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AUIRFZ24NS
Power MOSFET, N Channel, 55 V, 17 A, 0.07 ohm, TO-263 (D2PAK), Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Available until stocks are exhausted Alternative available
- MSL: -
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET
- Qualification: AEC-Q101
- Power Dissipation: 45W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 55V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 17A
- Drain Source On State Resistance: 0.07ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.505 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
AUIRFZ24NS AUIRFZ24NL ~~po~~ **AUTOMOTIVE GRADE** HEXFET[® ] Power MOSFET ## ~~Cinfin eon~~ ## **Features** - Advanced Planar Technology | Advanced Planar TechnologyAdvanced Planar Technology<br>Low On-Resistance<br>Dynamic dV/dT and dI/dT capability<br>175°C Operating Temperature<br>Fast Switching<br>Fully Avalanche Rated<br>Repetitive Avalanche Allowed up to Tjmax|||**VDSS**<br>**55V**<br>**RDS(on) max.**<br>**0.07**<br>**ID**<br>**17A**<br>~~—-—~~|| |---|---|---|---|---| |Lead-Free, RoHS Compliant||||| |Automotive Qualified *|||D<br>D|| |**Description**<br>Specifically designed for Automotive applications, this HEXFET®<br>Power MOSFET utilizes the latest processing techniques to achieve|||S<br>G<br>S<br>GD|| |extremely low on-resistance per silicon area. Additional features of|||D2-Pak<br>TO-262|| |this design are a 175°C junction operating temperature, fast|||AUIRFZ24NS<br>AUIRFZ24NL|| |switching speed and improved repetitive avalanche rating . These||||| |features combine to make this design an extremely efficient and<br>reliable device for use in Automotive applications and a wide variety<br>of other applications||**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~/-|~~<br>~~| —~~||| |**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**||**Standard Pack**|**Quantity**<br>**Orderable Part Number**|| |AUIRFZ24NL<br>TO-262<br>Tube|||50<br>AUIRFZ24NL|| |AUIRFZ24NS<br>D2-Pak<br>Tube<br>Tape and Reel Left|||50<br>AUIRFZ24NS<br>800<br>AUIRFZ24NSTRL|| |**Absolute Maximum Ratings**||||| |Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress||||| |ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|||ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|| |implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance||||| |and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless||||| |otherwise specified.||||| |**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>17<br>A<br>ID @TC= 100°C<br>Continuous Drain Current,VGS @10V<br>12<br>IDM<br>Pulsed Drain Current<br>68<br>PD@TA= 25°C<br>Maximum Power Dissipation<br>3.8<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>45<br>Linear Derating Factor<br>0.3<br>W/°C<br>VGS<br>Gate-to-SourceVoltage<br>± 20<br>V<br>W<br>~~———————~~<br>~~ae~~<br>~~———— ———_———a~~||||| |EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) |||71<br>mJ|| |IAR<br>Avalanche Current|||10<br>A|| |EAR<br>Repetitive Avalanche Energy |||4.5<br>mJ|| |dv/dt<br>Peak Diode Recovery |||6.8<br>V/ns|| |TJ<br>Operating Junction and|||-55 to + 175|| |TSTG<br>Storage Temperature Range|||°C|| |SolderingTemperature,for 10 seconds|for 10 seconds(1.6mm from case)<br>300|||| |**Thermal Resistance**<br>**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>3.3<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount),D2Pak<br>–––<br>40<br>~~——ee~~<br>~~ee~~||||| |HEXFET® is a registered trademark of Infineon.||||| |1<br>2017-10-13<br>*****Qualification standards can be found atwww.infineon.com<br>~~—_—~~||||| AUIRFZ24NS/L ~~LLL~~ ## ~~Cinfin eon~~ ## **Static @ TJ = 25°C (unless otherwise specified)** |~~ae~~||||||| |---|---|---|---|---|---|---| |Qg<br>~~ae~~|Total Gate Charge|–––|–––|20|nC|ID= 10A<br>VDS= 44V<br>VGS= 10V, SeeFig.6 and13 | |g<br>Qgs<br>~~ae~~<br>~~ee~~|Gate-to-Source Charge|–––|–––|5.3||| |gs<br>Qgd<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|7.6<br>~~es~~||| |gd<br>td(on)<br>~~ee~~<br>~~ee~~|Turn-On DelayTime<br>~~es~~|–––<br>~~es~~|4.9<br>~~es~~|–––<br>~~es~~|ns|VDD= 28V<br>ID= 10A<br>RG= 24<br>RD=2.6, See Fig. 10| |d(on)<br>tr<br>~~ee~~<br>~~es~~|RiseTime<br>~~es~~<br>~~er~~|–––<br>~~es~~<br>~~er~~|34<br>~~es~~<br>~~er~~|–––<br>~~es~~<br>~~er~~||| |td(off)<br>~~es~~|Turn-Off DelayTime<br>~~er~~|–––<br>~~er~~|19<br>~~er~~|–––<br>~~er~~||| |d(off)<br>tf<br>~~es~~<br>~~a~~|Fall Time<br>~~er~~<br>~~ee ee~~|–––<br>~~er~~<br>~~ee~~|27<br>~~er~~<br>~~ee~~|–––<br>~~er~~<br>~~ee~~||| |LS<br>~~a~~|Internal Source Inductance<br>~~ee ee~~|–––<br>~~ee~~|7.5<br>~~ee~~|–––<br>~~ee~~|nH|, See Fig. 10<br>Between lead,<br>and center of die contact| |Ciss|Input Capacitance<br>~~ee ee~~|–––<br>~~ee~~|370<br>~~ee~~|–––<br>~~ee~~|pF <br>|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>| |Coss<br>~~ee~~|Output Capacitance<br>|–––<br>|140<br>|–––<br>||| |Crss<br>~~ee~~|Reverse Transfer Capacitance<br>|–––<br>|65<br>|–––<br>||| |**Diode Characteristics**<br>~~eepo~~||||||| |~~po~~|**Parameter **<br>~~po~~|**Min.**<br>~~po~~|**Typ. M**<br>~~po~~|**. Max.**<br>~~po~~|**Units**<br>~~po~~|**Conditions**<br>~~po~~| |IS<br>~~po~~|Continuous Source Current<br>(BodyDiode)<br>~~po~~|–––<br>~~po~~|–––<br>~~po~~|17<br>~~po~~|A<br>~~po~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-n junction diode.<br>~~po~~| |ISM|Pulsed Source Current<br>(Body Diode)|–––|–––|68||| |VSD<br>~~sD~~<br>~~$$~~|Diode Forward Voltage<br>~~sD~~<br>~~$$~~|–––<br>~~sD~~|–––<br>~~sD~~|1.3<br>~~sD~~<br>~~r—E~~|V<br>~~sD~~<br>~~r—E~~|TJ= 25°C,IS= 10A,VGS= 0V<br>~~sD~~<br>~~r—E~~| |trr<br>~~$$~~<br>~~re~~|ReverseRecoveryTime<br>~~$$~~|–––|56|83<br>~~r—E~~|nsT<br>~~r—E~~|TJ= 25°C ,IF= 10A<br>nC di/dt = 100A/µs<br>~~r—E~~| |Qrr<br>~~$$~~<br>~~re~~<br>~~re~~|Reverse RecoveryCharge<br>~~$$~~<br>~~rs~~|–––|120|180<br>~~r—E~~|nC di/dt = 100A/<br>~~r—E~~|| |ton<br>~~$$~~<br>~~re~~<br>~~re~~|Forward Turn-On Time<br>~~$$~~<br>~~rs~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~r—E~~||||| ## **Notes:** - Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) - Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 25, IAS = 10A, VGS =10V. (See fig.12) - ISD 10A, di/dt 280A/µs, VDD V(BR)DSS, TJ 175°C. - Pulse width 400µs; duty cycle 2%. - When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2017-10-13 ~~Cinfineon~~ AUIRFZ24NS/L ~~[~~ **Fig. 1** Typical Output Characteristics **==> picture [220 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>T = 25°CJ<br>T = 175°CJ<br>10 4<br> V = 25VDS<br> 20µs PULSE WIDTH<br>1<br>4 5 6 7 8 9 10<br>V , Gate-to-Source Voltage (V)GS<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 3** Typical Transfer Characteristics **Fig. 2** Typical Output Characteristics **==> picture [230 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br> I = 17AD<br>2.5<br>2.0<br>1.5<br>1.0 ELLEA | Fa LL<br>0.5<br> V = 10V GS<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br> **Fig. 4** Normalized On-Resistance vs. Temperature 3 2017-10-13 AUIRFZ24NS/L ~~LLL~~ ## ~~Cinfineon~~ **==> picture [226 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 700<br>V = 0V, f = 1MHzGS<br>C = C + C , C SHORTED iss gs gd ds<br>600 C = Crss gd<br>f C = oss ds gdC + o C<br>500 C iss<br>400 C oss<br>300 =<br>~~<br>200 C rss<br>100<br>0 ee SooSEE<br>1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **==> picture [220 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>pee<br>a<br>T = 175°CJ<br>T = 25°CJ<br>10<br>/ A<br>V = 0V GS<br>1<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>V , Source-to-Drain Voltage (V)SD<br>I , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode Forward Voltage **==> picture [229 x 582] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>I = 10AD<br> V = 44VDS<br> V = 28VDS<br>16 ef pf<br>12 A,<br>Ea<br>8 Ene An<br>4<br> FOR TEST CIRCUIT<br> SEE FIGURE 13<br>0 aanAi<br>0 4 8 12 16 20<br>Q , Total Gate Charge (nC)G<br>Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage<br>1000<br> OPERATION IN THIS AREA LIMITED<br> BY R DS(on)<br>100<br>10µs<br>10 100µs<br>PeENE SA |<br> T = 25°CC 1ms<br> T = 175°CJ<br> Single Pulse 10ms<br>1<br>1 10 100<br>V , Drain-to-Source Voltage (V)DS<br>GS<br>V , Gate-to-Source Voltage (V)<br>I , Drain Current (A)D<br>**----- End of picture text -----**<br> **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage **Fig 8.** Maximum Safe Operating Area 4 2017-10-13 ~~re~~ ~~Cinfineon~~ AUIRFZ24NS/L ~~[~~ **==> picture [194 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>16 Nt tT EE<br>tT Tt<br>PPR<br>12<br>pit PN ETT<br>PT TAL EL<br>8<br>PEEEPN<br>SERRE REReENe<br>4 PTT TEE EEN<br>piEt t i tTtyy<br>PTET<br>0 TT TEE<br>25 50 75 100 125 150 175<br>T , Case TemperatureC ( C)°<br>I , Drain Current (A)D<br>**----- End of picture text -----**<br> **Fig 10a.** Switching Time Test Circuit **Fig 9.** Maximum Drain Current vs. Case Temperature **Fig 10b.** Switching Time Waveforms **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 2017-10-13 5 ~~Cinfineon~~ AUIRFZ24NS/L ~~LL~~ **==> picture [183 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>Ly. IAS<br>20V<br>: ably tp 0.01<br>**----- End of picture text -----**<br> **Fig 12a.** Unclamped Inductive Test Circuit **==> picture [112 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br>tp<br>**----- End of picture text -----**<br> **==> picture [224 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br> I D<br>TOP 4.2A<br>120 7.2A<br>BOTTOM 10A<br>100 NE<br>VER<br>80 SNe<br>60<br>NA<br>40<br>RNAS<br>20<br>aNNee<br> V = 25VDD<br>0 pty PSSA<br>25 50 75 100 125 150 175<br>Starting T , Junction Temperature (°C)J<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> IAS<br>**----- End of picture text -----**<br> **Fig 12c.** Maximum Avalanche Energy vs. Drain Current **Fig 12b.** Unclamped Inductive Waveforms **==> picture [244 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds<br>Vgs<br>Vgs(th)<br>: |<br>A _\<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 13a.** Gate Charge Test Circuit **Fig 13b.** Gate Charge Waveform 6 2017-10-13 ~~re~~ ~~Cinfineon~~ AUIRFZ24NS/L ~~[~~ **Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 2017-10-13 7 AUIRFZ24NS/L ~~LLL~~ ## ~~Cinfin eon~~ **D[2] - Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) ## **D[2] - Pak (TO-263AB) Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFZ24NS<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> 8 2017-10-13 AUIRFZ24NS/L ~~LLL~~ ## ~~Cinfineon~~ **TO-262 Package Outline** (Dimensions are shown in millimeters (inches) ## **TO-262 Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFZ24NL<br>Date Code<br>IR Logo T é4R YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br> 9 2017-10-13 ~~Cinfineon~~ AUIRFZ24NS/L ~~LLL~~ ## **D[2] - Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) **==> picture [386 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br> **==> picture [71 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> FEED DIRECTION<br>**----- End of picture text -----**<br> **==> picture [376 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 10 2017-10-13 ~~ie~~ AUIRFZ24NS/L ~~&»«=«=»™§F5F eed~~ ## **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||D2-Pak|MSL1| |||TO-262|| |**ESD**|Machine Model|Class M2 (+/- 150V)† <br>AEC-Q101-002|| ||Human Body Model|Class H1A (+/- 500V)† <br>AEC-Q101-001|| ||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| - Highest passing voltage. ## **Revision History** |**Date**|||**Comments**| |---|---|---|---| |10/27/2015||Updated datasheet with corporate template|| |||Corrected orderingtable onpage 1.|| |10/13/2017||Corrected typo error on part marking on page 8,9.|Corrected typo error on part marking on page 8,9.| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2017-10-13
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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