AUIRFZ44NS

PD - 96378 

## **AUTOMOTIVE GRADE** 

## AUIRFZ44N 

## **Features** 

Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * 

## **Description** 

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 

## HEXFET[®] Power MOSFET 

|||HEXFET|HEXFET|HEXFET[®]|[®]Power MOSFET|Power MOSFET|
|---|---|---|---|---|---|---|
|||D||**V(BR)DSS**||**55V**|
||||||||
|G||||**RDS(on)   max.**|**max.**|**17.5m**Ω|
||||||||
|||S||**ID **||**49A**|



|||D||||
|---|---|---|---|---|---|
|||D<br>G|S|||
|||TO-220AB<br>AUIRFZ44N||||
|||||||
|**G**||**D**|||**S**|
|Gate||Drain|||Source|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

||**Parameter**<br>~~or~~|**Max.**<br>~~or~~|**Units**|
|---|---|---|---|
|ID@ TC =25°C|Continuous Drain Current,VGS@ 10V<br>~~a~~<br>~~or~~|49<br>~~a~~<br>~~or~~|A<br>~~a~~<br>~~So~~|
|ID @TC= 100°C|Continuous Drain Current,VGS@ 10V<br>~~So~~<br>~~or~~|35<br>~~So~~<br>~~or~~||
|IDM|Pulsed DrainCurrent<br>~~or~~|160<br>~~or~~||
|PD @TC= 25°C|Power Dissipation<br>~~or~~<br>~~[os~~|94<br>~~or~~<br>~~[os~~|W<br>~~[os~~|
||Linear DeratingFactor<br>~~LG~~|0.63<br>~~LG~~|W/°C<br>~~LG~~|
|VGS|Gate-to-Source Voltage<br>~~oo~~|±20<br>~~oo~~|V<br>~~oo~~|
|EAS (Thermally Limited)|Single Pulse Avalanche Energy<br>~~oo~~<br>~~ie~~|150<br>~~oo~~<br>~~ie~~|mJ<br>~~oo~~<br>~~ie~~|
|EAS(tested)|~~Single Pulse Avalanche Energy Tested Value~~<br>~~ie~~|530<br>~~ie~~||
|IAR|AvalancheCurrent<br>~~oo~~|25<br>~~oo~~|A<br>~~oo~~|
|EAR|Repetitive Avalanche Energy<br>~~or~~|9.4<br>~~or~~|mJ<br>~~or~~|
|dv/dt<br>~~OO~~|Peak Diode Recoverydv/dt<br>~~or~~<br>~~OO~~|5.0<br>~~or~~<br>~~SC~~|V/ns<br>~~or~~|
|TJ<br>TSTG<br>~~OO~~<br>~~[>~~|Operating Junction and<br>Storage Temperature Range<br>~~OO~~<br>~~[>~~|-55  to + 175<br>~~SC~~<br>|°C<br>~~sp~~|
|~~OO~~<br>~~[>~~|SolderingTemperature,for 10 seconds<br>~~OO~~<br>~~[>sp~~|300(1.6mm from case)<br>~~SC~~<br>~~sp~~||
|~~OO~~<br>~~[>~~|MountingTorque,6-32 or M3 screw<br>~~OO~~<br>~~[>~~<br>~~oo~~|10 lbf in (1.1N m)<br>~~SC~~<br><br>~~oo~~|~~oo~~|



HEXFET[®] is a registered trademark of International Rectifier. 

- Qualification standards can be found at http://www.irf.com/ 

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## **Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|55|–––|–––|V|VGS = 0V, ID = 250μA|
|Δ|V(BR)DSS/|Δ|TJ|Poes—ai‘i‘ie|Breakdown Voltage Temp. Coefficient|–––|0.058|–––|V/°C|Reference to 25°C, ID = 1mA|
|RDS(on)|rs|Static Drain-to-Source On-Resistance|–––|nD GD|–––|17.5|nD|I|m|Ω|VGS = 10V, ID = 25A|
|VGS(th)|UD|Gate Threshold Voltage|2.0|–––|4.0|V|VDS = VGS, ID = 250μA|
|gfs|Poees—(‘i‘ie|Forward Transconductance|19|–––|nD|I|–––|(RD|S|(OO|VDS = 25V, ID = 25A|
|IDSS|Drain-to-Source Leakage Current|–––|–––|25|μA|VDS =55V, VGS = 0V|
|a|ee|–––|–––|ll|250|VDS = 44V, VGS = 0V, T|Oe|J = 150°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS = 20V|
|EE|Gate-to-Source Reverse Leakage|a|–––|–––|ee|-100|ee|VGS = -20V|
|Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)|
|Qg|Total Gate Charge|–––|–––|63|ID =  25A|
|Qgs|es|Gate-to-Source Charge|–––|Gs|–––|GE|14|nC|VDS = 44V|
|Qgd|es|Gate-to-Drain ("Miller") Charge|–––|–––|23|VGS = 10V,See Fig 6 and 13|
|td(on)|es|Turn-On Delay Time|–––|GE|12|–––|VDD = 28V|
|tr|es|Rise Time|–––|GE|60|–––|ID = 25A|
|td(off)|Turn-Off Delay Time|–––|44|–––|ns|RG = 12|Ω|
|tf|Fall Time|–––|45|–––|VGS = 10V|,|See Fig.10|
|es Gs Gs|Q|
|LD|Internal Drain Inductance|Between lead,|D|
|–––|4.5|–––|
|nH|6mm (0.25in.)|
|LS|Internal Source Inductance|–––|7.5|–––|from package|G|
|Po||and center of die contact|S|
|Ciss|es|Input Capacitance|(Os|–––|1470|–––|VGS = 0V|
|Coss|Output Capacitance|–––|360|–––|pF|VDS = 25V|
|Crss|es|Reverse Transfer Capacitance|–––|88|–––|ƒ = 1.0MHz, See Fig.5|
|EAS|PF|Single Pulse Avalanche Ener|rrr|rrt—i(i|gy|OLY|–––|530|150|mJ|IAS = 25A, L= 0.47mH|
|Diode|Characteristics|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|IS|Continuous Source Current|–––|–––|49|MOSFET symbol|D|
|(Body Diode)|A|showing  the|
|ISM|Pulsed Source Current|–––|–––|160|integral reverse|G|
|tpPow|(Body Diode)|p-n junction diode.|S|
|VSD|Po|Diode Forward Volta|e—i—i‘iaire|ge|–––|–––|tll|1.3|V|TJ = 25°C, IS = 25A, VGS = 0V|OFT|
|trr|Reverse Recovery Time|–––|63|95|ns|TJ = 25°C, IF = 25A|
|Qrr|Snee|Reverse Recovery Charge|Gs|–––|Pn|170|ED|260|nC|di/dt = 100A/μs|@|
|ton|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|
|a|

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0) Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

(©) ISD ≤ 25A , di/d t ≤ 230A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

@® Starting TJ = 25°C, L = 0.48mH Pulse width ≤ 400μs; duty cycle ≤ 2%. RG = 25 Ω , IAS = 25A. (See Figure 12) © This is a typical value at device destruction and represents operation outside rated limits. © This is a calculated value limited to TJ = 175°C . 

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## **Qualification Information[†]** 

|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments:<br>This<br>part<br>number(s)<br>passed<br>Automotive<br>qualification.<br>IR’s Industrial and Consumer qualification<br>level is granted by extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||3L-TO-220|N/A|
|**ESD**|Machine Model|Class M3(+/- 400V )†††<br>(per AEC-Q101-002)||
||Human Body Model|Class H1C(+/- 1250V )†††<br>(per AEC-Q101-001)||
||Charged Device Model|Class C5(+/- 1250V )†††<br>(per AEC-Q101-005)||
|**RoHS Compliant**||Yes||



† Qualification standards can be found at International Rectifier’s web site:  http//www.irf.com/ 

††     Exceptions to AEC-Q101 requirements are noted in the qualification report. 

†††   Highest passing voltage 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V ipa<br> 100<br>Py’ 4a<br> 10<br>4.5V<br>20μs PULSE WIDTH<br>AoPTI ET T  = 25J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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 1000<br>T  = 25  CJ °<br> 100 SaGannD?>>=—== =Ses T  J = 175  C° an=<br>===> oa oe<br>FEARa,  EER REFER<br>42 eee<br> 10 A |<br>Sooo aS Seas cece<br>V      = 25V DS<br> 1 fff SEEEEEE 20μs PULSE WIDTH<br>4 5 6 7 8 9 10 11<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>te<br> 100<br>4.5V<br>a =< oil<br> 10<br>20μs PULSE WIDTH<br>T  = 175J °C<br> 1 aPnLi.<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 2.   Typical Output Characteristics<br>2.5<br>ID = 49A<br>2.0<br>CECE<br>SaGennep 4008<br>1.5<br>LA<br>PEt TTTPrP<br>1.0 ry PT DAT<br>CeresPT<br>0.5 eT<br>PLETESERRETT ETE VGS= 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>D<br>I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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2500<br>VGSGS = 0V, f = 1MHz<br>CCrss iss == CCgd gs + C gd , C      SHORTED ds<br>Crss = Cgd<br>2000 Soalal Cossoss = Cdsds + Cgdgd<br>| Soo<br>a Cississ<br>1500 PTT<br>PNTellell<br>1000<br>lll<br>a ll<br>Cossoss<br>500<br>PST<br>pT<br>C rss<br>|<br>0 eee ll<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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VGSGS = 0V, f = 1MHz 20 ID = 25A<br>CCrss iss rss == CCgd gs gd + C gd , C      SHORTED ds V DS = 44V<br>2000 Soalal Cossoss = Cdsds + Cgdgd 16 PoTT VVDSDS == 27V 11V PLETT<br>| Soo PTT TA<br>a Cississ |<br>1500 PTT 12 PTT iT] | ALLL<br>PNTellell PTTL TitLAL<br>1000<br>lll 8 PET TT PA<br>a ll LET<br>Cossoss<br>500<br>PST 4 AA<br>pT ap e=” 4a<br>C rss<br>| SAREE<br>0 eee ll ZEReeeeee<br> 1  10  100 0<br>0 10 20 30 40 50 60 70<br>V     , Drain-to-Source Voltage (V)DSDS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br> 100 100<br>ee T  = 175  CJ ° oorpeg eal<br>10 100μsec<br> 10<br>1msec<br> 1 T  J = 25  C° 1<br>Tc = 25°C 10msec<br>Tj = 175°C<br>yf V      = 0 V GS 0.1 Single Pulse 0<br>0.1<br>0.0 0.6 1.2 1.8 2.4 1 10 100<br>V     ,Source-to-Drain Voltage (V)SD VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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50 SAE EE EE EE Vos BR<br>40 PL RATE ETE Ves<br>PLT TAKE EET Re DUT<br>30 pit ETN ET :<br>SERENE Ht Vos<br> 1<br>20 SERENESERRE muse»  0.1 % 7<br>SERRE<br>100 thy ete Fig 10a. Switching Time Test Circuit<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)° VDS<br>90%<br>Fig 9.   Maximum Drain Current Vs. |<br>Case Temperature<br>10%<br>VGS | |<br>AY.<br>td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 10<br>a eeeee eel<br> 1<br>es D = 0.50 ee re a ced EE<br>0.20<br>Sn 6 ee ee<br>0.10<br>PDM<br>SS 0.05 ee | |<br>0.1<br>0.02 SINGLE PULSE t1<br>0.01 (THERMAL RESPONSE) t2<br>Peee ee eeeeeeee eeei eeeeeeeee 1. Duty factor D = Notes: t   / t 1 2<br>eis 2. Peak T J= P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>b oar tp 0.01 Ω<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp<br>< -><br>/ al<br>/ |<br>IAS<br>12b. Unclamped Inductive Waveforms<br>QG<br>A < QGS + QGD ae<br>VG<br>Charge<br>**----- End of picture text -----**<br>


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300<br>ID<br>NEREEEE<br>TOP 10A<br>18A<br>KORREEE<br>240 PN tT BOTTOM 25A<br>180 GENESEE ERE<br>KU RNEE EE<br>120<br>NONBNEEEEEEEPSN NE<br>60<br>SeERNNNGEEEE<br>ef) Sl<br>0 fz _—<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 μ F<br>I .3 μ F<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>O e<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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+<br>*<br>D.U.T    •  CircuitLowLayoutStray ConsiderationsInductance<br>•  Ground Plane<br>6)  •   Low Leakage Inductance<br>Current Transformer<br>-<br>+<br>- - +<br>°8 1 ®<br>00<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D"<br>•   D.U.T. - Device Under Test -<br>©<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. i d Period _ ft<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current<br>+ \ di/dt UN<br>@ D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ +<br>Wy<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>@ Inductor Curent<br>a<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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## **Ordering Information** 

|**Base part**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRFZ44N|TO-220|Tube|**Quantity**<br>50|AUIRFZ44N|



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Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. 

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