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AUIRFS4310ZTRL
Power MOSFET, N Channel, 100 V, 120 A, 4800 µohm, TO-263AB, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (08-Jul-2021)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: HEXFET
- Qualification: AEC-Q101
- Power Dissipation: 250W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263AB
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 120A
- Drain Source On State Resistance: 4800µohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 3.54 € |
| Current stock | 200+ |
| Lead time | 7 days |
Datasheet
AUIRFS4310Z ~~—~~ HEXFET[® ] Power MOSFET ## ~~Cinfin eon~~ ## **AUTOMOTIVE GRADE** ## **Features** **VDSS 100V** Advanced Process Technology Ultra Low On-Resistance **RDS(on) typ. 4.8m** Dynamic dv/dt Rating **max. 6.0m** 175°C Operating Temperature **ID (Silicon Limited) 127A** Fast Switching Repetitive Avalanche Allowed up to Tjmax ~~==~~ **ID (Package Limited) 120A** Lead-Free, RoHS Compliant D Automotive Qualified * **Description** Specifically designed for Automotive applications, this HEXFET® S Power MOSFET utilizes the latest processing techniques to achieve G extremely low on-resistance per silicon area. Additional features of D[2] -Pak this design are 175°C junction operating temperature, fast switching AUIRFS4310Z speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable **G D S** device for use in Automotive applications and a wide variety of other applications. ~~-|~~ Gate Drain Source |**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>AUIRFS4310Z<br>D2-Pak<br>Tube<br>50<br>AUIRFS4310Z<br>Tape andReel Left<br>800<br>AUIRFS4310ZTRL<br>~~SE~~| |---| |**Absolute Maximum Ratings**| |Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress| |ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not| |implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance| |and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless| |**Symbol**<br>**Parameter**||**Max.**||**Units**|| |---|---|---|---|---|---| |ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V (Silicon Limited)||127|||| |ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V (Wire Bond Limited)||90<br>120||A|| |IDM<br>Pulsed Drain Current||560|||| |PD@TC= 25°C<br>Maximum Power Dissipation||250||W|| |Linear DeratingFactor||1.7||W/°C|| |VGS<br>Gate-to-SourceVoltage<br>± 20<br>V<br>EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) <br>130<br>mJ<br>IAR<br>Avalanche Current<br>See Fig.14,15, 22a, 22b<br>A<br>EAR<br>Repetitive Avalanche Energy <br>mJ<br>dv/dt<br>Peak Diode Recovery <br>18<br>V/ns<br>~~————~~|||||| |TJ<br>Operating Junction and<br>-55 to + 175<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>300<br>~~ae~~|||||| |**Thermal Resistance**|||||| |**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>0.6<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount),D2Pak<br>–––<br>40<br>~~po~~|||||| |HEXFET® is a registered trademark of Infineon.|||||| |1<br>2017-10-12<br>*****Qualification standards can be found atwww.infineon.com<br>~~—_—~~|||||| ~~Cinfineon~~ AUIRFS4310Z ~~__L_LL~~ |AUIRFS4310Z<br>~~Cinfineon~~<br>~~__L_LL~~|~~__L_LL~~| |---|---| |**Static @ TJ = 25°C (unless otherwise specified)**|| |**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>0.11<br>–––<br>V/°C Reference to 25°C, ID= 5mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>4.8<br>6.0<br>mVGS= 10V, ID= 75A<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VDS= VGS, ID= 150µA<br>gfs<br>Forward Trans conductance<br>150<br>–––<br>–––<br>S<br>VDS= 50V,ID= 75A<br>RG<br>Gate Resistance<br>–––<br>0.7<br>–––<br><br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µAVDS= 100V,VGS= 0V<br>–––<br>–––<br>250<br>VDS= 80V,VGS= 0V,TJ=125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>~~es~~<br>~~I I~~<br>~~I~~<br>~~esnD~~<br>~~I~~<br>~~GO~~<br>~~esss~~<br>~~es~~<br>~~nD Es~~<br>~~es~~<br>~~nD I~~<br>~~ee~~<br>~~nD IIIS I~~<br>~~ee~~<br>~~nS IIIS I~~<br>~~eeee~~<br>~~ee ere~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~———~~<br>~~EEE~~<br>~~es ee ee~~<br>~~PO~~|| |**Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**|| |Qg<br>Total Gate Charge<br>–––<br>120<br>170<br>nC<br>ID= 75A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>29<br>–––<br>VDS= 50V<br>Qgd<br>Gate-to-Drain Charge<br>–––<br>35<br>–––<br>VGS= 10V<br>Qsync<br>Total Gate Charge Sync.(Qg - Qgd)<br>–––<br>85<br>–––<br>td(on)<br>Turn-On Delay Time<br>–––<br>20<br>–––<br>ns<br>VDD= 65V<br>tr<br>RiseTime<br>–––<br>60<br>–––<br>ID= 75A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>55<br>–––<br>RG= 2.7<br>tf<br>Fall Time<br>–––<br>57<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>6860<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>490<br>–––<br>VDS= 50V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>220<br>–––<br>ƒ= 1.0MHz, See Fig. 5<br>Coss eff.(ER)<br>Effective Output Capacitance (Energy Related)<br>–––<br>570<br>–––<br>VGS= 0V, VDS= 0V to 80V<br>Coss eff.(TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>920<br>–––<br>VGS= 0V,VDS= 0V to 80V<br>~~aee~~<br>~~ss~~<br>~~a a~~<br>~~ee~~<br>~~eeee~~<br>~~es ee~~<br>~~ee~~<br>~~eses~~<br>~~a ee~~<br>~~ee~~<br>~~eea~~<br>~~es~~~~**e**e~~<br>~~es~~<br>~~n~~<br>~~Os~~<br>~~es~~<br>~~esnS~~<br>~~Ge~~<br>~~a rs~~<br>~~rs~~<br>~~cere~~|| |**Diode Characteristics**|| |**Parameter **<br>**Min.**<br>**Typ. Max.Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>––– 127<br>A<br>MOSFET symbol<br>(Body Diode)<br>showing the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>560<br>integral reverse<br>(BodyDiode)<br>p-njunctiondiode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C,IS= 75A,VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>40<br>–––<br>nsTJ =25°CVDD= 85V<br>–––<br>49<br>–––<br>TJ =125°CIF= 75A,<br>Qrr<br>Reverse Recovery Charge<br>–––<br>58<br>–––<br>nCTJ =25°Cdi/dt = 100A/µs<br>–––<br>89<br>–––<br>TJ =125°C <br>IRRM<br>ReverseRecovery Current<br>–––<br>2.5<br>–––<br>A<br>TJ= 25°C<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~eses~~<br>~~ts Us Od~~<br>~~>~~<br>~~et He~~<br>~~esGG~~<br>~~a ee~~<br>~~eee~~<br>~~|tT~~<br>~~a es~~<br>~~eee~~<br>~~|ET~~<br>~~eses~~<br>~~r~~~~**s** ss~~<br>~~eee~~|| |**Notes:**|| - Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. - Repetitive rating; pulse width limited by max. junction temperature. - Limited by TJmax, starting TJ = 25°C, L = 0.047mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 600A/µs, VDD V(BR)DSS, TJ 175°C. - Pulse width 400µs; duty cycle 2%. - Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. - Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. - When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 - R is measured at TJ approximately 90°C. 2 2017-10-12 ## ~~Cinfineon~~ **==> picture [210 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>6.0V<br>5.5V<br>5.0V<br>100 4.8V<br>BOTTOM 4.5V<br>reall BEY<br>10<br>Zs ant<br>4.5V<br> 60µs PULSE WIDTH<br>Tj = 25°C<br>Te<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 1 Typical Output Characteristics<br>1000<br>100 AT<br>T = 175°C<br>J<br>10<br>fe/eee<br>T = 25°C<br>J<br>1<br>pe VDS = 50V<br> 60µs PULSE WIDTH<br>fp<br>0.1<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br> **Fig. 3** Typical Transfer Characteristics **==> picture [215 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 12000<br>VGS = 0V, f = 1 MHZ<br>Ciss = Cgs + Cgd, Cds SHORTED<br>10000 Crss = Cgd<br>pe Coss = Cds + Cgd<br>8000<br>Eee Ciss<br>6000 = ST<br>4000<br>Coss<br>2000<br>Crss<br>0 Sent<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [230 x 246] intentionally omitted <==** **----- Start of picture text -----**<br> AUIRFS4310Z<br>_<br>1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>6.0V<br>5.5V<br>5.0V<br>4.8V<br>BOTTOM 4.5V<br>| 100 Atco<br>4.5V<br>) aes<br> 60µs PULSE WIDTH<br>Tj = 175°C<br>10 [i<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig. 2** Typical Output Characteristics **==> picture [217 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>ID = 75A<br>VGS = 10V<br>2.0<br>ALY<br>1.5<br>a<br>1.0<br>MAE<br>0.5 TLL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig. 4 Normalized On-Resistance vs. Temperature<br>20<br>ID= 75A<br>VDS= 80V<br>16 VDS= 50V<br>VDS= 20V sf<br>12 Hp)<br>Gf<br>8<br>4<br>0 Ana‘ell<br>0 40 80 120 160 200<br> QG Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br> **Fig. 4** Normalized On-Resistance vs. Temperature **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 3 2017-10-12 ~~re~~ AUIRFS4310Z ~~Ld~~ ## ~~Cinfineon~~ **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TJ = 175°C Tt<br>100<br>10 T J = 25°C<br>1<br>VGS = 0V<br>Pe<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br> **Fig. 7** Typical Source-to-Drain Diode Forward Voltage **==> picture [210 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>LIMITED BY PACKAGE<br>120<br>Pe<br>100 PSN<br>80<br>FAN<br>60<br>40<br>HN<br>20<br>0 CECE<br>25 50 75 100 125 150 175<br> TC, Case Temperature (°C)<br>Maximum Drain Current vs. Case Temperature<br>3.0<br>2.5<br>2.0 P| | | jy<br>Pt | | lA<br>1.5 | | tA<br>1.0 | |x]<br>0.5<br>4m<br>0.0 eT | | |<br>0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br> **Fig 9.** Maximum Drain Current vs. Case Temperature **==> picture [206 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000 Sttit<br>100 1m sec 100µsec<br>1 0m sec<br>10<br>1 Tc = 25°C<br>Tj = 175°C<br>Single Pulse DC<br>0.1<br>0.1 1 10 100<br>VDS, Drain-toSource Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 8.** Maximum Safe Operating Area **==> picture [212 x 434] intentionally omitted <==** **----- Start of picture text -----**<br> 130<br>ID = 5mA<br>120 ELE<br>L<br>110<br>[PIPER<br>100<br>etALLELE<br>90 LEE ELL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 10. Drain-to-Source Breakdown Voltage<br>600<br> ID<br>TOP 11A<br>500<br> 19A<br>BOTTOM 75A<br>400 So<br>Nae<br>300 NE<br>200 NEN tteefe<br>100<br>aNees<br>SSA<br>0 ||<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>**----- End of picture text -----**<br> **Fig 10.** Drain-to-Source Breakdown Voltage **Fig 12.** Maximum Avalanche Energy vs. Drain Current **Fig 11.** Typical COSS Stored Energy 4 2017-10-12 ~~=.~~ ~~Cinfineon~~ AUIRFS4310Z ~~__L_LL~~ **==> picture [445 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D = 0.50<br>0.20 °<br>0.1 Ri ( C/W) I (sec)<br>0.100.05 cere J J R1R1 R2R2 R3R3 | || R 4R 4 C C 0.018756 0.000007<br>0.02 1 1 2 2 3 3 4 4 0.159425 0.000117<br>0.320725 0.001817<br>0.01 0.01 Ci Ci = = i Ri iRi<br>0.101282 0.011735<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>Te vill LE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse pulsewidth, tav, assuming Tj = 150°C and<br>[ie Sl|| Pe<br>Tstart =25°C (Single Pulse)<br>0.01<br>10 Titnet 0.05 rr|<br>A IN<br>0.10<br>1 Allowed avalanche Current vs avalanche<br>fitings AAR<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>0.1 ‘comme<br>TCT | AEM<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br> **Fig 14.** Avalanche Current vs. Pulse width **==> picture [523 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 140 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP Single Pulse (For further info, see AN-1005 at www.infineon.com)<br>120 BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:<br>ID = 75A Purely a thermal phenomenon and failure occurs at a temperature far in<br>—_<br>100 KC eee excess of Tjmax. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. jmax is not exceeded. is not exceeded.<br>80 AN EEE EEL 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.<br>60 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>EXNGHEEEEEER during avalanche).<br>6. Iav = Allowable avalanche current.<br>40 SERNNGeeeeee<br>7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>25°C in Figure 13, 14).<br>20<br>Coo NSE EE tav = Average time in avalanche.<br>D = Duty cycle in avalanche = tav ·f<br>0 PELE) Pee KL<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) = T/ ZthJCthJC<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. jmax is not exceeded. is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 7. T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 13, 14). **PD (ave) = 1/2 ( 1.3·BV·Iav) = D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) = av) = ) =** **T/ ZthJCthJC Iav = 2** **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** **Fig 15.** Maximum Avalanche Energy vs. Temperature 2017-10-12 5 AUIRFS4310Z ~~Ld~~ ## ~~Cinfineon~~ **==> picture [497 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> 4.5 24<br>ID = 1.0AD = 1.0A= 1.0A<br>4.0 A I D = 1.0mA 20 z<br>ID = 250µAD = 250µA = 250µA<br>3.5 ID = 150µA 16<br>3.0 Paun e atscc a SOUUERCGD<br>RRQ 12 EET<br>2.52.0<br>8<br>2.0 SESSRERNNG eae IF = 30A<br>VR = 85V<br>4<br>1.5 TJ = 125°C<br>TJ = 25°C<br>1.0 CCCCCCCESSPCPsPCPs 0 ooannan<br>-75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000<br>TJ , Temperature ( °C ) dif / dt - (A / µs)<br>Fig 16. Threshold Voltage vs. Temperature Fig. 17 - Typical Recovery Current vs. diff/dt<br>24 600<br>20 tity ye 500 ERR<br>16 400<br>LL ber EERREEDZE<br>12 300<br>REDE e2an EEREBESZA<br>8 200<br>err IF = 45A Eapes7400 IF = 30A<br>VR = 85V VR = 85V<br>4 100<br>TJ = 125°C TJ = 125°C<br>TJ = 25°C TJ = 25°C<br>0 an CELL | 0 peecE |<br>Ey<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs) dif / dt - (A / µs)<br>IRRM - (A)<br>IRRM - (A) QRR - (nC)<br>**----- End of picture text -----**<br> **==> picture [284 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 4.5<br>ID = 1.0AD = 1.0A= 1.0A<br>4.0 A I D = 1.0mA<br>ID = 250µAD = 250µA = 250µA<br>3.5 ID = 150µA<br>3.0 Paun e atscc a<br>RRQ<br>2.52.0 SESSRERNNG<br>1.5<br>CCCCCCCESSPCPsPCPs<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br> **Fig. 17** - Typical Recovery Current vs. diff/dt **Fig 16.** Threshold Voltage vs. Temperature **Fig. 18** - Typical Recovery Current vs. dif/dt **Fig. 19** - Typical Stored Charge vs. dif/dt **==> picture [207 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>500 Fite<br>400 ERRRREeae<br>300<br>200 LtGane ep<br> aaa<br>IF = 45A<br>VR = 85V<br>100<br>set] TJ = 125°C<br>TJ = 25°C<br>cE<br>0<br>ET<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br> **Fig. 20** - Typical Stored Charge vs. dif/dt 6 2017-10-12 ~~°°... =~~ ~~Cinfir~~ AUIRFS4310Z ~~_~~ **Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs **==> picture [175 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>20V JL IAS<br>ae tp Y 0.01<br>**----- End of picture text -----**<br> **Fig 22a.** Unclamped Inductive Test Circuit **==> picture [112 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br> **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> IAS<br>**----- End of picture text -----**<br> **Fig 22b.** Unclamped Inductive Waveforms **Fig 23a.** Switching Time Test Circuit **Fig 23b.** Switching Time Waveforms **==> picture [188 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> Vds Hi Id<br>Vgs<br>I<br>|<br>Vgs(th) !! ['] t<br>i t<br>A :<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 24a.** Gate Charge Test Circuit **Fig 24b.** Gate Charge Waveform 2017-10-12 7 AUIRFS4310Z ~~__L_LL~~ ## ~~Cinfin eon~~ **D[2] -Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) ## **D[2] -Pak (TO-263AB) Part Marking Information** **==> picture [331 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> Part Number AUIRFS4310Z<br>Date Code<br>IR Logo T éaR YWWA Y= Year<br>WW= Work Week<br><br>XX XX<br>ae<br>Lot Code<br>**----- End of picture text -----**<br> 8 2017-10-12 AUIRFS4310Z ~~__L_LL~~ ## ~~Cinfineon~~ ## **D[2] -Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) **==> picture [386 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br> **==> picture [71 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> FEED DIRECTION<br>**----- End of picture text -----**<br> **==> picture [376 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> 13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173) MIN.<br> MAX.<br>30.40 (1.197)<br>NOTES : MAX.<br>1. COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3. DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br> 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 9 2017-10-12 AUIRFS4310Z ~~“e_»&»«=«=5=$FDEee°°»~~ **Qualification Information** |**Qualification Information**|**Qualification Information**||| |---|---|---|---| |**Qualification Level**||Automotive<br>(per AEC-Q101)|| |||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.|| |**Moisture Sensitivity Level**||D2-Pak|MSL1| |**ESD**|Machine Model|Class M4 (+/- 800V)† <br>AEC-Q101-002|| ||Human Body Model|Class H2 (+/- 4000V)† <br>AEC-Q101-001|| ||Charged Device Model|Class C5 (+/- 2000V)† <br>AEC-Q101-005|| |**RoHS Compliant**||Yes|| † Highest passing voltage. |**Revision History**|**Revision History**|||| |---|---|---|---|---| |**Date**||||**Comments**| |12/04/2015|||Updated datasheet with corporate template|| ||||Corrected orderingtable onpage 1.|| |10/12/2017|||Corrected typo error on part marking on page 8.|Corrected typo error on part marking on page 8.| **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2017-10-12
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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