGS|Gate-to-Source Voltage<br>~~-~~|± 20|V|
|EAS|Single Pulse Avalanche Energy (ThermallyLimited)<br>~~a~~<br>~~-~~|265<br>~~a~~|mJ|
|EAS(tested)|Single Pulse Avalanche EnergyTested Value<br>~~-~~<br>~~>~~|290<br>~~>~~||
|IAR|Avalanche Current|See Fig.12a, 12b, 15, 16|A|
|EAR|Repetitive Avalanche Energy||mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55 to + 175|°C|
||SolderingTemperature, for 10 seconds|300(1.6mm from case)||
||MountingTorque,6-32 or M3 screw|10 lbf in(1.1N m)||
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10/3/11
**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|---|---|---|
|V(BR)DSS<br>V(BR)DSS/TJ<br>RDS(on)<br>VGS(th)|Drain-to-Source Breakdown Voltage<br>55<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.054<br>–––<br>V/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>11<br>14<br>m<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VDS= VGS, ID= 100μA<br>VGS= 0V, ID= 250μA<br>Reference to 25°C, ID= 1.0mA<br>VGS= 10V, ID= 40A<br>~~QO~~<br>~~GO~~<br>~~GO~~<br>~~GO~~<br>~~ss~~<br>~~**G**n~~<br>~~Gs~~<br>~~Q~~||
|gfs<br>Forward Transconductance<br>24<br>–––<br>–––<br>S<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>25<br>μA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>**Dynamic Electrical Characteristics @ TJ = 25°C(unless otherwise specified)**<br>VDS= 55V, VGS= 0V<br>VDS= 55V, VGS= 0V, TJ= 125°C<br>VGS= -20V<br>VDS= 10V, ID= 40A<br>VGS= 20V<br>~~Gs GQ~~<br>~~ee~~<br>~~eee Oe eee~~<br>~~|et~~<br>~~ee~~<br>~~ee~~<br>~~a a~~|||
||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**||
|Qg<br>Qgs<br>Qgd<br>td(on)<br>tr<br>td(off)<br>tf<br>LD<br>LS|S<br>D<br>G<br>Total Gate Charge<br>–––<br>42<br>63<br>Gate-to-Source Charge<br>–––<br>9.0<br>–––<br>nC<br>Gate-to-Drain("Miller")Charge<br>–––<br>17<br>–––<br>Turn-On DelayTime<br>–––<br>12<br>–––<br>Rise Time<br>–––<br>62<br>–––<br>Turn-Off DelayTime<br>–––<br>37<br>–––<br>ns<br>Fall Time<br>–––<br>37<br>–––<br>Internal Drain Inductance<br>–––<br>4.5<br>–––<br>Between lead,<br>nH<br>6mm (0.25in.)<br>Internal Source Inductance<br>–––<br>7.5<br>–––<br>from package<br>and center of die contact<br>VGS= 10V<br>VDD= 28V<br>ID= 40A<br>RG= 7.6<br>ID= 40A<br>VDS= 44V<br>VGS= 10V<br>~~es~~<br>~~ee~~<br>~~**ee** ~~~~**ee**~~<br>~~ee~~<br>~~@~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~a)~~||
|Ciss|Input Capacitance<br>–––<br>1900<br>–––<br>VGS= 0V<br>~~a~~||
|Coss|Output Capacitance<br>–––<br>470<br>–––<br>VDS= 25V<br>~~a~~||
|Crss<br>Coss<br>Coss<br>Cosseff.|Reverse Transfer Capacitance<br>–––<br>120<br>–––<br>pF<br>Output Capacitance<br>–––<br>2180<br>–––<br>Output Capacitance<br>–––<br>340<br>–––<br>Effective Output Capacitance<br>–––<br>610<br>–––<br>VGS= 0V, VDS= 1.0V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 44V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 0V to 44V<br>ƒ= 1.0MHz<br>~~a~~<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee ee~~<br>~~a~~<br>~~®~~||
|**Source-Drain Ratings and Characteristics**|||
||**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|IS|Continuous Source Current<br>–––<br>–––<br>69<br>(BodyDiode)<br>A<br>MOSFET symbol<br>showing the<br>~~eo~~||
|ISM|Pulsed Source Current<br>–––<br>–––<br>270<br>(BodyDiode)<br>p-njunction diode.<br>integral reverse<br>~~oo~~||
|VSD<br>trr<br>Qrr<br>ton|Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse RecoveryTime<br>–––<br>71<br>110<br>ns<br>Reverse RecoveryCharge<br>–––<br>230<br>345<br>nC<br>Forward Turn-On Time<br>TJ= 25°C, IS= 40A, VGS= 0V<br>TJ= 25°C, IF= 40A, VDD= 28V<br>di/dt = 100A/μs<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~Gs OQ~~<br>~~**e**e~~<br>~~e~~<br>~~@~~<br>~~Ge~~||
Repetitive rating; pulse width limited by
> Repetitive rating; pulse width limited by ) Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. ° Limited by TJmax, starting TJ = 25°C, L = 0.24mH © This value determined from sample failure population, starting RG = 50, IAS = 40A, VGS =10V. Part not TJ = 25°C, L = 0.24mH, RG = 50, IAS = 40A, VGS =10V. recommended for use above this value.
> [R] is measured at T, approximately 90°C. © Pulse width 1.0ms; duty cycle 2%.[@]
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
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## **†**
## **Qualification Information**
|**Qualification Information**<br>**†**|**Qualification Information**<br>**†**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101) ††||
|||Comments:<br>This part number(s) passed Automotive qualification.<br>IR’s<br>Industrial<br>and<br>Consumer<br>qualification<br>level<br>is<br>granted by<br>extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||TO-220|N/A|
|**ESD**|Machine Model|Class M3 (+/- 400V)†††<br>AEC-Q101-002||
||Human Body Model|Class H1C (+/- 1500V)†††<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 2000V)†††<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||
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1000 1000<br>VGS<br>TOP 15V<br>12V<br>10V<br>8.0V<br>7.0V > aie atl<br>6.0V<br>100 5.5V 100<br>BOTTOM 5.0V<br>5.0V<br>10 L— — 10<br>60μs PULSE WIDTH<br>1 PTESt Tj = 25°C an 1<br>0.1 1 10 100 0.1<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>1000 50<br>==aSS===<br>100 T J = 175°C 40<br>30<br>PTA EL<br>10 be cance e n<br>HHH<br>20<br>ee ee | ee ee ee ee ee ee<br>TJ = 25°C<br>1<br>Pie<br>10<br>VDS = 25V<br>60μs PULSE WIDTH<br>0.1 |PTT{ff 0<br>0 2 4 6 8 10 12 14 16 0<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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1000<br>VGS<br>TOP 15V<br>12V<br>10V<br>8.0V<br>7.0V eT<br>6.0V<br>100 5.5V<br>BOTTOM 5.0V<br>5.0V<br>10 ae omnitetenill<br>60μs PULSE WIDTH<br>1 PTEGane Tj = 175°C Baill<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2. Typical Output Characteristics<br>50<br>T = 25°C<br>J<br>fe<br>40<br>T = 175°C<br>J<br>30<br>Ane<br>n<br>poo<br>20 Zz<br>10 VDS = 10V<br>380μs PULSE WIDTH<br>=<br>0<br>0 20 40 60 80<br>ID,Drain-to-Source Current (A)<br> Typical Forward Transconductance vs. Drain Current<br>2.5<br>ID = 67A<br>VGS = 10V<br>2.0<br>Vy,<br>1.5 a<br>Ve<br>1.0<br>0.5 a at<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Typical Forward Transconductance vs. Drain Current
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1000<br>T = 175°C<br>J<br>pee<br>100<br>PO fF T = 25°C<br>J<br>rf fp<br>10<br>V GS = 0V<br>1.0 |Pptify |<br>0.2 0.6 1.0 1.4 1.8 2.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 5.** Typical Source-Drain Diode Forward Voltage
**Fig 6.** Normalized On-Resistance vs. Temperature
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100000<br>VGS Ciss = CGS iss = C = C= 0V, f = 1 MHZ 0V, f = 1 MHZgs + Cgd, C+ Cgd, Cgd, C= 1 MHZ 1 MHZ, C = 0V, f = 1 MHZ 0V, f = 1 MHZgs + Cgd, C+ Cgd, Cgd, C= 1 MHZ 1 MHZ, C<br>Ciss = CGS iss = C = C= 0V, f = 1 MHZ 0V, f = 1 MHZgs + Cgd, C+ Cgd, Cgd, C= 1 MHZ 1 MHZ, C gs + Cgd, C+ Cgd, Cgd, C= 1 MHZ 1 MHZ, C ds SHORTEDSHORTED<br>= C rss = C gd<br>C = C C + C<br>10000 | oss ST ds gd<br>Cississ<br>C<br>oss<br>1000<br>PSR Crssrss<br>ee ee ee ee<br>100 ee Nl<br>ee ee ee ee ee Eel<br>10 eere eel<br>1 10 100<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
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100000 14.0<br>VGS Ciss = CGS iss = C = C= 0V, f = 1 MHZ 0V, f = 1 MHZgs + Cgd, C+ Cgd, Cgd, C= 1 MHZ 1 MHZ, C ds SHORTEDSHORTED ID= 40A<br>= C rss = C gd 12.0 naa V DS = 44V [dT<br>10000 | C oss = C C ST ds + C gd aa VDS= 28V SG<br>10.0 V DS = 11V<br>Cississ<br>8.0<br>C<br>oss<br>1000<br>PSR Crssrss 6.0 | | TY<br>ee ee ee ee Aa<br>4.0<br>100 ee Nl 7<br>ee ee ee ee ee Eel 2.0 Pannen<br>10 reeere eel 0.0 Ji il) tly<br>1 10 100 0 5 10 15 20 25 30 35 40 45 50<br>VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)<br> Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage<br>1000 70<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>60<br>: | 1 00μsec<br>100 1msec<br>50<br>40<br>ail<br>10<br>10msec<br>OSS} 0 30 EE PNS<br>Se eee at<br>20<br>1 DC<br>masiliimmaiiill mpi ii pt} [ttt] hE<br>Tc = 25°C<br>Tj = 175°C 10<br>Single Pulse<br>0.1 aECore lll 0 Py} of 7 ft TY<br>0.1 1 10 100 25 50 75 100 125 150 175<br>VDS, Drain-toSource Voltage (V) TC , Case Temperature (°C)<br>Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature<br>10<br>a a ee ee ee ee ee ee ee ee<br>1 Ee rT<br>D = 0.50<br>0.20<br>| en Pf HEF TY<br>0.1 rrr 0.10<br>A<br>0.05<br>0.02 He A H+ A A<br>0.01<br>0.01 Te<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 annemT LT ET EESS |ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain Current (A)<br>ID, Drain-to-Source Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage
**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage
**Fig 10.** Maximum Drain Current vs. Case Temperature
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
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4.5<br>4.0<br>AY ET TT Ty<br>ENGR Sena<br>3.5<br>3.0<br>LL ID = 100μA PSped PS<br>2.5 I D = 1.0mA ZaNNSEE<br>ID = 1.0A<br>ry NGN<br>2.0<br>SS<br>1.5<br>TILT ETETN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
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800<br>ID<br>700 TOP 7.2A<br>NORE 14A<br>600 BOTTOM 40A<br>AE<br>500<br>400<br>SE\GHEEEEREE<br>300<br>NENT<br>200<br>EL NINE EE<br>100<br>PSSST<br>0<br>COUPES<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br> Maximum Avalanche Energy vs. Drain Current<br>1000<br>Duty Cycle = Single Pulse<br>100<br>0.01<br>0.05<br>10<br>0.10<br>eee ey ee<br>1<br>pep<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>0.1<br>1.0E-06 1.0E-05<br>Fig 14.<br>200<br>TOP Single Pulse<br>BOTTOM 1.0% Duty Cycle<br>ID = 40A<br>150 NNE<br>PAN TTTTTL<br>100<br>PENN<br>BRESNEE EEE<br>50 PENA TEE<br>SERRE RNNGEE<br>SeeeeeeeeSSN<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
**Fig 12.** Maximum Avalanche Energy vs. Drain Current
**Fig 13.** Threshold Voltage vs. Temperature
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1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs avalanche<br>100 pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>0.01<br>0.05<br>10<br>0.10<br>eee ey ee<br>1<br>pep Pe<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>ee Tstart = 150°C.<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
**Fig 14.** Typical Avalanche Current vs.Pulsewidth
**Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)**
1. Avalanche failures assumption:
- Purely a thermal phenomenon and failure occurs at a
- temperature far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
- Tjmax (assumed as 25°C in Figure 14, 15).
- tav = Average time in avalanche.
- D = Duty cycle in avalanche = tav ·f
- ZthJC(D, tav) = Transient thermal resistance, see figure 11)
**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]**
**Fig 15.** Maximum Avalanche Energy vs. Temperature
**EAS (AR) = PD (ave)·tav**
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Driver Gate Drive<br>P.W.<br>D.U.T + { P.W. + Period ——— + D = —— Period<br>) [©)] Circuit Layout Considerations V t t GS=10<br>| — - GroundLow StrayPlane Inductance<br> Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>@ D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 we VDD<br> Re-Applied<br>Re Driver same type as D.U.T. + Voltage Body Diode Forward Drop iv<br>(4 vidt controlled by Rg Vp p - Inductor Curent<br><br>D.U.T. - Device Under Test e s<br>Isp controlled by Duty Factor "D" @) Ripple 5% ISD<br>* Vos = 5V for Logic Level Devices<br>Fig 16. eak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® ower MOSFETs<br>V(BR)DSS(BR)DSS<br>15V ~— tp -—><br>VDS L DRIVER<br>RG D.U.T +<br>w - [V][DD] |<br>IAS A<br>dt /<br>2V0VGS aie<br>tp 0.01 VAY IASAS oe<br>**----- End of picture text -----**<br>
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V(BR)DSS(BR)DSS<br>~— tp -—><br>|<br>/<br>IASAS<br>**----- End of picture text -----**<br>
**Fig 17b.** Unclamped Inductive Waveforms
## **Fig 17a.** Unclamped Inductive Test Circuit
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Current Regulator<br>i Same Type as D.U.T.<br>| 50K<br>fi 12V .2F .3F !<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>o e IG > ID |<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
**Fig 18a.** Gate Charge Test Circuit
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Id<br>Vds fl<br>| Vgs<br>Vgs(th)<br>H ! H H<br>g p ! t ! 1<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**Fig 18b.** Gate Charge Waveform
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VDS<br>90%<br>10%VGS |— " > !| lab l e<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**Fig 19a.** Switching Time Test Circuit
**Fig 19b.** Switching Time Waveforms
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## **Ordering Information**
|**Base part**<br>**number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRFZ48N|TO-220|Tube|**Quantity**<br>50|AUIRFZ48N|
www.irf.com
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www.irf.com
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Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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