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AUIRFS8409-7TRL
Power MOSFET, N Channel, 40 V, 240 A, 750 µohm, TO-263 (D2PAK), Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:40V; On Resistance Rds(on):550µohm; Available until stocks are exhausted Alternative available
- MSL: -
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 7Pins
- Channel Type: N Channel
- Product Range: HEXFET
- Qualification: -
- Power Dissipation: 375W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 240A
- Drain Source On State Resistance: 750µohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 2.57 € |
| Current stock | 100+ |
| Lead time | 7 days |
Datasheet
## **Applications**
HEXFET ® Power MOSFET **VDSS 40V** ~~ee~~ **RDS(on) typ.** ~~|~~ **0.55m** Ω **max. 0.75m** Ω ~~fs Pr~~ **ID (Silicon Limited)** ~~—<—s—sSY~~ **522A** ~~es~~ **ID (Package Limited) 240A** ~~ee~~ D D G S 5° Qs S G D2Pak7 Pin **G D S** Gate Drain Source
|**Ordering Information**|**Ordering Information**|**Ordering Information**|**Ordering Information**|**Ordering Information**|
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Standard Pack**||**Complete Part Number**|
|||**Form**|**Quantity**||
|AUIRFS8409-7P|D2Pak 7 Pin|Tube|50|AUIRFS8409-7P|
|||Tape and Reel Left|800|AUIRFS8409-7TRL|
|||Tape andReel Right|800|AUIRFS8409-7TRR|
|board mounted and still air conditions. Ambient temperature (Ta) is 25°C, unless otherwise specified.||
|---|---|
|**Symbol**<br>**Parameter**<br>**Max.**|**Units**|
|ID@ TC= 25°C<br>Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>522<br>~~OO~~||
|ID@ TC= 100°C<br>Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current,VGS@ 10V(Package Limited)<br>369<br>240<br>~~a ©~~|A|
|IDM<br>Pulsed Drain Current<br>1200<br>~~Ge~~||
|PD@TC= 25°C<br>Maximum Power Dissipation<br>375|W|
|Linear DeratingFactor<br>2.5|W/°C|
|VGS<br>Gate-to-Source Voltage<br>± 20|V|
|TJ<br>Operating Junction and<br>-55 to + 175||
|TSTG<br>Storage Temperature Range|°C|
|Soldering Temperature, for 10 seconds (1.6mm from case)<br>300||
|**Avalanche Characteristics**||
|EAS(Thermallylimited) Single Pulse Avalanche Energy<br>EAS(tested)<br>Single Pulse Avalanche Energy Tested Value<br>IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy<br>**Thermal Resistance**<br>**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>RθJC<br>Junction-to-Case<br>–––<br>0.4<br>RθJA<br>Junction-to-Ambient (PCB Mount)<br>–––<br>40<br>764<br>See Fig. 14, 15, 24a, 24b<br>1485<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~eea~~<br>~~eG~~<br>~~©~~|A<br>mJ<br>**Units**<br>°C/W<br>mJ|
|HEXFET®is a registered trademark of International Rectifier.||
|*****Qualification standards can be found at http://www.irf.com/||
**Static @ TJ = 25°C (unless otherwise specified)**
|**Symbol**|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**|**Units**|**Conditions**|||
|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––|V|VGS= 0V,ID= 250μA|||
|ΔV(BR)DSS/ΔTJ<br>RDS(on)<br>VGS(th)|Breakdown Voltage Temp. Coefficient<br>–––<br>0.026<br>–––<br>Static Drain-to-Source On-Resistance<br>–––<br>0.55<br>0.75<br>Gate Threshold Voltage<br>2.2<br>3.0<br>3.9<br>~~a~~<br>~~GG~~<br>~~Po~~|V/°C<br>mΩ<br>V|Reference to 25°C,ID= 2mA<br>VGS= 10V,ID= 100A<br>VDS= VGS,ID= 250μA|||
|IDSS|Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>–––<br>–––<br>150|μA|VDS= 40V,VGS= 0V<br>VDS= 40V,VGS= 0V,TJ= 125°C|||
|IGSS|Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100|nA|VGS= 20V<br>VGS= -20V|||
|RG|Internal Gate Resistance<br>–––<br>2.2<br>–––<br>Ω<br>~~Pe~~|||||
|**Dynamic @ TJ = 25°C**|**= 25°C(unless otherwise specified)**|||||
|**Symbol**|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**|**Units**|**Conditions**|||
|gfs|Forward Transconductance<br>176<br>–––<br>–––|S|VDS= 10V,ID= 100A|||
|Qg<br>Qgs<br>Qgd<br>Qsync|Total Gate Charge<br>–––<br>305<br>460<br>Gate-to-Source Charge<br>–––<br>84<br>–––<br>Gate-to-Drain("Miller")Charge<br>–––<br>96<br>–––<br>Total Gate Charge Sync.(Qg- Qgd)<br>–––<br>209<br>–––<br>nC<br>ID= 100A<br>VGS= 10V<br>VDS=20V<br>ID= 100A,VDS=0V,VGS= 10V<br>~~ee~~<br>~~a~~|||||
|td(on)|Turn-On DelayTime<br>–––<br>32<br>–––||VDD= 20V|||
|tr|Rise Time<br>–––<br>148<br>–––||ID= 100A|||
|td(off)|Turn-Off DelayTime<br>–––<br>149<br>–––|ns|RG= 2.7Ω|||
|tf<br>Ciss|Fall Time<br>–––<br>107<br>–––<br>Input Capacitance<br>–––<br>13975<br>–––<br>~~Pt~~||VGS= 0V<br>VGS= 10V<br>~~@~~|||
|Coss|Output Capacitance<br>–––<br>2140<br>–––||VDS= 25V|||
|Crss<br>Reverse Transfer Capacitance<br>–––<br>1438<br>–––<br>Cosseff.(ER)<br>Effective Output Capacitance(EnergyRelated)<br>–––<br>2620<br>–––<br>Cosseff.(TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>3306<br>–––<br>**Diode Characteristics**<br>~~a~~<br>~~ee~~<br>~~I~~||pF|ƒ= 1.0 MHz,See Fig. 5<br>VGS= 0V,VDS=0V to 32V<br>See Fig. 11<br>VGS= 0V,VDS= 0V to 32V<br>~~©~~<br>~~0~~|||
|**Symbol**<br>IS<br>ISM<br>VSD|S<br>D<br>G<br>**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>Continuous Source Current<br>(Body Diode)<br>Pulsed Source Current<br>(Body Diode)<br>Diode Forward Voltage<br>–––<br>0.8<br>1.2<br>V<br>A<br>–––<br>–––<br>–––<br>–––<br>522<br>1200<br>TJ= 25°C,IS= 100A,VGS= 0V<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol<br>showing the<br>**Conditions**<br>~~ee~~<br>~~oe~~<br>~~|i] ie~~<br>~~@OO~~|||||
|dv/dt|Peak DiodeRecovery<br>–––<br>1.6<br>–––<br>~~GO ~~|V/ns<br>TJ= 175°C,IS= 100A,VDS= 40V<br> ~~GO~~||||
|trr<br>Qrr|Reverse Recovery Time<br>–––<br>50<br>–––<br>–––<br>58<br>–––<br>Reverse Recovery Charge<br>–––<br>59<br>–––<br>–––<br>72<br>–––<br>ns<br>nC<br>~~FEE~~||TJ= 25°C<br>VR= 34V,<br>TJ= 125°C<br>IF= 100A<br>TJ= 25°C<br>di/dt = 100A/μs<br>TJ= 125°C|||
|IRRM|Reverse RecoveryCurrent<br>–––<br>2.2<br>–––<br>A<br>~~pf~~||TJ= 25°C|||
|Notes:||||||
|®Calculatedcontinuous|≤<br>continuouscurrentbasedonmaximumallowable<br>©Pulsewidth<br>400us;|400us;duty|≤<br>cycle<br>2%.|||
Ω , above θ
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1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>100 7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>10<br>4.5V<br>1<br>≤ 60μs PULSE WIDTH<br>Tj = 25°C<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>1000<br>T = 175°C<br>J<br>100<br>10 TJ = 25°C<br>1<br>VDS = 10V<br>≤ 60μs PULSE WIDTH<br>0.1<br>2 3 4 5 6 7 8<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
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1000000<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED<br>C = C<br>rss gd<br>C = C + C<br>100000 oss ds gd<br>C<br>iss<br>10000<br>C<br>oss<br>C<br>rss<br>1000<br>100<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage
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1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>100<br>4.5V<br>≤ 60μs PULSE WIDTH<br>Tj = 175°C<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2. Typical Output Characteristics<br>2.0<br>ID = 100A<br>VGS = 10V<br>1.6<br>1.2<br>0.8<br>0.4<br>-60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br>
**Fig 4.** Normalized On-Resistance vs. Temperature
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14.0<br>ID = 100A<br>12.0<br>VDS= 32V<br>10.0 V DS = 20V<br>8.0<br>6.0<br>4.0<br>2.0<br>0.0<br>0 50 100 150 200 250 300 350 400<br> QG, Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage
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1000<br>T = 175°C<br>J<br>100<br>TJ = 25°C<br>10<br>1<br>VGS = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7. Typical Source-Drain Diode<br>Forward Voltage<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>
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600<br>Limited By Package<br>500<br>400<br>300<br>200<br>100<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>Fig 9. Maximum Drain Current vs.<br>Case Temperature<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-5 0 5 10 15 20 25 30 35 40 45<br>VDS, Drain-to-Source Voltage (V)<br>Energy (μJ)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br>
**Fig 11.** Typical COSS Stored Energy
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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100μsec<br>100<br>1msec<br>Limited by Package<br>10 DC<br>10msec<br>1 Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 8.** Maximum Safe Operating Area
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48<br>Id = 2.0mA<br>47<br>46<br>45<br>44<br>43<br>42<br>41<br>40<br>-60 -20 20 60 100 140 180<br>TJ , Temperature ( °C )<br>Fig 10. Drain-to-Source Breakdown Voltage<br>3500<br>ID<br>3000 TOP 26A<br> 52A<br>2500 BOTTOM 100A<br>2000<br>1500<br>1000<br>500<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 10.** Drain-to-Source Breakdown Voltage
**Fig 12.** Maximum Avalanche Energy vs. DrainCurrent
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1<br>D = 0.50<br>0.1 0.20<br>0.10<br>0.05<br>0.01 0.02<br>0.01<br>SINGLE PULSE<br>0.001 ( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Δ Tj = 150°C and<br>0.01 Tstart =25°C (Single Pulse)<br>100<br>0.05<br>0.10<br>10<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming ΔΤ j = 25°C and<br>Tstart = 150°C.<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14. Typical Avalanche Current vs.Pulsewidth<br>800 Notes on Repetitive Avalanche Curves , Figures 14, 15<br>TOP Single Pulse (For further info, see AN-1005 at www.irf.com)<br>700 BOTTOM 1.0% Duty Cycle 1. Avalanche failures assumption:<br>ID = 100A<br>600 excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.<br>500 4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.<br>400 during avalanche).<br>6. Iav = Allowable avalanche current.<br>300 7. Δ T = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed as<br>25°C in Figure 14, 15).<br>200 tav = Average time in avalanche.<br>D = Duty cycle in avalanche = tav ·f<br>100 ZthJC(D, tav) = Transient thermal resistance, see Figures 13)thJC(D, tav) = Transient thermal resistance, see Figures 13)(D, tav) = Transient thermal resistance, see Figures 13)av) = Transient thermal resistance, see Figures 13)) = Transient thermal resistance, see Figures 13)<br>0 PD (ave) = 1/2 ( 1.3·BV·Iav) = � T/ ZthJC<br>25 50 75 100 125 150 175 Iav = 2 � T/ [1.3·BV·Zth]<br>Starting TJ , Junction Temperature (°C) EAS (AR) = PD (ave)·tav<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
7. Δ T = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15).
- ZthJC(D, tav) = Transient thermal resistance, see Figures 13)thJC(D, tav) = Transient thermal resistance, see Figures 13)(D, tav) = Transient thermal resistance, see Figures 13)av) = Transient thermal resistance, see Figures 13)) = Transient thermal resistance, see Figures 13)
**Fig 15.** Maximum Avalanche Energy vs. Temperature
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4.0<br>ID = 100A<br>3.0<br>|<br>2.0<br>T = 125°C<br>1.0 | J<br>TJ = 25°C<br>| =<br>0.0<br>MERE EER<br>4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage (V)<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>
**Fig 16.** On-Resistance vs. Gate Voltage
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16<br>IF = 60A<br>14<br>VR = 34V<br>12 T J = 25°C fd<br>TJ = 125°C<br>| a<br>10<br>Z|<br>ae<br>8<br>6<br>74<br>4<br>2 7<br>| |<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>Fig. 18 - Typical Recovery Current vs.<br>14<br>IF = 100A<br>12 V R = 34V<br>TJ = 25°C<br>T = 125°C<br>10 J<br>8 | -CoBe e<br>WgZ<br>|<br>6<br>le‘7<br>4 lA | |<br>2 7<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>IRRM (A)<br>IRRM (A)<br>**----- End of picture text -----**<br>
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4.5<br>4.0<br>3.5<br>RASA<br>3.0<br>pt TPA<br>TERE<br>2.5<br>ID = 250μA “aa.<br>ID = 1.0mA<br>2.0<br>ID = 1.0A /iNNUE<br>1.5<br>1.0 LEELA<br>CCE<br>-75 -25 25 75 125 175 225<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>
**Fig 17.** Threshold Voltage vs. Temperature
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700<br>IF = 60A<br>600 V R = 34V<br>TJ = 25°C | | |<br>500<br>TJ = 125°C<br>| | [fe<br>400 P| ey<br>os /<br>eye<br>300<br>200<br>| fed |<br>Per<br>100 |<br>ef<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>Fig. 19 - Typical Stored Charge vs. di*/dt<br>450<br>IF = 100A<br>400<br>VR = 34V<br>T = 25°C<br>350 J<br>TJ = 125°C<br>300<br>Te17<br>250 VA<br>200 L<br>pfA<br>150<br>ae v a<br>100<br>peor<br>50 | | |<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>QRR (nC)<br>QRR (nC)<br>**----- End of picture text -----**<br>
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10.0<br>VGS = 5.5V<br>VGS = 6.0V<br>Hk VGS = 7.0V<br>8.0<br>VGS = 8.0V<br>VGS = 10V<br>ti<br>6.0<br>fy \<br>Ay /mv<br>4.0<br>paiva<br>2.0<br>4 hi 1, Z|<br>pe |<br>a<br>0.0<br>0 100 200 300 400 500<br>ID, Drain Current (A)<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>
**Fig 22.** Typical On-Resistance vs. Drain Current
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Driver Gate Drive<br>P.W.<br>D.U.T + { $ P.W. $ Period — — D = —— Period<br>) [©)] Circuit • Low LayoutStray ConsiderationsInduct ] V | t GS=10<br> •<br>- • CurrentLow LeakageTransformerInductance 2) D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 we VDD<br>• Re-Applied<br>Re • Driver same type as D.U.T. + Voltage Body Diode Forward Drop iv<br>(A • vidt controlled by Rg Vp p -<br>•<br>D.U.T. - Device Under Test e s<br>Ripple ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @)<br>* Vos = 5V for Logic Level Devices<br>Fig 23. eak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® ower MOSFETs<br>V(BR)DSS(BR)DSS<br>15V ~— tp -><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>x 2V0VGS Jt<br>tp 0.01 WAY Ω IASAS —<br>**----- End of picture text -----**<br>
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V(BR)DSS(BR)DSS<br>~— tp -><br>IASAS<br>**----- End of picture text -----**<br>
**Fig 24b.** Unclamped Inductive Waveforms
**Fig 24a.** Unclamped Inductive Test Circuit
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+<br>-<br> 1<br> 0.1 %<br>**----- End of picture text -----**<br>
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Fig 25a. Switching Time Test Circuit<br>**----- End of picture text -----**<br>
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Current Regulator<br>Same Type as D.U.T.<br>| ! 12V .2 μ F 50K Ω |<br>! i .3 μ F | J +<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>
**Fig 26a.** Gate Charge Test Circuit
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VDS<br>90%<br>I<br>10%<br>[\_<br>VGS l v l > | p l<br>td(on) tr td(off) tf<br>Fig 25b. Switching Time Waveforms<br>**----- End of picture text -----**<br>
**==> picture [162 x 131] intentionally omitted <==**
**----- Start of picture text -----**<br>
Id<br>Vds<br>fl Vgs<br>i<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>
**==> picture [150 x 10] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig 26b. Gate Charge Waveform<br>**----- End of picture text -----**<br>
D[2] Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches)
## D[2] Pak - 7 Pin Part Marking Information
## D[2] Pak - 7 Pin Tape and Reel
## **Qualification Information[†]**
## **Qualification Level**
Automotive †† - (per AEC Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level.
||||D<br>2PAK - 7 Pin|||||MSL1|
|---|---|---|---|---|---|---|---|---|
|||Machine Model||Class M4 (+/- 600)||††|||
||||||AEC-Q101-002||||
|**ESD**||Human Body Model||Class H3A (+/- 6000)<br>AEC-Q101-001||||††|
|||Charged Device Model||Class C5 (+/- 2000)|||††||
||||||AEC-Q101-005||||
|**RoHS Compliant**|||||Yes||||
y[IN] ~~[é4R~~
~~| AUIRFS8409-7P~~
|
## IMPORTANT NOTICE
Unless specifically designated forthe automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the righttomake corrections, modifications, enhancements, improvements, and other changesto its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and/or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IRis not responsible or liable for such altered documentation. Information ofthird parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR forthat product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, orin other applications intended to support or sustain life, orin any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http:/Awww. irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Bivd., El Segundo, California 90245
Tel: (310) 252-7105
| 12 | www.irf.com
© 2013 International Rectifier
April 30, 2013
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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